scholarly journals Application of ALD Thin Films on the Surface of the Surgical Scalpel Blade

Coatings ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 1096
Author(s):  
Magdalena Szindler ◽  
Marek Szindler ◽  
Marcin Basiaga ◽  
Wojciech Łoński ◽  
Paulina Kaim
Keyword(s):  
Thin Films ◽  
Cutting Tools ◽  
Atomic Layer ◽  
The Body ◽  
Surgical Instruments ◽  
Oxide Thin Film ◽  
Force Microscopy ◽  
Atomic Force ◽  
Layer Deposition ◽  
Number Of Cycles

The article describes biomaterials and surgical instruments, in particular surgical cutting tools. In addition, the functions of coatings and the layer vapor deposition methods are described. In the experimental component of the study, zinc oxide thin film was deposited on the surgical knife blades by the atomic layer deposition (ALD) method with a varying number of cycles. The structures of the deposited thin films were investigated using a Raman spectrometer and the surface topography of the samples was examined using atomic force microscopy and scanning electron microscopy. The adhesion of the thin films was tested using the micro-scratch method. The corrosion resistance was also tested. Surgical instruments coated with non-allergenic metal oxide coatings, containing metal structures that reduce the growth of bacteria, could significantly decrease the risk of undesirable reactions of the body during and after surgery.

scholarly journals PEALD grown high-k ZrO-=SUB=-2-=/SUB=- thin films on SiC group IV compound semiconductor

2017 ◽  
Vol 51 (1) ◽  
pp. 133
Author(s):  
Anil G. Khairnar ◽  
Vilas S. Patil ◽  
K.S. Agrawal ◽  
Prerna A. Pandit ◽  
Rahul S. Salunke ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
High Mobility ◽  
Atomic Layer ◽  
Compound Semiconductor ◽  
Group Iv ◽  
Force Microscopy ◽  
Atomic Force ◽  
Layer Deposition ◽  
High K

The study of ZrO2 thin films on SiC group IV compound semiconductor has been studied as a high mobility substrates. The ZrO2 thin films were deposited using the Plasma Enhanced Atomic Layer Deposition System. The thickness of the thin films were measured using ellipsometer and found to be 5.47 nm. The deposited ZrO2 thin films were post deposited annealed in rapid thermal annealing chamber at temperature of 400oC. The atomic force microscopy and x-ray photoelectron spectroscopy has been carried out to study the surface topography and roughness and chemical composition of thin film respectively. DOI: 10.21883/FTP.2017.01.8125

Various Applications of Multifunctional Thin Films with Specific Properties Deposited by the ALD Method

2019 ◽  
Vol 293 ◽  
pp. 111-123
Author(s):  
Paulina Boryło ◽  
Marek Szindler ◽  
Krzysztof Lukaszkowicz
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Short Circuit ◽  
Dye Sensitized Solar Cells ◽  
Atomic Layer ◽  
Short Circuit Current ◽  
Transparent Conductive Oxide ◽  
Atomic Force ◽  
Layer Deposition ◽  
Atomic Layer Deposition Method

This paper presents application examples of atomic layer deposition method (ALD) adopted for production of multifunctional thin films for various usage such as passive, antireflection and transparent conductive films. First part of this paper introduces the mechanism of ALD process, in the rest of it, aluminum oxide (as passive and antireflection) and zinc oxide (as antireflection and transparent conductive) ALD thin films are presented. In the literature one can find reports on the use of the Al2O3 layer as passivating and ZnO layers as a transparent conductive oxide in diodes, polymeric and dye sensitized solar cells. In this article, the ALD layers were tested for their use in silicon solar cells, using their good electrical and optical properties. For examination of prepared thin films characteristics, following research methods were used: scanning electron microscope, atomic force microscope, X-ray diffractometer, ellipsometer, UV/VIS spectrometer and resistance measurements. By depositing a layer thickness of about 80 nm, the short-circuit current on the surface of the solar cell was increased three times while reducing the reflection of light. In turn, by changing the deposition temperature of the ZnO thin film, you can control its electrical properties while maintaining high transparency. The obtained results showed that the ALD method provide the ability to produce a high quality multifunctional thin films with the required properties.

