Selectivity Studies On Tantalum Barrier Layer In Copper CMP

2003 ◽  
Vol 767 ◽  
Author(s):  
Arun Vijayakumar ◽  
Tianbao Du ◽  
Kalpathy B. Sundaram ◽  
Vimal Desai
Keyword(s):  
Barrier Layer ◽  
Photoelectron Spectroscopy ◽  
Removal Rate ◽  
Chemical Mechanical Planarization ◽  
Electrochemical Techniques ◽  
Copper Metallization ◽  
Force Microscopy ◽  
Atomic Force ◽  
Surface Analysis Techniques ◽  
Diffusion Barrier Layer

AbstractCopper metallization in sub-0.18 μm semiconductor devices is achieved by combining the dual damascence techniques followed by chemical mechanical planarization (CMP). Tantalum and its nitride have been identified as the diffusion barrier layer for copper metallization. However, the wide differences in properties between copper and tantalum layers result in selectivity problems during CMP process. The aim of this work is to obtain a better understanding on the slurry selectivity for copper and tantalum and to develop slurries with best selectivity performance. In this work, the effect of several chemical parameters (abrasive type, oxidizer type, concentration, pH etc.) was studied through static and dynamic tests using advanced electrochemical techniques and surface analysis techniques. The surface layers of the statically etched copper and tantalum discs were investigated using X-ray photoelectron spectroscopy (XPS) and surface planarity was studied using atomic force microscopy (AFM). Polishing rates results show that alumina-based slurry polished copper very well whereas tantalum removal rate was low. However, for the silica-based slurry the tantalum shows much higher removal rate than copper and better surface planarity was obtained.

Electroless Deposition of NiMoB Diffusion Barrier Layer Film for ULSI-Cu Metallization

2017 ◽  
Vol 727 ◽  
pp. 900-906
Author(s):  
Yue Chun Wang ◽  
Xiu Hua Chen ◽  
Wen Hui Ma ◽  
Xue Mei Liu ◽  
Yu Ping Li ◽  
...  
Keyword(s):  
Barrier Layer ◽  
Diffusion Barrier ◽  
Photoelectron Spectroscopy ◽  
Electroless Deposition ◽  
Copper Interconnects ◽  
X Ray ◽  
Force Microscopy ◽  
Cu Metallization ◽  
Atomic Force ◽  
Diffusion Barrier Layer

NiMoB alloy films were deposited on silicon substrate by electroless deposition for diffusion barrier application in copper interconnects technology. NiMoB(40nm)/SiO2/Si and NiMoB(20nm)/Cu (40nm)/NiMoB(40nm)/SiO2/Si samples were prepared and annealed at temperatures ranging from 400◦C to 600◦C. Samples were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Four Point Probes (FPP) and Atomic Force Microscopy (AFM) to investigate the phases, composition, sheet resistance and surface morphology. The results showed that electroless deposited NiMoB film can be used as an effective Cu diffusion barrier layer until 500◦C. And the failure mechanism is that NiMoB crystallized and grains grew after annealing at high temperature, a large number of Cu grains passed through NiMoB film via grain boundaries and then reacted with Si substrate and oxygen, causing the generation of highly resistive Cu4Si and CuO.

Constraints on removal of Si3N4 film with conformation-controlled poly(acrylic acid) in shallow-trench isolation chemical–mechanical planarization (STI CMP)

2008 ◽  
Vol 23 (1) ◽  
pp. 49-54 ◽  
Author(s):  
Ye-Hwan Kim ◽  
Seung-Mi Lee ◽  
Kee-June Lee ◽  
Ungyu Paik ◽  
Jea-Gun Park
Keyword(s):  
Ionic Strength ◽  
Acrylic Acid ◽  
Removal Rate ◽  
Chemical Mechanical Planarization ◽  
Shallow Trench Isolation ◽  
Force Microscopy ◽  
Atomic Force ◽  
Carboxylate Groups ◽  
Trench Isolation ◽  
Poly Acrylic Acid

