Beam-Based Localization Techniques for 0.18um IC Failure Analysis After Reliability Test

2002 ◽  
Author(s):  
Re-Long Chiu ◽  
Hui Zhang ◽  
Wen-Szu Chung ◽  
Mark Cherng ◽  
Xu Liu
Keyword(s):  
Sample Preparation ◽  
Contact Resistance ◽  
Failure Analysis ◽  
Gate Oxide ◽  
Reliability Test ◽  
Line Contact ◽  
Defect Site ◽  
Backscattered Electron ◽  
Voltage Contrast ◽  
Non Destructive

Abstract Locating the defect site in current devices is complicated by their density and size. Voltage contrast (VC) imaging and backscattered electron (BSE) imaging are non-destructive beam-based location techniques. We can locate the defect to single poly line, contact and via by combining EMMI, LC, layout and bit map address information. Some reliability failure analysis cases are presented to demonstrate the effectiveness of the beam-based techniques. VC imaging and BSE imaging are used to locate the defect site precisely. The subsequent steps include deprocess and precision FIB cut for sample preparation. SEM or TEM is then used to identify failures caused by gate oxide pinhole, contact junction leakage, high butted contact resistance or tungsten residue.

A Sample Preparation on Decapsulation Methodology for Effective Failure Analysis on Thin Small Leadless (TSLP) Flip Chip Package with Copper Pillar (CuP) Bump Interconnect Technology

2014 ◽  
Author(s):  
Gwee Hoon Yen ◽  
Ng Kiong Kay
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Flip Chip ◽  
Fault Localization ◽  
Cost Effective ◽  
Fault Isolation ◽  
Voltage Contrast ◽  
Interconnect Technology

Abstract Today, failure analysis involving flip chip [1] with copper pillar bump packaging technologies would be the major challenges faced by analysts. Most often, handling on the chips after destructive chemical decapsulation is extremely critical as there are several failure analysis steps to be continued such as chip level fault localization, chip micro probing for fault isolation, parallel lapping [2, 3, 4] and passive voltage contrast. Therefore, quality of sample preparation is critical. This paper discussed and demonstrated a quick, reliable and cost effective methodology to decapsulate the thin small leadless (TSLP) flip chip package with copper pillar (CuP) bump interconnect technology.

Solving the Voltage Contrast on Floating Substrate with Standard FA Toolset

2016 ◽  
Author(s):  
Julien Goxe ◽  
Béatrice Vanhuffel ◽  
Marie Castignolles ◽  
Thomas Zirilli
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Sample Preparation ◽  
Failure Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Silicon On Insulator ◽  
Mixed Signal ◽  
Voltage Contrast ◽  
Scanning Electron

Abstract Passive Voltage Contrast (PVC) in a Scanning Electron Microscope (SEM) or a Focused Ion Beam (FIB) is a key Failure Analysis (FA) technique to highlight a leaky gate. The introduction of Silicon On Insulator (SOI) substrate in our recent automotive analog mixed-signal technology highlighted a new challenge: the Bottom Oxide (BOX) layer, by isolating the Silicon Active Area from the bulk made PVC technique less effective in finding leaky MOSFET gates. A solution involving sample preparation performed with standard FA toolset is proposed to enhance PVC on SOI substrate.

Failure Analysis from the Backside of a Die

2000 ◽  
Author(s):  
Silke Liebert
Keyword(s):  
Failure Analysis ◽  
Flip Chip ◽  
Gate Oxide ◽  
Physical Analysis ◽  
Back Side ◽  
Bulk Silicon ◽  
Analysis Methods ◽  
On Chip ◽  
Voltage Contrast ◽  
Side Flow

Abstract A back side failure analysis flow has been developed in order to enable failure analysis of flip-chip, lead-on-chip dies and within multi-metal-level dies. A combination with frontside failure analysis methods is possible too. The back side flow consists of stepwise bulk silicon removal, electrical and physical failure analysis methods. Four different methods for bulk silicon thinning in order to localize electrical defects using PEM are compared. A method to remove the bulk silicon after PEM analysis to expose the gate oxide level of a die has been developed. Different back side applications like physical analysis of gate oxide defects, passive voltage contrast and microprobing with an AFM tip for detection of interrupts within conductive interconnects are described.

