scholarly journals White Phosphate Coatings Obtained on Steel from Modified Cold Phosphating Solutions

Coatings ◽  
2022 ◽  
Vol 12 (1) ◽  
pp. 70
Author(s):  
Evgeniy Rumyantsev ◽  
Varvara Rumyantseva ◽  
Viktoriya Konovalova
Keyword(s):  
Phase Composition ◽  
Room Temperature ◽  
X Ray Diffraction ◽  
Steel Product ◽  
Protective Properties ◽  
X Ray ◽  
Atomic Force ◽  
Phosphate Coatings ◽  
Average Grain Size ◽  
Microscope Images

The article presents a method for obtaining white phosphate coatings on steel by cold method. The deposition of protective phosphate coatings was carried out from solutions based on the preparation “Majef”, consisting of manganese and iron phosphates. To obtain phosphate films of white color, it is proposed to introduce zinc and calcium nitrates into phosphating solutions at the rate of 25–30 g/L. The surface of phosphate coatings was studied using the SolverP47-PRO atomic force microscope images, and the average grain size was determined. The structural and phase composition of phosphate coatings was been studied using X-ray diffraction analysis. The protective properties of phosphate coatings were estimated by corrosion rate indicators calculated from corrosion diagrams. Fine-crystalline uniform coatings were obtained from modified phosphating solutions at room temperature on steel. The white color of phosphate coatings is due to the increased content of phosphophyllite, hopeite, and parascholzite in their structural and phase composition. By applying protective phosphate coatings of white color on a steel product, corrosion can be slowed down by 4–4.5 times. However, white phosphate coatings are inferior in protective properties to unpainted coatings. The index of change in the mass of samples with white phosphate coatings because of corrosion is 0.371–0.41 g/(m2·h), and with unpainted coatings is 0.128 g/(m2·h).

Synthesis of CaWO4:(Eu3+,Tb3+) Thin Films by a Two-Step Method at Room Temperature

2013 ◽  
Vol 710 ◽  
pp. 170-173
Author(s):  
Lian Ping Chen ◽  
Yuan Hong Gao
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Composition ◽  
Room Temperature ◽  
Electrochemical Techniques ◽  
Luminescent Properties ◽  
X Ray Diffraction ◽  
Step Method ◽  
X Ray ◽  
Rare Earth Doped

It is hardly possible to obtain rare earth doped CaWO4thin films directly through electrochemical techniques. A two-step method has been proposed to synthesize CaWO4:(Eu3+,Tb3+) thin films at room temperature. X-ray diffraction, energy dispersive X-ray analysis, spectrophotometer were used to characterize their phase, composition and luminescent properties. Results reveal that (Eu3+,Tb3+)-doped CaWO4films have a tetragonal phase. When the ratio of n (Eu)/n (Tb) in the solution is up to 3:1, CaWO4:(Eu3+,Tb3+) thin film will be enriched with Tb element; on the contrary, when the ratio in the solution is lower than 1:4, CaWO4:(Eu3+,Tb3+) thin film will be enriched with Eu element. Under the excitation of 242 nm, sharp emission peaks at 612, 543, 489 and 589 nm have been observed for CaWO4:(Eu3+,Tb3+) thin films.

scholarly journals Photo-acoustic properties of nanoTiO2:Er

2016 ◽  
Vol 5 (4) ◽  
pp. 196
Author(s):  
R. Palomino-Merino ◽  
R. Lozada-Morales ◽  
J. Martínez-Juárez ◽  
G. Juárez-Díaz ◽  
J. Carmona-Rodriguez ◽  
...  
Keyword(s):  
Room Temperature ◽  
Sol Gel ◽  
Acoustic Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Average Grain Size ◽  
Electron Dispersion ◽  
Er Doped ◽  
Spectroscopy Optical

Nanocrystalline Er-doped TiO2 was prepared by sol-gel at room temperature. X-ray diffraction, photoacoustic spectroscopy (optical absorption), transmission electron microscopy (TEM), and electron dispersion microscopy (EDS) were carried out on both as-prepared and thermally-annealed (air at 700 ºC) samples, revealing the anatase crystalline phase of TiO2. The samples exhibit an average grain size from 38 to 5.1 nm, as the nominal concentration of Er varies from 0 % to 7 %. The photoacoustic spectra evidence the absorption edge at 300 nm attributed to TiO2, as well as several electronic transitions which are atomic energy absorption-line levels characteristics of Er.