The effect of changes in poly(acrylic acid) (PAA) conformation on removal of Si3N4 film was investigated. PAA was used as a passivation agent by adsorption on an Si3N4 film in shallow-trench isolation chemical–mechanical planarization (STI CMP). Adsorption behavior of PAA on the Si3N4 film and the conformation transition were determined by adsorption isotherms and force measurements using atomic force microscopy (AFM) as a function of ionic strength. AFM results revealed that, as ionic strength increases, the repulsive force between the negatively charged carboxylate groups along the backbone of PAA is reduced due to counterion screening and to the changes of PAA conformation from a stretched to a coiled configuration. At high ionic strength, the coiled conformation of PAA formed a dense passivation layer on the Si3N4 film, which led to suppression of the removal rate of Si3N4 film from 72 to 61 Å/min in the STI CMP process.

The pH Effect On Chemical Mechanical Planarization Of Copper

2003 ◽  
Vol 767 ◽  
Author(s):  
Tianbao Du ◽  
Vimal Desai
Keyword(s):  
Photoelectron Spectroscopy ◽  
Removal Rate ◽  
Ph Effect ◽  
Chemical Mechanical Planarization ◽  
Electrochemical Techniques ◽  
Surface Layers ◽  
Removal Rates ◽  
Ph Values ◽  
Alkaline Conditions ◽  
Static Conditions

AbstractThis study explores the effect of pH on the chemical mechanical polishing (CMP) characteristics of copper in H2O2 and KIO3 based slurries under various dynamic and static conditions. High purity copper disc was used to study the dissolution and oxidation kinetics at various pH (2 to 10) with 5% H2O2 or 0.1M KIO3. Electrochemical techniques were used to investigate the dissolution/passivation behavior of Cu. The affected surface layers of the statically etched Cu-disc were investigated using X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM). In 5% H2O2, the Cu removal rate decreases with an increase in pH and reaches minimum at pH 6, and then increases under alkaline conditions. XPS results indicate that the surface oxide formed at various pH values was responsible for this CMP trend. However, with 0.1M KIO3, the CMP removal rates were found to be lower at pH 2. The maximum was observed at pH 4, then the removal rate decreased with the increase of pH. The lower value of removal rate at pH2 was due to the fast interaction between Cu and KIO3 and the precipitation of CuI on the pad, which makes the pad glassy, resulting in lowered removal rates. This was confirmed by XPS measurements. The decreased CMP removal rates when the pH is higher than 4 might be due to the weaker oxidation power of KIO3 with the increase of pH.

The Application of Chemical Mechanical Polishing for Nickel Used in MEMS Devices

2004 ◽  
Vol 816 ◽  
Author(s):  
Arun Vijayakumar ◽  
Tianbao Du ◽  
Kalpathy B. Sundaram ◽  
Vimal Desai
Keyword(s):  
Photoelectron Spectroscopy ◽  
Removal Rate ◽  
Chemical Mechanical Planarization ◽  
Electrochemical Techniques ◽  
Device Fabrication ◽  
Complexing Agent ◽  
Nickel Salt ◽  
Mems Devices ◽  
Surface Layers ◽  
Micro Electro Mechanical Systems

AbstractChemical mechanical planarization (CMP) has found extensive application in the fabrication of micro-electro-mechanical systems (MEMS). Nickel and Nickel based alloys are known to possess favorable properties that make them promising candidates to realize movable structures for MEMS applications. The development of CMP slurry chemistry for Ni that provides good CMP performance is the key in enabling CMP technology for Nickel based MEMS device fabrication. Unfortunately, very little work has been reported in terms of the electrochemical interaction of Ni with various CMP slurry constituents such as oxidizers, complexants and inhibitors. In this study, CMP of nickel was performed using H2O2 as oxidizer and alumina particles as abrasives. Electrochemical techniques were used to investigate the dissolution/passivation behavior of high-purity Ni under static and dynamic conditions in slurries at pH 4 with the addition of oxidizer, complexing agent and nickel salt. The affected surface layers of the statically etched Ni-disc were investigated using X-ray photoelectron spectroscopy (XPS). The Ni removal rate increased with the addition of oxidizer and further increased with the addition of complexing agent and nickel salt. The electrochemical results indicate that the surface chemistry and electrochemical characteristic of Ni play an important role in controlling the polishing behavior.

