scholarly journals Obliquely Bideposited TiN Thin Film with Morphology-Dependent Optical Properties

Coatings ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 1418
Author(s):  
Yi-Jun Jen ◽  
Wei-Chieh Ma ◽  
Ting-Yen Lin

TiN thin films were obliquely bideposited with different subdeposit thicknesses. The morphology of the bideposited film was varied from a nano-zigzag array to a vertically grown columnar structure by reducing the subdeposit thickness. The principal index of refraction and extinction coefficient were obtained to explain the measured reflectance and transmittance spectra. The loss of the bideposited thin film decreased as the thickness of the subdeposit decreased. The principal indices for normal incidence were near or under unity, indicating the low reflection by the bideposited thin films. A TiN film with a subdeposit thickness of 3 nm demonstrated an average index of refraction of 0.83 and extinction coefficient of below 0.2 for visible wavelengths. The retrieved principal refractive indexes explained the anisotropic transmission and reflection. For most normal incident cases, the analysis offers the tunable anisotropic property of a TiN nanostructured film for multilayer design in the future.

2021 ◽  
Vol 9 (2) ◽  
pp. 46-50
Author(s):  
Muhanad A. Ahmed ◽  
Mohammed F. Mohammed Sabri ◽  
Wathiq R. Abed

In this paper, nanostructured silicon carbide (SiC) thin films are deposited onto glass substrate using pulsed laser deposition technique. Electrical and optical characterizations such as conductivity, resistivity, transmission, Seeback effect, absorption, absorption coefficient, energy band gap, and extinction coefficient as a function of photon energy, and the effect of thin films thickness on transmission are carried out to characterize the prepared samples. Results showed that the prepared SiC thin film is an n-type semiconductor with an indirect bandgap of ~3 eV, 448 nm cutoff wavelength, 3.4395 × 104 cm−1 absorption coefficient and 0.154 extinction coefficient. The surface morphology of the SiC thin films is studied using scanning electron microscope at a substrate temperature of 400 °C and it is found that the grain size of the prepared SiC thin film is about 30 nm. As such, the nano thin films optical and structural characteristics enable the films to be used as gases sensors in many optoelectronic devices such as the environment and ultraviolet photodiode.


2005 ◽  
Vol 495-497 ◽  
pp. 1371-1376
Author(s):  
Dong Young Sung ◽  
In Soo Kim ◽  
Min Gu Lee ◽  
No Jin Park ◽  
Bee Lyong Yang ◽  
...  

TiN thin films are widely used as a coating material due to their good mechanical and conductivity properties, high thermal properties, strong erosion and corrosion resistance. Also TiN has been used in Si devices as a diffusion barrier material for Al and Cu-based metallization. The uniform and dense structure of thin films is influenced by the texture of films. It was good to have uniform and dense structure and bad to have an open columnar structure in TiN thin films. Therefore, the property of diffusion barrier of the TiN films in semiconductor also is related to the texture and microstructure of TiN coated layer. In this study, the relationship between the texture and microstructure and the best diffusion barrier propertiy of TiN coated films (by PVD and MOCVD) on semiconductor devices (Cu/TiN/SiO2/Si layer) were investigated under different processing conditions and textures. The property of diffusion barrier for Cu of physical vapor deposited TiN thin films is better than that of metal organic chemical vapor deposited TiN thin films. Also the property of diffusion barrier for Cu of (111) textured TiN thin films is better than that of (200) textured TiN thin films.


2001 ◽  
Vol 15 (17n19) ◽  
pp. 745-748
Author(s):  
JAIME TORRES ◽  
JAIRO GIRALDO

A simple method is proposed to calculate optical constants from porous silicon (PS) thin films, out of the simulation of normal incidence reflection spectrums. In the optical system used in this model, PS one considers as a homogeneous uniform thin film when deposited upon a substrate with semi-infinite dimensions. The PS and Substrate refractive indexes are obtained using the Simple Harmonic Oscillator Model, proposed by Wemple and DiDomenico. In addition, the absorption coefficient and sample thickness are also be obtained. The model to calculate the optical constants of some samples prepared at different anodisation times is used.


1975 ◽  
Vol 53 (18) ◽  
pp. 1737-1742 ◽  
Author(s):  
J. H. Wohlgemuth ◽  
D. E. Brodie

A new method for determining the index of refraction from normal incidence reflection and transmission measurements has been developed. Several other methods are reviewed to explain why a new method is needed. The author's method used a thickness variational approach. For an accurate determination of n and k, the method requires normal incidence reflection and transmission measurements over a fairly broad spectral range for at least two different film thicknesses. These requirements are unavoidable for normal incidence methods.


1998 ◽  
Vol 13 (5) ◽  
pp. 1225-1229 ◽  
Author(s):  
U. C. Oh ◽  
Jung Ho Je ◽  
Jeong Y. Lee

The preferred orientation of the TiN film grown by sputter-deposition was studied by the cross-sectional TEM. The preferred orientation was changed from the (200) through the (110), and then finally to the (111) with the film thickness. The cross-sectional microstructure also shows that the film consists of three layers which are all columnar structure. The (111) preferred orientation was observed in the top layer, and the (110) in the middle layer, and finally the (200) in the bottom layer. It is very surprising that the (110) preferred orientation could be observed in a medium thickness region and there are two kinds of critical thicknesses. These results surely show the strong dependence of the change in the preferred orientation on the strain energy in TiN thin films.


