Formation of High Quality β-FeSi2 by Pre-Amorphization-Enhanced Diffusion

2003 ◽  
Vol 792 ◽  
Author(s):  
Y. Murakami ◽  
A. Kenjo ◽  
T. Sadoh ◽  
T. Yoshitake ◽  
M. Miyao
Keyword(s):  
Solid Phase ◽  
Ion Irradiation ◽  
Formation Rate ◽  
Phase Growth ◽  
High Quality ◽  
Enhanced Diffusion ◽  
Si Substrates ◽  
Initial Stage ◽  
Long Time

ABSTRACTEffects of Ar+ ion irradiation on solid-phase growth of β-FeSi2 have been investigated. Si substrates were amorphized with Ar+ ions (20 keV) before Fe (15 nm) deposition to form Fe(15 nm)/a-Si/c-Si stacked structures. As a reference, Fe/c-Si stacked structures were prepared. In the initial stage of annealing at 800 °C, β-FeSi2 formation was enhanced for pre-amorphized samples, which was due to the enhanced diffusion of silicidation species. In the long time annealing, β-FeSi2 formation proceeded by thermal equilibrium diffusion, and the formation rate was not affected by pre-amorphization. Crystal quality of β-FeSi2 was improved by pre-amorphization. The pre-amorphization enhanced diffusion is useful for formation of high quality β-FeSi2 thin films.

scholarly journals Modelling of Railway Track Temperature Regime with Real Heat-Technical Values for Different Climatic Characteristics

2017 ◽  
Vol 13 (2) ◽  
pp. 134-142 ◽  
Author(s):  
Stanislav Hodás ◽  
Alžbeta Pultznerová
Keyword(s):  
Numerical Modelling ◽  
Temperature Regime ◽  
Railway Track ◽  
High Quality ◽  
Time Operation ◽  
Negative Temperatures ◽  
Freezing Period ◽  
Long Time ◽  
Climatic Characteristics

Abstract High quality of railway track construction is a major priority. One of the quality elements is the resistance to load of railway formation with individual structural layers caused by negative temperatures during the critical freezing period of winter. Numerical modelling allows obtaining more control outputs at different climatic loads. The presented paper shows the load of railway track model with different variants of climate and shows the importance in the designing of the non-transport load under negative temperatures, i.e. observation of transition of the zero isotherm through the layers of railway subgrade. If the subgrade layers of the railway formation are built with high quality and durability then the axis of the track will keep its geometric spatial position during the long-time operation.

scholarly journals HEATING AND QUENCHING PROCEDURE ON THE MAKING OF TRADITIONAL BLACKSMITH STEEL WITH HIGH QUALITY

2019 ◽  
Vol 4 (1) ◽  
pp. 39-50
Author(s):  
Artoto Arkundato ◽  
Misto Misto ◽  
Hadi Paramu ◽  
Gaguk Jatisukamto ◽  
Iwan Sugihartono
Keyword(s):  
Community Service ◽  
Processing Time ◽  
High Hardness ◽  
Manufacturing Processes ◽  
Physical Processes ◽  
High Quality ◽  
Causal Factors ◽  
Heat Temperature ◽  
Long Time

Blacksmith is a people's business that has been going on for a long time in Indonesia. Based on the experience that has been obtained from time to time and hereditary, the blacksmith industry has been done by the community to meet the needs of agricultural and household utensils. However, observe to this people's business, now it decreases with various causal factors, such as the ease of imported goods on the market with lower prices. Many creative efforts need to be carried out so that these people's businesses remain and increasingly develop, among others by improving the quality of the process of a blacksmith so that their products are quite competitive. This article describes the results of the research in the laboratory regarding the physical processes of heating and quenching under blacksmith, which the results have been applied to community service activities at the Suger Kidul villages in Jember Regency. The study aimed to find the most appropriate procedure for steel tool manufacturing processes so that the blacksmith products have high quality as high hardness. The physical process for blacksmith process is heating and quenching. This study analyzes the proper heat (temperature), proper processing time, and proper media for heating and quenching to produce good harness quality of the product.

High Quality GaAs on Si and its Application to a Solar Cell

1988 ◽  
Vol 144 ◽  
Author(s):  
Yoshiro Ohmachi ◽  
Yoshiaki Kadota ◽  
Yoshio Watanabe ◽  
Hiroshi Okamoto
Keyword(s):  
Solar Cell ◽  
Critical Thickness ◽  
High Quality ◽  
Strained Layer ◽  
Cyclic Annealing ◽  
Si Substrates ◽  
Gaas On Si ◽  
Strained Layer Superlattice ◽  
Buffer Structure

ABSTRACTEpitaxial growth using thermal annealing and a strained layer superlattice is studied to obtain high-quality GaAs device layers on Si substrates. Crystalline quality of GaAs-on-Si is found to improve with thermal cyclic annealing at temperatures higher than the growth temperature and cooling down to 300°C. It is also found that the optimum InGaAs/GaAs strained layer superlattice buffer structure is one whose total thickness is several times the calculated critical thickness for the average In-mole fraction of the SLS buffer. Configurations and structures of dislocation reductions are ex-amined by TEM observations. A GaAs solar cell is successfully constructed and is found to show total area efficiencies of 18.3% under AM 0 and 20.0% under AM 1.5 conditions.

