scholarly journals Charge-Induced Damage on SOI Wafers—A Case Study

2017 ◽  
Author(s):  
Mary A. Miller ◽  
Darlene M. Udoni
Keyword(s):  
Integrated Circuits ◽  
Spatial Patterns ◽  
Chemical Mechanical Planarization ◽  
Induced Voltage ◽  
Thermally Induced ◽  
Electrical Failure ◽  
Analysis Techniques ◽  
Root Cause ◽  
Current Voltage

Abstract This work outlines a case study of charge-induced damage to SOI wafers that caused gate leakage in discrete transistors and static leakage in packaged integrated circuits (ICs). The consequential yield fallout occurred primarily at wafer center. Electrical, optical, and laser-based failure analysis techniques were used to characterize the damage and determine root cause of electrical failure. The failure mechanism was localized to a rinse step during chemical mechanical planarization (CMP). Furthermore, both current-voltage (IV) sweeps and characteristic spatial patterns generated by thermally-induced voltage alteration (TIVA) were used to capture the trends on both packaged ICs and SOI wafers for this type of charge-induced damage; this led to quick identification of another source of charge-induced damage that affected the post-fab yield.

Speed Path Analysis: A Connection Between Speed Degradation, Silicon Dislocations, and Light Induced Voltage Alteration

2003 ◽  
Author(s):  
D. Davis
Keyword(s):  
Failure Analysis ◽  
Path Analysis ◽  
Standard Test ◽  
Induced Voltage ◽  
Test Program ◽  
Electrical Failure ◽  
Analysis Techniques ◽  
Current Voltage

Abstract The failure analyst is often times challenged with the analysis of devices that fail due to speed degradation. These are units that pass the entire standard test program as long as the speed at which the device is tested is kept below a certain level. Many times, these units are binned and sold to customers at reduced prices. The unresolved rate for these types of failures is often sporadic and at times there isn’t any defect that is physically observable or detectable with global EFA (electrical failure analysis) techniques. These devices are usually from an advanced process where a shift in performance such as current, voltage, and speed (frequency) is common.

Detection and Characterization of an Electrical Failure Induced during Laser Ablation of Packages

2008 ◽  
Author(s):  
P. Schwindenhammer ◽  
H. Murray ◽  
P. Descamps ◽  
P. Poirier
Keyword(s):  
Laser Ablation ◽  
Integrated Circuits ◽  
Failure Analysis ◽  
Ablation Process ◽  
Thermally Induced ◽  
Electrical Failure ◽  
Electrical Phenomenon ◽  
Semiconductor Packages ◽  
Complex Semiconductor

Abstract Decapsulation of complex semiconductor packages for failure analysis is enhanced by laser ablation. If lasers are potentially dangerous for Integrated Circuits (IC) surface they also generate a thermal elevation of the package during the ablation process. During measurement of this temperature it was observed another and unexpected electrical phenomenon in the IC induced by laser. It is demonstrated that this new phenomenon is not thermally induced and occurs under certain ablation conditions.

scholarly journals Konflik Penolakan Ritual Doa Leluhur Paguyuban Padma Buana di Pedukuhan Mangir Bantul, Yogyakarta

SMART ◽  
2020 ◽  
Vol 6 (1) ◽  
pp. 49-62
Author(s):  
Setyo Boedi Oetomo
Keyword(s):  
Factor Analysis ◽  
Cultural Tourism ◽  
Analysis Techniques ◽  
Root Cause ◽  
Multiple Factors ◽  
Tourism Management ◽  
The People ◽  
Local Residents ◽  
The Village

The people of Yogyakarta are known for their tolerance, where people of different religions can coexist peacefully especially with Javanese traditions. But in Mangir, a village in Bantul, Yogyakarta, in November 12, 2019, there was a case of local residents rejecting the procession of ancestral prayer rituals by the Paguyuban Padma Buana (PPB) who claims to be followers of Javanese Hinduism. This study aimed at disclosing the elements and roots of conflict from the Mangir community's rejection towards Paguyuban Padma Buana. As a case study, it used conflict analysis approach through timeline and factor analysis techniques. The results showed that the open conflict between the two groups has occurred since 2012 with the main issue of syncretic ritual practices of Hinduism, Buddhism, and Kejawen (Javanism) that involve people from various religions. In addition, the Maha Lingga Padma Buana Temple as a place of whorship and rituals has also the license problems. Reconciliation was carried out between residents with the Padma Buana followers in 2015. Unfortunately it was violated by the Paguyuban Padma Buana and became a trigger of conflict back in 2019. The cause of this conflict is multiple factors, all of which are interrelated. However, the root cause of the problem among Mangir people is mostly related to traditional revivalism and the distribution of cultural tourism management authorities. This conflict makes them polarized and vulnerable to interests that can create the village atmosphere worse

