Electron Beam Probing of Active Advanced FinFET Circuit with Fin Level Resolution

2018 ◽  
Author(s):  
T. Tong ◽  
H.J. Ryu ◽  
Y. Wang ◽  
W.-H. Chuang ◽  
J. Huening ◽  
...  
Keyword(s):  
Electron Beam ◽  
Semiconductor Devices ◽  
Fault Isolation ◽  
Real Case ◽  
Image Mapping ◽  
Logic State ◽  
Signal Image ◽  
Time Chip ◽  
First Time ◽  
Beam Signal

Abstract This paper shows for the first time chip level electron beam probing on fully functional 10nm and 14nm node FinFET chips with sub-fin level resolution using techniques developed in house. Three novel electron beam probing techniques were developed and used in the debug and fault isolation of advanced node semiconductor devices. These techniques were E-beam logic state imaging, electron-beam signal image mapping, and E-beam device perturbation. Two tools that can offer all three techniques were constructed and used in production. The techniques have been successfully applied to real case chip debug and fault isolation on advanced 10nm and 14nm FinFET on production tools developed in-house. Sub-fin level resolution was achieved for the first time.

High Spatial and Energy Resolution Fault Isolation by Electron Beam Probing for Advanced Technology Nodes

2020 ◽  
Author(s):  
Jennifer J. Huening ◽  
Prasoon Joshi ◽  
Hyuk Ju Ryu ◽  
Wen-hsien Chuang ◽  
Di Xu ◽  
...  
Keyword(s):  
Electron Beam ◽  
Energy Resolution ◽  
Fault Isolation ◽  
Advanced Technology ◽  
Semiconductor Technology ◽  
Current Technology ◽  
Logic State ◽  
Voltage Contrast ◽  
Lock In ◽  
Technology Nodes

Abstract On older semiconductor technology, electron-beam probing (EBP) for active voltage contrast and waveform on frontside metal lines was widely utilized. EBP is also being extended to include the well-known optical techniques such as signal mapping imaging (SMI) with the use of a lock-in amplifier in the signal chain and e-beam device perturbation. This paper highlights some of the achievements from an Intel in-house built e-beam tool on current technology nodes. The discussion covers the demonstration of fin and contact resolution on the current technology nodes by EBP and the analysis of the SRAM array with EBP and EBP of metal lines. By utilizing EBP, it has been demonstrated that logic state imaging, SMI, and waveform have significantly improved spatial resolution compared to the current optical fault isolation analogues.

Application of Novel Low Current OBIRCH Amplifier and Nanoprobing to Identify Subtle Leakages in Advanced Node Technologies

2018 ◽  
Author(s):  
Satish Kodali ◽  
Liangshan Chen ◽  
Yuting Wei ◽  
Tanya Schaeffer ◽  
Chong Khiam Oh
Keyword(s):  
Signal To Noise Ratio ◽  
Semiconductor Industry ◽  
Fault Isolation ◽  
Ring Oscillator ◽  
High Signal ◽  
The Novel ◽  
Resistance Change ◽  
Three Samples ◽  
Relative Threshold ◽  
First Time

Abstract Optical beam induced resistance change (OBIRCH) is a very well-adapted technique for static fault isolation in the semiconductor industry. Novel low current OBIRCH amplifier is used to facilitate safe test condition requirements for advanced nodes. This paper shows the differences between the earlier and novel generation OBIRCH amplifiers. Ring oscillator high standby leakage samples are analyzed using the novel generation amplifier. High signal to noise ratio at applied low bias and current levels on device under test are shown on various samples. Further, a metric to demonstrate the SNR to device performance is also discussed. OBIRCH analysis is performed on all the three samples for nanoprobing of, and physical characterization on, the leakage. The resulting spots were calibrated and classified. It is noted that the calibration metric can be successfully used for the first time to estimate the relative threshold voltage of individual transistors in advanced process nodes.

The Influence of Optical Beams on Semiconductor Devices During Failure Analysis

2002 ◽  
Author(s):  
Charles Zhang ◽  
Matt Thayer ◽  
Lowell Herlinger ◽  
Greg Dabney ◽  
Manuel Gonzalez
Keyword(s):  
Failure Analysis ◽  
Semiconductor Devices ◽  
Laser Wavelength ◽  
Fault Isolation ◽  
Analysis Techniques ◽  
Cmos Transistor ◽  
Optical Beams

Abstract A number of backside analysis techniques rely on the successful use of optical beams in performing backside fault isolation. In this paper, the authors have investigated the influence of the 1340 nm and 1064 nm laser wavelength on advanced CMOS transistor performance.