Process and Mechanism of CoSi2/Si Solid Phase Epitaxy by Multilayer Reaction

1999 ◽  
Vol 580 ◽  
Author(s):  
Bing-Zong Li ◽  
Xin-Ping Qu ◽  
Guo-Ping Ru ◽  
Ning Wang ◽  
Paul Chu
Keyword(s):  
Epitaxial Growth ◽  
Solid Phase ◽  
Amorphous Layer ◽  
Solid Phase Epitaxy ◽  
Initial Stage ◽  
Vital Effect ◽  
Amorphous Si ◽  
Kinetics Of ◽  
State Amorphization

AbstractA multilayer structure of Co/a-Si/Ti/Si(100) together with Co/Ti/Si(100) is applied to investigate the process and mechanism of CoSi2 epitaxial growth on a Si(100) substrate. The experimental results show that by adding an amorphous Si layer with a certain thickness, the epitaxial quality of CoSi2 is significantly improved. A multi-element amorphous layer is formed by a solid state amorphization reaction at the initial stage of the multilayer reaction. This layer acts as a diffusion barrier, which controls the atomic interdiffusion of Co and Si and limits the supply of Co atoms. It has a vital effect on the multilayer reaction kinetics, and the epitaxial growth of CoSi2 on Si. The kinetics of the CoSi2 growth process from multilayer reactions is investigated.

High-Quality Boron and BF2+-Implanted P+ Junctions in Si Using Solid Phase Epitaxy and Transient Annealing

1984 ◽  
Vol 35 ◽  
Author(s):  
P.K. Vasudev ◽  
A.E. Schmitz ◽  
G.L. Olson
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Impurity Effects ◽  
Solid Phase Crystallization ◽  
High Quality ◽  
Time Resolved ◽  
Boron Doped ◽  
Epitaxial Regrowth ◽  
Doping Profiles

ABSTRACTWe report on a systematic study of the doping profiles resulting from rapid thermal annealing of boron and BF2+-implanted silicon samples that were preamorphized by Si+ implantation. A two-step process consisting of an initial solid phase epitaxial regrowth followed by a brief (~5 sec) high temperature (1050ଌ) anneal produces extremely shallow (<1500Å) junctions with low defect concentrations. The quality of the epitaxial regrowth is very sensitive to implant conditions and impurity effects as deduced from time-resolved reflectivity measurements. Using the best conditions for implantation and solid phase crystallization, we have obtained boron-doped regions with sheet resistivities of 40 Ω/ and BF2-doped regions of resistivity 60 Ω/.

High Quality GaP Growth on Si Substrates By Mocvd

1988 ◽  
Vol 116 ◽  
Author(s):  
K. Uchida ◽  
Y. Kohama ◽  
M. Tajima ◽  
T. Soga ◽  
T. Jimbo ◽  
...  
Keyword(s):  
Mass Spectroscopy ◽  
Diffraction Peak ◽  
Crystal Quality ◽  
X Ray Diffraction ◽  
High Quality ◽  
Double Crystal ◽  
X Ray ◽  
Si Substrates ◽  
Secondary Ion

AbstractGaP crystals are grown on Si substrates by MOCVD. Double crystal X-ray diffraction indicates that the crystal quality of GaP layers greatly improves when AsH3 is supplied before growth. The FWHM of (400) diffraction peak of the GaP layer decreases as the thickness increases and the best FWHM of 112.5 arcs is obtained at a thickness of 5 μm. The GaP/Si interface is characterized using secondary ion mass spectroscopy (SIMS) to demonstrate the effect of AsH3.

scholarly journals Impact of Conditioning Substances and Filtration Pressure on Dewatering Efficiency of Sewage Sludge

Energies ◽  
2021 ◽  
Vol 14 (2) ◽  
pp. 361
Author(s):  
Tomasz Kamizela ◽  
Mariusz Kowalczyk
Keyword(s):  
Phase Separation ◽  
Fly Ash ◽  
Filter Cake ◽  
Solid Phase ◽  
Sludge Dewatering ◽  
High Quality ◽  
Filtration Process ◽  
Filtration Pressure ◽  
Selection Of

Sludge dewatering is a key element in sludge’s processing and management. Solid-phase separation, sludge volume reduction and the separation of a high-quality supernatant are the main tasks of the dewatering devices. The effectiveness of this task, in turn, results from the selection of the dewatering method and conditioning of the sludge before dewatering. The aim of the research was to determine the influence of conditioning substances (polyelectrolyte, fly ash and zeolite) on the efficiency of dewatering at variable filtration pressure. The use of polyelectrolyte in sludge conditioning was a solution that increased the efficiency of the filtration process. On the contrary, the use of structure-forming substances (fly ash and zeolite) slows the process but reduces the hydration of the filter cake. The same trends were obtained in dual conditioning combining dosing of polyelectrolyte and ash or zeolite. It was also shown that the dewatering efficiency of conditioned sludge with these two different substances (ash and zeolite) was the same. The use of zeolite in independent or dual conditioning was important for the quality of the supernatant.

