scholarly journals Resistive Open Defect Isolation in Nano-Probing

2021 ◽  
Author(s):  
Yunfei Wang ◽  
Hyuk Ju Ryu ◽  
Tom Tong
Keyword(s):  
Electron Beam ◽  
Case Studies ◽  
Induced Resistance ◽  
Resistance Change ◽  
Scanning Capacitance Microscopy ◽  
Capacitance Voltage ◽  
Defect Isolation ◽  
Open Defect ◽  
Open Defects ◽  
Resistive Open Defects

Abstract In this paper, we present case studies of localizing resistive open defects using various FA techniques, including two-terminal IV, two-terminal Electron-Beam Absorbed Current (EBAC), Electron Beam Induced Resistance Change (EBIRCh), Pulsed IV, Capacitance-Voltage (CV) and Scanning Capacitance Microscopy (SCM). The advantage and limitation of each technique will also be discussed.

High Resolution Electron Beam Induced Resistance Change for Fault Isolation with 100 nm2 Localization

2015 ◽  
Author(s):  
Brett A. Buchea ◽  
Christopher S. Butler ◽  
H.J. Ryu ◽  
Wen-hsien Chuang ◽  
Martin von Haartman ◽  
...  
Keyword(s):  
Electron Beam ◽  
High Resolution ◽  
Induced Resistance ◽  
Fault Isolation ◽  
Direct Stimulation ◽  
Resistance Change ◽  
Isolation Technique ◽  
High Resolution Imagery ◽  
Defect Isolation ◽  
Time Required

Abstract A novel fault isolation technique, electron beam induced resistance change (EBIRCh), allows for the direct stimulation and localization of eBeam current sensitive defects with resolution of approximately 100nm square, continuing a history of beam based failure isolation methods. EBIRCh has been shown to work over a range of defects, significantly decreasing the time required for isolation of shorts through straightforward high resolution imagery, allowing for explicit visual defect isolation with a linear resolution of approximately 10nm. This paper discusses the operational setups for the source and amplifier while performing an EBIRCh scan, describes the processes involved in the Intel test vehicle that was used to test EBIRCh, and provides information on two independent functional theories for EBIRCh that operate in conjunction to a greater or lesser extent depending on the defect type. EBIRCh is expected to improve through-put and resolution on various defect types compared to conventional fault isolation techniques.

Laser Failure Isolation Techniques Demonstrated On Test Structures

2008 ◽  
Author(s):  
Frank S. Arnold
Keyword(s):  
Integrated Circuits ◽  
Laser Beam ◽  
Case Studies ◽  
Induced Resistance ◽  
Simple Test ◽  
Resistance Change ◽  
Cross Sectional ◽  
Beam Focusing ◽  
Isolation Techniques ◽  
Heating Effects

Abstract To be better prepared to use laser based failure isolation techniques on field failures of complex integrated circuits, simple test structures without any failures can be used to study Optical Beam Induced Resistance Change (OBIRCH) results. In this article, four case studies are presented on the following test structures: metal strap, contact string, VIA string, and comb test structure. Several experiments were done to investigate why an OBIRCH image was seen in certain areas of a VIA string and not in others. One experiment showed the OBRICH variation was not related to the cooling and heating effects of the topology, or laser beam focusing. A 4 point probe resistance measurement and cross-sectional views correlated with the OBIRCH results and proved OBIRCH was able to detect a variation in VIA fabrication.

Failure Analysis Methodology on Resistive Open Defects

2014 ◽  
Author(s):  
A.C.T. Quah ◽  
G.B. Ang ◽  
D. Nagalingam ◽  
C.Q. Chen ◽  
H.P. Ng ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Case Studies ◽  
Photon Emission ◽  
Analysis Methodology ◽  
Failure Path ◽  
Open Defect ◽  
Emission Microscopy ◽  
Open Defects ◽  
Logic Array ◽  
Failure Site

Abstract This paper describes the observation of photoemissions from saturated transistors along a connecting path with open defect in the logic array. By exploiting this characteristic phenomenon to distinguish open related issues, we described with 2 case studies using Photon Emission Microscopy, CAD navigation and layout tracing to identify the ‘open’ failure path. Further layout and EBAC analysis are then employed to effectively localize the failure site.

Electron Beam Induced Resistance Change for Device Characterization and Defect Localization

2016 ◽  
Author(s):  
Gregory M. Johnson ◽  
Christopher D’Aleo ◽  
Ziyan Xu ◽  
Unoh Kwon ◽  
Harvey Berman ◽  
...  
Keyword(s):  
Electron Beam ◽  
Induced Resistance ◽  
Test Site ◽  
Careful Consideration ◽  
Ring Oscillator ◽  
Material Interfaces ◽  
Resistance Change ◽  
Steady State Condition ◽  
Semiconductor Test ◽  
Specific Contact

Abstract Semiconductor Test Site structures were analyzed using an EBIRCH (Electron Beam Induced Resistance CHange) system. Localization of a RX (active area) to PC (gate) short was achieved with resolution that surpassed that of OBIRCH (Optical Beam Induced Resistance CHange). A voltage breakdown test structure at Metal 1 was stressed in the system, giving isolation to the specific contact. A five-fin diode macro was examined, and it is believed that the electrically active diffusions were imaged as individual fins from Metal 1. A series of ring oscillator devices were examined in steady state condition, and careful consideration of the image supports a hypothesis that Seebeck effect, from heating material interfaces in an EBIRCH system, is the reason for the “dipoles” reported in earlier literature.

