Materials Analysis and Process Monitoring in MegaFabs

2002 ◽  
Author(s):  
Bryan Tracy
Keyword(s):  
Process Development ◽  
Turnaround Time ◽  
Generation Process ◽  
Concurrent Process ◽  
Materials Analysis ◽  
Look Ahead ◽  
Analysis Laboratory ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes

Abstract The essential role of the material analysis laboratory in modern IC production is confirmed by the scale of the investment made in such facilities. The laboratories are part of the initial design of the fab and are well staffed and superbly well equipped. There are many factors which drive this investment, but perhaps the most compelling is the realization that the materials analysis lab is required to support early fab start-up, support production needs, and to pursue process development. During this talk, examples of each of these functions will be presented. The metrology of IC production is highly varied, and the implementation of this metrology varies widely company-to-company and even within any given company. The balance of in-fab vs out-offab measurements is of considerable importance and will be discussed in detail during this talk. Pertinent examples of contamination analysis and defect review will be presented. Looking ahead to 100 and 70nm nodes, the imaging requirements are daunting and will require scanning electron microscopes with astoundingly high resolution. Remembering that the physical gate length in a modern microprocessor is approximately one half the technology node size, it is clear that imaging 35nm transistors at 500KX will be required. Examples of state-of-the-art SEM, TEM and STEM will be presented as a "look-ahead" into the imaging requirements of the sub 100nm technology generations. The introduction of exotic materials such as high and low K oxides and ultra-thin barriers present special challenges and will spur a lively debate as to which measurements are needed, which measurements can/should be taken in the fab, and, of course, the turnaround time and cost? The rush to early process transfer and early production has given rise to the concept of "concurrent process development and transfer", where the new process flow is transferred to the megafab, almost in its infancy. In this case, the role of the materials analysis lab is expanded to directly aid "next generation" process development. As can be seen from the discussion above, the importance and linkage between Materials Analysis and IC process control has never been greater.

The sensory receptors of the carrot fly larva, Psila rosae (F.) (Dipt., Psilidae)

1973 ◽  
Vol 62 (4) ◽  
pp. 545-548 ◽  
Author(s):  
M. F. Ryan ◽  
M. Behan
Keyword(s):  
Root Hairs ◽  
Sensory Receptors ◽  
Campaniform Sensilla ◽  
Psila Rosae ◽  
Basiconic Sensilla ◽  
Carrot Fly ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes ◽  
Scanning Electron

Examination of the cephalic lobes of larvae of Psila rosae (F.) by means of light and scanning electron microscopes revealed the presence of 24 sensilla, ten campaniform, eight basiconic, four ampullaceous and two styloconic. By comparison with the known functions of similar sensilla in other insects, it is suggested that the ampullaceous and basiconic sensilla respond to plant emanations in soil, air and water, respectively, and that styloconic sensilla determine the palatability of the root hairs; the role of the campaniform sensilla is obscure.

Defect Review at 0.25 Micron Electron Optic Requirements and Practical Examples

1997 ◽  
Vol 3 (S2) ◽  
pp. 447-448
Author(s):  
Bryan Tracy
Keyword(s):  
Process Development ◽  
Stable Process ◽  
Defect Inspection ◽  
Process Technology ◽  
Feature Size ◽  
Modern Development ◽  
Multiple Defect ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes

The sub-micron era in 1C process technology has been characterized by ever shrinking device geometries. When the minimum feature size of 0.5 micron was reached, a significant inflection in the usefulness of optical microscopy occurred. Seemingly routine Fab activities such as the use of the optical microscopes to determine the quality of the metal etch were no longer possible. At the same time, an increased use of defect inspection tools such as KLA and Tencor was required to insure stable process quality. These and other factors combined to hasten the introduction of multiple defect review scanning electron microscopes into the modern 1C Fab. This trend has accelerated during the process development of 0.25 micron technology. Accordingly, as leading 1C manufactures introduce production 0.25 devices, it is not unusual to find as many as six such instruments installed in a modern development or fabrication facility. As such, these instruments, commonly called Defect Review Tools (DRT's) constitute an increasing share of the Fab equipment set.

MICROSCOPIC TRIBOLOGICAL ANALYSIS OF THE KNEE JOINT

Tribologia ◽  
2018 ◽  
Vol 273 (3) ◽  
pp. 147-154
Author(s):  
Anna M. RYNIEWICZ ◽  
Andrzej RYNIEWICZ ◽  
Anna PUKALUK ◽  
Paweł PAŁKA
Keyword(s):  
Articular Cartilage ◽  
Synovial Fluid ◽  
Knee Joint ◽  
Superficial Layer ◽  
Ground Substance ◽  
Atomic Force ◽  
Electron Microscopes ◽  
Tribological Analysis ◽  
Scanning Electron Microscopes