Enhanced SEM Doping Contrast

2003 ◽  
Author(s):  
C.Y. Lin ◽  
J. H. Lee
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Electron Beams ◽  
Front End ◽  
Additional Doping ◽  
Voltage Contrast ◽  
Scanning Electron

Abstract Scanning electron beams provide a superior method of failure analysis by observing the voltage contrast (VC) both in frontend and back-end processes. Back-end VC tells us both metal/via open/short issues. Front-end VC tells us not only open/short issue but also additional doping information. A case on the application of passive voltage contrast (PVC) on doping information was studied. This paper explains the mechanism producing passive voltage contrast and describes three methods of sample preparation and provides examples of the results achieved.

Obtaining Low Contact Resistance for Physical Sub-Micron Fault Isolation

2003 ◽  
Author(s):  
C. A. Waggoner ◽  
D. Smith
Keyword(s):  
Atomic Force Microscopy ◽  
Sample Preparation ◽  
Contact Resistance ◽  
Failure Analysis ◽  
Deep Submicron ◽  
Careful Consideration ◽  
Fault Isolation ◽  
Force Microscopy ◽  
Current Technology ◽  
Atomic Force

Abstract The continued application and extension of Moore’s is Law driving semiconductor development into the deep submicron range. 90nm processes are pushing the limits of current technology, and announcements for 65nm and even smaller process developments are common place. Inspection and deprocessing tools are pacing these developments with moderate levels of success [1]. Fault isolation, however, and particularly physical fault isolation at these levels represents perhaps the most daunting of challenges facing today’s semiconductor companies. Possibly the most important failure analysis step, physical fault isolation of sub-micron devices, is growing increasingly more challenging. Traditional probe stations find limitation below 500nm feature sizes. Recent approaches to probing smaller geometries, such as AFM (Atomic Force Microscopy), have come up short in flexibility and applicability. Deposition of FIB pads can change circuit characteristics, is costly and time consuming, and is becoming increasingly more difficult as proximities decrease. Successful probing of structures smaller than 300nm require careful consideration to reduce and stabilize contact resistance (RC). A NANO-100TM probe station with SEM optics was used to analyze characteristics of, and the process needed to obtain stable, low RC for physical submicron fault isolation. Main discussion topics include probe tip oxidation, test timing and sample preparation. Probe tip selection, probe scrub, and attack angle are also mentioned. Recommendations and findings are presented for immediate application. It is shown that if the proper steps and considerations are made, stable RC of less than 10V is possible when probing sub-micron devices.

Failure Analysis Case Study of a 1.5 Meter Space Flex Harness

2017 ◽  
Author(s):  
Erick Kim ◽  
Kamjou Mansour ◽  
Gil Garteiz ◽  
Javeck Verdugo ◽  
Ryan Ross ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Failure Modes ◽  
Field Of View ◽  
Area Of Interest ◽  
Air Stream ◽  
Novel Method ◽  
Temperature Controlled ◽  
Non Destructive ◽  
Failure Site

Abstract This paper presents the failure analysis on a 1.5m flex harness for a space flight instrument that exhibited two failure modes: global isolation resistances between all adjacent traces measured tens of milliohm and lower resistance on the order of 1 kiloohm was observed on several pins. It shows a novel method using a temperature controlled air stream while monitoring isolation resistance to identify a general area of interest of a low isolation resistance failure. The paper explains how isolation resistance measurements were taken and details the steps taken in both destructive and non-destructive analyses. In theory, infrared hotspot could have been completed along the length of the flex harness to locate the failure site. However, with a field of view of approximately 5 x 5 cm, this technique would have been time prohibitive.

Novel Failure Analysis Sample Preparation Techniques for PoP Packaging

2012 ◽  
Author(s):  
Ng Sea Chooi ◽  
Chor Theam Hock ◽  
Ma Choo Thye ◽  
Khoo Poh Tshin ◽  
Dan Bockelman
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Failure Mechanisms ◽  
Preparation Process ◽  
Space Saving ◽  
Optical Probing ◽  
Preparation Techniques

Abstract Trends in the packaging of semiconductors are towards miniaturization and high functionality. The package-on-package(PoP) with increasing demands is beneficial in cost and space saving. The main failure mechanisms associated with PoP technology, including open joints and warpage, have created a lot of challenges for Assembly and Failure Analysis (FA). This paper outlines the sample preparation process steps to overcome the challenges to enable successful failure analysis and optical probing.