1997 ◽  
Vol 476 ◽  
Author(s):  
Wei-Tsu Tseng ◽  
Li-Wen Chen ◽  
G.-C. Tu

AbstractVariations in stress and grain size of Ti- and TiN- capped Al thin films passivated by fluorinated silicon dioxide (SiOF) during repetitive thermal cycling are investigated. The amount of stress relaxation, elastic and plastic behavior of these thin film structures are compared. Ti and TiN cap layers strengthen the single Al film significantly while the presence of SiOF induces plastic deformation of metal layers. Less grain growth is associated with a dielectric passivated Al film. The penetration of fluorine into Al upon annealing can be reduced by a TiN barrier layer.


2005 ◽  
Vol 475-479 ◽  
pp. 1865-1868 ◽  
Author(s):  
Dong Young Sung ◽  
In Soo Kim ◽  
Min Gu Lee ◽  
Bee Lyong Yang ◽  
Jun Mo Yang ◽  
...  

The uniform and dense structure of thin films is influenced by the texture of films. It was good to have uniform and dense structure and bad to have an open columnar structure in TiN thin films. Therefore, the property of diffusion barrier of the TiN films in semiconductor also is related to the texture and microstructure of TiN coated layers. In this study, the relationships between the textures and microstructures and the properties of TiN films on semiconductor were investigated under different processing methods (PVD and MOCVD). The property of diffusion barrier of RF sputtered (PVD) TiN is better than that of metal organic chemical vapor deposited (MOCVD) TiN thin films. Also the property of diffusion barrier of PVD (111) textured TiN is better than that of PVD (100) textured TiN thin films on oxidized Si wafer.


2005 ◽  
Vol 901 ◽  
Author(s):  
Jingqun Xi ◽  
Jong Kyu Kim ◽  
Dexian Ye ◽  
Jasbir S. Juneja ◽  
T.-M. Lu ◽  
...  

AbstractThe refractive index contrast in dielectric multilayer structures, optical resonators and photonic crystals is an important figure of merit, which creates a strong demand for high quality thin films with a very low refractive index. SiO2 nano-rod layers with low refractive indices n = 1.08, the lowest ever reported in thin-film materials, is grown by oblique-angle e-beam deposition of SiO2 with vapor incident angle 85 degree. Scanning electron micrographs reveal a highly porous columnar structure of the low-refractive-index (low-n) film. The gap between the SiO2 nano-rods is ≤50 nm, i.e. much smaller than the wavelength of visible light, and thus sufficiently small to make scattering very small. Optical micrographs of the low-n film deposited on a Si substrate reveal a uniform specular film with no apparent scattering. The unprecedented low index of the SiO2 nano-rod layer is confirmed by both ellipsometry measurements and thin film interference measurements. A single-pair distributed Bragg reflector (DBR) employing the SiO2 nano-rod layer is demonstrated to have enhanced reflectivity, showing the great potential of low-n films for applications in photonic structures and devices.


Author(s):  
Abubakr Mahmoud Hamid ◽  
Hassan Wardi Hassan ◽  
Fatima Ahmed Osman

Solar energy is already has being widely successfully used in residential and industrial setting for thermal and electrical application such as space technology, communication, etc. I. Aims: The aim of this study the effect of the annealing temperature in improvement optical properties of titanium oxide nanostructure doped iron oxide for use in thin film. Study Design: The spray pyrolysis deposition method used for preparation the nanostructure material. Place and Duration of Study: This study was conducted in department of physics and department of materials sciences, Al-Neelain University, between January 2016 and January 2019.  Methodology: Thin films of Titanium Oxide (TiO2) doped Iron Oxide (Fe2O3) have been prepared by chemical spray pyrolysis deposition technique. A laboratory designed glass atomizer was used for spraying the aqueous solution. Which has an output nozzle about 1 mm. then film were deposited on preheated cleaned glass substrates at temperature of 400°C. we used different concentration to study optical parameters. A 1.5 g TiO2 powder of anatase structure doped with 1.5 g of Fe2O3 was mixed with 2 ml of ethanol and stirred using a magnetic stirrer for 30 minutes to form TiO2 paste to obtain the starting solution for deposition and spray time was 10 s and spray interval 2 min was kept constant. The carrier gas (filtered compressed air) was maintained at a pressure of 105 Nm-2, and distance between nozzle and substrate was about 30 cm ± 1 cm. Thickness of sample was measured using the weighting method and was found to be around 400nm. Optical transmittance and absorbance were record in wavelength range of (200-1100) nm using UV-Visible spectrophotometer (Shimadzu Company Japan). Results: The results obtained showed that the optical band gap decreased from 5.6eV before annealing to (3.9, 3.26, 3.24 and 3.27 eV) after annealing temperature at(450° – 500°) for TiO2:Fe2O3 thin films, this result refer to the broadening of  secondary levels that product by TiO2: doping to the Fe2O2thin films. Also the results showed the variation of refractive index with wavelength for different concentration after annealing temperature at (450° – 500°) of TiO2: Fe2O3 films from this figure, it is clear that n decrease with low concentration and increase with high concentration after annealing temperature that mean the density is decreased of this films. In addition the extinction coefficient of TiO2:Fe2O3 thin films recorded before annealing and with different concentration (1.1, 1.2, 1,5 and 1,6) and in the range of (300 – 1200) nm and at annealing temperature from (450° – 500°). It observed from that the extinction coefficient, decrease sharply with the increase of wavelength for all prepared films and all the sample after annealing is interference between them accept the sample before annealing is far from the other sample. Conclusion: The TiO2 thin film shows better result after annealing; By exposing temperature during annealing process degree at (450o- 500o) is found to be the best temperature for annealing TiO2 thin film. The study concluded that an annealing temperature Contributes to the improvement of optical properties related to increasing the efficiency of the solar cell, especially the refractive index, energy gap, extinction coefficient.


Sign in / Sign up

Export Citation Format

Share Document