Effectiveness of Nanoprober in Detecting Single/Multiple Bit Flash Data Gain & Data Loss Failures

2009 ◽  
Author(s):  
Rajesh Medikonduri
Keyword(s):  
Flash Memory ◽  
Data Loss ◽  
Voltage Contrast

Abstract This paper discusses the physics, definitions, and nanoprobing flow of a flash bit memory. In addition, a case study showing the effectiveness of nanoprobing in detecting the Single Bit Fail Data Gain and Data Loss in Flash Memory is also discussed. The paper also includes cases where no passive voltage contrast was observed at the SEM and no leakage was observed at AFM, yet the units failing SBF DG, SBF DL and depletion, were detected by nanoprobing of the single bit. The major finding of this paper is a way to resolve data gain, data loss, and depletion failures of flash memory by nanoprobing procedure, despite no PVC seen at the SEM and no leakage seen at the AFM.

Fail Mechanisms Causing Single Bit Flash Data Gain in Flash Memory

2009 ◽  
Author(s):  
Rajesh Medikonduri
Keyword(s):  
Flash Memory ◽  
Semiconductor Industry ◽  
Failure Mechanisms ◽  
Final Conclusion ◽  
Cell Theory ◽  
Data Loss ◽  
Voltage Contrast

Abstract Flash memory is one of the most mysterious and difficult structures in the semiconductor industry. Excessive data gain and data loss may cause errors in reading the flash memory. This paper discusses the data gain mechanism and the various failure mechanisms (i.e., CoSi at Mux, CoSi at bit, particle at Mux, resistive contact, erasing defect at failing bit, programming fail at bit, misaligned contact, passive voltage contrast (PVC) at multiple gates in Mux region, particle and missing via, poly residue defect etc.) causing single bit flash data gain. Presented in the paper are the definitions involved, Flash cell theory and physics involved, and the theory explaining why leakage in the 8:1 mux causes the single bit flash data gain. This is followed by a case study involving various failure mechanisms and a final conclusion. Knowing the fail mechanisms and correcting them promptly enhances the yield.

Production Yield Enhancement through Failure Analysis Investigation

2009 ◽  
Author(s):  
Rajesh Medikonduri
Keyword(s):  
Failure Analysis ◽  
Flash Memory ◽  
Production Yield ◽  
Yield Enhancement ◽  
Related Issue ◽  
Data Loss ◽  
Current Testing ◽  
Corrective Actions ◽  
The One

Abstract Production yield verification for a complex device, such as the flash memory, is a problem of primary importance due to high design density and current testing capabilities of such design. In this paper, the flow byte issue in the one time programmable block is investigated through physical failure analysis (PFA). The customer reported fail for this unit was flow byte error with flipped data loss in one of the bit. Various experiments were done on numerous units to identify the yield related issue and prevent shipment of such units to customers. The case study from this paper is beneficial to the FA community by showing the exact methodology in identifying the problem, its containment, and implementation of corrective actions on the ATE to prevent shipment of low yield units to customer. The yield was enhanced by implementing the containment and corrective actions on the ATE.

Application of KOH Electrochemical Etch and Passive Voltage Contrast Techniques for Deep Sub-Micron CMOS Leaky Gate Detection

2000 ◽  
Author(s):  
Fred Y. Chang ◽  
Victer Chan
Keyword(s):  
Case Studies ◽  
Detection Technique ◽  
Cobalt Silicide ◽  
Process Technology ◽  
Process Flow ◽  
Voltage Contrast ◽  
Emission Detection ◽  
Wet Etch ◽  
Direct Confirmation

Abstract This paper describes a novel de-process flow by combining cobalt silicide / nitride wet etch with KOH electrochemical wet etch (ECW) to identify leaky gate in silicided deep sub-micron process technology. Traditionally, leaky gate identification requires direct confirmation by gate level electrical or emission detection technique. Ohtani [1] used KOH electrochemical etch application to identify nonsilicided leaky gate capacitor in DRAM without using the above confirmation. The result of the case study demonstrates the expanded application of ECW etch to both silicided 0.18um logic and SRAM devices. Voltage contrast at metal 1 to assist leaky gate localization is also proposed. By combining both techniques, the possibility for isolating gate related defects are greatly enhanced. Case studies also show the advantages of the proposed technique over conventional poly level voltage contrast in leaky gate identification especially with devices that use local interconnect and nitride liner process.

