scholarly journals Influence of different types of solvents on morphology, optical and conductive properties of PCBM films

2021 ◽  
Vol 13 (4) ◽  
pp. 465-470
Author(s):  
Olga A. Krokhina ◽  
◽  
Nikita E. Podolsky ◽  
Andrey S. Tyutyunik ◽  
Vladimir S. Gurchenko ◽  
...  
Keyword(s):  
Spectral Characteristics ◽  
Film Surface ◽  
Carbon Films ◽  
Optical Range ◽  
Frequency Range ◽  
Current Voltage ◽  
Different Types ◽  
Current Voltage Characteristics ◽  
Conductive Properties ◽  
Methyl Phenyl

The article deals with the influence of various types of solvents on the spectral characteristics and conductive properties of films [6,6]-methyl phenyl-C61-butyric acid, precipitated from solutions. It is clearly shown that the effect of the nature of the solvent affects the morphology of the film surface. Analysis of the spectra of the optical range showed the presence of a maximum of the absorption coefficient in the frequency range of 340-490 nm. The calculation of the optical bandgap clearly demonstrates the possibility of modernizing the atomic structure of films by using various types of solvents. A study of the current-voltage characteristics showed the presence of a photocurrent in carbon films deposited with dichloromethane, toluene, and chloroform.

The Interaction of Carbon with the Diamond Surface: A Photoelectron Spectroscopy Study

1997 ◽  
Vol 498 ◽  
Author(s):  
P. Reinke ◽  
T. Wrase ◽  
K. Müller ◽  
P. Oelhafen ◽  
R. Locher
Keyword(s):  
Photoelectron Spectroscopy ◽  
Carbon Film ◽  
Polycrystalline Diamond ◽  
Carbon Films ◽  
Electron Beam Evaporation ◽  
Diamond Surface ◽  
Field Emission Current ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Reconstructed Surface

ABSTRACTThe modification of the diamond surface through adsorbants offers the opportunity to adjust the electronic and electron emission properties of the surface. In the study presented here, we deposited between 0.1 and 100 monolayers of carbon from an electron beam evaporation source on polycrystalline diamond films. Photoelectron spectroscopy in the ultraviolet and X-ray regime was employed to characterize the surface. Observations on a (100) polycrystalline diamond film show, that the surface is first depleted of hydrogen and subsequent growth of an amorphous carbon film (a-C) occurs on the reconstructed surface. The deposition of these ultrathin carbon films allows the controlled introduction of sp2carbon and p-π states onto the diamond surface. The field emission current increases considerably with the amount of sp2-carbon accumulated at the diamond surface. The current-voltage characteristics only partially follow the Fowler-Nordheim equation, and the results obtained for different films are described and possible emission mechanism discussed.

Pulsed electrodeposition of diamond-like carbon films

1997 ◽  
Vol 12 (11) ◽  
pp. 3102-3105 ◽  
Author(s):  
Hao Wang ◽  
Ming-Rong Shen ◽  
Zhao-Yuan Ning ◽  
Chao Ye ◽  
He-Sun Zhu
Keyword(s):  
Raman Spectroscopy ◽  
Carbon Films ◽  
Methanol Solution ◽  
Breakdown Field ◽  
Diamond Like Carbon ◽  
Current Voltage ◽  
Chemical Inertness ◽  
Current Voltage Characteristics ◽  
Pulsed Electrodeposition ◽  
Hardness Values

Diamond-like carbon (DLC) films have been prepared by electrolysis of methanol solution using a pulse-modulated source. The deposition rate of the films is enhanced significantly compared to that of dc value. That the films do not contain bonded hydrogen is confirmed by infrared spectra. The structures of the films are characterized by Raman spectroscopy. These films show chemical inertness and hardness values in the range 12.5–19 GPa. Current-voltage characteristics of the films are measured, indicating that the resistivity is in the 107 Ω cm range and the breakdown field is larger than 1 MV cm−1.

Comparisons and analyses on heterostructures consisting of ZnO and different ferroelectric films

2011 ◽  
Vol 1368 ◽  
Author(s):  
Nai-wen ZHANG ◽  
Ze JIA ◽  
Ming-ming ZHANG ◽  
Tian-ling REN
Keyword(s):  
Remnant Polarization ◽  
Sol Gel ◽  
Semiconductor Heterostructures ◽  
Ferroelectric Films ◽  
Channel Resistance ◽  
Current Voltage ◽  
Sol Gel Process ◽  
Different Types ◽  
Current Voltage Characteristics

ABSTRACTTwo different types of ferroelectric/semiconductor heterostructures, made up of Pb(Zr,Ti)O3/ZnO and BiFeO3/ZnO respectively, were fabricated on Pt(111)/Ti/SiO2/Si(100) by sol-gel process. Obvious diodelike behavior were observed in BiFeO3/ZnO heterostructures when current-voltage characteristics were measured, while Pb(Zr,Ti)O3/ZnO heterostructures exhibited a symmetrical behavior. It is found that Pb(Zr,Ti)O3/ZnO heterostructures showed a large polarization and the remnant polarization was approximately 15μC/cm2. The remnant polarization performed a modulation on the channel resistance. The different properties of two heterostructures might lead to different applications.

