Speed Path Analysis: A Connection Between Speed Degradation, Silicon Dislocations, and Light Induced Voltage Alteration

2003 ◽  
Author(s):  
D. Davis
Keyword(s):  
Failure Analysis ◽  
Path Analysis ◽  
Standard Test ◽  
Induced Voltage ◽  
Test Program ◽  
Electrical Failure ◽  
Analysis Techniques ◽  
Current Voltage

Abstract The failure analyst is often times challenged with the analysis of devices that fail due to speed degradation. These are units that pass the entire standard test program as long as the speed at which the device is tested is kept below a certain level. Many times, these units are binned and sold to customers at reduced prices. The unresolved rate for these types of failures is often sporadic and at times there isn’t any defect that is physically observable or detectable with global EFA (electrical failure analysis) techniques. These devices are usually from an advanced process where a shift in performance such as current, voltage, and speed (frequency) is common.

scholarly journals Charge-Induced Damage on SOI Wafers—A Case Study

2017 ◽  
Author(s):  
Mary A. Miller ◽  
Darlene M. Udoni
Keyword(s):  
Integrated Circuits ◽  
Spatial Patterns ◽  
Chemical Mechanical Planarization ◽  
Induced Voltage ◽  
Thermally Induced ◽  
Electrical Failure ◽  
Analysis Techniques ◽  
Root Cause ◽  
Current Voltage

Abstract This work outlines a case study of charge-induced damage to SOI wafers that caused gate leakage in discrete transistors and static leakage in packaged integrated circuits (ICs). The consequential yield fallout occurred primarily at wafer center. Electrical, optical, and laser-based failure analysis techniques were used to characterize the damage and determine root cause of electrical failure. The failure mechanism was localized to a rinse step during chemical mechanical planarization (CMP). Furthermore, both current-voltage (IV) sweeps and characteristic spatial patterns generated by thermally-induced voltage alteration (TIVA) were used to capture the trends on both packaged ICs and SOI wafers for this type of charge-induced damage; this led to quick identification of another source of charge-induced damage that affected the post-fab yield.

Accelerating Technology Development and Yield Ramp on First Silicon Utilizing a Wafer-Level Dynamic EFA System

2016 ◽  
Author(s):  
Li-Qing Chen ◽  
Ming-Sheng Sun ◽  
Jui-Hao Chao ◽  
Soon Fatt Ng ◽  
Kapilevich Izak ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Technology Development ◽  
Photon Emission ◽  
Wafer Level ◽  
Success Story ◽  
Electrical Failure ◽  
Analysis Techniques ◽  
Soft Failure ◽  
Scan Chain ◽  
Hard Failure

Abstract This paper presents the success story of the learning process by reporting four cases using four different failure analysis techniques. The cases covered are IDDQ leakage, power short, scan chain hard failure, and register soft failure. Hardware involved in the cases discussed are Meridian WS-DP, a wafer-level electrical failure analysis (EFA) system from DCG Systems, V9300 tester from Advantest, and a custom cable interface integrating WSDP and V9300 with the adaption of direct-probe platform that is widely deployed for SoC CP test. Four debug cases are reported in which various EFA techniques are proven powerful and effective, including photon emission, OBIRCH, Thermal Frequency Imaging, LVI, LVP, and dynamic laser stimulation.

Ambient Temperature Thermally Induced Voltage Alteration for Identification of Defects in Superconducting Electronics

2018 ◽  
Author(s):  
Mark W. Jenkins ◽  
Paiboon Tangyunyong ◽  
Nancy A. Missert ◽  
Alejandro A. Pimentel ◽  
Igor Vernik ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Ambient Temperature ◽  
Room Temperature ◽  
Failure Modes ◽  
State Of The Art ◽  
Cryogenic Temperatures ◽  
Induced Voltage ◽  
Thermally Induced ◽  
Analysis Techniques ◽  
Superconducting Electronics

Abstract As research in superconducting electronics matures, it is necessary to have failure analysis techniques to identify parameters that impact yield and failure modes in the fabricated product. However, there has been significant skepticism regarding the ability of laser-based failure analysis techniques to detect defects at room temperature in superconducting electronics designed to operate at cryogenic temperatures. In this paper, we describe preliminary data showing the use of Thermally Induced Voltage Alteration (TIVA) [1] at ambient temperature to locate defects in known defective circuits fabricated using state-of-the-art techniques for superconducting electronics.