scholarly journals Dynamic Network Model for Smart City Data-Loss Resilience Case Study: City-to-City Network for Crime Analytics

IEEE Access ◽  
2017 ◽  
Vol 5 ◽  
pp. 20524-20535 ◽  
Author(s):  
Olivera Kotevska ◽  
A. Gilad Kusne ◽  
Daniel V. Samarov ◽  
Ahmed Lbath ◽  
Abdella Battou
Keyword(s):  
Network Model ◽  
Smart City ◽  
Dynamic Network ◽  
Data Loss ◽  
Dynamic Network Model ◽  
City Network

Passive Voltage Contrast Technique for Rapid In-Line Characterization and Failure Isolation During Development of Deep-Submicron ASIC CMOS Technology

1998 ◽  
Author(s):  
Victor Liang ◽  
Harlan Sur ◽  
Subhas Bothra
Keyword(s):  
Gate Oxide ◽  
Cmos Technology ◽  
Relative Magnitude ◽  
Deep Submicron ◽  
Process Step ◽  
First Case ◽  
Contrast Technique ◽  
Rapid Characterization ◽  
Voltage Contrast

Abstract Three case studies in which the passive voltage contrast technique (PVC) was used in-fab during the development of a 0.25mm ASIC CMOS technology for rapid characterization and failure isolation are presented. The first case involved using the PVC technique to evaluate the gate oxide quality at different points of the process, allowing for quick identification of the process steps that were damaging the gate oxide and the relative magnitude of the damage that each process step contributed. PVC was then used to perform in-line evaluation of the split lots that were ran to address the problem without having to pull wafers off the line for electrical testing. In the second case study, PVC was used in-line to identify the source of siliciderelated gate-to-source/drain leakage. At this point of the process, electrical probing was not possible, and PVC circumvented this problem. The third case involved using PVC to help identify a new failure mechanism for tungsten plug vias that manifested itself due to plasma charging and layout peculiarities related to deep submicron design rules.

Passive Voltage Contrast Application on Analysis of Gate Oxide Failure in 0.25 μm Technology

2000 ◽  
Author(s):  
Song Zhigang ◽  
Loh Sock Khim ◽  
Shailesh Redkar
Keyword(s):  
Random Access ◽  
Gate Oxide ◽  
Static Random Access Memory ◽  
Access Memory ◽  
Emission Analysis ◽  
Gate Oxides ◽  
Mos Devices ◽  
Voltage Contrast ◽  
Metal Layers

Abstract With further miniaturization of MOS devices, the thickness of gate oxides becomes thinner and thus more sensitive to damage. Emission microscopy has shown its capability in analysis of these failures. However, emission site is not always the exact location of the physical defect. High-density devices with multi-metal layers make the situation worse. But when it is combined with Passive Voltage Contrast (PVC) technique, the success rate of isolating such failures can be greatly increased. In a case study, a unit of 1M bits Static Random Access Memory (SRAM), fabricated by 0.25 µm technology with 5 metal layers, failed after 500 hours burn-in. We successfully isolated the leaky poly and subsequently found gate oxide pinholes with the combination of PVC technique and emission analysis.

A Case Study—Improving FIB Passive Voltage Contrast Imaging for Deep N-Well Circuits

2015 ◽  
Author(s):  
Randal Mulder
Keyword(s):  
Failure Analysis ◽  
Failure Mechanism ◽  
Fault Location ◽  
Analog Circuit ◽  
Design Feature ◽  
Previous Attempt ◽  
Contrast Imaging ◽  
Circuit Blocks ◽  
Voltage Contrast

