scholarly journals Effects of γ-irradiation on electrical characteristics of power vdmos transistors

2002 ◽  
Vol 2 (4) ◽  
pp. 223-233 ◽  
Author(s):  
Z. Pavlovic ◽  
Ivica Manic ◽  
Snezana Golubovic
Keyword(s):  
Experimental Data ◽  
Absorbed Dose ◽  
Drain Current ◽  
Gate Oxide ◽  
Effective Density ◽  
Analytical Relation ◽  
Model Parameters ◽  
Electrical Characteristics ◽  
Irradiation Effects ◽  
Γ Irradiation

In this paper we present the results of both experimental investigation and analytical modelling of ?-irradiation effects on basic electrical characteristics of power VDMOS transistors. First, an analytical model that yields the drain current and transconductance dependencies on gate oxide charge density is developed. The experimental data are utilized to establish an analytical relation between the absorbed dose of ?-irradiation and corresponding effective density of gate oxide charges, as well as to extract the values of model parameters. Drain current and transconductance of VDMOS devices are then modelled as the functions of irradiation dose. Finally, the results of modelling are compared with experimental data.

Change in Characteristics of SiC MOSFETs by Gamma-Ray Irradiation at High Temperature

2016 ◽  
Vol 858 ◽  
pp. 860-863 ◽  
Author(s):  
Takuma Matsuda ◽  
Takashi Yokoseki ◽  
Satoshi Mitomo ◽  
Koichi Murata ◽  
Takahiro Makino ◽  
...  
Keyword(s):  
Field Effect ◽  
Gamma Ray ◽  
Field Effect Transistors ◽  
Absorbed Dose ◽  
Drain Current ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Radiation Response ◽  
Electrical Characteristics ◽  
Gamma Ray Irradiation

Radiation response of 4H-SiC vertical power Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) was investigated at 150°C up to 10.4 MGy. Until irradiation at 1.2 MGy, the drain current – gate voltage curves of the SiC MOSFETs shifted to the negative voltage side, and the leakage of drain current at gate voltages below threshold voltage increased with increasing absorbed dose. However, no significant change in the electrical characteristics of SiC MOSFETs was observed at doses above 1.2 MGy. For blocking characteristics, there were no degradations of the SiC MOSFETs irradiated at 150°C even after irradiated at 10.4 MGy.

Comparison of the Threshold-Voltage Stability of SiC MOSFETs with Thermally Grown and Deposited Gate Oxides

2010 ◽  
Vol 645-648 ◽  
pp. 681-684 ◽  
Author(s):  
Michael Grieb ◽  
Masato Noborio ◽  
Dethard Peters ◽  
Anton J. Bauer ◽  
Peter Friedrichs ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Room Temperature ◽  
Drain Current ◽  
Gate Oxide ◽  
Electrical Characteristics ◽  
Gate Oxides ◽  
Operation Conditions ◽  
Mos Devices ◽  
Thermal Oxide ◽  
Order Of Magnitude

The electrical characteristics and the reliability of different oxides on the 4H-SiC Si-face for gate oxide application in MOS devices are compared under MOSFET operation conditions at room temperature, at 100°C and at 130°C. The oxides are either an 80nm thick deposited oxide annealed in NO or an 80nm thick grown oxide in diluted N2O. The deposited oxide shows significant higher QBD- and lower Dit-values as well as a stronger decrease of drain current under stress than the grown oxide. Although for the deposited oxide, the leakage current below subthreshold increases more than one order of magnitude during constant circuit stress at room temperature, for the thermal oxide it is quite constant, but at higher level for higher temperatures.

Gamma-Ray Irradiation Effects on the Electrical Characteristics of 6H-SiC MOSFETs with Annealed Gate-Oxide

2002 ◽  
Vol 389-393 ◽  
pp. 1093-1096 ◽  
Author(s):  
Takeshi Ohshima ◽  
Kin Kiong Lee ◽  
Akihiko Ohi ◽  
Masahito Yoshikawa ◽  
Hisayoshi Itoh
Keyword(s):  
Gamma Ray ◽  
Gate Oxide ◽  
Electrical Characteristics ◽  
Irradiation Effects ◽  
Gamma Ray Irradiation

scholarly journals Effect of Chirality and Oxide Thikness on the Performance of a Ballistic CNTFET