Ultra-Thinning of Silicon for Backside Fault Isolation

2019 ◽  
Author(s):  
M. J. Campin ◽  
P. Nowakowski ◽  
P. E. Fischione
Keyword(s):  
Integrated Circuits ◽  
Failure Analysis ◽  
State Of The Art ◽  
Fault Isolation ◽  
Infrared Light ◽  
Ion Milling ◽  
Electrical Failure ◽  
Analysis Techniques ◽  
Broad Beam ◽  
Silicon Thickness

Abstract The size of devices on state-of-the-art integrated circuits continues to decrease with each technology node, which drives the need to continually improve the resolution of electrical failure analysis techniques. Solid immersion lenses are commonly used in combination with infrared light to perform analysis from the backside of the device, but typically only have resolutions down to ~200 nm. Improving resolution beyond this requires the use of shorter wavelengths, which in turn requires a silicon thickness in the 2 to 5 µm range. Current ultra-thinning techniques allow consistent thinning to ~10 µm. Thinning beyond this, however, has proven challenging. In this work, we show how broad beam Ar ion milling can be used to locally thin a device’s backside silicon until the remaining silicon thickness is < 5 µm.

Stacked-Die Failure Mechanisms for an Octal, Current Input 20-Bit Analog-to-Digital Converter

2005 ◽  
Author(s):  
Bob K. Craigin ◽  
Bin Ling Zhou ◽  
Jason R. Bridgmon
Keyword(s):  
Failure Analysis ◽  
Failure Mechanisms ◽  
Ion Migration ◽  
Analog To Digital ◽  
Electrical Failure ◽  
Analysis Techniques ◽  
Die Attach ◽  
Current Input ◽  
Self Test ◽  
Package Reliability

Abstract Stacked-die packaging was used to make an octal 20-bit analog-to-digital (A/D) converter by stacking two quad A/D converter die in a single 48-lead QFN (quad flat-pack, no leads) package. Reliability testing for product qualification initially failed only (biased) HAST test. Two failure mechanisms were identified. The first mechanism was silver ion migration at sensitive analog inputs due to high conductive die-attach fillets on the bottom die. The second mechanism was ILD delamination and passivation layer cracking due to spacer-attach stress on the surface of the bottom die. Electrical failure analysis was aided by a self test mode designed into the quad A/D converter. Package opening and other standard failure analysis techniques required some modification to accommodate the stacked-die package. This work points to critical stacked-die assembly steps, including conductive die-attach and nonconductive spacer-attach application, where effects of moisture, bias, and thermal stress must all be considered.

Pengaruh Program E-Samsat terhadap Kepatuhan Wajib Pajak Kendaraan Bermotor Dengan Kepuasan Kualitas Pelayanan Sebagai Variabel Intervening (Studi Kasus Samsat Daerah Istimewa Yogyakarta)

2020 ◽  
Vol 15 (2) ◽  
Author(s):  
Dewi Kusuma Wardani
Keyword(s):  
Data Analysis ◽  
Service Quality ◽  
Path Analysis ◽  
Sampling Method ◽  
Motor Vehicle ◽  
Primary Data ◽  
Significant Positive Effect ◽  
Analysis Techniques ◽  
Positive Effect ◽  
Special Region

The purpose of this research is to know, the influence of e-samsat program to the satisfaction of service quality, the influence of the satisfaction of service quality to the compliance of motor vehicle taxpayer, the influence of e-samsat program to the compliance of the motor vehicle taxpayers, and to know the effect of e-samsat program on compulsory compliance motor vehicle tax through satisfaction of service quality as intervening variable in Special Region of Yogyakarta. We use primary data. The sample of research is 75 taxpayers but the sample that can be processed only 74.The sampling method used is purposive sampling. Data analysis techniques used path analysis, t test, F test, and R2 test. Based on result of research by using path analysis that, e-samsat program have a significant positive effect to service quality satisfaction, service quality satisfaction has a significant positive effect to vehicle taxpayer compliance, e-samsat program has a significant positive effect on vehicle taxpayer compliance and program e-samsat has a significant positive effect on the compliance of motor vehicle taxpayers through the satisfaction of service quality.Keywords: e-samsat program, service quality satisfaction, and taxpayer compliance

Failure Analysis of CDM-ESD Damage in a GaAs RFIC

2000 ◽  
Author(s):  
Amy Poe ◽  
Steve Brockett ◽  
Tony Rubalcava
Keyword(s):  
Radio Frequency ◽  
Failure Analysis ◽  
Integrated Circuit ◽  
Production Test ◽  
Analysis Techniques ◽  
Device Model ◽  
Charged Device ◽  
Subsequent Failure

