Failure Analysis from the Backside of a Die

Author(s):  
Silke Liebert

Abstract A back side failure analysis flow has been developed in order to enable failure analysis of flip-chip, lead-on-chip dies and within multi-metal-level dies. A combination with frontside failure analysis methods is possible too. The back side flow consists of stepwise bulk silicon removal, electrical and physical failure analysis methods. Four different methods for bulk silicon thinning in order to localize electrical defects using PEM are compared. A method to remove the bulk silicon after PEM analysis to expose the gate oxide level of a die has been developed. Different back side applications like physical analysis of gate oxide defects, passive voltage contrast and microprobing with an AFM tip for detection of interrupts within conductive interconnects are described.

Author(s):  
Gwee Hoon Yen ◽  
Ng Kiong Kay

Abstract Today, failure analysis involving flip chip [1] with copper pillar bump packaging technologies would be the major challenges faced by analysts. Most often, handling on the chips after destructive chemical decapsulation is extremely critical as there are several failure analysis steps to be continued such as chip level fault localization, chip micro probing for fault isolation, parallel lapping [2, 3, 4] and passive voltage contrast. Therefore, quality of sample preparation is critical. This paper discussed and demonstrated a quick, reliable and cost effective methodology to decapsulate the thin small leadless (TSLP) flip chip package with copper pillar (CuP) bump interconnect technology.


Author(s):  
Raymond Lee ◽  
Nicholas Antoniou

Abstract The increasing use of flip-chip packaging is challenging the ability of conventional Focused Ion Beam (FIB) systems to perform even the most basic device modification and debug work. The inability to access the front side of the circuit has severely reduced the usefulness of tradhional micro-surgery. Advancements in FIB technology and its application now allow access to the circuitry from the backside through the bulk silicon. In order to overcome the problem of imaging through thick silicon, a microscope with Infra Red (IR) capability has been integrated into the FIB system. Navigation can now be achieved using the IR microscope in conjunction with CAD. The integration of a laser interferometer stage enables blind navigation and milling with sub-micron accuracy. To optimize the process, some sample preparation is recommended. Thinning the sample to a thickness of about 100 µm to 200 µm is ideal. Once the sample is thinned, it is then dated in the FIB and the area of interest is identified using the IR microscope. A large hole is milled using the FIB to remove most of the silicon covering the area of interest. At this point the application is very similar to more traditional FIB usage since there is a small amount of silicon to be removed in order to expose a node, cut it or reconnect it. The main differences from front-side applications are that the material being milled is conductive silicon (instead of dielectric) and its feature-less and therefore invisible to a scanned ion beam. In this paper we discuss in detail the method of back-side micro-surgery and its eflkcton device performance. Failure Analysis (FA) is another area that has been severely limited by flip-chip packaging. Localized thinning of the bulk silicon using FIB technology oflkrs access to diagnosing fdures in flip-chip assembled parts.


Author(s):  
Mark W. Jenkins ◽  
Paiboon Tangyunyong ◽  
Edward I. Cole ◽  
Jerry M. Soden ◽  
Jeremy A. Walraven ◽  
...  

Abstract Light emission [1,2] and passive voltage contrast (PVC) [3,4] are common failure analysis tools that can quickly identify and localize gate oxide short sites. In the past, PVC was not used on electrically floating substrates or SOI (silicon-on-insulator) devices due to the conductive path needed to “bleed off” charge. In PVC, the SEM’s primary beam induces different equilibrium potentials on floating versus grounded (0 V) conductors, thus generating different secondary electron emission intensities for fault localization. Recently we obtained PVC signals on bulk silicon floating substrates and SOI devices. In this paper, we present details on identifying and validating gate shorts utilizing this Floating Substrate PVC (FSPVC) method.


Author(s):  
Soon Lim ◽  
Jian Hua Bi ◽  
Lian Choo Goh ◽  
Soh Ping Neo ◽  
Sudhindra Tatti

Abstract The progress of modern day integrated circuit fabrication technology and packaging has made fault isolation using conventional emission microscopy via the top of the integrated circuit more difficult, if not impossible. This is primarily due to the use of increased levels and density of metal-interconnect, and the advent of new packaging technology, e.g. flip-chip, ball-grid array and lead-on-chip, etc. Backside photon emission microscopy, i.e. performing photon emission microscopy through the bulk of the silicon via the back of the integrated circuit is a solution to this problem. This paper outlines the failure analysis of sub-micron silicon integrated circuits using backside photon emission microscopy. Sample preparation, practical difficulties encountered and case histories will be discussed.


Author(s):  
Re-Long Chiu ◽  
Hui Zhang ◽  
Wen-Szu Chung ◽  
Mark Cherng ◽  
Xu Liu

Abstract Locating the defect site in current devices is complicated by their density and size. Voltage contrast (VC) imaging and backscattered electron (BSE) imaging are non-destructive beam-based location techniques. We can locate the defect to single poly line, contact and via by combining EMMI, LC, layout and bit map address information. Some reliability failure analysis cases are presented to demonstrate the effectiveness of the beam-based techniques. VC imaging and BSE imaging are used to locate the defect site precisely. The subsequent steps include deprocess and precision FIB cut for sample preparation. SEM or TEM is then used to identify failures caused by gate oxide pinhole, contact junction leakage, high butted contact resistance or tungsten residue.


Author(s):  
S.H. Lee ◽  
Y.W. Lee ◽  
K.T. Lee ◽  
C.Y. Choi ◽  
H.W. Shin ◽  
...  