2018 ◽  
Vol 8 (6) ◽  
pp. 4941
Author(s):  
Asma Laribi ◽  
Ahlam Guen Bouazza
Keyword(s):  
Carbon Nanotube ◽  
Potential Model ◽  
Drain Current ◽  
Gate Oxide ◽  
Oxide Thickness ◽  
Electrical Characteristics ◽  
Promising Candidate ◽  
Gate Oxide Thickness ◽  
Effect Transistor ◽  
The Impact

<p>Since the discovery of 1D nano-object, they are constantly revealing significant physical properties. In this regard, carbon nanotube (CNT) is considered as a promising candidate for application in future nanoelectronics devices like carbon nanotube field effect transistor (CNTFET). In this work, the impact of chirality and gate oxide thikness on the electrical characteristics of a CNTFET are studied. The chiralities used are (5, 0), (10, 0), (19, 0), (26, 0), and the gate oxide thikness varied from 1 to 5 nm.This work is based on a numerical simulation program based on surface potential model. CNTFET Modeling is useful for semiconductor industries for nano scale devices manufacturing. From our results we have observed that the output current increases with chirality increasing.We have also highlight the importance of the gate oxide thickness on the drain current that increases when gate oxide is thin.</p>

Parameter Determination for Chloride and Tritium Transport in Undisturbed Lysimeters during Steady Flow

1992 ◽  
Vol 23 (2) ◽  
pp. 89-104 ◽  
Author(s):  
Ole H. Jacobsen ◽  
Feike J. Leij ◽  
Martinus Th. van Genuchten
Keyword(s):  
Experimental Data ◽  
Unsaturated Flow ◽  
Transport Model ◽  
Time Moment ◽  
Breakthrough Curves ◽  
Coarse Sand ◽  
Retardation Factor ◽  
Parameter Determination ◽  
Model Parameters ◽  
Water Fraction

Breakthrough curves of Cl and 3H2O were obtained during steady unsaturated flow in five lysimeters containing an undisturbed coarse sand (Orthic Haplohumod). The experimental data were analyzed in terms of the classical two-parameter convection-dispersion equation and a four-parameter two-region type physical nonequilibrium solute transport model. Model parameters were obtained by both curve fitting and time moment analysis. The four-parameter model provided a much better fit to the data for three soil columns, but performed only slightly better for the two remaining columns. The retardation factor for Cl was about 10 % less than for 3H2O, indicating some anion exclusion. For the four-parameter model the average immobile water fraction was 0.14 and the Peclet numbers of the mobile region varied between 50 and 200. Time moments analysis proved to be a useful tool for quantifying the break through curve (BTC) although the moments were found to be sensitive to experimental scattering in the measured data at larger times. Also, fitted parameters described the experimental data better than moment generated parameter values.

Effect of ionizing radiation on the kinetics of hydrogenation on the Ni-MgO mixed catalyst

1982 ◽  
Vol 47 (7) ◽  
pp. 1780-1786 ◽  
Author(s):  
Rostislav Kudláček ◽  
Jan Lokoč
Keyword(s):  
Experimental Data ◽  
Activation Energy ◽  
Liquid Phase ◽  
Ionizing Radiation ◽  
Oxide Catalyst ◽  
Absorbed Dose ◽  
Hydrogenation Rate ◽  
Solution Composition ◽  
Mixed Catalyst ◽  
Kinetics Of

The effect of gamma pre-irradiation of the mixed nickel-magnesium oxide catalyst on the kinetics of hydrogenation of maleic acid in the liquid phase has been studied. The changes of the hydrogenation rate are compared with the changes of the adsorbed amount of the acid and with the changes of the solution composition, activation energy, and absorbed dose of the ionizing radiation. From this comparison and from the interpretation of the experimental data it can be deduced that two types of centers can be distinguished on the surface of the catalyst under study, namely the sorption centres for the acid and hydrogen and the reaction centres.