scholarly journals Understanding the Resistive Switching Phenomena of Stacked Al/Al2O3/Al Thin Films from the Dynamics of Conductive Filaments

Complexity ◽  
2017 ◽  
Vol 2017 ◽  
pp. 1-10 ◽  
Author(s):  
Joel Molina-Reyes ◽  
Luis Hernandez-Martinez
Keyword(s):  
Resistive Switching ◽  
Atomic Layer ◽  
Memory Device ◽  
Switching Behavior ◽  
Processing Temperature ◽  
Force Microscopy ◽  
Atomic Force ◽  
Layer Deposition ◽  
Metal Insulator Metal ◽  
Switching Characteristics

We present the resistive switching characteristics of Metal-Insulator-Metal (MIM) devices based on amorphous Al2O3 which is deposited by Atomic Layer Deposition (ALD). A maximum processing temperature for this memory device is 300°C, making it ideal for Back-End-of-Line (BEOL) processing. Although some variations in the forming, set, and reset voltages (VFORM, VSET, and VRESET) are obtained for many of the measured MIM devices (mainly due to roughness variations of the MIM interfaces as observed after atomic-force microscopy analysis), the memristor effect has been obtained after cyclic I-V measurements. These resistive transitions in the metal oxide occur for both bipolar and unipolar conditions, while the IOFF/ION ratio is around 4–6 orders of magnitude and is formed at gate voltages of Vg<4 V. In unipolar mode, a gradual reduction in VSET is observed and is related to combined (a) incomplete dissolution of conductive filaments (made of oxygen vacancies and metal ions) which leaves some residuals and (b) thickening of chemically reduced Al2O3 during localized Joule heating. This is important because, by analyzing the macroscopic resistive switching behavior of this MIM structure, we could indirectly relate it to microscopic and/or nanoscopic phenomena responsible for the physical mechanism upon which most of these devices operate.

scholarly journals Исследование ультратонких сверхпроводящих пленок нитрида ниобия, полученных методом атомно-слоевого осаждения

2021 ◽  
Vol 91 (4) ◽  
pp. 672
Author(s):  
М.В. Шибалов ◽  
Н.В. Порохов ◽  
А.М. Мумляков ◽  
И.В. Трофимов ◽  
Г.Д. Дюдьбин ◽  
...  
Keyword(s):  
Transition Temperature ◽  
Sheet Resistance ◽  
Field Effect Transistors ◽  
Atomic Layer ◽  
Organic Precursor ◽  
Force Microscopy ◽  
Atomic Force ◽  
Layer Deposition ◽  
Metal Organic ◽  
Ar Gas

This publication presents a method for deposition of ultrathin superconducting NbNx films by atomic layer deposition enhanced by plasma with metal-organic precursor and a gas mixture of H2/Ar used as reactant. The obtained films characterized by measuring of sheet resistance, ellipsometry, atomic force microscopy, and superconducting characteristics measurements. The optimal parameters of the H2/Ar gas ratio was defined at which sheet resistance of NbNx films was minimal. A comparative analysis of sheet resistance of the obtained NbNx films performed. The dependence of the transition temperature to the superconducting state on the film thickness investigated. The transition temperature of 13.7 K and the critical current density of 0.7 MA/cm2 achieved. High film uniformity, precision control of the thickness and deposition temperature of 350°C makes it possible to use these films in the manufacture of field effect transistors and in functional devices for various purposes, working on the superconductivity effect.

scholarly journals Effect the Composition Ratio of Cobalt Oxide on the Structural and Optical Properties of Tin Oxide

2019 ◽  
Vol 24 (3) ◽  
Author(s):  
Ahmed K. Abass, ◽  
Sura A. Abd Al-Hassan
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Cobalt Oxide ◽  
Tin Oxide ◽  
Spray Pyrolysis Technique ◽  
Oxide Thin Film ◽  
Chemical Spray Pyrolysis ◽  
Force Microscopy ◽  
Atomic Force ◽  
Xrd Patterns

