Capacitance-Voltage Characterization of Pulsed Plasma Polymerized Allylamine Dielectrics

2002 ◽  
Vol 736 ◽  
Author(s):  
Yifan Xu ◽  
Paul Berger ◽  
Jai Cho ◽  
Richard B. Timmons
Keyword(s):  
Heat Treatment ◽  
Dielectric Constant ◽  
Film Deposition ◽  
Pulsed Plasma ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Heat Treated ◽  
Capacitance Voltage ◽  
Mobile Ions

ABSTRACTPolyallylamine films, deposited on Si wafers by radio frequency (RF) pulsed plasma polymerization (PPP), were employed as insulating layers of metal-insulator-semiconductor (MIS) capacitors. The insulating polymer films were deposited at substrate temperatures of 25°C and 100°C. Multiple frequency capacitance-voltage (C-V) measurements indicated that an in-situ heat treatment during film deposition increased the insulator dielectric constant. The dielectric constant, calculated from the C-V data, rose from 3.03 for samples with no heat treatment to 3.55 for samples with an in-situ heat treatment. For both sample sets, the I-V data demonstrate a low leakage current value (<20fA) up to 100V with an area of 0.0307 mm2, resulting in a current density of <0.65 pA/mm2. Hysteresis in the C-V curves with differing sweep directions was more pronounced for in-situ heat-treated samples indicative of positive mobile ions.

Effects of Postdeposition in situ Heat Treatment on the Properties of Low Dielectric Constant Plasma Polymer Films Deposited Using Decahydronaphthalene and Tetraethyl Orthosilicate as the Precursors

2002 ◽  
Vol 17 (6) ◽  
pp. 1371-1375 ◽  
Author(s):  
Jaeyoung Yang ◽  
Cheonman Shim ◽  
Donggeun Jung
Keyword(s):  
Heat Treatment ◽  
Dielectric Constant ◽  
Polymer Films ◽  
Chemical Vapor ◽  
Relative Dielectric Constant ◽  
Tetraethyl Orthosilicate ◽  
Plasma Polymer ◽  
Low Dielectric ◽  
Heat Treated

We investigated effects of postdeposition heat treatment (HT) on the properties of plasma polymer films deposited by plasma-enhanced chemical vapor deposition using a mixture of decahydronaphthalene and tetraethyl orthosilicate as the precursors, which were referred to as plasma-polymerized decahydronaphthalene:tetraethyl orthosilicate (PPDHN:TEOS) films. HTs at 350, 450, and 500 °C decreased the relative dielectric constant k of the PPDHN:TEOS films from 3.16, the k value of the as-deposited film, to 2.82, 2.72, and 3.02, respectively. The change of k value as a function of HT temperature was correlated with the change of Fourier transform infrared absorption peaks of O–H, C = O, and Si-related groups. As the HT temperature increased, the thermal stability of the PPDHN:TEOS film increased. PPDHN:TEOS films, as-deposited or heat treated, showed leakage current density in the order of 10−7 A/cm2 at 1 MV/cm.

scholarly journals Effect of catalyst HF concentration on the electrical characteristics of ultra low-k materials

2012 ◽  
Vol 6 (2) ◽  
pp. 97-101 ◽  
Author(s):  
Zhi-Wei He ◽  
Shi-Qiu Zhu ◽  
Sheng-Li Wang ◽  
Zheng Qi ◽  
Yu-Yuan Guan
Keyword(s):  
Dielectric Constant ◽  
Sol Gel ◽  
Breakdown Field ◽  
Moisture Resistance ◽  
Electrical Characteristics ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Sol Gel Process ◽  
Capacitance Voltage ◽  
Low K

The effects of catalyst HF concentration on the dielectric and electrical properties of SiOF films are discussed. From the current density-voltage and capacitance-voltage curves, we observed that the film catalyzed with the special concentration of HF (the ratio of HF/H2O = 1/5) shows good moisture resistance, low leakage current (10-11 A/cm2 at 1 MV/cm) and high breakdown field (6 MV/cm), which can be explained by the results of Fourier transform infrared spectra. The dielectric constant value is also very low and reaches about 1.75 after annealing at the temperature of 450?C. Therefore, the concentration of HF catalyst is an important factor in the sol-gel process.

