Damage Removal Processes in Ion Implanted, Rapidly Annealed GaAs

1985 ◽  
Vol 52 ◽  
Author(s):  
D. C. Jacobson ◽  
S. J. Pearton ◽  
R. Hull ◽  
J. M. Poate ◽  
J. S. Williams
Keyword(s):  
Carrier Mobility ◽  
Secondary Ion Mass Spectrometry ◽  
High Dose ◽  
Electrical Characteristics ◽  
Dislocation Loops ◽  
Transmission Electron ◽  
Capacitance Voltage ◽  
Lattice Damage ◽  
Removal Processes ◽  
Secondary Ion

ABSTRACTThe removal of lattice damage and consequent activation by rapid thermal annealing of implanted Si, Se, Zn and Be in GaAs was investigated by capacitance-voltage profiling, Hall measurements, transmission electron microscopy (TEM), secondary ion mass spectrometry and Rutherford backscattering. The lighter species show optimum electrical characteristics at lower annealing temperatures (˜850°C for Be, ˜950°C for Si) than the heavier species (˜900°C for Zn, ˜1000°C for Se), consistent with the amount of lattice damage remaining after annealing. TEM reveals the formation of high densities (107 cm−2) of dislocation loops after 800°C, 3s anneals of high dose (1×1015 cm−2) implanted GaAs, which are gradually reduced in density after higher temperatures anneals (˜1000°C). The remaining loops do not appear to effect the electrical activation or carrier mobility in the implanted layer, the latter being comparable to bulk values.

Effects of Concurrent Co or Ti Silicidation on Transient Diffusion and End-of-Range Damage in Phosphorus Implanted Silicon

1992 ◽  
Vol 262 ◽  
Author(s):  
J.W. Honeycutt ◽  
J. Ravi ◽  
G. A. Rozgonyi
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Complete Removal ◽  
Dislocation Loops ◽  
Enhanced Diffusion ◽  
Depth Profiles ◽  
Enhanced Dissolution ◽  
Implantation Damage ◽  
Transmission Electron ◽  
Defect Behavior ◽  
Secondary Ion

ABSTRACTThe effects of Ti and Co silicidation on P+ ion implantation damage in Si have been investigated. After silicidation of unannealed 40 keV, 2×1015 cm-2 P+ implanted junctions by rapid thermal annealing at 900°C for 10–300 seconds, secondary ion mass spectrometry depth profiles of phosphorus in suicided and non-silicided junctions were compared. While non-silicided and TiSi2 suicided junctions exhibited equal amounts of transient enhanced diffusion behavior, the junction depths under COSi2 were significantly shallower. End-of-range interstitial dislocation loops in the same suicided and non-silicided junctions were studied by planview transmission electron microscopy. The loops were found to be stable after 900°C, 5 minute annealing in non-silicided material, and their formation was only slightly effected by TiSi2 or COSi2 silicidation. However, enhanced dissolution of the loops was observed under both TiSi2 and COSi2, with essentially complete removal of the defects under COSi2 after 5 minutes at 900°C. The observed diffusion and defect behavior strongly suggest that implantation damage induced excess interstitial concentrations are significantly reduced by the formation and presence of COSi2, and to a lesser extent by TiSi2. The observed time-dependent defect removal under the suicide films suggests that vacancy injection and/or interstitial absorption by the suicide film continues long after the suicide chemical reaction is complete.

Mn Implantation for New Applications of 4H-SiC

2012 ◽  
Vol 717-720 ◽  
pp. 221-224 ◽  
Author(s):  
Margareta K. Linnarsson ◽  
Jennifer Wong-Leung ◽  
Anders Hallén ◽  
S.I. Khartsev ◽  
A.M. Grishin
Keyword(s):  
Electron Microscopy ◽  
Heat Treatment ◽  
Near Infrared ◽  
Secondary Ion Mass Spectrometry ◽  
Stacking Faults ◽  
Structural Disorder ◽  
High Dose ◽  
Transmission Electron ◽  
New Applications ◽  
Secondary Ion

Structural disorder and lattice recovery of high dose, manganese implanted, semi-insulating, 4H-SiC have been studied by secondary ion mass spectrometry, Rutherford backscattering in channeling directions, visible-to-near infrared optical spectroscopy as well as with transmission electron microscopy. After heat treatment at 1400 and 1600 °C, a substantial rearrangement of manganese is observed in the implanted region. However, the crystal has not been fully recovered. More disorder remains in the [11 3] compared to the [0001] channel direction. Stacking faults, voids and 3C inclusions are observed in the implanted region. A Mn containing phase has most likely formed.