Abstract The intent of this work is to demonstrate the importance of charged device model (CDM) ESD testing and characterization by presenting a case study of a situation in which CDM testing proved invaluable in establishing the reliability of a GaAs radio frequency integrated circuit (RFIC). The problem originated when a sample of passing devices was retested to the final production test. Nine of the 200 sampled devices failed the retest, thus placing the reliability of all of the devices in question. The subsequent failure analysis indicated that the devices failed due to a short on one of two capacitors, bringing into question the reliability of the dielectric. Previous ESD characterization of the part had shown that a certain resistor was likely to fail at thresholds well below the level at which any capacitors were damaged. This paper will discuss the failure analysis techniques which were used and the testing performed to verify the failures were actually due to ESD, and not caused by weak capacitors.

Nanoprobing Applications with Capacitance-Voltage and Pulsed Current-Voltage Measurements for Device Failure Analysis

2015 ◽  
Author(s):  
LiLung Lai ◽  
Nan Li ◽  
Qi Zhang ◽  
Tim Bao ◽  
Robert Newton
Keyword(s):  
Failure Analysis ◽  
High Speed ◽  
Pulsed Current ◽  
Electrical Measurements ◽  
Device Failure ◽  
Mos Devices ◽  
Atomic Force ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Rising Time

Abstract Owing to the advancing progress of electrical measurements using SEM (Scanning Electron Microscope) or AFM (Atomic Force Microscope) based nanoprober systems on nanoscale devices in the modern semiconductor laboratory, we already have the capability to apply DC sweep for quasi-static I-V (Current-Voltage), high speed pulsing waveform for the dynamic I-V, and AC imposed for C-V (Capacitance-Voltage) analysis to the MOS devices. The available frequency is up to 100MHz at the current techniques. The specification of pulsed falling/rising time is around 10-1ns and the measurable capacitance can be available down to 50aF, for the nano-dimension down to 14nm. The mechanisms of dynamic applications are somewhat deeper than quasi-static current-voltage analysis. Regarding the operation, it is complicated for pulsing function but much easy for C-V. The effective FA (Failure Analysis) applications include the detection of resistive gate and analysis for abnormal channel doping issue.

Detection and Characterization of an Electrical Failure Induced during Laser Ablation of Packages

2008 ◽  
Author(s):  
P. Schwindenhammer ◽  
H. Murray ◽  
P. Descamps ◽  
P. Poirier
Keyword(s):  
Laser Ablation ◽  
Integrated Circuits ◽  
Failure Analysis ◽  
Ablation Process ◽  
Thermally Induced ◽  
Electrical Failure ◽  
Electrical Phenomenon ◽  
Semiconductor Packages ◽  
Complex Semiconductor

Abstract Decapsulation of complex semiconductor packages for failure analysis is enhanced by laser ablation. If lasers are potentially dangerous for Integrated Circuits (IC) surface they also generate a thermal elevation of the package during the ablation process. During measurement of this temperature it was observed another and unexpected electrical phenomenon in the IC induced by laser. It is demonstrated that this new phenomenon is not thermally induced and occurs under certain ablation conditions.

Advanced IR-OBIRCH Analysis Technique for High Isb Failure Analysis

2010 ◽  
Author(s):  
Kuo Hsiung Chen ◽  
Wen Sheng Wu ◽  
Yu Hsiang Shu ◽  
Jian Chan Lin
Keyword(s):  
Failure Analysis ◽  
Failure Mechanisms ◽  
Fault Localization ◽  
Resistance Change ◽  
The Real ◽  
Analysis Techniques ◽  
Analysis Technique ◽  
Leakage Failure ◽  
Failure Site

Abstract IR-OBIRCH (Infrared Ray – Optical Beam Induced Resistance Change) is one of the main failure analysis techniques [1] [2] [3] [4]. It is a useful tool to do fault localization on leakage failure cases such as poor Via or contact connection, FEoL or BEoL pattern bridge, and etc. But the real failure sites associated with the above failure mechanisms are not always found at the OBIRCH spot locations. Sometimes the real failure site is far away from the OBIRCH spot and it will result in inconclusive PFA Analysis. Finding the real failure site is what matters the most for fault localization detection. In this paper, we will introduce one case using deep sub-micron process generation which suffers serious high Isb current at wafer donut region. In this case study a BEoL Via poor connection is found far away from the OBIRCH spots. This implies that layout tracing skill and relation investigation among OBIRCH spots are needed for successful failure analysis.

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