scholarly journals Propuesta de igualdad de género en Educación Física: adaptaciones de las normas en fútbol (A gender equality proposal in Physical Education: adaptations of football rules)

Retos ◽  
2017 ◽  
pp. 293-297
Author(s):  
Laura Rodríguez Rodríguez ◽  
Emilio Miraflores Gómez
Keyword(s):  
Physical Education ◽  
Gender Equality ◽  
Gender Inequality ◽  
Role Models ◽  
Gender Inequalities ◽  
High Quality ◽  
Teaching Activity ◽  
Long Time ◽  
Students Attitudes

La desigualdad de género es un problema aún existente en nuestra sociedad. Aunque va evolucionando, positivamente, en el ámbito de la actividad física y el deporte, es evidente el largo camino que aún queda por recorrer para conseguir una igualdad real entre géneros. La Educación Física escolar es un medio desde el que se puede intervenir para intentar acabar con el problema, o en su caso, mitigarlo. El artículo muestra una propuesta de innovación, cuyo objetivo es vencer las desigualdades de género y sus estereotipos, como herencia histórica en nuestra sociedad. Para ello, se plantean unas propuestas de adaptación de las normas y reglas del fútbol, para su trabajo en las clases de Educación Física con alumnado de 2º curso de Educación Secundaria Obligatoria (ESO). La consecución de los objetivos previstos necesita de una alta calidad en la labor docente, como modelo, como medio promotor y corrector de las actitudes del alumnado, además de la transmisión de valores sobre igualdad.Abstract. Gender inequality exists and still is an issue even in today’s society. Though it has improved over the years, there is still a long way to go to achieve a real equality between both sexes in the field of physical activity and sports. Physical Education is a way from where we can intervene and try to eradicate this problem, or mitigate it. This article shows a proposal for innovation, whose goal is to eliminate gender inequalities and their associated stereotypes, stem from a long time in our society. To achieve that, this article presents several proposals of adaptations of different football rules, to be applied in Physical Education classes with 2nd Educación Secundaria Obligatoria (ESO) year students. The achievement of the expected goals needs a high quality of the teaching activity, teachers being role models, promoting and correcting students’ attitudes, as well as transmitting values of gender equality.

scholarly journals Research of technological properties of bread made with the addition of beet kvass

2021 ◽  
Vol 23 (96) ◽  
pp. 3-7
Author(s):  
H. Karpyk ◽  
M. Kukhtyn ◽  
V. Selskyi ◽  
I. Nazarko ◽  
O. Pokotylo ◽  
...  
Keyword(s):  
Healthy Eating ◽  
Rapid Development ◽  
Bakery Products ◽  
Technological Properties ◽  
Drying Process ◽  
High Quality ◽  
Physico Chemical ◽  
Long Time ◽  
Bread Production

The issue of healthy eating has always been relevant, especially this problem has been exacerbated by the rapid development of food technology and the production of a significant number of semi-finished products. As a result, there is a need to develop new types of food, including unleavened and low-calorie bread, bakery products enriched with vitamins, minerals, plant supplements. The aim of the work was to substantiate the technology of bread production with the use of beet kvass and to investigate the physico-chemical quality indicators of experimental samples of finished products. Technological indicators that characterize the quality of bread: moisture, porosity, crumbliness, acidity were determined by generally accepted methods. Bread made with beet kvass has been found to have well-developed crumb porosity, does not crumble for a long time, hardens slowly, and is resistant to microbiological spoilage. The crumb is not deformed and elastic when pressed. Replacing part of the water during the kneading of wheat dough with beet kvass (50 % by weight of flour) makes it possible to intensify the maturation of semi-finished products, both in traditional and accelerated technologies, to create a more complete nutrient medium for yeast activation, to obtain high quality bakery products storage. It has also been found that during the storage of bread, the hydrophilic properties of the crumb, its crumbliness changes slightly. The drying process is most intense during the first day, then slows down.

scholarly journals High Quality InAs Grown on Silicon Substrate

2019 ◽  
Author(s):  
liu jinan
Keyword(s):  
Vapor Deposition ◽  
Growth Process ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
High Quality ◽  
Si Substrates ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Structural Characterizations

We have investigated growth of InAs on Si substrates by metal organic chemical vapor deposition. The main investigation is the effect of incorporating more nucleation layers into the growth process. The addition of more nucleation layers clearly correlates with the surface morphology and quality of the InAs layer. Morphological and structural characterizations prove that a perfect quality InAs layer is achieved by incorporating five nucleation layers.

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