Influence of Atomic Hydrogen on Nickel Silicide Formation

2004 ◽  
Vol 810 ◽  
Author(s):  
A. Vengurlekar ◽  
Satheesh Balasubramanian ◽  
S. Ashok ◽  
N. D. Theodore ◽  
D.Z. Chi
Keyword(s):  
Sheet Resistance ◽  
Secondary Ion Mass Spectrometry ◽  
Hydrogen Plasma ◽  
Nickel Silicide ◽  
Oxide Semiconductor ◽  
Si Substrate ◽  
Nickel Deposition ◽  
Transmission Electron ◽  
Hall Effect Measurements ◽  
Secondary Ion

ABSTRACTNickel monosilicide (NiSi) is a leading contender to replace the currently used class of silicides for contacts to the source, drain and gate regions in Complimentary Metal-Oxide- Semiconductor (CMOS) circuits. In this work, the effect of substrate hydrogenation by a hydrogen plasma treatment prior to nickel deposition and silicidation was studied. The sheet resistance of the silicide film shows a significant decrease under hydrogenation of the Si substrate prior to Ni evaporation/anneal for projected silicidation temperatures below 600°C. Correspondingly, the Si region near the interface is decorated with defects. At higher silicidation temperatures, the sheet resistance rises along with greater in-diffusion of Ni into the hydrogenated Si samples. Secondary Ion Mass Spectrometry, Transmission Electron Microscopy and Hall effect measurements are used to characterize the samples.

Sb-Doped Polycrystalline Si Obtained by Means of Sb and Si Thin-Film Reactions

1987 ◽  
Vol 106 ◽  
Author(s):  
S. F. Gong ◽  
A. E. Robertsson ◽  
S.-E. Hörnström ◽  
G. Radnoczi ◽  
H. T. G. Hentzell
Keyword(s):  
Thin Film ◽  
Electron Spectroscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Si Substrate ◽  
Transmission Electron ◽  
Diffusion Source ◽  
Amorphous Si ◽  
P Type ◽  
Secondary Ion

ABSTRACTWe have grown Sb-doped poly-Si by thin-film reactions between Sb and amorphous Si (a-Si). The reactions and microstructures of the films were investigated by transmission electron microscopy (TEM) during in situ annealing and Auger electron spectroscopy (AES). The reactions either resulted in an amorphous Sb-Si (a-Sb-Si) alloy or caused crystallization of a-Si at low temperatures, depending on the film thickness of the a-Si layer as well as the heating rate. The electrical properties of the as-deposited and the annealed thin multi-layers deposited on SiO2 layer were determined using Hall measurements. After annealing at 1375 K for 60 minutes, Sb-doped poly-Si with a resistivity of 1.4×10−2 ohm-cm was obtained. A p-n junction was formed in a p-type Si substrate by using an a-Si/Sb/a-Si multi-layer as a diffusion source. The doping concentration in the Si substrate was obtained using secondary ion mass spectrometry (SIMS).

Effects of Concurrent Co or Ti Silicidation on Transient Diffusion and End-of-Range Damage in Phosphorus Implanted Silicon

1992 ◽  
Vol 262 ◽  
Author(s):  
J.W. Honeycutt ◽  
J. Ravi ◽  
G. A. Rozgonyi
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Complete Removal ◽  
Dislocation Loops ◽  
Enhanced Diffusion ◽  
Depth Profiles ◽  
Enhanced Dissolution ◽  
Implantation Damage ◽  
Transmission Electron ◽  
Defect Behavior ◽  
Secondary Ion

ABSTRACTThe effects of Ti and Co silicidation on P+ ion implantation damage in Si have been investigated. After silicidation of unannealed 40 keV, 2×1015 cm-2 P+ implanted junctions by rapid thermal annealing at 900°C for 10–300 seconds, secondary ion mass spectrometry depth profiles of phosphorus in suicided and non-silicided junctions were compared. While non-silicided and TiSi2 suicided junctions exhibited equal amounts of transient enhanced diffusion behavior, the junction depths under COSi2 were significantly shallower. End-of-range interstitial dislocation loops in the same suicided and non-silicided junctions were studied by planview transmission electron microscopy. The loops were found to be stable after 900°C, 5 minute annealing in non-silicided material, and their formation was only slightly effected by TiSi2 or COSi2 silicidation. However, enhanced dissolution of the loops was observed under both TiSi2 and COSi2, with essentially complete removal of the defects under COSi2 after 5 minutes at 900°C. The observed diffusion and defect behavior strongly suggest that implantation damage induced excess interstitial concentrations are significantly reduced by the formation and presence of COSi2, and to a lesser extent by TiSi2. The observed time-dependent defect removal under the suicide films suggests that vacancy injection and/or interstitial absorption by the suicide film continues long after the suicide chemical reaction is complete.