Electroluminescence from single crystal Cu2O diodes

1979 ◽  
Vol 57 (7) ◽  
pp. 988-993 ◽  
Author(s):  
K. T. Chee ◽  
T. Keowsim ◽  
F. L. Weichman
Keyword(s):  
Single Crystal ◽  
Single Injection ◽  
Forward Bias ◽  
The Other ◽  
Double Injection ◽  
Injection Process ◽  
Current Voltage ◽  
Different Types ◽  
Current Voltage Characteristics ◽  
Transient Electroluminescence

We have measured the infrared electroluminescence in different types of single crystal Cu2O–Cu diodes under forward bias at various temperatures. Diodes which showed double-injection current-voltage characteristics in previous studies showed transient electroluminescence response at low currents and dc response at higher currents. On the other hand, diodes that showed the characteristics of single injection in previous studies showed transient electroluminescence response only. We have related the present studies on electroluminescence with the previous findings. Furthermore the present studies also revealed some information on the injection process. We have also discussed the differences and similarities between electroluminescence and photoluminescence of Cu2O.

scholarly journals EFFECT OF CARBON NANOTUBES ON THE ELECTRICAL PROPERTIES OF THE POLYMERIC COMPOSITES

2019 ◽  
Vol 3 ◽  
pp. 45
Author(s):  
Sergey Gango ◽  
Konstantin Gusev ◽  
Evgeniy Ilin ◽  
Mikhail Predtechensky ◽  
Vladimir Solovyev ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Electrical Conductivity ◽  
Experimental Study ◽  
Electrical Properties ◽  
Polymeric Composite ◽  
Frequency Range ◽  
Ac Electrical Conductivity ◽  
Current Voltage ◽  
Temperature Dependences ◽  
Current Voltage Characteristics

Experimental study of single-wall carbon nabotubes (CNT) effect on the electrical properties of polymeric composite materials based on epoxy matrix has been carried out. Direct-current (DC) as well as alternating-current (AC) electrical conductivity of nanocomposites with different CNT concentrations have been investigated in the temperature interval from 293 K to 373 K. Measurements of Seebeck coefficient confirm n-type conductivity of composite with CNTs. Percolation threshold of the composite material under study has been estimated. It has been found that addition of single-wall CNT at low concentration causes hysteresis of current-voltage characteristics and the temperature dependences of electrical conductivity as well as its anisotropy in the samples under study. No noticeable frequency dependence of the AC electrical conductivity has been found in the frequency range from 100 Hz to 300 kHz.

Graphitic Schottky Contacts to Si formed by Energetic Deposition

2015 ◽  
Vol 1786 ◽  
pp. 51-56 ◽  
Author(s):  
Mohammad Saleh N Alnassar ◽  
Patrick W. Leech ◽  
Geoff K. Reeves ◽  
Anthony S. Holland ◽  
Desmond W. M. Lau ◽  
...  
Keyword(s):  
Schottky Diodes ◽  
Carbon Films ◽  
Schottky Contacts ◽  
Vacuum Arc ◽  
Substrate Bias ◽  
Effective Work ◽  
Effective Work Function ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Filtered Cathodic Vacuum Arc

ABSTRACTCarbon films deposited by filtered cathodic vacuum arc have been used to form high quality Schottky diodes on p-Si. Energetic deposition with an applied substrate bias of -1 kV and with a substrate temperature of 100 °C has produced carbon diodes with rectification ratios of ∼ 3 × 106, saturation currents of ∼0.02 nA and ideality factors close to unity (n = 1.05). Simulations were used to estimate the effective work function and the thickness of an interfacial mixed (C/SiO2) layer from the current/voltage characteristics of the diodes.

scholarly journals Влияние влажности окружающей среды на электрическую проводимость полиморфных Ga-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=--структур

2021 ◽  
Vol 55 (3) ◽  
pp. 269
Author(s):  
А.В. Алмаев ◽  
В.И. Николаев ◽  
С.И. Степанов ◽  
Н.Н. Яковлев ◽  
А.И. Печников ◽  
...  
Keyword(s):  
Water Vapor ◽  
Relative Humidity ◽  
Vapor Phase ◽  
High Sensitivity ◽  
Atmospheric Humidity ◽  
Sapphire Substrates ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Increasing Temperature ◽  
Conductive Properties

The effect of ambient humidity on the electrical conductive properties of α-Ga2O3 and α-Ga2O3/ε-Ga2O3 structures has been studied. Polymorphic Ga2O3 epitaxial layers were deposited by chloride vapor phase epitaxy on sapphire substrates. Pt and Pt/Ti were used as contacts. It was found that the Pt/α-Ga2O3/Pt and Pt/Ti/α-Ga2O3/ε-Ga2O3/Ti/Pt structures exhibit a high sensitivity of the current – voltage characteristics (I–V characteristics) to atmospheric humidity in the temperature range 25–100 °C. It was found that the effect of water vapor on the I–V characteristics of the structures is reversible and the most significant changes in the current in the samples are observed at a relative humidity RH ≥ 60%. With increasing temperature the effect of atmospheric humidity on the I–V characteristics decreases and disappears at T > 100 °C. The experimental results obtained are explained in terms of the Grottguss mechanism.

Performance InGaN and AlGaInP LED Characteristic Dependence on Quantum Wells

2014 ◽  
Vol 1070-1072 ◽  
pp. 600-603 ◽  
Author(s):  
Oleg Rabinovich ◽  
Sergey Didenko ◽  
Sergey Legotin
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
Spectral Characteristics ◽  
Optimal Structure ◽  
Inhomogeneous Distribution ◽  
Light Emitting ◽  
Current Voltage ◽  
Current Voltage Characteristics

The simulation of multicomponent nanoheterostructures (MNH) InGaN for light-emitting diodes (LEDs) was made. The results are presented in graphs, for example, the current-voltage characteristics, the dependence of the internal quantum efficiency (IQE) on the number of quantum wells (QW) and spectral characteristics. The optimal structure of the MNH and the influence of the inhomogeneous distribution of In atoms in the quantum-well region is investigated.

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