Chemically-Enhanced GaAs Maskless Etching Using a Novel Focused Ion Beam Etching System with a Chlorine Molecular and Radical Beam

1986 ◽  
Vol 75 ◽  
Author(s):  
N. Takado ◽  
K. Asakawa ◽  
H. Arimoto ◽  
T. Morita ◽  
S. Sugata ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Substrate Surface ◽  
Maximum Yield ◽  
Laser Cavity ◽  
High Rate ◽  
Enhancement Effect ◽  
Scanning Time ◽  
Chemical Enhancement ◽  
Deep Groove

AbstractChlorine-enhanced GaAs maskless etching using a novel focused-ion-beametching (FIBE) system has been examined for establishing high-rate and smooth FIBE. The system is composed of an air-locked ultrahigh-vacuum chamber, a 30 KeV Ga+ FIB column and two kinds of chlorine-irradiation nozzles. A fine nozzle enabled us to irradiate a high-density Cl2 flux on a desired, small area of the sample while retaining a sufficiently low surrounding-gas pressure for stable Ga+ FIB emission. Highly chemically-enhanced sputtering yields (up to 50 GaAs molecules per incident ion) were obtained. At the maximum yield, line-scanned deep-groove (6.5 um) etching with a smooth surface, capable of fabricating a laser-cavity optical mirror, was demonstrated. The chemical-enhancement effect showed high FIB-scanning-time dependence. This effect was also observed by irradiating with a plasma-dissociated Cl radicals using a novel radical beam gun. An analytical model, based on the Ga+-ion bombardment on the chlorine-adsorbed substrate surface, suggested that the maximum chemical enhancement is obtained when the Ga+-FIB scanning time is adjusted to the chlorine-coverage time, given by the Cl2-molecule or Cl-radical flux density.

A Cross-Sectional TEM Specimen of a Multilayer Thin Film Prepared Using the FIB Technique

2015 ◽  
Vol 771 ◽  
pp. 108-111
Author(s):  
Harini Sosiati ◽  
Satoshi Hata ◽  
Toshiya Doi
Keyword(s):  
Thin Film ◽  
Focused Ion Beam ◽  
Multilayer Film ◽  
Ion Beam ◽  
Substrate Surface ◽  
Thin Foil ◽  
Advanced Materials ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Stem Image

A focused ion beam (FIB) mill equipped with a microsampling (MS) unit and combined with transmission electron microscopy (TEM)/scanning TEM-energy dispersive x-ray spectroscopy (STEM-EDXS) is a powerful tool for studies of the functional advanced materials. For the studies, the specimen must be prepared as a thin foil which is tranparent to the electron beam. Focused ion beam is very effective method for fabricating TEM specimen of the cross-sectional thin film with the “lift-out” technique using a tungsten (W)-needle probe as a micromanipulator. A multilayer film of MgB2/Ni deposited on a Si (001) substrate prepared by FIB-MS technique is presented. Before FIB fabrication, the surface of the multilayer film was coated with W-film to prevent the surface from bombardment by the ion beam. A bright field (BF)-STEM image of the multilayer film related to two-dimensional (2D) elemental mapping clearly showed the presence of MgB2-and Ni-nanolayers. The measured experimental spacing between Ni-nanolayers was comparable with the actual specimen design, but the thickness of Ni-nanolayer was not. Unexpected nanostructures of the formation of SiO2 film on the substrate surface and holes within the film were observed.

scholarly journals Operation modes of the FALCON ion source as a part of the AMS cluster tool

Nukleonika ◽  
2015 ◽  
Vol 60 (2) ◽  
pp. 327-330 ◽  
Author(s):  
Oleksii Girka ◽  
Alexander Bizyukov ◽  
Ivan Bizyukov ◽  
Michael Gutkin ◽  
Sergei Mishin
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Source ◽  
High Rate ◽  
High Power Density ◽  
Saw Devices ◽  
Source Operation ◽  
High Humidity Environment ◽  
Cluster Tool ◽  
Humidity Environment

Abstract The paper investigates the options to increase the production yield of temperature compensated surface acoustic wave (SAW) devices with a defined range of operational frequencies. The paper focuses on the preparation of large wafers with SiO2 and AlN/Si3N4 depositions. Stability of the intermediate SiO2 layer is achieved by combining high power density UV radiation with annealing in high humidity environment. A uniform thickness of the capping AlN layer is achieved by local high-rate etching with a focused ion beam emitted by the FALCON ion source. Operation parameters and limitations of the etching process are discussed.

