scholarly journals A 560 GHz Sub-Harmonic Mixer Using Half-Global Design Method

Electronics ◽  
2021 ◽  
Vol 10 (3) ◽  
pp. 234
Author(s):  
Bo Zhang ◽  
Yong Zhang ◽  
Liucheng Pan ◽  
Yu Li ◽  
Jianhang Cui ◽  
...  
Keyword(s):  
Design Method ◽  
Intermediate Frequency ◽  
Local Oscillator ◽  
Conversion Loss ◽  
Harmonic Mixer

In this paper, a 560 GHz terahertz sub-harmonic mixer using a new half-global design method is reported. This method combines the advantages of the subdivision design method and the global design method, and greatly enhances the abilities of the optimization of matching variables while retaining the portability of the unit circuit. When the local oscillator (LO) frequency was fixed with 3 mW power at 280 GHz, average up-conversion double sideband (DSB) conversion loss of 8 dB with intermediate frequency (IF) power of −5 dBm was achieved.

scholarly journals A Novel 183 GHz Solid-State Sub-Harmonic Mixer

Electronics ◽  
2020 ◽  
Vol 9 (1) ◽  
pp. 186 ◽  
Author(s):  
Guangyu Ji ◽  
Dehai Zhang ◽  
Jin Meng ◽  
Siyu Liu ◽  
Changfei Yao
Keyword(s):  
Solid State ◽  
Three Dimensional ◽  
Local Oscillator ◽  
Conversion Loss ◽  
Pass Filter ◽  
Low Pass Filter ◽  
Harmonic Mixer ◽  
Electromagnetic Model ◽  
Single Sideband ◽  
Rf Performance

This paper proposes a novel sub-harmonic mixing topology. Based on the proposed topology and the precise three-dimensional electromagnetic model of the Schottky barrier diode; a novel 183 GHz solid-state sub-harmonic mixer is designed and measured. By adding a compact low-pass filter near the ground of the mixer’s circuit, the effect on the mixer’s RF performance of the random error of the conductive adhesive in assembling is effectively decreased. The test results show that the optimal single-sideband conversion loss of the mixer is 8.1dB@183GHz when the local oscillator signal is 4mw@91GHz. In the RF bandwidth from 173 GHz to 191 GHz, the single-sideband conversion loss is less than −10.6 dB. At the same time, the RF port return loss is less than 9.8 dB.

6–12 GHz double-balanced image-reject mixer MMIC in 0.25 µm AlGaN/GaN technology

2015 ◽  
Vol 7 (3-4) ◽  
pp. 307-315 ◽  
Author(s):  
Marc van Heijningen ◽  
Jeroen A. Hoogland ◽  
Peter de Hek ◽  
Frank E. van Vliet
Keyword(s):  
Integrated Circuits ◽  
Intermediate Frequency ◽  
Local Oscillator ◽  
Input Power ◽  
Low Noise ◽  
Low Noise Amplifiers ◽  
Conversion Loss ◽  
Front End ◽  
Signal Amplifier ◽  
Measurement Results

The front-end circuitry of transceiver modules is slowly being updated from GaAs-based monolithic microwave integrated circuits (MMICs) to Gallium-Nitride (GaN). Especially GaN power amplifiers and T/R switches, but also low-noise amplifiers (LNAs), offer significant performance improvement over GaAs components. Therefore it is interesting to also explore the possible advantages of a GaN mixer to enable a fully GaN-based front-end. In this paper, the design-experiment and measurement results of a double-balanced image-reject mixer MMIC in 0.25 μm AlGaN/GaN technology are presented. First an introduction is given on the selection and dimensioning of the mixer core, in relation to the linearity and conversion loss. At the intermediate frequency (IF)-side of the mixer, an active balun has been used to compensate partly for the loss of the mixer. An on-chip local-oscillator (LO) signal amplifier has been incorporated so that the mixer can function with 0 dBm LO input power. After the discussion of the circuit design the measurement results are presented. The performance of the mixer core and passive elements has been demonstrated by measurements on a test-structure. The mixer MMIC measured conversion loss is <8 dB from 6 to 12 GHz, at 1 GHz IF and 0 dBm LO power. The measured image rejection is better than 30 dB.

scholarly journals A Wideband Subharmonic Mixer Incorporating Signal Interference Technique Based Isolation Circuit

2019 ◽  
Vol 9 (2) ◽  
pp. 132-136
Keyword(s):  
Intermediate Frequency ◽  
Local Oscillator ◽  
Signal Interference ◽  
Frequency Range ◽  
Conversion Loss ◽  
Large Signal ◽  
Third Order ◽  
Single Sideband ◽  
Down Conversion ◽  
Intercept Point

