Design of 1V Operating Fully Differential OTA Using NMOS Inverters in 0.18µm CMOS Technology

2009 ◽  
Vol E92-C (6) ◽  
pp. 822-827 ◽  
Author(s):  
Atsushi TANAKA ◽  
Hiroshi TANIMOTO
Keyword(s):  
Cmos Technology ◽  
Fully Differential

scholarly journals Design of Multi Standard Near Field Communication Outphasing Transmitter with Modulation Wave Shaping

Electronics ◽  
2021 ◽  
Vol 10 (2) ◽  
pp. 188
Author(s):  
Žiga Korošak ◽  
Nejc Suhadolnik ◽  
Anton Pleteršek
Keyword(s):  
Radio Frequency Identification ◽  
High Efficiency ◽  
Near Field ◽  
Cmos Technology ◽  
Near Field Communication ◽  
Differential Delay ◽  
Fully Differential ◽  
Delay Locked Loop ◽  
Modulation Wave ◽  
The Individual

The aim of this work is to tackle the problem of modulation wave shaping in the field of near field communication (NFC) radio frequency identification (RFID). For this purpose, a high-efficiency transmitter circuit was developed to comply with the strict requirements of the newest EMVCo and NFC Forum specifications for pulse shapes. The proposed circuit uses an outphasing modulator that is based on a digital-to-time converter (DTC). The DTC based outphasing modulator supports amplitude shift keying (ASK) modulation, operates at four times the 13.56 MHz carrier frequency and is made fully differential in order to remove the parasitic phase modulation components. The accompanying transmitter logic includes lookup tables with programmable modulation pulse wave shapes. The modulator solution uses a 64-cell tapped current controlled fully differential delay locked loop (DLL), which produces a 360° delay at 54.24 MHz, and a glitch-free multiplexor to select the individual taps. The outphased output from the modulator is mixed to create an RF pulse width modulated (PWM) output, which drives the antenna. Additionally, this implementation is fully compatible with D-class amplifiers enabling high efficiency. A test circuit of the proposed differential multi-standard reader’s transmitter was simulated in 40 nm CMOS technology. Stricter pulse shape requirements were easily satisfied, while achieving an output linearity of 0.2 bits and maximum power consumption under 7.5 mW.

scholarly journals A 60 GHz fully differential LNA in 90 nm CMOS technology

2013 ◽  
Vol 6 (2) ◽  
pp. 109-113 ◽  
Author(s):  
Andrea Malignaggi ◽  
Amin Hamidian ◽  
Georg Boeck
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Transmission Lines ◽  
Noise Figure ◽  
Design Procedure ◽  
Cmos Technology ◽  
High Gain ◽  
Low Noise ◽  
60 Ghz ◽  
Fully Differential

The present paper presents a fully differential 60 GHz four stages low-noise amplifier for wireless applications. The amplifier has been optimized for low-noise, high-gain, and low-power consumption, and implemented in a 90 nm low-power CMOS technology. Matching and common-mode rejection networks have been realized using shielded coplanar transmission lines. The amplifier achieves a peak small-signal gain of 21.3 dB and an average noise figure of 5.4 dB along with power consumption of 30 mW and occupying only 0.38 mm2pads included. The detailed design procedure and the achieved measurement results are presented in this work.

scholarly journals RF Transimpedance Amplifier for CATV Applications over PON

2017 ◽  
Vol 5 ◽  
Author(s):  
Guillermo Royo ◽  
Carlos Sánchez-Azqueta ◽  
Concepción Aldea ◽  
Santiago Celma
Keyword(s):  
Communication Systems ◽  
Gain Control ◽  
Cmos Technology ◽  
Transimpedance Amplifier ◽  
Control Range ◽  
Fully Differential ◽  
Rf Signals ◽  
Input Range ◽  
Transimpedance Gain

In this work, we present a fully differential transimpedance amplifier (TIA) with controllable transimpedance for use in RF overlay downstream communication systems. The transimpedance amplifier has been designed in a standard 180-nm CMOS technology and it is intended for 47 MHz to 870 MHz subcarrier multiplexed RF signals. It performs a 18 dBΩ transimpedance gain control range for extended optical input range from -6 dBm up to +2 dBm.

Fully Differential Class-AB OTA with Improved CMRR

2017 ◽  
Vol 26 (11) ◽  
pp. 1750169 ◽  
Author(s):  
Francesco Centurelli ◽  
Pietro Monsurrò ◽  
Gaetano Parisi ◽  
Pasquale Tommasino ◽  
Alessandro Trifiletti
Keyword(s):  
Cmos Technology ◽  
Current Mirror ◽  
Differential Mode ◽  
Common Mode ◽  
Common Mode Rejection Ratio ◽  
Class Ab ◽  
Fully Differential ◽  
Rejection Ratio ◽  
Mode Behavior ◽  
The Common

This paper presents a fully differential class-AB current mirror OTA that improves the common-mode behavior of a topology that presents very good differential-mode performance but poor common-mode rejection ratio (CMRR). The proposed solution requires a low-current auxiliary circuit driven by the input signal, to compensate the effect of the common-mode input component. Simulations in 40-nm CMOS technology show a net reduction of common-mode gain of more than 90[Formula: see text]dB without affecting the differential-mode behavior; a sample-and-hold amplifier exploiting the proposed amplifier has also been simulated.