A New Failure Analysis Flow of Gate Oxide Integrity Failure in Wafer Fabrication

2009 ◽  
Author(s):  
Hua Younan ◽  
Chu Susan ◽  
Gui Dong ◽  
Mo Zhiqiang ◽  
Xing Zhenxiang ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Gate Dielectric ◽  
Dielectric Breakdown ◽  
Defect Density ◽  
Gate Oxide ◽  
Oxide Thickness ◽  
Fault Isolation ◽  
Wafer Fabrication ◽  
Root Cause ◽  
Gate Oxide Integrity

Abstract As device feature size continues to shrink, the reducing gate oxide thickness puts more stringent requirements on gate dielectric quality in terms of defect density and contamination concentration. As a result, analyzing gate oxide integrity and dielectric breakdown failures during wafer fabrication becomes more difficult. Using a traditional FA flow and methods some defects were observed after electrical fault isolation using emission microscopic tools such as EMMI and TIVA. Even with some success with conventional FA the root cause was unclear. In this paper, we will propose an analysis flow for GOI failures to improve FA’s success rate. In this new proposed flow both a chemical method, Wright Etch, and SIMS analysis techniques are employed to identify root cause of the GOI failures after EFA fault isolation. In general, the shape of the defect might provide information as to the root cause of the GOI failure, whether related to PID or contamination. However, Wright Etch results are inadequate to answer the questions of whether the failure is caused by contamination or not. If there is a contaminate another technique is required to determine what the contaminant is and where it comes from. If the failure is confirmed to be due to contamination, SIMS is used to further determine the contamination source at the ppm-ppb level. In this paper, a real case of GOI failure will be discussed and presented. Using the new failure analysis flow, the root cause was identified to be iron contamination introduced from a worn out part made of stainless steel.

Analysis Approach on DMOS Transistor Vth Mismatch Due to Trapped Charges

2015 ◽  
Author(s):  
Hashim Ismail ◽  
Ang Chung Keow ◽  
Kenny Gan Chye Siong
Keyword(s):  
Failure Analysis ◽  
Threshold Voltage ◽  
Gate Oxide ◽  
Analysis Approach ◽  
Test Results ◽  
Root Cause ◽  
Switching Event ◽  
Output Transistor ◽  
Event Based ◽  
Trapped Charge

Abstract An output switching malfunction was reported on a bridge driver IC. The electrical verification testing revealed evidence of an earlier over current condition resulting from an abnormal voltage sense during a switching event. Based on these test results, we developed the hypothesis that a threshold voltage mismatch existed between the sense transistor and the output transistor. This paper describes the failure analysis approach we used to characterize the threshold voltage mismatch as well as our approach to determine the root cause, which was trapped charge on the gate oxide of the sense transistor.

Lithium-ion Battery Degradation Mechanisms and Failure Analysis Methodology

2012 ◽  
Author(s):  
Bhanu Sood ◽  
Lucas Severn ◽  
Michael Osterman ◽  
Michael Pecht ◽  
Anton Bougaev ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Lithium Ion Batteries ◽  
Elevated Temperatures ◽  
Failure Process ◽  
Lithium Ion ◽  
Degradation Mechanisms ◽  
Analysis Methodology ◽  
Depth Of Discharge ◽  
Battery Degradation ◽  
Non Destructive

Abstract A review of the prevalent degradation mechanisms in Lithium ion batteries is presented. Degradation and eventual failure in lithium-ion batteries can occur for a variety of dfferent reasons. Degradation in storage occurs primarily due to the self-discharge mechanisms, and is accelerated during storage at elevated temperatures. The degradation and failure during use conditions is generally accelerated due to the transient power requirements, the high frequency of charge/discharge cycles and differences between the state-of-charge and the depth of discharge influence the degradation and failure process. A step-by-step methodology for conducting a failure analysis of Lithion batteries is presented. The failure analysis methodology is illustrated using a decision-tree approach, which enables the user to evaluate and select the most appropriate techniques based on the observed battery characteristics. The techniques start with non-destructive and non-intrusive steps and shift to those that are more destructive and analytical in nature as information about the battery state is gained through a set of measurements and experimental techniques.

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