Mathematic Model and Method for Solving the Heat-Exchange Problem in Electron-Beam Welding of Arbitrary Areas

2019 ◽  
Vol 291 ◽  
pp. 173-182
Author(s):  
Mykhailo Berdnyk
Keyword(s):  
Electron Beam ◽  
Electron Beam Welding ◽  
Integral Transformation ◽  
Mathematic Model ◽  
Convergent Series ◽  
Dirichlet Boundary Conditions ◽  
Temperature Fields ◽  
The Finite Element Method ◽  
Finite Space ◽  
First Time

For the first time in this article, a mathematical model has been developed for calculating the temperature fields in arbitrary areas in electron-beam welding; this model was created in the form of a boundary value problem of mathematical physics for a parabolic equation of heat conductivity with Dirichlet boundary conditions. A new integral transformation was constructed for a two-dimensional finite space, with the use of which, as well as the finite element method and Galerkin's method, a temperature field has been determined in the form of a convergent series.

HIGH-RESOLUTION HYPERNUCLEAR SPECTROSCOPY ELECTRON SCATTERING AT JLab, HALL A

2010 ◽  
Vol 19 (12) ◽  
pp. 2487-2496 ◽  
Author(s):  
◽  
F. Garibaldi ◽  
E. Cisbani ◽  
F. Cusanno ◽  
S. Frullani ◽  
...  
Keyword(s):  
Electron Beam ◽  
High Resolution ◽  
Energy Resolution ◽  
Electron Scattering ◽  
Ground State ◽  
Missing Energy ◽  
High Quality ◽  
The Core ◽  
Final Data ◽  
First Time

The characteristics of the Jefferson LAB electron beam, together with those of the experimental equipments, offer a unique opportunity to study hypernuclear spectroscopy via electromagnetic induced reactions. Experiment 94-107 started a systematic study on 1p-shell targets, 12 C , 9 Be and 16 O . We present the results from 12 C , 16 O and very preliminary results from 9 Be . For 12 C for the first time measurable strength in the core-excited part of the spectrum between the ground state and the pΛ state was shown in [Formula: see text] for the first time. A high-quality 16Λ N spectrum was produced for the first time with sub-MeV Energy resolution. A very precise B Λ value for 16Λ N , calibrated against the elementary ( e , e ′ K +) reaction on hydrogen, has also been obtained. Final data on 9 Be will be available soon. The missing energy resolution is the best ever obtained in hypernuclear production experiments.

scholarly journals Accelerator-based electron beam technologies for modification of bipolar semiconductor devices

2016 ◽  
Vol 747 ◽  
pp. 012085 ◽  
Author(s):  
Y S Pavlov ◽  
A M Surma ◽  
P B Lagov ◽  
Y L Fomenko ◽  
E M Geifman
Keyword(s):  
Electron Beam ◽  
Semiconductor Devices ◽  
Bipolar Semiconductor

scholarly journals SYNTHESIS OF ZINC SULFIDE RADIOLUMINESCENT PHOSPHORS WITH USE OF ELECTRONIC BEAM MODIFICATION AND INVESTIGATION OF THEIR PROPERTIES

2021 ◽  
Vol 58 ◽  
pp. 46-50
Author(s):  
Mikhail A. Shvindin ◽  
◽  
Vadim V. Bakhmetyev ◽  
Keyword(s):  
Crystal Structure ◽  
Experimental Data ◽  
Electron Beam ◽  
Solid State ◽  
Zinc Sulfide ◽  
Spectral Characteristics ◽  
Light Sources ◽  
Synthesis Conditions ◽  
Radioluminescent Light Sources ◽  
First Time

Synthesized recombination-type zinc sulfide phosphors used in solid-state radioluminescent light sources (SSRLS) are the object of the research. In the course of the study, experimental data were obtained for the first time on the effect of the amount of the incorporated activator on the brightness-spectral characteristics of radioluminescence upon excitation by β-radiation of tritium. Data were obtained on the changes in the radioluminescence parameters under various synthesis conditions, phase composition and electron-beam modification of the crystal structure of the initial phosphors. The results of the work make it possible to find the best light compositions for the use in solid-state radioluminescent light sources

scholarly journals Низкоэнергетическое состояние электронного пучка в коаксиальном диоде с однородным анодом и неоднородным профилем магнитного поля

2018 ◽  
Vol 44 (20) ◽  
pp. 102
Author(s):  
А.В. Громов ◽  
М.Б. Гойхман ◽  
Н.Ф. Ковалев ◽  
А.В. Палицин ◽  
M.I. Fuks ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Electron Beam ◽  
Energy State ◽  
Field Configuration ◽  
Low Energy ◽  
Moderate Magnetic Field ◽  
First Time ◽  
Cylindrical Anode ◽  
The Magnetic Field ◽  
Reflection Plane

AbstractThe possible formation of an extended low-energy state of electron beam in a coaxial diode with homogeneous cylindrical anode and moderate magnetic field with inhomogeneous profile is demonstrated for the first time. It is established that, depending on the magnetic field configuration, virtual cathodes (VCs) of two types can be formed: (i) a stationary VC with a localized reflection plane and (ii) a moving VC with a two-stream low-energy state of the electron beam.

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