The aim of the conducted research was the evaluation of the topography and the structure of the superficial layer of meniscus and articular cartilage. These are surfaces that optimise the friction and lubrication process in the knee joint. The animal samples of the menisci and the articular cartilage were examined. The research was performed using scanning electron microscopes and an atomic force microscope. The structure of the surface of meniscus and articular cartilage is very regular. The collagenous fibres, which are embedded in the ground substance, are parallel to the surface. The undulation of the surface was observed. In the area of the anterior horn on tibia side of both menisci as well as in the anterior area of tibial plateau, the concavity and convexity pattern is evident. The observed cavities enable the accumulation of the synovial fluid. The synovial fluid plays the role of the lubricant in the knee joint, and its presence is highly desired during the load transmission.

scholarly journals Online Microscopy Lab Training Modules in an Academic Environment

2008 ◽  
Vol 16 (5) ◽  
pp. 44-47
Author(s):  
K. Schierbeek ◽  
A. Mikel ◽  
S. E. Hill ◽  
O. P. Mills
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
X Ray ◽  
Transmission Electron ◽  
Analysis Laboratory ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes ◽  
Fluorescence Spectrometer ◽  
Training Modules ◽  
Operation Cost

The Applied Chemical and Morphological Analysis Laboratory (ACMAL) is a multi-user, multi-disciplinary characterization laboratory. ACMAL houses two scanning electron microscopes (SEM and FE-SEM), a transmission electron microscope (TEM), focused ion beam milling system (FIB), four X-ray diffractometers, and an X-ray fluorescence spectrometer. ACMAL operates as a recharge center where users absorb facility operation cost through an hourly use fee. As such, we are keenly interested in encouraging broad access to the facility by lowering obstacles to users. Facility training enhancements provide the best pathway to productive and responsible facility usage.

The study of interfacial reactions of nickel thin films on GaAs

1983 ◽  
Vol 41 ◽  
pp. 156-157
Author(s):  
L.J. Chen ◽  
Y.F. Hsieh
Keyword(s):  
Thin Films ◽  
Integrated Circuits ◽  
Interfacial Reactions ◽  
Metal Contacts ◽  
Nickel Thin Films ◽  
Thin Foils ◽  
The Status ◽  
Si Doped ◽  
Electron Microscopes

One measure of the maturity of a device technology is the ease and reliability of applying contact metallurgy. Compared to metal contact of silicon, the status of GaAs metallization is still at its primitive stage. With the advent of GaAs MESFET and integrated circuits, very stringent requirements were placed on their metal contacts. During the past few years, extensive researches have been conducted in the area of Au-Ge-Ni in order to lower contact resistances and improve uniformity. In this paper, we report the results of TEM study of interfacial reactions between Ni and GaAs as part of the attempt to understand the role of nickel in Au-Ge-Ni contact of GaAs.N-type, Si-doped, (001) oriented GaAs wafers, 15 mil in thickness, were grown by gradient-freeze method. Nickel thin films, 300Å in thickness, were e-gun deposited on GaAs wafers. The samples were then annealed in dry N2 in a 3-zone diffusion furnace at temperatures 200°C - 600°C for 5-180 minutes. Thin foils for TEM examinations were prepared by chemical polishing from the GaA.s side. TEM investigations were performed with JE0L- 100B and JE0L-200CX electron microscopes.

Toward High-Resolution Low-Voltage SEM

1988 ◽  
Vol 46 ◽  
pp. 218-219
Author(s):  
Zhifeng Shao
Keyword(s):  
Low Voltage ◽  
Spherical Aberration ◽  
Chromatic Aberration ◽  
Limiting Factor ◽  
Operating Voltage ◽  
Probe Radius ◽  
Non Local ◽  
Electron Microscopes ◽  
Image Position ◽  
Scanning Electron Microscopes

Recently, low voltage (≤5kV) scanning electron microscopes have become popular because of their unprecedented advantages, such as minimized charging effects and smaller specimen damage, etc. Perhaps the most important advantage of LVSEM is that they may be able to provide ultrahigh resolution since the interaction volume decreases when electron energy is reduced. It is obvious that no matter how low the operating voltage is, the resolution is always poorer than the probe radius. To achieve 10Å resolution at 5kV (including non-local effects), we would require a probe radius of 5∽6 Å. At low voltages, we can no longer ignore the effects of chromatic aberration because of the increased ratio δV/V. The 3rd order spherical aberration is another major limiting factor. The optimized aperture should be calculated as

Current State of Biological High-Resolution Scanning Electron Microscopy

1988 ◽  
Vol 46 ◽  
pp. 180-181 ◽  
Author(s):  
Klaus-Ruediger Peters
Keyword(s):  
High Performance ◽  
Low Voltage ◽  
Backscattered Electrons ◽  
Lens Position ◽  
Low Voltage Operation ◽  
Signal Collection ◽  
Probe Size ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes ◽  
Scanning Electron