An Analytical Technique to Assess the Risk of Laser Damage to Encapsulated Integrated Circuits during Package Laser Marking

2008 ◽  
Author(s):  
Joseph Patterson ◽  
Cliff Schuring
Keyword(s):  
Integrated Circuits ◽  
Optical Beam ◽  
Laser Damage ◽  
Induced Current ◽  
Induced Voltage ◽  
Laser Marking ◽  
Thermally Induced ◽  
Analytical Technique ◽  
Optical Beam Induced Current

Abstract Damage to encapsulated integrated circuits has recently been reported due to Laser marking of the package. A method to assess the risk of such damage is presented. The method is an analytical technique using Thermally Induced Voltage Alteration (XIVA) and Optical Beam Induced Current (OBIC) imaging.

Symptom or Cause? A Case Study

2015 ◽  
Author(s):  
Anuradha Swaminathan ◽  
Joy Liao ◽  
Howard Marks
Keyword(s):  
Failure Analysis ◽  
Continuous Wave ◽  
Analysis Data ◽  
Continuous Wave Laser ◽  
Electrical Failure ◽  
Root Cause ◽  
First Case ◽  
Successful Analysis ◽  
28 Nm

Abstract Although there are many advanced technologies and techniques for silicon diagnostics, effective failure analysis to root cause is getting increasingly challenging, as very often the electrical failure analysis data would point to a symptom that is the result of the defect rather than the actual location of the defect. Therefore, a combination of multiple techniques is often employed so that sensitivity of "the cause of the problem" can be observed. This work compiles a successful analysis with the aid of continuous wave laser voltage probing and soft defect localization techniques and presents three cases that are voltage-sensitive fails. The first case is a 28 nm device which failed at-speed scan. The second case is a 28 nm device failing RAM register BIST with high Vmin and the third case is a scan shift failure in a less than 28nm device.

scholarly journals Novel Defect Detection Using Laser-Based Imaging and TIVA with a Visible Laser

2013 ◽  
Author(s):  
Mary A. Miller ◽  
Paiboon Tangyunyong ◽  
Edward I. Cole ◽  
Alejandro Pimentel ◽  
Darlene M. Udoni
Keyword(s):  
Case Studies ◽  
Laser Scanning ◽  
Laser Scanning Microscopy ◽  
Induced Voltage ◽  
Thermally Induced ◽  
First Case ◽  
Reflected Light ◽  
Visible Laser ◽  
532 Nm

Abstract This paper presents two different case studies that highlight the use of reflected light imaging in laser scanning microscopy. In the first case study, the exact location of defects in metal comb test structures were much easier to detect with reflected light imaging than with thermally-induced voltage alteration (TIVA). This case study also shows visible-wavelength TIVA defect localization using a 532-nm laser. A comparison between 532-nm TIVA and conventional 1320-nm TIVA is made to show the resolution improvement with the visible laser. In the second case study, the cause of a linear string of bit failures was localized easily with backside reflected light imaging. It is observed that the indicated sites matched the light-induced voltage alteration signals and the failing cells in the bit map. In both of the case studies, the reflected light images have proved very helpful in the localization and characterization of failing devices or test structures.

Effect of Metallic Contamination on Interface Properties and Oxide Reliability

2002 ◽  
Vol 716 ◽  
Author(s):  
Elena Oborina ◽  
Scott Campbell ◽  
Andrew M. Hoff ◽  
Richard Gilbert ◽  
Eric Persson ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Surface Analysis ◽  
Secondary Ion Mass Spectrometry ◽  
Chemical Mechanical Planarization ◽  
Contamination Control ◽  
Analysis Techniques ◽  
Surface Analysis Techniques ◽  
Measurement Results ◽  
Silicon Structures ◽  
Metallic Contamination

