scholarly journals Silicon Carbide Wafer Machining by Using a Single Filament Plasma at Atmospheric Pressure

Coatings ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 958
Author(s):  
Seungryul Yoo ◽  
Dong Chan Seok ◽  
Kang Il Lee ◽  
Yong Ho Jung ◽  
Yong Sup Choi
Keyword(s):  
Atmospheric Pressure ◽  
Etch Rate ◽  
Surface Roughening ◽  
Etch Depth ◽  
Mixed Gas ◽  
Single Filament ◽  
Raster Scan ◽  
Etched Surface ◽  
Sic Wafer ◽  
Filament Plasma

SiC wafers were etched using a filament plasma of He:NF3:O2 (helium:nitrogen trifluoride:oxygen) mixed gas at atmospheric pressure. When 0.5–2 sccm of NF3 was mixed to 2 slm of He filament plasma, the etch depth and etch rate increased, but there was little change in the etch width as the NF3 mixing amount increased. The increment of the NF3 mixing also suppressed the surface roughening of plasma etching. The addition of O2 to the He-NF3 filament plasma slightly increased the SiC wafer etch rate. When the NF3 mixing amount was 2 sccm, the roughness of the etched surface increased sharply by O2 addition. On the contrary, the NF3 mixing amount was 1 sccm; the addition of O2 reduced the roughness more than that of the pristine. The roughness of the pristine SiC wafer specimens is in the range of Ra 0.7–0.8 nm. After 30 min of etching on a 6 mm by 6 mm square area, the roughness of the etched surface reduced to Ra 0.587 nm, while the etch rate was 2.74 μm/h with a He:NF3:O2 of 2:1:3 (slm:sccm:sccm) filament plasma and 3 mm/s speed of raster scan etch of the optimized roughening suppression etching recipe.

Cutting of SiC Wafer by Atmospheric-Pressure Plasma Etching with Wire Electrode

2012 ◽  
Vol 717-720 ◽  
pp. 865-868 ◽  
Author(s):  
Yasuhisa Sano ◽  
Kohei Aida ◽  
Takehiro Kato ◽  
Kazuya Yamamura ◽  
Hidekazu Mimura ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Atmospheric Pressure ◽  
Etch Rate ◽  
Atmospheric Pressure Plasma ◽  
Wire Electrode ◽  
Rf Power ◽  
Pressure Plasma ◽  
Power And Energy ◽  
Sic Wafer ◽  
Conventional Machining

Silicon carbide (SiC) is a promising semiconductor material for high-temperature, high-frequency, high-power, and energy-saving applications. However, it is so hard and chemically stable that there are few efficient conventional machining methods for it. We have developed plasma chemical vaporization machining (PCVM), an atmospheric-pressure plasma etching process, and investigated its application to the processing of SiC substrates. In this paper, the cutting characteristics of a SiC substrate by PCVM with a wire electrode are described. We found that increasing the rf power and reactive gas concentration increases the etch rate and that the etch width can be reduces by increasing the SF6 concentration. The maximum etch rate was 2.1 μm/min and the minimum etch width was 220 μm. It was also demonstrated that a SiC wafer prethinned to 100 μm can be successfully cut without breaking or cracking.

scholarly journals 4H Silicon Carbide Etching Using Chlorine Trifluoride Gas

2008 ◽  
Vol 600-603 ◽  
pp. 655-658 ◽  
Author(s):  
Hitoshi Habuka ◽  
Yusuke Katsumi ◽  
Yutaka Miura ◽  
Keiko Tanaka ◽  
Yasushi Fukai ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Atmospheric Pressure ◽  
Etch Rate ◽  
Gas Flow ◽  
Gas Flow Rate ◽  
Etch Pits ◽  
Average Roughness ◽  
Horizontal Reactor ◽  
Etched Surface ◽  
Substrate Temperatures

The etching technology for 4H-silicon carbide (SiC) was studied using ClF3 gas at 673-973K, 100 % and atmospheric pressure in a horizontal reactor. The etch rate, greater than 10 um/min, can be obtained for both the C-face and Si-face at substrate temperatures higher than 723 K. The etch rate increases with the increasing ClF3 gas flow rate. The etch rate of the Si-face is smaller than that of the C-face. The etched surface of the Si-face shows many hexagonal-shaped etch pits. The C-face after the etching is very smooth with a very small number of round shaped shallow pits. The average roughness of the etched surface tends to be small at the higher temperatures.