Tin oxide thin films were deposited on glass substrate at (400 ºC) by using chemical spray pyrolysis technique and its composed with cobalt oxide in different ratio. The structural, morphologic and optical properties of  thin films are investigated by: (XRD) X-Ray Diffraction, (AFM) Atomic Force Microscopy, (UV-Vis )Ultraviolet – Visible Spectroscopy. XRD patterns indicate that the structure of tin oxide thin film is tetragonal. All prepared films were nano materials as stated by Scherrer equation. It might have been found by AFM analysis, those surface roughness increase with increasing of cobalt ratio. By provision about Tauc plots, optical band gaps for thin                               

scholarly journals Cellulose-Inorganic Hybrids of Strongly Reduced Thermal Conductivity

2021 ◽  
Author(s):  
Panagiotis Spiliopoulos ◽  
Marie Gestranius ◽  
Chao Zhang ◽  
Ramin Ghiyasi ◽  
John Tomko ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Spin Coating ◽  
Cellulose Nanofibers ◽  
Atomic Layer ◽  
X Ray ◽  
Force Microscopy ◽  
Organic Hybrid ◽  
Atomic Force ◽  
Layer Deposition ◽  
Helium Ion

Abstract The employment of atomic layer deposition and spin coating techniques for preparing inorganic-organic hybrid multilayer structures of alternating ZnO-CNC layers was explored in this study. Helium ion microscopy and X-ray reflectivity showed the superlattice formation for the nanolaminate structures and atomic force microscopy established the efficient control of the CNCs surface coverage on the Al-doped ΖnO by manipulating the concentration of the spin coating solution. Thickness characterization of the hybrid structures was performed via both ellipsometry and X-ray reflectivity and the thermal conductivity was examined by time domain thermoreflectance technique. It appears that even the incorporation of a limited amount of CNCs between the ZnO laminates strongly suppresses the thermal conductivity. Even small, submonolayer amounts of CNCs worked as a more efficient insulating material than hydroquinone or cellulose nanofibers which have been employed in previous studies.

Investigation of electrical properties of peald-deposited Ti/Al2O3/Al/Si MIM capacitors

2021 ◽  
pp. 2140045
Author(s):  
Sumit Patil ◽  
Viral Barhate ◽  
Ashok Mahajan ◽  
Haoyu Xu ◽  
Mohammad Rasadujjaman ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Atomic Layer ◽  
Stable Phase ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Layer Deposition ◽  
Current Voltage ◽  
Different Temperatures ◽  
Mim Capacitors

MIM devices fabricated with 10-nm thickness of Al2O3 high-[Formula: see text] thin film deposited using plasma-enhanced atomic layer deposition (PEALD) system on Al-coated Si substrate were investigated. The structural, morphological and electrical properties of Ti/Al2O3/Al/Si MIM capacitors as-deposited and post-deposition annealed (PDA) at different temperatures were studied and compared. Al2O3 thin films were investigated using atomic force microscopy (AFM) and X-ray diffraction (XRD) and Ti/Al2O3/Al/Si MIM capacitors were characterized by current–voltage ([Formula: see text]–[Formula: see text] and capacitance–voltage ([Formula: see text]–[Formula: see text] measurements. The stable phase formation of Ti/Al2O3/Al/Si MIM capacitor provides the lowest leakage current density in the range of nA/cm2 for as-deposited and annealed films.

scholarly journals Atomic layer deposition of superparamagnetic ruthenium-doped iron oxide thin film

RSC Advances ◽  
2021 ◽  
Vol 11 (13) ◽  
pp. 7521-7526
Author(s):  
Aile Tamm ◽  
Aivar Tarre ◽  
Jekaterina Kozlova ◽  
Mihkel Rähn ◽  
Taivo Jõgiaas ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Iron Oxide ◽  
Atomic Layer Deposition ◽  
Coercive Force ◽  
Atomic Layer ◽  
Oxide Thin Film ◽  
Superparamagnetic Behaviour ◽  
Layer Deposition

In atomic layer deposited Ru-doped α-Fe2O3 thin films superparamagnetic behaviour of nanocrystallites is observed with the magnetic coercive force up to 3 kOe.

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