Reactive Sputtering Growth and Characterizations of InN Thin Films on Si Substrates

2012 ◽  
Vol 545 ◽  
pp. 290-293
Author(s):  
Maryam Amirhoseiny ◽  
Hassan Zainuriah ◽  
Ng Shashiong ◽  
Mohd Anas Ahmad
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Nitrogen Gas ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force

We have studied the effects of deposition conditions on the crystal structure of InN films deposited on Si substrate. InN thin films have been deposited on Si(100) substrates by reactive radio frequency (RF) magnetron sputtering method with pure In target at room temperature. The nitrogen gas pressure, applied RF power and the distance between target and substrate were 2×10-2 Torr, 60 W and 8 cm, respectively. The effects of the Ar–N2 sputtering gas mixture on the structural properties of the films were investigated by using scanning electron microscope, energy-dispersive X-ray spectroscopy, atomic force microscopy and X-ray diffraction techniques.

MBE GROWN ZnSSe/ZnMgSSe MQW STRUCTURE FOR BLUE VCSEL

2007 ◽  
Vol 06 (05) ◽  
pp. 407-410 ◽  
Author(s):  
I. P. KAZAKOV ◽  
V. I. KOZLOVSKY ◽  
V. P. MARTOVITSKY ◽  
YA. K. SKASYRSKY ◽  
M. D. TIBERI ◽  
...  
Keyword(s):  
Room Temperature ◽  
Structure Characterization ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Optical Scanning ◽  
Atomic Force ◽  
Gaas Substrates ◽  
Two Phases

ZnSSe / ZnMgSSe MQW structures were grown by molecular beam epitaxy on GaAs substrates. The band gap of ZnMgSSe barriers was approximately 3 eV at room temperature. Cathodoluminescence, X-ray diffraction, optical, scanning electron beam, and atomic force microscopy were all used for structure characterization. Decay of the ZnMgSSe solid solution in at least two phases was observed. Improvement in the quality of the crystal lattice and surface morphology was achieved by mismatching the ZnMgSSe from the GaAs substrate by increasing the lattice period by 0.24%.

Deposition of Photoluminescent Nanocrystalline Silicon Films by SiF4-SiH4-H2 Plasmas

1996 ◽  
Vol 452 ◽  
Author(s):  
G. Cicala ◽  
G. Bruno ◽  
P. Capezzuto ◽  
L. Schiavulli ◽  
V. Capozzi ◽  
...  
Keyword(s):  
Grain Size ◽  
Porous Silicon ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Energy Gap ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
X Ray Diffraction ◽  
X Ray ◽  
Average Grain Size

AbstractVisible photoluminescence at 1.62 eV has been observed at room temperature from fluorinated and hydrogenated nanocrystalline silicon (nc-Si:H,F) produced in a typical plasma enhanced chemical vapor deposition system. The use of SiF4-SiH4-H2 mixture, because of the H2 dilution and the presence of SiF4, favours the amorphous - crystalline transition through the etching process of the amorphous phase. The x - ray diffraction measurements give an average grain size of about 100 Å. The presence of these nanocrystals shifts the absorption edge of the films towards higher energy. An energy gap of 2.12 eV is estimated, although the hydrogen content in the material is only 4.5 at. %. The temperature dependence of the photoluminescence behaves similarly to that of porous silicon.

Structural, Magnetic and Microwave Absorbing Properties of Nanosized NiXZn1-xFe2O4 Powders Synthesized by Sol-Gel Technique

2010 ◽  
Vol 148-149 ◽  
pp. 1144-1147
Author(s):  
Xiang Rong Zhu ◽  
Lin Feng Lu ◽  
Hong Lie Shen
Keyword(s):  
Room Temperature ◽  
Structural Characteristics ◽  
Sol Gel ◽  
Frequency Range ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Gel Technique ◽  
Soft Magnetism

NixZn1-xFe2O4 (x=0.4, 0.6) powders are synthesized by sol-gel technique. The X-ray diffraction (XRD) measurements show their polycrystalline spinel structural characteristics. Both XRD and Atomic Force Microscopy demonstrate the samples are nanosized. At room temperature typical soft magnetism is exhibited by the samples. The reflection attenuation resulting from microwave absorption would reach to 1.9 dBm over the frequency range 6 GHz - 10 GHz when the samples are paved on a 10 cm  10 cm square aluminum plate with a thickness of about 0.35 mm.