Etch Rate and Surface Morphology of Plasma Etched Glass Substrates

2000 ◽  
Vol 657 ◽  
Author(s):  
Junting Liu ◽  
Nikolay I. Nemchuk ◽  
Dieter G. Ast ◽  
J. Gregory Couillard
Keyword(s):  
Plasma Etching ◽  
Glass Ceramic ◽  
Etch Rate ◽  
Glass Ceramics ◽  
Similar Rate ◽  
Optical Mems ◽  
Glass Substrates ◽  
Rate Limiting Step ◽  
Green Glass ◽  
Etched Surface

ABSTRACTMicro-machined transparent components are of interest for optical MEMS and miniaturized biological systems. The glass ceramic GC6 developed by Corning is optically transparent, has a softening point in excess of 900°C, and a thermal expansion coefficient matched to silicon. These properties make it useful for the construction of devices that combine thin film silicon electronics with MEMS systems.Both the ceramic precursor (green glass) and the glass ceramic etch at a similar rate, about 1/3 to 1/4 of that of SiO2 etched under the same conditions, indicating that chemistry rather than microstructure control the etch rate. The cleaning steps used to clean the glass precursor profoundly influence the degree of surface roughness that develops during subsequent plasma etching. In glass ceramics, the morphology of plasma etched surface is always very smooth and independent of the cleaning steps used. Assuming that the removal of spinel crystals is the rate limiting step in plasma etching glass ceramics can explain this observation.

Dicing of SiC Wafer by Atmospheric-Pressure Plasma Etching Process with Slit Mask for Plasma Confinement

2014 ◽  
Vol 778-780 ◽  
pp. 759-762 ◽  
Author(s):  
Yasuhisa Sano ◽  
Hiroaki Nishikawa ◽  
Yuu Okada ◽  
Kazuya Yamamura ◽  
Satoshi Matsuyama ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Atmospheric Pressure ◽  
Removal Rate ◽  
Atmospheric Pressure Plasma ◽  
Etching Process ◽  
Plasma Confinement ◽  
Plasma Etching Process ◽  
Pressure Plasma ◽  
High Removal Rate ◽  
Sic Wafer

Silicon carbide (SiC) is a promising semiconductor material for high-temperature, high-frequency, high-power, and energy-saving applications. However, because of the hardness and chemical stability of SiC, few conventional machining methods can handle this material efficiently. A plasma chemical vaporization machining (PCVM) technique is an atmospheric-pressure plasma etching process. We previously proposed a novel style of PCVM dicing using slit apertures for plasma confinement, which in principle can achieve both a high removal rate and small kerf loss, and demonstration experiments were performed using a silicon wafer as a sample. In this research, some basic experiments were performed using 4H-SiC wafer as a sample, and a maximum removal rate of approximately 10 μm/min and a narrowest groove width of 25 μm were achieved. We also found that argon can be used for plasma generation instead of expensive helium gas.

Development and Optimization of Single Filament Plasma Jets for Wastewater Decontamination

2020 ◽  
Vol 40 (6) ◽  
pp. 1485-1505
Author(s):  
S. A. Yehia ◽  
M. E. Zarif ◽  
B. I. Bita ◽  
M. Teodorescu ◽  
L. G. Carpen ◽  
...  
Keyword(s):  
Plasma Jets ◽  
Single Filament ◽  
Filament Plasma

Feature Size and Density Effects in Wet Selective Etching of GaAs/AlAs p-HEMT Structures with Organic Acid - Peroxide Solutions.

2003 ◽  
Vol 799 ◽  
Author(s):  
Vinay S. Kulkarni ◽  
Kanti Prasad ◽  
William Quinn ◽  
Frank Spooner ◽  
Changmo Sung
Keyword(s):  
Surface Morphology ◽  
Organic Acid ◽  
Etch Rate ◽  
Low Noise ◽  
Wet Etching ◽  
Low Noise Amplifiers ◽  
Etch Depth ◽  
Feature Size ◽  
Selective Etch ◽  
Etch Stop

ABSTRACTPseudomorphic HEMT (p-HEMT) devices are used in a number of wireless communication applications including power amplifiers in the 17–50 GHz range, low noise amplifiers and switches. Selective wet etching is often used to form the gate regions of these devices to avoid plasma damage associated with dry etching. We have investigated the wet etching of small (8μm to 0.5μm) features with organic acid - hydrogen peroxide solutions. Two acid solutions were used as a selective etchant for GaAs using AlAs etch stop layers in a p-HEMT structure grown by MBE. The etched features were characterized by AFM, SEM, and TEM techniques. The etch depth uniformity and reproducibility were found to depend on a number of factors including feature size, feature density, etching chemistry, agitation and surface tension. When features with a range of size and density were placed in close proximity in a layout we found that the etch rate of the different features was a function of density, size and most importantly the etch chemistry. One etchant solution exhibited a 12% difference in etch rate from the smallest feature to the largest, while another solution exhibited uniform etching of all features regardless of size or density. Both solutions produced specular etched surfaces in GaAs and AlGaAs. However, the AlAs etch stop showed a non-uniform surface morphology after etching. The surface morphology of the AlAs etch stop is one factor that limits the over etch which can be designed into the process. The most important factors to be considered in designing a selective etch process will be presented.