A broadband (8.7 GHz – 11.5 GHz) performing passive sub-harmonic down-conversion mixer using signal interference technique (SIT) is demonstrated, designed and reported in this paper. The local oscillator (LO) frequency is half of the radio frequency (RF) for the 2xsub-harmonic mixer architecture; therefore, for the RF lying in the range 8.7 GHz to 11.5 GHz, required LO frequency range is 4.25 GHz to 5.65 GHz with 0.2 GHz fixed intermediate frequency (IF). With a broadband operation, designed prototype shows single sideband down-conversion loss in the range 9.6 dB – 12.6 dB. Moreover, large-signal testing infers an adequate linear trait of the proposed design, showing -3 dBm and 11.32 dBm for the 1 dB compression point and third order input intercept point, respectively.

scholarly journals Design and Measurement of a 0.67 THz Biased Sub-Harmonic Mixer

Electronics ◽  
2020 ◽  
Vol 9 (1) ◽  
pp. 161
Author(s):  
Guangyu Ji ◽  
Dehai Zhang ◽  
Jin Meng ◽  
Siyu Liu ◽  
Changfei Yao
Keyword(s):  
Glass Substrate ◽  
Schottky Diodes ◽  
Local Oscillator ◽  
Center Frequency ◽  
Measured Signal ◽  
Quartz Glass Substrate ◽  
Conversion Loss ◽  
Side Band ◽  
Harmonic Mixer ◽  
Series Configuration

To effectively reduce the requirement of Local Oscillator (LO) power, this paper presents the design and measurement of a biased sub-harmonic mixer working at the center frequency of 0.67 THz in hybrid integration. Two discrete Schottky diodes were placed across the LO waveguide in anti-series configuration on a 50 μm thick quartz-glass substrate, and chip capacitors were not required. At the driven of 3 mW@335 GHz and 0.35 V, the mixer had a minimum measured Signal Side-Band (SSB) conversion loss of 15.3 dB at the frequency of 667 GHz. The typical conversion loss is 18.2 dB in the band of 650 GHz to 690 GHz.

A Resistive GaN-HEMT Mixer for a Cable Modem Operable up to 250°C for Downhole Communications

2017 ◽  
Vol 14 (1) ◽  
pp. 17-25 ◽  
Author(s):  
Jebreel M. Salem ◽  
Dong Sam Ha
Keyword(s):  
High Temperature ◽  
Oil And Gas ◽  
High Electron Mobility Transistor ◽  
Oil And Gas Industry ◽  
Intermediate Frequency ◽  
Local Oscillator ◽  
Heat Extraction ◽  
High Electron ◽  
Reliable Operation ◽  
Ambient Temperatures

It is necessary for the oil and gas industry to drill deeper due to decrease of easily accessible natural reserves. Temperatures of deep wells can exceed 210°C, and conventional cooling and heat extraction techniques are impractical in such a harsh environment. Reliable electronic designs that can sustain high temperature become necessary. This article presents a high-temperature passive radio frequency (RF) mixer for downhole communications. The proposed mixer is designed to upconvert or downconvert the incoming signal with low conversion loss (CL), high linearity, and reliable operation at the ambient temperature up to 250°C. GaN is a wide-bandgap technology that can provide a reliable operation at high ambient temperatures, and the proposed mixer adopts a commercial GaN high-electron-mobility transistor. Measurement results indicate that the proposed mixer achieves a CL of 7.1 dB at local oscillator (LO) power of 2.5 dBm for the downconversion from 230–253 to 97.5 MHz at 250°C and the input P1dB compression point lies at 5 dBm. The designed mixer also achieves 24.5 dB RF-to-intermediate frequency (IF) isolation and 28 dB LO-to-IF isolation at 250°C. The power dissipation of the mixer is virtually zero.

A Q/Ku-K band MMIC double-balanced subharmonic diode ring mixer for satellite communications in GaAs pHEMT technology

2014 ◽  
Vol 7 (2) ◽  
pp. 107-113 ◽  
Author(s):  
Davide Resca ◽  
Rafael Cignani ◽  
Corrado Florian ◽  
Andrea Biondi ◽  
Francesco Scappaviva
Keyword(s):  
Frequency Conversion ◽  
Satellite Communications ◽  
Local Oscillator ◽  
Conversion Loss ◽  
Balanced Structure ◽  
Buffer Amplifier ◽  
K Band

A MMIC double-balanced subharmonic diode ring mixer was designed for broadband satellite communications exploiting a GaAs pHEMT process. The circuit implements the frequency conversion from Q (43.5–50 GHz) to Ku-K band (17–21.5 GHz). Besides the RF, LO, and IF baluns, the MMIC integrates a buffer amplifier for the local oscillator signal, which is designed between X and Ku bands (11–16.5 GHz), due to the subharmonic operation. The mixer measured conversion loss is between 8 and 12 dB along the bandwidth, with an LO power of 9 dBm. The input p1 dB and IP3 are 2 and 15 dBm, respectively. The balanced structure ensures an LO and 2 × LO leakages at the IF port lower than −25 and −35 dBm, respectively. Other spurious remain below −67 dBc. The chip dimensions are 2.4 × 2.4 mm2.