Microstructure and Magnetic Properties of Fe(C) and Fe(O) Nanoparticles

2001 ◽  
Vol 704 ◽  
Author(s):  
Xiang-Cheng Sun ◽  
N. Nava ◽  
J. Reyes-Gasga
Keyword(s):  
Room Temperature ◽  
Arc Discharge ◽  
Xrd Analysis ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Hrtem Observation ◽  
Average Grain Size ◽  
Fe Nanoparticles ◽  
Carbon Coated

AbstractTwo types of iron (Fe) nanoparticles, carbon-coated Fe nanoparticles (Fe(C)) and pure α-Fe nanoparticles that coated with oxide layers (Fe(O)), have been successfully synthesized using modified graphite arc-discharge method. X-ray diffraction (XRD), high-resolution transmission electron microscopy (HREM) and electron diffraction (SAED) analysis have been used to characterize these distinct structural morphologies. It is indicated that those two Fe nanoparticles have an average grain size of 15-20nm. The presence of carbon encapsulated α-Fe, γ-Fe and Fe3C phases are clearly identified by X-ray diffraction and SAED patterns in those Fe(C) particles. However, the evidence of pure α-Fe nanocrystal coated with oxide layer is also revealed by HR-TEM images and SAED patterns in these Fe(O) particles.Mössbauer spectra and hyperfine magnetic fields at room temperature for the assemblies of Fe(C) and Fe(O) nanoparticles further confirm their distinct nanophases that detected by XRD analysis and HRTEM observation. Specially, the assemblies of Fe(O) nanoparticles exhibit ferromagnetic properties at room temperature due to the stronger interparticle interaction and bigger magnetocrystalline anisotropy effects among these Fe(O) nanoparticles. Moreover, modified superparamagnetic relaxation is observed in the assemblies of Fe(C) nanoparticles, which is attributed to the nanocrystalline nature of the carbon-coated nanoparticles.

scholarly journals Structure, Dielectric and Multiferroic Properties of Bi0.85Nd0.15Fe0.98Zr0.02O3 in Ba and Ti Co-Doping

2021 ◽  
Author(s):  
Lizhu Zeng ◽  
Yuming Lu ◽  
Lujia Zhang ◽  
Xin Gong ◽  
Jianfeng Tang ◽  
...  
Keyword(s):  
Room Temperature ◽  
Oxygen Vacancies ◽  
Solid State Reaction Method ◽  
X Ray Diffraction ◽  
Conventional Solid State Reaction ◽  
Structure Transition ◽  
X Ray ◽  
Co Doping ◽  
Average Grain Size ◽  
Rhombohedral Perovskite Structure

Abstract Multiferroic (1- x)Bi0.85Nd0.15Fe0.98Zr0.02O3- xBaTiO3 (x = 0, 0.275, 0.3, 0.325, 0.35, 0.375, 0.4) ceramics were synthesized by the conventional solid state reaction method. X-ray diffraction studies confirm the phase transition from rhombohedral perovskite structure to pseudocubic structure with the introduction of BaTiO3. The results of the refinement indicate the BaTiO3 is successfully doped into the crystal lattice. The microstructure analysis shows that the average grain size increases with the introduction of BaTiO3. An increase in remanant polarization has been achieved at room temperature as the BaTiO3 concentration increasing. A greatly reduced leakage current density of about two orders of magnitude is observed in x = 0.375 (J = 2.4×10− 7 A/cm2) ceramic. The dielectric properties have been enhanced by the addition of BaTiO3, which is attributed to the reduction in Fe2+ ions and oxygen vacancies. Due to the grain effect and structure transition caused by the doping of BaTiO3, the magnetization reveals a slight decrease while the coercive field for x = 0.325 (Hc = 1785.8 Oe) increases to 6.4 times of the undoped ceramic.

Heteroepitaxial Growth of Epitaxial C60-Thin Films on Mica(001)

1994 ◽  
Vol 359 ◽  
Author(s):  
S. Henke ◽  
K.H. Thürer ◽  
S. Geier ◽  
B. Rauschenbach ◽  
B. Stritzker
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Substrate Temperature ◽  
Room Temperature ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Substrate Temperatures

ABSTRACTOn mica(001) thin C60-films are deposited by thermal evaporation at substrate temperatures from room temperature up to 225°C. The dependence of the structure and the epitaxial alignment of the thin C60-films on mica(001) on the substrate temperature and the film thickness up to 1.3 μm at a well-defined deposition rate (0.008 nm/s) is investigated by atomic force microscopy and X-ray diffraction. The shape and the size of the C60-islands, which have an influence on the film quality at larger film thicknesses, are sensitively dependent on the substrate temperature. At a film thickness of 200 nm the increase of the substrate temperature up to 225°C leads to smooth, completely coalesced epitaxial C60-thin films characterized by a roughness smaller than 1.5 nm, a mosaic spread Δω of 0.1° and an azimuthal alignment ΔΦ of 0.45°.

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