Effects of Additive Gas on SiO2 Etching

1992 ◽  
Vol 279 ◽  
Author(s):  
Yasuhiro Miyakawa ◽  
Jun Hashimoto ◽  
Naokatsu Ikegami ◽  
Jun Kanamori
Keyword(s):  
Integrated Circuit ◽  
Vertical Profile ◽  
Etch Rate ◽  
Critical Dimension ◽  
Key Technology ◽  
Precise Control ◽  
Heavily Doped ◽  
Etched Surface ◽  
Sio2 Etching

ABSTRACTPrecise control of critical dimension(CD) loss (defined as the length of the top of contact hole minus the bottom of resist in this paper) and etched profile of contact holes is a key technology in the fabrication of Ultra Large Scaled Integrated Circuit(ULSI). In case of fine contact hole etching, small CD loss and vertical profile is essential. We have found out that N2 addition to Ar/CHF3/CF4 sharpens etched profile with CD loss kept small. And N2 addition also increases etch rate without a heavy deterioration of selectivity of SiO2 versus heavily doped n-type poly cry stall ine Si(n+ poly Si). Mechanisms of changes in etching characteristics have been investigated and discussed with the emphasis on adlayer formed on etched surface.

Fabrication of SiC Nanopillars by Inductively Coupled SF6/O2 Plasma

2012 ◽  
Vol 711 ◽  
pp. 66-69 ◽  
Author(s):  
Ji Hoon Choi ◽  
Laurence Latu-Romain ◽  
Florian Dhalluin ◽  
Thierry Chevolleau ◽  
Bassem Salem ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Etch Rate ◽  
High Selectivity ◽  
Nanometer Scale ◽  
Etch Depth ◽  
Fabrication Technique ◽  
Top Down ◽  
Inductively Coupled ◽  
High Anisotropy ◽  
High Etch Rate

A top-down fabrication technique for nanometer scale silicon carbide (SiC) pillars has been demonstrated by using inductively coupled SF6/O2 plasma etching. At optimal etching conditions, the obtained SiC nanopillars exhibit high anisotropy features (aspect ratio ~ 6.5) with high etch depth (>7 μm). The etch characteristics of SiC nanopillars under these conditions show a high etch rate (550 nm/min) and a high selectivity (over 60 for Ni).

scholarly journals Diamond Etching Beyond 10 μm with Near-Zero Micromasking

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Marie-Laure Hicks ◽  
Alexander C. Pakpour-Tabrizi ◽  
Richard B. Jackman
Keyword(s):  
Surface Roughness ◽  
Etch Rate ◽  
Chemical Resistance ◽  
High Quality ◽  
High Performing ◽  
Etched Surface

Abstract To exploit the exceptional properties of diamond, new high quality fabrication techniques are needed to produce high performing devices. Etching and patterning diamond to depths beyond one micron has proven challenging due to the hardness and chemical resistance of diamond. A new cyclic Ar/O2 - Ar/Cl2 ICP RIE process has been developed to address micromasking issues from the aluminium mask by optimising the proportion of O2 in the plasma and introducing a preferential “cleaning” step. High quality smooth features up to, but not limited to, 10.6 μm were produced with an average etched surface roughness of 0.47 nm at a diamond etch rate of 45 nm/min and 16.9:1 selectivity.

Polishing Characteristics of 4H-SiC Si-Face and C-Face by Plasma Chemical Vaporization Machining

2007 ◽  
Vol 556-557 ◽  
pp. 757-760
Author(s):  
Yasuhisa Sano ◽  
Masayo Watanabe ◽  
Kazuya Yamamura ◽  
Kazuto Yamauchi ◽  
Takeshi Ishida ◽  
...  
Keyword(s):  
Atmospheric Pressure ◽  
Etch Rate ◽  
Removal Rate ◽  
Atmospheric Pressure Plasma ◽  
Plasma Chemical ◽  
Machined Surface ◽  
Pressure Plasma ◽  
High Etch Rate ◽  
High Removal Rate ◽  
Conventional Machining

Silicon carbide (SiC) is a promising semiconductor material for power devices. However, it is so hard and so chemically stable that there is no efficient method of machining it without causing damage to the machined surface. Plasma chemical vaporization machining (PCVM) is plasma etching in atmospheric-pressure plasma. PCVM has a high removal rate equivalent to those of conventional machining methods such as grinding and lapping, because the radical density in atmospheric-pressure plasma is much higher than that in normal low-pressure plasma. In this paper, the polishing characteristics of SiC by PCVM are described. As a result of machining, the surface roughnesses of both Si- and C-faces were improved under a relatively low-etch-rate (100-200 nm/min) condition. The C-face was also improved under a relatively high-etch-rate (approximately 10 μm/min) condition, and a very smooth surface (below 2 nm peak-to-valley in a 500-nm-square area) was achieved.

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