AbstractNew and emerging process technologies such as Damascene interconnect, metal gate and metal silicide processes are creating metal contamination control challenges for current and future generations of integrated circuits. In this work, we studied the contamination of oxidized silicon wafers by several metals of industrial importance including copper, cobalt, sodium, iron and nickel. Contamination was applied by spin-coating in a range from 20ppb to 500 ppb. Such levels are representative of exposure challenges induced during chemical processes such as CMP (chemical mechanical planarization) cleans. Solvated contamination ions were driven into the oxide layer by corona temperature stress (CTS). The concentrations of metallic species incorporated within the oxide by CTS were quantified using VPD-ICPMS (vapor phase decomposition) and SIMS (secondary ion mass spectrometry) surface analysis techniques. Noncontact COCOS (Corona Oxide Characterization of Semiconductor) methods were employed to measure the electrical properties and reliability of nascent and contaminated oxide/silicon structures. We show that in the absence of significant signals from the surface analysis techniques the COCOS methods show signatures of the metallic contamination in the measurement results.

Characterization of Green and Ultraviolet LEDs by Laser-Based FA Techniques

2010 ◽  
Author(s):  
M. A. Miller ◽  
E. I. Cole ◽  
P. Tangyunyong
Keyword(s):  
Integrated Circuits ◽  
Cavity Surface ◽  
Material System ◽  
Induced Voltage ◽  
Thermally Induced ◽  
Vertical Cavity Surface ◽  
Electron Hole Pair ◽  
Emitting Lasers ◽  
Localize Potential ◽  
Uv Leds

Abstract This work modifies existing nondestructive, laser-based techniques, such as thermally-induced voltage alteration (TIVA) and light-induced voltage alteration (LIVA), to determine precursors to failure in green and UV LEDs. Both TIVA and LIVA have been shown to be effective tools in localizing defects in Si-based integrated circuits and GaAs vertical cavity surface-emitting lasers. In a previous work, TIVA was also used to demonstrate failed InGaN LEDs in the III-V material system. This article expands the use of these techniques to localize potential precursors that lead to premature failures in deep green and deep UV LEDs. The paper shows how the TIVA/LIVA techniques were successfully used to characterize defects in wide bandgap AlGaN- and InGaN-based LEDs. The defects in the green LEDs appear to be electron-hole pair recombination sites and the observed voltage signals are primarily due to a LIVA effect.

Case Study of a DDR Loopback Test Failure Encountered on a Map Ball Grid Array Packaged Device

2017 ◽  
Author(s):  
Jose Z. Garcia ◽  
Kris Dickson
Keyword(s):  
Failure Analysis ◽  
Ball Grid Array ◽  
Analysis Techniques ◽  
Root Cause ◽  
Test Methodology ◽  
Cause Of Failure ◽  
Test Failure

Abstract This paper describes how a DDR loopback test failure was analyzed successfully after being repackaged from an MBGA into a TBGA package substrate. DDR loopback test methodology is discussed as well as the advanced failure analysis techniques that were used to identify the root cause of failure.

A Case Study of the Reliability of Copper Bond Wires In Plastic Encapsulated Integrated Circuits

2014 ◽  
Vol 2014 (1) ◽  
pp. 000804-000809
Author(s):  
Ken Turner
Keyword(s):  
Integrated Circuits ◽  
Acoustic Microscopy ◽  
Temperature Sensitive ◽  
Lead Frame ◽  
Root Cause ◽  
Failure Investigation ◽  
Mechanical Removal ◽  
Bond Wires ◽  
Scanning Electron

Sixteen plastic encapsulated integrated circuits were initially received as part of a root-cause failure investigation, twelve of which contained copper bond wires and the other four containing gold bond wires. It was reported that eight of the integrated circuits had failed in the field with intermittent or complete malfunction of the components. Electrical testing confirmed the reported failure and found temperature sensitive, intermittent open circuits on various pins coinciding with the sample history. C-Mode scanning acoustic microscopy (CSAM) was performed on the devices, with each sample exhibiting varying degrees of delamination between the lead-frame and the plastic encapsulant. The backside of the package was polished into the underside of the lead-frame to preclude the introduction of any contamination due to chemical decapsulation. This allowed the mechanical removal of the leads from the package and inspection of the stitch bonds. Scanning electron microscope (SEM) inspection revealed that the copper stitch bonds had corroded to some extent (ranging from mild corrosion to complete consumption of the stitch bond) in each of the examined bonds, whereas the gold stitch bonds were unaffected. Overall inspection of the leads identified chlorine contamination along the delaminated interface.

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