High Resolution Localization Using Lock-in Based Electron Beam Methods

2017 ◽  
Author(s):  
Felix Rolf ◽  
Christian Hollerith ◽  
Christian Feuerbaum
Keyword(s):  
Electron Beam ◽  
High Resolution ◽  
Induced Resistance ◽  
High Efficiency ◽  
Optical Beam ◽  
Resistance Change ◽  
Root Cause ◽  
Special Challenge ◽  
Electron Beam Induced Current ◽  
Lock In

Abstract With decreasing transistor sizes accurate failure localization becomes more and more important in order to find the root cause of failures with high efficiency. Field returns are a special challenge, since there is usually only one sample for preparation. Hence, reliable high resolution localization is mandatory for a successful preparation. Optical beam induced resistance change (OBIRCH) is a powerful tool for localization but has resolution limitations due to the diameter of the optical beam. The tool can be further improved by the lock-in technique. In this paper we demonstrate that the lock-in technique can also be applied for electron beam localization methods like electron beam induced current (EBIC) / electron beam absorbed current (EBAC) and resistance change imaging (RCI) / electron beam induced resistance change (EBIRCH).

Beam-Based Defect Localization using Electrons: EBIRCH Overview

2018 ◽  
Author(s):  
Gregory M. Johnson ◽  
Zaheer Khan ◽  
Christopher D’Aleo ◽  
Brian Yates ◽  
Michael Iwatake ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Induced Resistance ◽  
Success Rates ◽  
Resistance Change ◽  
Dominant Mechanism ◽  
Defect Localization ◽  
Different Types ◽  
Scanning Electron

Abstract Electron-Beam Induced Resistance CHange (EBIRCH) is a technique that makes use of the electron beam of a scanning electron microscope for defect localization. The beam has an effect on the sample, and the resistance changes resulting from that effect are mapped in the system. This paper explores the beam-based nature of the technique and uses understanding from another beam-based technique, Optical Beam Induced Resistance CHange (OBIRCH), to propose a dominant mechanism. This mechanism may explain the widely different success rates between different types of samples observed after six month’s use of the technique for isolations on large health of line structures in a failure analysis lab.

Interpreting Laser-Based Fault Localization Results: Case Studies

2019 ◽  
Author(s):  
Sukho Lee ◽  
John van den Biggelaar ◽  
Marc van Veenhuizen
Keyword(s):  
Case Studies ◽  
Circuit Design ◽  
High Sensitivity ◽  
Failure Behavior ◽  
Process Technology ◽  
Resistance Change ◽  
Voltage Imaging ◽  
Root Cause ◽  
First Case ◽  
Proper Interpretation

Abstract Laser-based dynamic analysis has become a very important tool for analyzing advanced process technology and complex circuit design. Thus, many good reference papers discuss high resolution, high sensitivity, and useful applications. However, proper interpretation of the measurement is important as well to understand the failure behavior and find the root cause. This paper demonstrates this importance by describing two insightful case studies with unique observations from laser voltage imaging/laser voltage probing (LVP), optical beam induced resistance change, and soft defect localization (SDL) analysis, which required an in-depth interpretation of the failure analysis (FA) results. The first case is a sawtooth LVP signal induced by a metal short. The second case, a mismatched result between an LVP and SDL analysis, is a good case of unusual LVP data induced by a very sensitive response to laser light. The two cases provide a good reference on how to properly explain FA results.

Fin Level Defect Isolation Inside a FinFET Using Electron Beam Alteration of Current Flow

2017 ◽  
Author(s):  
H.J. Ryu ◽  
A.B. Shah ◽  
Y. Wang ◽  
W.-H. Chuang ◽  
T. Tong
Keyword(s):  
Electron Microscopy ◽  
Electron Beam ◽  
Focused Ion Beam ◽  
Current Flow ◽  
Ion Beam ◽  
The Body ◽  
Complete Understanding ◽  
Root Cause ◽  
Transmission Electron ◽  
Defect Isolation

Abstract When failure analysis is performed on a circuit composed of FinFETs, the degree of defect isolation, in some cases, requires isolation to the fin level inside the problematic FinFET for complete understanding of root cause. This work shows successful application of electron beam alteration of current flow combined with nanoprobing for precise isolation of a defect down to fin level. To understand the mechanism of the leakage, transmission electron microscopy (TEM) slice was made along the leaky drain contact (perpendicular to fin direction) by focused ion beam thinning and lift-out. TEM image shows contact and fin. Stacking fault was found in the body of the silicon fin highlighted by the technique described in this paper.

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