A Study of Pt/AlN/6H-SiC MIS Structures for Device Applications

2000 ◽  
Vol 622 ◽  
Author(s):  
Margarita P. Thompson ◽  
Gregory W. Auner ◽  
Changhe Huang ◽  
James N. Hilfiker
Keyword(s):  
Plasma Source ◽  
Film Structure ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Current Voltage ◽  
Aln Film ◽  
Capacitance Voltage ◽  
Device Applications ◽  
Current Densities ◽  
Mis Structures

ABSTRACTAlN films with thicknesses from 53 to 79 nm were deposited on 6H-SiC substrates via Plasma Source Molecular Beam Epitaxy (PSMBE). The influence of deposition temperature on the growth mode and film roughness was assessed. The optical constants of the films in the range 0.73-8.75 eV were determined using spectroscopic ellipsometry. Pt/AlN/6H-SiC MIS structures were created and current-voltage (I-V) and capacitance-voltage (C-V) measurements were performed at room temperature and at 250°C. Most of the MIS structures showed rectifying I-V characteristics regardless of growth temperature. A 120-nm-thick AlN film was deposited at 500°C. MIS structures created on this film showed a very low leakage current densities of 6×10−8 A/cm2. The dielectric constant of the film was estimated at approximately 9. The relation between film structure and electrical properties of the films is discussed.

scholarly journals Гетеробарьерные варакторы с неоднородно легированными модулирующими слоями

2019 ◽  
Vol 45 (20) ◽  
pp. 51
Author(s):  
Н.А. Малеев ◽  
М.А. Бобров ◽  
А.Г. Кузьменков ◽  
А.П. Васильев ◽  
М.М. Кулагина ◽  
...  
Keyword(s):  
Numerical Model ◽  
Leakage Current ◽  
Molecular Beam ◽  
Voltage Characteristic ◽  
Doping Profile ◽  
Published Data ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Inp Substrate ◽  
Capacitance Voltage

Optimal capacitance-voltage characteristic is critical for heterobarrier varactor diode (HBV) performance in terms of multiplication efficiency in mm- and sub-mm wave ranges. Numerical model of capacitance-voltage characteristics and leakage current for HBV with arbitrary heterostructure composition and doping profile was verified on published data and original experimental results. Designed HBV heterostructure with three undoped InAlAs/AlAs/InAlAs barriers surrounded with non-uniformly doped n-InGaAs modulation layers was grown by molecular-beam epitaxy on InP substrate and test HBV diodes have been fabricated. Test HBV diodes demonstrate capacitance-voltage characteristics with cosine shape at bias voltage up to two volts, increased capacitance ratio and low leakage current values.

Effect of heat treatment and heat treatment in combination with lignosulfonate on in situ rumen degradability of canola cake crude protein, lysine, and methionine

2020 ◽  
Vol 100 (1) ◽  
pp. 165-174 ◽  
Author(s):  
Piotr Micek ◽  
Katarzyna Słota ◽  
Paweł Górka
Keyword(s):  
Heat Treatment ◽  
High Temperature ◽  
Crude Protein ◽  
Dry Matter ◽  
Increased Temperature ◽  
Heat Treated ◽  
Cold Pressed ◽  
Temperature Heating ◽  
High Temperature Heating

The aim of this study was to determine the effect of heat treatment alone or in combination with the addition of lignosulfonate (LSO3) on canola cake protein, lysine, and methionine degradation in the rumen. Cold-pressed canola cake was left untreated, heated at 90, 110, 130, or 150 °C, or processed with 5% of LSO3 (in dry matter) and then heated. Effective rumen degradability of crude protein (CP), lysine, and methionine was less for treated than untreated canola cake (P < 0.05) and decreased with increased temperature of heating, but particularly when canola cake was heated at 150 °C (quadratic, P < 0.01). In general, effective rumen degradability of CP, lysine, and methionine was less for canola cake heated at 130 °C in combination with LSO3 compared with canola cake heat treated only (quadratic × LSO3 interaction, P ≤ 0.07). Results of this study indicate that high temperature heating (130 °C or greater for 60 min) may be necessary to protect canola cake protein from degradation in the rumen, and the combination of heat treatment and LSO3 may be more effective in protecting canola cake protein, lysine, and methionine from degradation in the rumen than the use of heat treatment only.

Effect of adding lignosulfonate and heat to canola screenings on ruminal and intestinal disappearance of dry matter and crude protein

2000 ◽  
Vol 80 (1) ◽  
pp. 215-219 ◽  
Author(s):  
Marina A. G. von Keyserlingk ◽  
E. Weurding ◽  
Mary Lou Swift ◽  
C. F. Wright ◽  
J. A. Shelford ◽  
...  
Keyword(s):  
Heat Treatment ◽  
Gastrointestinal Tract ◽  
Key Words ◽  
Crude Protein ◽  
Dry Matter ◽  
Holstein Cows ◽  
Lower Gastrointestinal Tract ◽  
Rumen Degradation ◽  
Heat Treated

The effect of adding 5% calcium lignosulfonate (LSO3) and heat to canola screenings on in situ ruminal and intestinal dry matter (DM) and crude protein (CP) disappearance in Holstein cows was investigated. Treatments consisted of untreated canola screenings, canola screenings that had been heated to 100 °C for 30 or 60 min and canola screenings that had 5% (wt wt−1) LSO3 added and were subsequently heated at 100 °C for 0, 30 or 60 min. Results indicate that treatment of canola screenings with 5% LSO3 and heated to 100 °C for 60 min was effective in reducing rumen degradation of DM and CP with a corresponding increase in disappearance in the lower gastrointestinal tract when compared to untreated and heat-treated canola screenings. Key words: Canola screenings, rumen by-pass protein, heat treatment, lignosulfonate