Abstract Innovations in semiconductor fabrication processes have driven process shrinks partly to fulfill the need for low power, system-on-chip (SOC) devices. As the process is innovated, it influences the related design debug and failure analysis which have gone through many changes. Historically for signal probing, engineers analyzed signals from metal layers by using e-beam probing methods [1]. But due to the increased number of metal layers and the introduction of flip chip packages, new signal probing systems were developed which used time resolved photon emission (TRE) to measure signals through the backside. However, as the fabrication process technology continues to shrink, the operating voltage drops as well. When the operating voltage drops below 1.0V, signal probing systems using TRE find it harder to detect the signals [2]. Fortunately, Laser Voltage Probing (LVP) technology [3] is capable of probing beyond this limitation of TRE. In this paper, we used an LVP system to analyze and identify a functional shmoo hole failure. We also proposed the design change to prevent its reoccurrence.


Author(s):  
G. Benstetter ◽  
G. Bomberger ◽  
P. Coutu ◽  
R. Danyew ◽  
R. Douse

Abstract Reducing the cell size of DRAMs in 0.35 micron and follow-on technologies requires failure analysis techniques that can analyze single storage node trench capacitors on both test sites and actual product. A combination of electrical microprobing, probeless voltage contrast and physical delayering procedures, all based on focused- ion-beam (FIB) techniques, are described. Because of precise fail localization, high resolution scanning electron microscope (SEM) imaging enables the distinction between process defects and intrinsic breakdowns of node dielectric defects. Isolated storage cells can be electrically characterized by depositing small probe pads, using FIB for contact hole milling and probe-pad deposition. To localize trench capacitors with a leakage path to the surrounding substrate, the trenches are isolated by mechanical polishing and probeless voltage contrast in the FIB tool. Failing trench capacitors can be marked in the FIB tool. Physical isolation of leaking trench capacitors can be achieved by recessing the adjacent trench capacitors, with the FIB used for milling and a subsequent wet chemical removal added for the remaining substrate material. Alternatively, trench capacitors can be inspected from the backside when stabilized by a quartz deposition on top, followed by mechanical polishing from the side and a wet chemical etching of the remaining substrate material. In both cases, the dielectric of the node trench capacitors can be inspected by high resolution SEMs and the defect areas precisely analyzed.


2009 ◽  
Vol 1 (5) ◽  
pp. 431-440 ◽  
Author(s):  
Gye-An Lee ◽  
Darioush Agahi ◽  
Franco De Flaviis

Performance comparison is made between on-chip spiral inductor in flip-chip versus wirebond package technology. Full-wave electromagnetic simulation and on-strip measurement techniques were used to study the performance fluctuations of inductor within flip-chip environment. Results show that the performance of a flipped silicon-based spiral inductor is affected by the radio frequency (RF) current return path differences. The RF current return path for flip-chip is concentrated on the surface of silicon layer exclusively because back side ground under silicon is floating in flip-chip technology. In addition, the bump proximity effect is also considered. On-chip inductors in flip-chip environment must be optimized by reducing the eddy current in the silicon substrate and parasitic affects by adjusting design parameters. The equivalent circuit model of the flipped on-chip spiral inductor is verified with measured results over broadband frequencies. Also, the RF flip-chip characterization technique using on-strip measurement method is presented.


Author(s):  
David Bethke ◽  
Wayland Seifert

Abstract Time Domain Reflectrometry or TDR is an analytical technique used to determine the impedance and electrical length of conductors. This relatively inexpensive technique utilizes a pulse card and digital oscilloscope whereby the reflected signal amplitude from an initiating pulse is measured versus time. The technique is useful for characterizing the impedance of a conductor in the time domain, and has traditionally been employed in board level analysis. More recently, TDR has been shown to be useful in electrically isolating integrated circuit package failures1. Historically, open failures on non-flip chip devices were resolved through relatively straight-forward, low risk methods in a failure analysis lab. Typically, root cause analysis involved simple verification on a curve tracer, non-destructive inspection using X-Ray imaging, chemical, thermal or mechanical decapsulation, optical and electron microscopy and as necessary, the use of mechanical probe isolation. The implementation of advanced flip chip package technology rendered the traditional isolation methodologies inadequate. After verification and X-ray inspection, a decision had to be made prior to subsequent destructive physical analysis as to the most probable failure location. Since the board interconnects, board interposer, and bump locations were not geometrically aligned, isolation of opens through physical cross-sectioning became risky, tedious and lengthy. These constraints were overcome through the use of TDR analysis. The authors have successfully incorporated the TDR technique into AMD’s microprocessor failure analysis flow, improving success rate, reducing risk and decreasing turn-around time. The paper will include a brief description of TDR theory and hardware, technical barriers that the authors encountered during implementation, sample preparation as well as details where the technique was successfully employed in failure isolation. The remaining portion of this paper provides illustrative examples where TDR was effectively utilized in the analysis of slot A cards, ceramic flip chip PGA pins, and internal package trace failures.


Author(s):  
Hyunsoo Kim ◽  
Jaehyeong Woo ◽  
Dongju Lim ◽  
Youngje Kim ◽  
Munmo Jeong

Abstract This paper describes the failure analysis methods used to characterize micro cracks that resulted in laser vias of printed circuit boards (PCBs) through case studies of destructive failure analysis. Defects such as cracks in laser vias of PCBs can cause open or low leakage failure mode of module due to improper cleaning during the PCB process, natural oxide films such as brown oxide, or physical forces by use. Therefore, it’s difficult to identify the causes of these phenomena unless proper analytical techniques are used. In this study, multiple analytical techniques are employed to characterize micro cracks in laser vias. The destructive analysis with cross section and ion milling process is used to detect and inspect an accurate micro crack phenomenon of laser via. The characterization analysis using TEM, EDX and SIMS equipment after separating laser vias from a PCB is used to analyze failure cause of micro crack in laser via. This paper will be concluded with a discussion about what physical analysis methods should be used to analyze the causes of micro cracks for laser vias of PCBs.


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