scholarly journals Изменение структуры и свойств приповерхностного слоя Si, имплантированного Zn, в зависимости от флюенса облучения ионами -=SUP=-132-=/SUP=-Xe-=SUP=-26+-=/SUP=- с энергией 167 МэВ

2019 ◽  
Vol 53 (3) ◽  
pp. 332
Author(s):  
В.В. Привезенцев ◽  
В.С. Куликаускас ◽  
В.А. Скуратов ◽  
О.С. Зилова ◽  
А.А. Бурмистров ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Zinc Oxide ◽  
Cross Section ◽  
Secondary Ion Mass Spectrometry ◽  
Sample Surface ◽  
Transmission Electron ◽  
Oxide Phases ◽  
Secondary Ion ◽  
Surface Pores ◽  
Scanning Electron

AbstractSingle-crystal n -Si(100) wafers are implanted with ^64Zn^+ ions with an energy of 50 keV and dose of 5 × 10^16 cm^–2. Then the samples are irradiated with ^132Xe^26+ ions with an energy of 167 MeV in the range of fluences from 1 × 10^12 to 5 × 10^14 cm^–2. The surface and cross section of the samples are visualized by scanning electron microscopy and transmission electron microscopy. The distribution of implanted Zn atoms is studied by time-of-flight secondary-ion mass spectrometry. After irradiation with Xe, surface pores and clusters consisting of a Zn–ZnO mixture are observed at the sample surface. In the amorphized subsurface Si layer, zinc and zinc-oxide phases are detected. After irradiation with Xe with a fluence of 5 × 10^14 cm^–2, no zinc or zinc-oxide clusters are detected in the samples by the methods used in the study.

Determination of the Distribution of Ion Implantation Boron in Silicon

2000 ◽  
Vol 650 ◽  
Author(s):  
Te-Sheng Wang ◽  
A.G. Cullis ◽  
E.J.H. Collart ◽  
A.J. Murrell ◽  
M.A. Foad
Keyword(s):  
Electron Microscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Low Energy ◽  
Concentration Profiles ◽  
Impurity Profile ◽  
Transmission Electron ◽  
Device Applications ◽  
P Type ◽  
Secondary Ion

ABSTRACTBoron is the most important p-type dopant in Si and it is essential that, especially for low energy implantation, both as-implanted B distributions and those produced by annealing should be characterized in very great detail to obtain the required process control for advanced device applications. While secondary ion mass spectrometry (SIMS) is ordinarily employed for this purpose, in the present studies implant concentration profiles have been determined by direct B imaging with approximately nanometer depth and lateral resolution using energy-filtered imaging in the transmission electron microscopy. The as-implanted B impurity profile is correlated with theoretical expectations: differences with respect to the results of SIMS measurements are discussed. Changes in the B distribution and clustering that occur after annealing of the implanted layers are also described.

Electrical Properties of Undoped 6H- and 4H-SiC Bulk Crystals Grown by Halide Chemical Vapor Deposition

2006 ◽  
Vol 527-529 ◽  
pp. 625-628
Author(s):  
Hun Jae Chung ◽  
Sung Wook Huh ◽  
A.Y. Polyakov ◽  
Saurav Nigam ◽  
Qiang Li ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Boron Concentration ◽  
Secondary Ion Mass Spectrometry ◽  
Nitrogen Concentration ◽  
Chemical Vapor ◽  
Bulk Crystals ◽  
Hall Effect Measurements ◽  
Site Competition ◽  
Secondary Ion

Undoped 6H- and 4H-SiC crystals were grown by Halide Chemical Vapor Deposition (HCVD). Concentrations of impurities were measured by various methods including secondary-ion-mass spectrometry (SIMS). With increasing C/Si ratio, nitrogen concentration decreased and boron concentration increased as expected for the site-competition effect. Hall-effect measurements on 6H-SiC crystals showed that with the increase of C/Si ratio from 0.06 to 0.7, the Fermi level was shifted from Ec-0.14 eV (nitrogen donors) to Ev+0.6 eV (B-related deep centers). Crystals grown with C/Si > 0.36 showed high resistivities between 1053 and 1010 4cm at room temperature. The high resistivities are attributed to close values of the nitrogen and boron concentrations and compensation by deep defects present in low densities.

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