Optimization of the Chemical Vapor Deposition Induced Focused Ion Beam

2005 ◽  
Vol 291-292 ◽  
pp. 413-418 ◽  
Author(s):  
Hon Jong Choi ◽  
E.G. Kang ◽  
Seok Woo Lee ◽  
W.P. Hong
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Simple Pattern ◽  
Beam Scanning ◽  
Scanning Time ◽  
Scanning Area ◽  
Optimization Parameters

This paper carried out some experimentation and verification of the chemical vapor deposition induced ion beam and sputtering using the SMI8800 manufactured by SEIKO. FIB-CVD is very useful tools to repair the mask or IC with sub-micrometer precision. However it need to be much studied in some fields such as FIB-CVD mechanism and the characteristics of pattern accuracy and yield of CVD according to many parameters related to ion beam, beam scanning methods and type of specimen etc. Therefore the verification on FIB-CVD characteristic such as accuracy and yield according to scanning area and scanning time is carried out in this study. And it suggests the optimization parameters, various mechanisms of the chemical vapor deposition induced ion beam and sputtering effect for simple pattern.

Chemically Enhanced Focused Ion Beam Selective Patterning of Titanium, Titanium Oxide and Nitride Thin Films

2006 ◽  
Vol 983 ◽  
Author(s):  
Andrei Stanishevsky ◽  
John Melngailis
Keyword(s):  
Thin Films ◽  
Titanium Oxide ◽  
Focused Ion Beam ◽  
Removal Rate ◽  
Ion Beam ◽  
Pure Titanium ◽  
Chemical Enhancement ◽  
Tin Thin Films ◽  
Etching Selectivity ◽  
Film Substrate

AbstractFocused ion beams (FIBs) provide maskless prototyping of 2-D and 3-D micro- and nano-structures for many applications in optics, electronics, and medicine. In many situations, the chemical enhancement of the FIB sputtering process is used to increase the selectivity and removal rate of different materials.In this study, Ti, TiO2, and TiN thin films of different origin were patterned using Ga+ FIB without or with chemical enhancement (or gas assisted etching, GAE). The effects of ion beam parameters and gas ambient on the sputtering yields, etching selectivity, roughening at the film/substrate interface, sub-micron and nano-scale patterning of these materials were investigated.Several gases, including XeF2, CO2, chlorine, bromine, and oxygen, were employed. The largest increase of the sputtering yield was achieved with XeF2 gas, whereas CO2 and oxygen depleted the sputtering rate. Among all gases tested, the Br2 FIB GAE produced the best uniformity of the material removal. It was found that the use of bromine gas provides the best selectivity between the titanium oxide and pure titanium or its nitride.

Characterization and Failure Analysis of 3D Integrated Semiconductor Devices—Novel Tools for Fault Isolation, Target Preparation and High Resolution Material Analysis

2010 ◽  
Author(s):  
Frank Altmann ◽  
Matthias Petzold ◽  
Christian Schmidt ◽  
Roland Salzer ◽  
Cathal Cassidy ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Flip Chip ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Fault Isolation ◽  
High Rate ◽  
Target Preparation ◽  
Integrated Devices ◽  
Analysis Workflow ◽  
Silicon Vias

Abstract In this paper we will introduce novel methodical approaches for material and failure analysis of 3D integrated devices. The potential and advantages of the new concepts and tools will be demonstrated for flip-chip-like interconnects but in addition, for the first time, for Through Silicon Vias (TSV). The employed techniques combine non-destructive fault localization with efficient and accurate target preparation to get access for following microstructure diagnostics, forming a subsequent failure analysis workflow. The concept presented here involves the application of improved Lock-In Thermography (LIT), and three different innovative concepts of high rate Focused Ion Beam (FIB) techniques.

scholarly journals High-Selectivity Growth of GaN Nanorod Arrays by Liquid-Target Magnetron Sputter Epitaxy

Coatings ◽  
2020 ◽  
Vol 10 (8) ◽  
pp. 719
Author(s):  
Elena Alexandra Serban ◽  
Aditya Prabaswara ◽  
Justinas Palisaitis ◽  
Per Ola Åke Persson ◽  
Lars Hultman ◽  
...  
Keyword(s):  
Growth Rate ◽  
Focused Ion Beam ◽  
High Selectivity ◽  
Ion Beam ◽  
Substrate Surface ◽  
Growth Control ◽  
High Growth ◽  
Si Substrates ◽  
Surface Diffusivity ◽  
Magnetron Sputter