Exploration of heavy ion irradiation effects on gate oxide reliability in power MOSFETs

1995 ◽  
Vol 35 (3) ◽  
pp. 603-608 ◽  
Author(s):  
S.R. Anderson ◽  
R.D. Schrimpf ◽  
K.F. Galloway ◽  
J.L. Titus
Keyword(s):  
Ion Irradiation ◽  
Gate Oxide ◽  
Heavy Ion ◽  
Irradiation Effects ◽  
Power Mosfets ◽  
Heavy Ion Irradiation ◽  
Oxide Reliability

scholarly journals Modelling the Inflation and Elastic Instabilities of Rubber-Like Spherical and Cylindrical Shells Using a New Generalised Neo-Hookean Strain Energy Function

2021 ◽  
Author(s):  
Afshin Anssari-Benam ◽  
Andrea Bucchi ◽  
Giuseppe Saccomandi
Keyword(s):  
Experimental Data ◽  
Energy Function ◽  
Limit Point ◽  
Strain Energy ◽  
Cylindrical Shells ◽  
Strain Energy Function ◽  
Model Parameters ◽  
Wide Range ◽  
Cylindrical Tubes ◽  
Gent Model

AbstractThe application of a newly proposed generalised neo-Hookean strain energy function to the inflation of incompressible rubber-like spherical and cylindrical shells is demonstrated in this paper. The pressure ($P$ P ) – inflation ($\lambda $ λ or $v$ v ) relationships are derived and presented for four shells: thin- and thick-walled spherical balloons, and thin- and thick-walled cylindrical tubes. Characteristics of the inflation curves predicted by the model for the four considered shells are analysed and the critical values of the model parameters for exhibiting the limit-point instability are established. The application of the model to extant experimental datasets procured from studies across 19th to 21st century will be demonstrated, showing favourable agreement between the model and the experimental data. The capability of the model to capture the two characteristic instability phenomena in the inflation of rubber-like materials, namely the limit-point and inflation-jump instabilities, will be made evident from both the theoretical analysis and curve-fitting approaches presented in this study. A comparison with the predictions of the Gent model for the considered data is also demonstrated and is shown that our presented model provides improved fits. Given the simplicity of the model, its ability to fit a wide range of experimental data and capture both limit-point and inflation-jump instabilities, we propose the application of our model to the inflation of rubber-like materials.

A Theoretical Analysis of CO2 Absorption in Sun Versus Shade Leaves

1978 ◽  
Vol 100 (1) ◽  
pp. 20-24 ◽  
Author(s):  
R. H. Rand
Keyword(s):  
Experimental Data ◽  
Quantitative Estimate ◽  
Geometric Model ◽  
Model Parameters ◽  
Co2 Absorption ◽  
Temperature Model ◽  
Spongy Mesophyll ◽  
One Dimensional ◽  
Mesophyll Tissue ◽  
Shade Leaves

A one-dimensional, steady-state, constant temperature model of diffusion and absorption of CO2 in the intercellular air spaces of a leaf is presented. The model includes two geometrically distinct regions of the leaf interior, corresponding to palisade and spongy mesophyll tissue, respectively. Sun, shade, and intermediate light leaves are modeled by varying the thicknesses of these two regions. Values of the geometric model parameters are obtained by comparing geometric properties of the model with experimental data of other investigators found from dissection of real leaves. The model provides a quantitative estimate of the extent to which the concentration of gaseous CO2 varies locally within the leaf interior.

A Novel Multi-Channel Poly-Si TFT Improving Hydrogen Passivation

1997 ◽  
Vol 471 ◽  
Author(s):  
C. M. Park ◽  
J.-H. Jeon ◽  
J.-S. Yoo ◽  
M.-K. Han
Keyword(s):  
Polycrystalline Silicon ◽  
Thin Film Transistor ◽  
Gate Oxide ◽  
Electrical Characteristics ◽  
Field Effect Mobility ◽  
Silicon Thin Film ◽  
New Device ◽  
Hydrogen Radicals ◽  
Long Channel ◽  
Conventional Device

ABSTARCT:We have fabricated a new multi-channel polycrystalline silicon thin film transistor (ploy-Si TFT), of which structure may be more effectively hydrogenated than conventional multi-channel poly-Si TFT. The new multi-channel TFT has stripe-cuts in gate electrode so that more hydrogen radicals penetrate into the gate oxide and passivate the active poly-Si layer. After 90 min. hydrogenation of the new device, the electrical characteristics such as threshold voltage and field effect mobility are improved more than those of conventional device.The new multi-channel poly-Si TFT, which receives more hydrogen radicals thorough gate oxide than the conventional multi-channel TFT, can be hydrogenated effectively in long channel devices. Besides the improvement of the device characteristics, our experimental results show that the dominant hydrogenation path is the diffusion though the gate oxide.

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