Abstract This paper presents a case study of a customer return that failed functional testing on the production tester. Investigation by applications and design engineering identified several analog circuit blocks where a possible failure mechanism could be located causing the functional failure mode seen at test. The identified circuit blocks all resided in deep n-well structures preventing traditional passive voltage contrast imaging (PVC) from being used to isolate the fault location. Neither functional probing nor active voltage contrast imaging were viable options to isolate the failure mechanism to a specific node. The analyst, having a good understanding of the principles of PVC and the difficulties associated with PVC imaging of deep n-well circuits, took advantage of a design feature in the device to restore the ability to perform passive voltage contrast imaging on these circuits. Using this enhanced PVC capability, two polysilicon capacitors with degraded oxide integrity were easily identified. This degraded oxide was verified to cause abnormal leakage to the substrate by means of nanoprobe analysis. Without identifying and taking advantage of a design feature not intended for failure analysis, locating these damage poly capacitors would have been extremely difficult because existing analysis techniques could only localize the failure to a number of circuit blocks. This paper presents a brief detailed over-view of PVC imaging, the issues with PVC imaging of deep n-well circuits, and an example of a previous attempt to overcome the deep n-well PVC problem. This review is then followed by the case study demonstrating the steps taken to restore PVC capability and concludes with recommendations for design for failure analysis (DFA).

Couple Passive Voltage Contrast with Scanning Probe Microscope to Identify Invisible Implant Issue

2005 ◽  
Author(s):  
Cha-Ming Shen ◽  
Shi-Chen Lin ◽  
Chen-May Huang ◽  
Huay-Xan Lin ◽  
Chi-Hong Wang
Keyword(s):  
Scanning Probe Microscopy ◽  
Electrical Characterization ◽  
Defect Mode ◽  
Scanning Probe ◽  
Electrical Characteristics ◽  
Differential Analysis ◽  
Probe Microscope ◽  
Compound Method ◽  
Voltage Contrast

Abstract This paper presents a judicious reasoning method by coupling passive voltage contrast (PVC) with scanning probe microscopy (SPM) for revealing particular invisible defect modes, which were imperceptible to observe and very difficult to identify by means of traditional physical failure analysis techniques. In order to certify this compound method, it is applied to an implant issue as a case study. Through solving this particular defect mode, whose exact failure position could not be determined even with the most sensitive PVC or high-resolution SPM current mapping, the procedures and contentions are illustrated further. The significance of the reasoning method is based on electrical characterization and differential analysis. By coupling PVC with SPM, the capability to identify tiny defects is not limited to just distinguishing leakage or high-resistance under contacts. PVC can detect abnormal N+ contacts due to improper implanting, and SPM can provide the precise electrical characteristics.

Flash memory cells data loss caused by total ionizing dose and heavy ions

Open Physics ◽  
2014 ◽  
Vol 12 (10) ◽  
Author(s):  
Andrey Petrov ◽  
Alexey Vasil’ev ◽  
Anastasia Ulanova ◽  
Alexander Chumakov ◽  
Alexander Nikiforov
Keyword(s):  
Flash Memory ◽  
Heavy Ions ◽  
Memory Loss ◽  
Experimental Results ◽  
Space Application ◽  
Memory Cells ◽  
Data Loss ◽  
Storage Element ◽  
Charge Loss ◽  
Data Investigation

AbstractThe paper provides experimental results of flash memory loss data investigation. Possible mechanisms of charge loss from storage element are reviewed. We provide some guidelines for flash memory evaluation to space application.

scholarly journals Sistem Integrasi BOT Register Terhadap Website Pengolah Data Menggunakan Akses NGROK

2021 ◽  
Vol 19 (2) ◽  
pp. 1
Author(s):  
Rizky Parlika ◽  
Devan Cakra Mudra Wijaya ◽  
Tasya Ardhian Nisaa’ ◽  
Susy Rahmawati
Keyword(s):  
Data Storage ◽  
Public Access ◽  
Data Loss ◽  
Time Duration ◽  
New Members ◽  
Registration System ◽  
Local Database ◽  
Storage Media ◽  
Data Processor

This information system is based on a website that functions as a data processor obtained from the bot register. The integration of the system uses NGROK access which can unify local public access routes or in one go. The use of XAMPP as a web server can support the use of NGROK. NGROK server has a time duration in one use, which is about 8 hours. Users will get a domain URL when accessing NGROK. This domain URL is so unique that each session will change. The case study we are using leads to the registration system for new members of the East Java Veteran UPN robotics community, which so far still uses Google Form as a means of registering and spreadsheets as data storage media. The need for an innovation which can simplify work, especially during the Covid-19 period, therefore we created an innovation in the form of a bot register that can integrate with the website through NGROK access combined with the MySQL Local Database so that this software is expected to provide access registration directly without having to fear data loss and can also provide secure data management.

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