scholarly journals High gain and Low power Up conversion Mixer for Wireless LAN Applications

2019 ◽  
pp. 179-185
Author(s):  
Ananda M ◽  
A B Kalpana
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Wireless Lan ◽  
Intermediate Frequency ◽  
Local Oscillator ◽  
High Gain ◽  
Conversion Gain ◽  
Third Order ◽  
Voltage Conversion ◽  
Intercept Point

This work aims an efficient RF Up-Conversion Mixer at Intermediate frequency of 100MHz and Local oscillator frequency of 2.3GHz. The proposed RF Up-Conversion Mixer exhibited better performance in terms of parameter like conversion gain and power consumption. The Simulation of Up-Conversion Mixer shows that the results of voltage conversion gain with LO power at 0dB is 5dB, at 5dB is 4.9dB, and at 10dB is 4.7dB. The power consumption of proposed design is 6mW. The 1dB compression point is -5.43dBm and third order intercept point is 10.53dBm.

scholarly journals Design of 300 GHz Combined Doubler/Subharmonic Mixer Based on Schottky Diodes with Integrated MMIC Based Local Oscillator

Electronics ◽  
2020 ◽  
Vol 9 (12) ◽  
pp. 2112
Author(s):  
José M. Pérez-Escudero ◽  
Carlos Quemada ◽  
Ramón Gonzalo ◽  
Iñigo Ederra
Keyword(s):  
State Of The Art ◽  
Schottky Diodes ◽  
Noise Temperature ◽  
Local Oscillator ◽  
The State ◽  
Experimental Characterization ◽  
Conversion Loss ◽  
Equivalent Noise Temperature ◽  
Factor Technique

In this paper the design and experimental characterization of a combined doubler-subharmonic mixer based on Schottky diodes which uses a 75 GHz MMIC based local oscillator is presented. This solution integrates in the same substrate the doubler and the mixer, which share the same metallic packaging with the local oscillator. The prototype has been fabricated and measured. For characterization, the Y-Factor technique has been used and the prototype yields a best conversion loss and equivalent noise temperature of 11 dB and 1976 K, respectively, at 305 GHz. This performance is close to the state of the art, and shows the potential of this approach, which allows a significant reduction in terms of size and volume.

Télémètre à détection coherente avec un laser CO2 à ondes entretenues : étude et conception

1983 ◽  
Vol 61 (2) ◽  
pp. 318-331 ◽  
Author(s):  
Denis Vincent ◽  
Gabriel Otis
Keyword(s):  
Detection System ◽  
Signal To Noise Ratio ◽  
Optical Power ◽  
Experimental System ◽  
Intermediate Frequency ◽  
Local Oscillator ◽  
Heterodyne Detection ◽  
Signal To Noise ◽  
Noise Ratio ◽  
Rotating Target

We performed a theoretical and experimental study of a 10.6 μm heterodyne detection system with nonlinear postdetection. A single laser serves as both transmitter and local oscillator; the intermediate frequency is given by the Doppler effect due to a rotating target. An electrooptic crystal modulates the amplitude of the laser beam at a frequency of 15 kHz; a synchronous voltmeter measures the return signal after the nonlinear element. Values of the signal-to-noise ratio with respect to incident optical power agree with the results of the theoretical model. In particular, experimentally measured target-induced frequency spreading effects on the signal-to-noise ratio correspond to the predictions of the model. We also describe an experimental system.

A 1.2 V 15–32 GHz low-power single-balanced gate mixer with a miniature rat-race hybrid

2012 ◽  
Vol 4 (4) ◽  
pp. 455-461
Author(s):  
Chung-Chun Chen ◽  
Chun-Hsien Lien ◽  
Hen-Wai Tsao ◽  
Huei Wang
Keyword(s):  
Power Consumption ◽  
Design Procedure ◽  
Local Oscillator ◽  
Cmos Technology ◽  
Conversion Gain ◽  
Conversion Loss ◽  
Power Budget ◽  
Digital Cmos ◽  
Chip Area ◽  
Dc Power

A 15–32 GHz miniature single-balanced gate mixer is proposed and analyzed. It achieves a smaller chip area with acceptable conversion gain and port-to-port isolation. In addition, the design procedure is described in detail. This mixer, fabricated in 90 nm digital CMOS technology, demonstrates a measured conversion loss of 1 dB and higher than 30 dB RF-to-LO port isolation from 17 to 32 GHz, at a local oscillator (LO) driver power of −4.3 dBm. The total dc power consumption is only 6 mW from a 1.2 V supply, including output buffer. The low dc power consumption and LO driver power reduce the power budget, and the proposed miniature rat-race hybrid facilitates integration in a receiver.

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