Fabrication and Evaluation of Ternary Co-Fe-Si Structures Produced by Ion Beam Synthesis

1992 ◽  
Vol 279 ◽  
Author(s):  
Tim D. Hunt ◽  
Brian J. Sealy ◽  
Jochen Hanebeck ◽  
Karen J. Reeson ◽  
Kevin P. Homewood ◽  
...  
Keyword(s):  
Single Phase ◽  
Low Dose ◽  
Secondary Ion Mass Spectrometry ◽  
Ion Beam ◽  
Single Species ◽  
High Dose ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Secondary Ion

ABSTRACTDual implantation of cobalt and iron into silicon (100) wafers and subsequent annealing has been used to form layers containing mixtures of CoSi2 and FeSi2. The structure and properties of the layers were followed by Secondary Ion Mass Spectrometry (SIMS), cross-sectional transmission electron microscopy (XTEM), Transmission Electron Diffraction (TED), Rutherford Backscattering Spectroscopy (RBS), and photoluminescence (PL). When a high dose of both species was implanted, segregation of the cobalt and iron occurred which for 1000°C anneals, resulted in an epitaxial layer of αFeSi2 upon a CoSi2 layer. The epitaxial quality of both of these layers was superior to those previously fabricated by single species implants. For a low dose cobalt implant followed by a high dose iron implant, a single phase solid solution was formed and segregation did not occur. Photoluminescence at 1.54 urn was observed from this layer, but with a much lower intensity and a broader line width than that from a pure βFeSi2 layer.

Defects Related to Mixing Behavior of Highly Silicon-Doped GaAs/AlAs Superlatitices

1988 ◽  
Vol 144 ◽  
Author(s):  
N. D. Theodore ◽  
C. B. Carter ◽  
P. Mei ◽  
S. A. Schwarz ◽  
J. P. Harbison ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Mass Spectrometry ◽  
Transmission Electron Microscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Dislocation Loops ◽  
Silicon Doping ◽  
Transmission Electron ◽  
Mixing Behavior ◽  
Silicon Doped ◽  
Secondary Ion

ABSTRACTThe mixing of highly silicon-doped GaAs/AlAs superlattices as a result of annealing has been investigated by transmission electron microscopy and secondary ion mass spectrometry. As silicon doping-levels were raised in this study to 1019 cm−3 and 1020 cm−3 defects such as prismatic dislocation loops and Si-rich precipitates were observed to occur in the superlattices upon annealing. A correlation has been observed between the presence of particular defects and the inhibition of dopant-enhanced superlattice mixing.

Calibration Method for Elemental Quantification

2000 ◽  
Vol 6 (S2) ◽  
pp. 536-537
Author(s):  
C. B. Vartuli ◽  
F. A. Stevie ◽  
L. A. Giannuzzi ◽  
T. L. Shofner ◽  
B. M. Purcell ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Peak Concentration ◽  
Energy Dispersive Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Rutherford Backscattering Spectrometry ◽  
Calibration Method ◽  
High Dose ◽  
High Concentration ◽  
Borophosphosilicate Glass ◽  
Secondary Ion

Energy Dispersive Spectrometry (EDS) is generally calibrated for quantification using elemental standards. This can introduce errors when quantifying non-elemental samples and does not provide an accurate detection limit. In addition, variations between analysis tools can lead to values that differ considerably, especially for trace elements. By creating a standard with an exact trace composition, many of the errors inherent in EDS quantification measurements can be eliminated.The standards are created by high dose ion implantation. For ions implanted into silicon, a dose of 1E16 cm-2 results in a peak concentration of approximately 1E21 cm-3 or 2% atomic. The exact concentration can be determined using other methods, such as Rutherford Backscattering Spectrometry (RBS) or Secondary Ion Mass Spectrometry (SIMS). For this study, SIMS analyses were made using a CAMECA IMS-6f magnetic sector. Measurement protocols were used that were developed for high concentration measurements, such as B and P in borophosphosilicate glass (BPSG).

Oxygen Precipitation Along Individual Ion Tracks During High Dose O+ Implantation into Silicon

1987 ◽  
Vol 93 ◽  
Author(s):  
Witold P. Maszara
Keyword(s):  
Silicon Layer ◽  
High Dose ◽  
Regular Array ◽  
Ion Tracks ◽  
Oxygen Precipitation ◽  
Transmission Electron ◽  
Oxygen Gas ◽  
Kinetics Of ◽  
Secondary Ion ◽  
Lattice Matched