A new generation of high performance field emission scanning electron microscopes (FSEM) is now commercially available (JEOL 890, Hitachi S 900, ISI OS 130-F) characterized by an "in lens" position of the specimen where probe diameters are reduced and signal collection improved. Additionally, low voltage operation is extended to 1 kV. Compared to the first generation of FSEM (JE0L JSM 30, Hitachi S 800), which utilized a specimen position below the final lens, specimen size had to be reduced but useful magnification could be impressively increased in both low (1-4 kV) and high (5-40 kV) voltage operation, i.e. from 50,000 to 200,000 and 250,000 to 1,000,000 x respectively.At high accelerating voltage and magnification, contrasts on biological specimens are well characterized1 and are produced by the entering probe electrons in the outmost surface layer within -vl nm depth. Backscattered electrons produce only a background signal. Under these conditions (FIG. 1) image quality is similar to conventional TEM (FIG. 2) and only limited at magnifications >1,000,000 x by probe size (0.5 nm) or non-localization effects (%0.5 nm).

Advanced TEM sample preparation techniques for submicron Si devices

1995 ◽  
Vol 53 ◽  
pp. 516-517 ◽  
Author(s):  
P. B. Basham ◽  
H. L. Tsai
Keyword(s):  
Sample Preparation ◽  
Process Development ◽  
Light Transmission ◽  
Specific Area ◽  
Turnaround Time ◽  
Small Hole ◽  
Area Of Interest ◽  
Transmission Electron ◽  
Polished Side ◽  
Preparation Techniques

The use of transmission electron microscopy (TEM) to support process development of advanced microelectronic devices is often challenged by a large amount of samples submitted from wafer fabrication areas and specific-spot analysis. Improving the TEM sample preparation techniques for a fast turnaround time is critical in order to provide a timely support for customers and improve the utilization of TEM. For the specific-area sample preparation, a technique which can be easily prepared with the least amount of effort is preferred. For these reasons, we have developed several techniques which have greatly facilitated the TEM sample preparation.For specific-area analysis, the use of a copper grid with a small hole is found to be very useful. With this small-hole grid technique, TEM sample preparation can be proceeded by well-established conventional methods. The sample is first polished to the area of interest, which is then carefully positioned inside the hole. This polished side is placed against the grid by epoxy Fig. 1 is an optical image of a TEM cross-section after dimpling to light transmission.

Chromatic aberration and low-voltage SEM

1987 ◽  
Vol 45 ◽  
pp. 546-547
Author(s):  
Zhifeng Shao ◽  
A.V. Crewe
Keyword(s):  
Electron Energy ◽  
Low Voltage ◽  
Spherical Aberration ◽  
Chromatic Aberration ◽  
Primary Electron ◽  
Probe Size ◽  
Non Local ◽  
Optical Treatment ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes

For scanning electron microscopes, it is plausible that by lowering the primary electron energy, one can decrease the volume of interaction and improve resolution. As shown by Crewe /1/, at V0 =5kV a 10Å resolution (including non-local effects) is possible. To achieve this, we would need a probe size about 5Å. However, at low voltages, the chromatic aberration becomes the major concern even for field emission sources. In this case, δV/V = 0.1 V/5kV = 2x10-5. As a rough estimate, it has been shown that /2/ the chromatic aberration δC should be less than ⅓ of δ0 the probe size determined by diffraction and spherical aberration in order to neglect its effect. But this did not take into account the distribution of electron energy. We will show that by using a wave optical treatment, the tolerance on the chromatic aberration is much larger than we expected.

High-resolution observation of sintered alumina (Al2O3) using the specimen-heated and electron-beam-induced conductivity method in a UHR-SEM

1994 ◽  
Vol 52 ◽  
pp. 1046-1047
Author(s):  
K. Ogura ◽  
T. Suzuki ◽  
C. Nielsen
Keyword(s):  
Electron Beam ◽  
High Resolution ◽  
Specimen Preparation ◽  
Conductivity Method ◽  
Fine Grain ◽  
Grain Structures ◽  
Resolution Observation ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes ◽  
Charging Effect

In spite of the complicated specimen preparation, Transmission Electron Microscopes (TEM) have traditionally been used for the investigation of the fine grain structures of sintered ceramics. Scanning Electron Microscopes (SEM) have not been used much for the same purpose as TEM because of poor results caused by the specimen charging effect, and also the lack of sufficient resolution. Here, we are presenting a successful result of high resolution imaging of sintered alumina (pure Al2O3) using the Specimen Heated and Electron Beam Induced Conductivity (SHEBIC) method, which we recently reported, in an ultrahigh resolution SEM (UHR-SEM). The JSM-6000F, equipped with a Field Emission Gun (FEG) and an in-lens specimen position, was used for this application.After sintered Al2O3 was sliced into a piece approximately 0.5 mm in thickness, one side was mechanically polished to get a shiny plane for the observation. When the observation was started at 20 kV, an enormous charging effect occured, and it was impossible to obtain a clear Secondary Electron (SE) image (Fig.1).

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