Selective-area grown, catalyst-free GaN nanorod (NR) arrays grown on Si substrates have been realized using liquid-target reactive magnetron sputter epitaxy (MSE). Focused ion beam lithography (FIBL) was applied to pattern Si substrates with TiNx masks. A liquid Ga target was sputtered in a mixture gas of Ar and N2, ranging the N2 partial pressure (PN₂) ratio from 100% to 50%. The growth of NRs shows a strong correlation with PN₂ on the selectivity, coalescence, and growth rate of NRs in both radial and axial directions. The growth rate of NRs formed inside the nanoholes increases monotonically with PN₂. The PN₂ ratio between 80% and 90% was found to render both a high growth rate and high selectivity. When the PN₂ ratio was below 80%, multiple NRs were formed in the nanoholes. For a PN₂ ratio higher than 90%, parasitic NRs were grown on the mask. An observed dependence of growth behavior upon the PN₂ ratio is attributed to a change in the effective Ga/N ratio on the substrate surface, as an effect of impinging reactive species, surface diffusivity, and residence time of adatoms. The mechanism of NR growth control was further investigated by studying the effect of nanoholes array pitch and growth temperature. The surface diffusion and the direct impingement of adatoms were found to be the dominant factors affecting the lateral and axial growth rates of NR, respectively, which were well elucidated by the collection area model.

Controlled and Selective Aggregation of Submicrometer Cu-Crystallites on FIB Sensitized p-Si

2001 ◽  
Vol 704 ◽  
Author(s):  
Adrian Spiegel ◽  
Patrik Schmuki
Keyword(s):  
Surface Defect ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Substrate Surface ◽  
Three Dimensional ◽  
Metal Structures ◽  
Metallic Substrates ◽  
Dimensional Growth ◽  
Selective Aggregation ◽  
Modern Technologies

AbstractElectrochemical deposition of metals and alloys onto metallic substrates plays an important role in many modern technologies. Usually, a photolithographic patterning process is used to produce the desired feature on the substrate surface. An alternative method to patterned metal deposition on semiconductors is presented here: it is based on changing the electrochemical properties of the semiconductor by controlled surface defect creation. A focused ion beam (FIB) was used to introduce defects into p-Si, followed by a selective electrochemical reaction to produce metal structures in the sub-micrometer range.In this work we study the selective deposition behavior of Cu on FIB sensitized surface locations and show that crystallite growth follows a three- dimensional growth law. Crystallites grow very rapidly in a first phase and reach a size of roughly 200nm after 5s. Factors determining nucleation, growth, and coalescence of metal clusters are identified and investigated.

FIB Plan and Side View Cross-Sectional TEM Sample Preparation of Nanostructures

2013 ◽  
Vol 20 (1) ◽  
pp. 133-140 ◽  
Author(s):  
Filip Lenrick ◽  
Martin Ek ◽  
Daniel Jacobsson ◽  
Magnus T. Borgström ◽  
L. Reine Wallenberg
Keyword(s):  
Sample Preparation ◽  
Cross Sections ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Substrate Surface ◽  
Side View ◽  
Transmission Electron Microscopy Analysis ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Electron Microscopy Analysis

AbstractFocused ion beam is a powerful method for cross-sectional transmission electron microscope sample preparation due to being site specific and not limited to certain materials. It has, however, been difficult to apply to many nanostructured materials as they are prone to damage due to extending from the surface. Here we show methods for focused ion beam sample preparation for transmission electron microscopy analysis of such materials, demonstrated on GaAs–GaInP core shell nanowires. We use polymer resin as support and protection and are able to produce cross-sections both perpendicular to and parallel with the substrate surface with minimal damage. Consequently, nanowires grown perpendicular to the substrates could be imaged both in plan and side view, including the nanowire–substrate interface in the latter case. Using the methods presented here we could analyze the faceting and homogeneity of hundreds of adjacent nanowires in a single lamella.

The Analysis of Focused Ion Beam Processing Characteristics for Micro Mold Fabrication

2007 ◽  
Vol 329 ◽  
pp. 649-654
Author(s):  
Hon Jong Choi ◽  
E.G. Kang ◽  
W.P. Hong ◽  
Seok Woo Lee ◽  
Young Jae Choi
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Maximum Yield ◽  
Yield Condition ◽  
Chemical Vapor ◽  
Beam Current ◽  
Scanning Area ◽  
Mold Fabrication

FIB equipment has the ability to perform etching and chemical vapor deposition simultaneously. It is very advantageously used to fabricate micro structure components having 3D shape because it has a minimum beam size of Φ 10nm and smaller. Currently, FIB technology has been studied the research fields relating to two problems such as low accuracy and low productivity due to redeposition and a charging effect. This paper focuses on applying FIB technology to the field of micro mold fabrication and repair. As such, the simple micro pattern fabrication techniques and the experimental characteristics are studied on FIB-CVD according to ion beam condition and scanning area. We have encountered some remarks that the result of the experiments according to beam current of 8 pA, shows superior CVD yield. But the result of 1318 pA shows the pattern etched off. Furthermore, we also analyzed the scanning area effect for FIB-CVD yield and suggest the maximum yield condition of the chemical vapor deposition for micro part fabrication.

Sign in / Sign up

Export Citation Format

Share Document