Investigation of the Effect of Uv-Assisted Oxidation and Nitridation of Hafnium Metal Films

2003 ◽  
Vol 780 ◽  
Author(s):  
C. Essary ◽  
V. Craciun ◽  
J. M. Howard ◽  
R. K. Singh
Keyword(s):  
Uv Radiation ◽  
Photoelectron Spectroscopy ◽  
Grazing Angle ◽  
X Ray Diffraction ◽  
Metal Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Silicon Interface

AbstractHf metal thin films were deposited on Si substrates using a pulsed laser deposition technique in vacuum and in ammonia ambients. The films were then oxidized at 400 °C in 300 Torr of O2. Half the samples were oxidized in the presence of ultraviolet (UV) radiation from a Hg lamp array. X-ray photoelectron spectroscopy, atomic force microscopy, and grazing angle X-ray diffraction were used to compare the crystallinity, roughness, and composition of the films. It has been found that UV radiation causes roughening of the films and also promotes crystallization at lower temperatures.Furthermore, increased silicon oxidation at the interface was noted with the UVirradiated samples and was shown to be in the form of a mixed layer using angle-resolved X-ray photoelectron spectroscopy. Incorporation of nitrogen into the film reduces the oxidation of the silicon interface.

scholarly journals Photocatalytic reduction of graphene oxide with cuprous oxide film under UV-vis irradiation

2020 ◽  
Vol 59 (1) ◽  
pp. 207-214 ◽  
Author(s):  
Yao Wang ◽  
Jianqing Feng ◽  
Lihua Jin ◽  
Chengshan Li
Keyword(s):  
Graphene Oxide ◽  
Photoelectron Spectroscopy ◽  
Low Cost ◽  
Photocatalytic Reduction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Reduced Graphene ◽  
Reduction Efficiency ◽  
Metal Organic ◽  
Reduction Effect

AbstractWe have grown Cu2O films by different routes including self-oxidation and metal-organic deposition (MOD). The reduction efficiency of Cu2O films on graphene oxide (GO) synthesized by modified Hummer’s method has been studied. Surface morphology and chemical state of as-prepared Cu2O film and GO sheets reduced at different conditions have also been investigated using atomic force microscopy (AFM) and x-ray photoelectron spectroscopy (XPS). Results show that self-oxidation Cu2O film is more effective on phtocatalytic reduction of GO than MOD-Cu2O film. Moreover, reduction effect of self-oxidation Cu2O film to GO is comparable to that of environmental-friendly reducing agent of vitamin C. The present results offer a potentially eco-friendly and low-cost approach for the manufacture of reduced graphene oxide (RGO) by photocatalytic reduction.

scholarly journals Interface Structures and Electronic States of Epitaxial Tetraazanaphthacene on Single-Crystal Pentacene

Materials ◽  
2021 ◽  
Vol 14 (5) ◽  
pp. 1088
Author(s):  
Yuki Gunjo ◽  
Hajime Kamebuchi ◽  
Ryohei Tsuruta ◽  
Masaki Iwashita ◽  
Kana Takahashi ◽  
...  
Keyword(s):  
Single Crystal ◽  
Photoelectron Spectroscopy ◽  
Grazing Incidence ◽  
Force Microscopy ◽  
Interface Dipole ◽  
Atomic Force ◽  
Interfacial Structures ◽  
Donor And Acceptor ◽  
A Charge ◽  
Interface Structures

The structural and electronic properties of interfaces composed of donor and acceptor molecules play important roles in the development of organic opto-electronic devices. Epitaxial growth of organic semiconductor molecules offers a possibility to control the interfacial structures and to explore precise properties at the intermolecular contacts. 5,6,11,12-tetraazanaphthacene (TANC) is an acceptor molecule with a molecular structure similar to that of pentacene, a representative donor material, and thus, good compatibility with pentacene is expected. In this study, the physicochemical properties of the molecular interface between TANC and pentacene single crystal (PnSC) substrates were analyzed by atomic force microscopy, grazing-incidence X-ray diffraction (GIXD), and photoelectron spectroscopy. GIXD revealed that TANC molecules assemble into epitaxial overlayers of the (010) oriented crystallites by aligning an axis where the side edges of the molecules face each other along the [1¯10] direction of the PnSC. No apparent interface dipole was found, and the energy level offset between the highest occupied molecular orbitals of TANC and the PnSC was determined to be 1.75 eV, which led to a charge transfer gap width of 0.7 eV at the interface.