Polystyrene-block-poly(methylmethacrylate) composite material film as a gate dielectric for plastic thin-film transistor applications

RSC Advances ◽  
2014 ◽  
Vol 4 (36) ◽  
pp. 18493-18502 ◽  
Author(s):  
Jagan Singh Meena ◽  
Min-Ching Chu ◽  
Ranjodh Singh ◽  
Chung-Shu Wu ◽  
Umesh Chand ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Gate Dielectric ◽  
High Surface ◽  
Thin Film Transistor ◽  
Plastic Substrate ◽  
Low Leakage ◽  
Low Leakage Current ◽  
High Surface Energy ◽  
Low Temperature Process

Low-temperature process PS-b-PMMA composite film as gate dielectric deposited over plastic substrate, which exhibits high surface energy, high air stability, very low leakage current and better dielectric constant compared to their conventional polymer dielectrics for use in ZnO–TFT applications.

Instabilities in the Mechanical Stress in Deposited SiO2 Films Caused by Thermal Treatments

1990 ◽  
Vol 181 ◽  
Author(s):  
Bharat Bhushan ◽  
S.P. Murarka
Keyword(s):  
Heat Treatment ◽  
Mechanical Stress ◽  
Stress Measurement ◽  
In Situ Stress ◽  
Thermal Treatments ◽  
Heat Treated ◽  
Large Hysteresis ◽  
In Situ Stress Measurement ◽  
Deposited Films

ABSTRACTUsing an in-situ stress measurement technique that measures stress as a function of annealing temperature, instabilities in mechanical stress induced by heat treatment in a variety of doped/undoped SiO2 films deposited by APCVD, LPCVD and PECVD techniques have been investigated. A large hysteresis in mechanical stress, caused by first heat treatment to which the as-deposited films are subjected, has been observed in films deposited by APCVD/LPCVD techniques. No such hysteresis is obsesrved in films deposited by PECVD technique. Hysteresis in APCVD/LPCVD films is found to vanish once the films are heat treated at or above 800°C. The results are discussed in terms of oxide densification, the presence of hydrogenous species, and phosphorous.

Low Temperature Deposition of High Dielectric Constant Thin Films for Decoupling Capacitor Applications

1990 ◽  
Vol 203 ◽  
Author(s):  
P. Li ◽  
B. Gittleman ◽  
T.-M. Lu
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Leakage Current ◽  
High Dielectric Constant ◽  
Promising Alternative ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Annealing Effects ◽  
Temperature Deposition ◽  
High Dielectric

ABSTRACTHigh dielectric constant thin films for packaging applications were studied. Compared with polycrystalline or epitaxial ferroelectric thin films amorphous ferroelectric films are a promising alternative because of their ease of processing and low leakage current. Reactive Partially Ionized Beam deposition (RPIB) offers a new approach to deposit high dielectric constant films at a low substrate temperature. As an example, the growth of amorphous BaTiOs thin films using RPIB deposition is described. The films were characterized in terms of dielectric constant and leakage current. The annealing effects on the film properties are also discussed.

EFFECT OF HEAT TREATMENT ON (Cr, Fe)7C3/γ-Fe COATINGS IN SITU SYNTHESIZED BY VACUUM ELECTRON BEAM IRRADIATION

2017 ◽  
Vol 24 (Supp02) ◽  
pp. 1850028
Author(s):  
BINFENG LU ◽  
YUNXIA CHEN ◽  
MENGJIA XU
Keyword(s):  
Heat Treatment ◽  
Wear Resistance ◽  
Electron Beam ◽  
Impact Toughness ◽  
Composite Layer ◽  
Test Machine ◽  
Iron Matrix ◽  
Heat Treated ◽  
The Impact

(Cr, Fe)7C3/[Formula: see text]-Fe composite layer has been in situ synthesized on a low carbon steel surface by vacuum electron beam VEB irradiation. The synthesized samples were then subdued to different heat treatments to improve their impaired impact toughness. The microstructure, impact toughness and wear resistance of the heat-treated samples were studied by means of optical microscope (OM), X-ray diffraction (XRD), scanning electron microscope (SEM), microhardness tester, impact test machine and tribological tester. After heat treatment, the primary and eutectic carbides remained in their original shape and size, and a large number of secondary carbides precipitated in the iron matrix. Since the Widmanstatten ferrite in the heat affected zone (HAZ) transformed to fine ferrite completely, the impact toughness of the heat-treated samples increased significantly. The microhardness of the heat-treated samples decreased slightly due to the decreased chromium content in the iron matrix. The wear resistance of 1000[Formula: see text]C and 900[Formula: see text]C heat-treated samples was almost same with the as-synthesized sample. While the wear resistance of the 800[Formula: see text]C heat-treated one decreased slightly because part of the austenite matrix had transformed to ferrite matrix, which reduced the bonding of carbides particulates.

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