ABSTRACTSilicon wafers with and without protective1Ahermil oxide were implanted with oxygen at 150keV with doses 1.6 – 2.0×1018 cm−2. Transmission electron microscopy (TEM) and secondary ion mass spectroscopy (SIMS) were used to study the top silicon layer remaining above the implanted buried oxide. regular array of spheroidal voids filled with oxygen gas was observed only in the samples that were not protected by the oxide. The voids were aligned into individual columns whose crystallographic orientation with respect to the host silicon lattice matched the direction of the implantation. The origin and the kinetics of their formation are discussed.

scholarly journals Изменение структуры и свойств приповерхностного слоя Si, имплантированного Zn, в зависимости от флюенса облучения ионами -=SUP=-132-=/SUP=-Xe-=SUP=-26+-=/SUP=- с энергией 167 МэВ

2019 ◽  
Vol 53 (3) ◽  
pp. 332
Author(s):  
В.В. Привезенцев ◽  
В.С. Куликаускас ◽  
В.А. Скуратов ◽  
О.С. Зилова ◽  
А.А. Бурмистров ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Zinc Oxide ◽  
Cross Section ◽  
Secondary Ion Mass Spectrometry ◽  
Sample Surface ◽  
Transmission Electron ◽  
Oxide Phases ◽  
Secondary Ion ◽  
Surface Pores ◽  
Scanning Electron

AbstractSingle-crystal n -Si(100) wafers are implanted with ^64Zn^+ ions with an energy of 50 keV and dose of 5 × 10^16 cm^–2. Then the samples are irradiated with ^132Xe^26+ ions with an energy of 167 MeV in the range of fluences from 1 × 10^12 to 5 × 10^14 cm^–2. The surface and cross section of the samples are visualized by scanning electron microscopy and transmission electron microscopy. The distribution of implanted Zn atoms is studied by time-of-flight secondary-ion mass spectrometry. After irradiation with Xe, surface pores and clusters consisting of a Zn–ZnO mixture are observed at the sample surface. In the amorphized subsurface Si layer, zinc and zinc-oxide phases are detected. After irradiation with Xe with a fluence of 5 × 10^14 cm^–2, no zinc or zinc-oxide clusters are detected in the samples by the methods used in the study.

Determination of the Distribution of Ion Implantation Boron in Silicon

2000 ◽  
Vol 650 ◽  
Author(s):  
Te-Sheng Wang ◽  
A.G. Cullis ◽  
E.J.H. Collart ◽  
A.J. Murrell ◽  
M.A. Foad
Keyword(s):  
Electron Microscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Low Energy ◽  
Concentration Profiles ◽  
Impurity Profile ◽  
Transmission Electron ◽  
Device Applications ◽  
P Type ◽  
Secondary Ion

ABSTRACTBoron is the most important p-type dopant in Si and it is essential that, especially for low energy implantation, both as-implanted B distributions and those produced by annealing should be characterized in very great detail to obtain the required process control for advanced device applications. While secondary ion mass spectrometry (SIMS) is ordinarily employed for this purpose, in the present studies implant concentration profiles have been determined by direct B imaging with approximately nanometer depth and lateral resolution using energy-filtered imaging in the transmission electron microscopy. The as-implanted B impurity profile is correlated with theoretical expectations: differences with respect to the results of SIMS measurements are discussed. Changes in the B distribution and clustering that occur after annealing of the implanted layers are also described.

Formation of Excess Donors During High-Dose 74Ge+ Ion Implantation

1994 ◽  
Vol 354 ◽  
Author(s):  
Z. Xia ◽  
E. Ristolainen ◽  
R. Elliman ◽  
H. Ronkainen ◽  
S. Eränen ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Structural Defects ◽  
High Dose ◽  
Donor Concentration ◽  
Materials Analysis ◽  
Si Substrates ◽  
Transmission Electron ◽  
Activation Annealing ◽  
Secondary Ion

AbstractRecently observations that high-dose Ge implantations into Si substrates caused the n-type carrier concentration to increase were attributed to residual structural defects after activation annealing [7,12]. However, co-implantation of an n-type impurity is another possibility. The origin of this excess donor concentration has been studied in this work. The possibilities of residual defects versus implantation of impurities have been investigated using two different implanters and materials analysis. Comparison of data from different implanters showed that the concentration of excess donors was sensitive to the implanter configuration. Furthermore, transmission electron microscopy (TEM), Rutherford backscattering channeling (RBS-C), and spreading resistance profiling (SRP) data showed that the excess donor effect was related to impurities rather than residual defects. Secondary-ion mass spectroscopy (SIMS) and SRP measurements confirmed that impurities such as 75As ions were present after implants. This impurity easily explains the excess donor concentration when 75Ge implants are performed into silicon wafers doped with phosphorous.

Sign in / Sign up

Export Citation Format

Share Document