scholarly journals Silane-Coating Strategy for Titanium Functionalization Does Not Impair Osteogenesis In Vivo

Materials ◽  
2021 ◽  
Vol 14 (7) ◽  
pp. 1814
Author(s):  
Plinio Mendes Senna ◽  
Carlos Fernando de Almeida Barros Mourão ◽  
Rafael Coutinho Mello-Machado ◽  
Kayvon Javid ◽  
Pietro Montemezzi ◽  
...  
Keyword(s):  
Bone Formation ◽  
Photoelectron Spectroscopy ◽  
Titanium Surface ◽  
Rabbit Model ◽  
Biologically Active ◽  
Force Microscopy ◽  
Atomic Force ◽  
Silane Coating ◽  
Titanium Screws

Silane-coating strategy has been used to bind biological compounds to the titanium surface, thereby making implant devices biologically active. However, it has not been determined if the presence of the silane coating itself is biocompatible to osseointegration. The aim of the present study was to evaluate if silane-coating affects bone formation on titanium using a rabbit model. For this, titanium screw implants (3.75 by 6 mm) were hydroxylated in a solution of H2SO4/30% H2O2 for 4 h before silane-coating with 3-aminopropyltriethoxysilane (APTES). A parallel set of titanium screws underwent only the hydroxylation process to present similar acid-etched topography as a control. The presence of the silane on the surface was checked by x-ray photoelectron spectroscopy (XPS), with scanning electron microscopy (SEM) and atomic force microscopy (AFM). A total of 40 titanium screws were implanted in the tibia of ten New Zealand rabbits in order to evaluate bone-to-implant contact (BIC) after 3 weeks and 6 weeks of healing. Silane-coated surface presented higher nitrogen content in the XPS analysis, while micro- and nano-topography of the surface remained unaffected. No difference between the groups was observed after 3 and 6 weeks of healing (p > 0.05, independent t-test), although an increase in BIC occurred over time. These results indicate that silanization of a titanium surface with APTES did not impair the bone formation, indicating that this can be a reliable tool to anchor osteogenic molecules on the surface of implant devices.

Preparation and Characterization of Chitosan-Casein Phosphopeptides Biocomposite Coatings on the Medical Titanium Alloy

2011 ◽  
Vol 480-481 ◽  
pp. 1065-1069
Author(s):  
Bin Liu ◽  
Lin Wang ◽  
Yin Zhong Bu ◽  
Sheng Rong Yang ◽  
Jin Qing Wang
Keyword(s):  
Photoelectron Spectroscopy ◽  
Attenuated Total Reflectance ◽  
Ti Alloy ◽  
Force Microscopy ◽  
Implant Materials ◽  
Atomic Force ◽  
Casein Phosphopeptides ◽  
Potential Applications ◽  
First Time

Titanium (Ti) and its alloys have been applied in orthopedics as one of the most popular biomedical metallic implant materials. In this work, to enhance the bioactivity, the surface of Ti alloy pre-modified by silane coupling agent and glutaraldehyde was covalently grafted with chitosan (CS) via biochemical multistep self-assembled method. Then, for the first time, the achieved surface was further immobilized with casein phosphopeptides (CPP), which are one group of bioactive peptides released from caseins in the digestive tract and can facilitate the calcium adsorption and usage, to form CS-CPP biocomposite coatings. The structure and composition of the fabricated coatings were characterized by X-ray photoelectron spectroscopy (XPS), attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FTIR) and atomic force microscopy (AFM). As the experimental results indicated, multi-step assembly was successfully performed, and the CS and CPP were assembled onto the Ti alloy surface orderly. It is anticipated that the Ti alloys modified by CS-CPP biocomposite coatings will find potential applications as implant materials in biomedical fields.

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