THE DIFFERENTIAL DIFFERENCE OPERATIONAL FLOATING AMPLIFIER: NEW CMOS REALIZATIONS AND APPLICATIONS

2009 ◽  
Vol 18 (07) ◽  
pp. 1287-1308 ◽  
Author(s):  
EMAN A. SOLIMAN ◽  
SOLIMAN A. MAHMOUD
Keyword(s):  
Analog Circuits ◽  
Cmos Technology ◽  
Pass Filter ◽  
Low Pass Filter ◽  
Variable Gain Amplifiers ◽  
Variable Gain ◽  
Fully Differential ◽  
Filter Performance ◽  
Low Pass ◽  
Band Pass

This paper presents different novel CMOS realizations for the differential difference operational floating amplifier (DDOFA). The DDOFA was first introduced in Ref. 1 and was used to realize different analog circuits like integrators, filters and variable gain amplifiers. New CMOS realizations for the DDOFA are introduced in this literature. Furthermore the DDOFA is modified to realize a fully differential current conveyor (FDCC). Novel CMOS realizations of the FDCC are presented. The FDCC is used to realize second-order band pass–low-pass filter. Performance comparisons between the different realizations of the DDOFA and FDCC are given in this literature. PSPICE simulations of the overall proposed circuits are given using 0.25 μm CMOS Technology from TMSC MOSIS model and dual supply voltages of ±1.5 V.

Design, Modeling and Simulation of CMOS-MEMS Piezoresistive Cantilever Based Carbon Dioxide Gas Sensor for Capnometry

2011 ◽  
Vol 403-408 ◽  
pp. 3769-3774 ◽  
Author(s):  
Asif Mirza ◽  
Nor Hisham Hamid ◽  
Mohd Haris Md Khir ◽  
Khalid Ashraf ◽  
M.T. Jan ◽  
...  
Keyword(s):  
Carbon Dioxide ◽  
Modeling And Simulation ◽  
Low Cost ◽  
Cmos Technology ◽  
Simulation Software ◽  
Dynamic Mode ◽  
Fully Differential ◽  
Carbon Dioxide Gas ◽  
Carbon Dioxide Co2 ◽  
Relative Change

This paper reports design, modeling and simulation of MEMS based sensor working in dynamic mode with fully differential piezoresistive sensing for monitoring the concentration of exhaled carbon dioxide (CO2) gas in human breath called capnometer. CO2 being a very important biomarker, it is desirable to extend the scope of its monitoring beyond clinical use to home and ambulatory services. Currently the scope of capnometers and its adaption is limited by high cost, large size and high power consumption of conventional capnometers . In recent years, MEMS based micro resonant sensors have received considerable attention due to their potential as a platform for the development of many novel physical, chemical, and biological sensors with small size, low cost and low power requirements. The sensor is designed using 0.35 micron CMOS technology. CoventorWare and MATLAB have been used as simulation software. According to the developed model and simulation results the resonator has resonant frequency 57393 Hz and mass sensitivity of 3.2 Hz/ng. The results show that the longitudinal relative change of resistance is 0.24%/µm while the transverse relative change of resistance is -0.03%/µm.

scholarly journals A Sub-mW 18-MHz MEMS Oscillator Based on a 98-dBΩ Adjustable Bandwidth Transimpedance Amplifier and a Lamé-Mode Resonator

Sensors ◽  
2019 ◽  
Vol 19 (12) ◽  
pp. 2680
Author(s):  
Anoir Bouchami ◽  
Mohannad Y. Elsayed ◽  
Frederic Nabki
Keyword(s):  
Phase Noise ◽  
Cmos Technology ◽  
High Gain ◽  
Transimpedance Amplifier ◽  
Short Term ◽  
Microelectromechanical System ◽  
Fully Differential ◽  
Mems Oscillator ◽  
Measured Input ◽  
Mode Resonator

This paper presents a microelectromechanical system (MEMS)-based oscillator based on a Lamé-mode capacitive micromachined resonator and a fully differential high-gain transimpedance amplifier (TIA). The proposed TIA is designed using TSMC 65 nm CMOS technology and consumes only 0.9 mA from a 1-V supply. The measured mid-band transimpedance gain is 98 dB Ω and the TIA features an adjustable bandwidth with a maximum bandwidth of 142 MHz for a parasitic capacitance C P of 4 pF. The measured input-referred current noise of the TIA at mid-band is below 15 pA/ Hz . The TIA is connected to a Lamé-mode resonator, and the oscillator performance in terms of phase noise and frequency stability is presented. The measured phase noise under vacuum is −120 dBc/Hz at a 1-kHz offset, while the phase noise floor reaches −127 dBc/Hz. The measured short-term stability of the MEMS-based oscillator is ±0.25 ppm.

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