scholarly journals A Surface-Potential-Based Analytical I-V Model of Full-Depletion Single-Gate SOI MOSFETs

Electronics ◽  
2019 ◽  
Vol 8 (7) ◽  
pp. 785
Author(s):  
Chuanzhong Xu ◽  
Fei Yu ◽  
Gongyi Huang ◽  
Wanling Deng ◽  
Xiaoyu Ma ◽  
...  
Keyword(s):  
Surface Potential ◽  
Numerical Data ◽  
Drain Current ◽  
Absolute Error ◽  
Silicon On Insulator ◽  
Explicit Calculation ◽  
Great Promise ◽  
Maximum Absolute Error ◽  
Computation Efficiency ◽  
Full Depletion

A surface-potential-based analytical I-V model of single-gate (SG) silicon-on-insulator (SOI) MOSFETs in full-depletion (FD) mode is proposed and compared with numerical data and Khandelwal’s experimental results. An explicit calculation scheme of surface potential, processing high computation accuracy and efficiency, is demonstrated according to the derivation of the coupling relation between surface potential and back-channel potential. The maximum absolute error decreases into 10−7 V scale, and computation efficiency is improved substantially compared with numerical iteration. Depending on the surface potential, the drain current is derived in closed-form and validated by Khandelwal’s experimental data. High computation accuracy and efficiency suggest that this analytical I-V model displays great promise for SOI device optimizations and circuit simulations.

scholarly journals Performance analysis of dual material junction accumulation mode tri gate junctionless SOI FET: Modeling and Simulation

2021 ◽  
Author(s):  
Mrinmoy Goswami ◽  
Ankush Chattopadhyay ◽  
Chayanika Bose
Keyword(s):  
Surface Potential ◽  
Drain Current ◽  
Silicon On Insulator ◽  
Short Channel ◽  
Accumulation Mode ◽  
Physical Constraints ◽  
High K ◽  
Channel Effects ◽  
High K Dielectric ◽  
Dual Material

Abstract The paper illustrates the performance of Tri-Gate (TG) Dual Material (DM) SOI (Silicon on Insulator) Junctionless (JL) FET operating in Junction Accumulation Mode (JAM). An analytical model is developed to evaluate its performance. The device is also simulated using Silvaco device simulator. Both the analytical and simulation results are compared and found to match closely. Quasi 3-D modeling approach is adopted here to determine the surface potential of the above device. In this technique, the entire 3-D device is segregated into two 2-D devices with certain physical constraints. These 2-D devices are then analyzed separately to obtain the surface potentials, which are added together using suitable multiplication factors to get the surface potential of the 3-D device. This surface potential is, in turn, used to model the threshold voltage, sub-threshold drain current ( I d,sub ) and the drain induced barrier lowering (DIBL). The proposed device configuration reduces the I OFF significantly and offers excellent immunity to SCEs. The response of the proposed device is studied for the variations of certain device parameters, such as, thickness of High- K dielectric layer in stack gate, channel doping, and the workfunctions as well as lengths of the gate metals. Such study will lead to turn the proposed device immune to short channel effects through proper choice of various parameters.

scholarly journals A note on precision-preserving compression of scientific data

2021 ◽  
Vol 14 (1) ◽  
pp. 377-389
Author(s):  
Rostislav Kouznetsov
Keyword(s):  
Numerical Data ◽  
Absolute Error ◽  
Integral Characteristic ◽  
Lossy Compression ◽  
Scientific Data ◽  
Maximum Absolute Error ◽  
Essential Information ◽  
Network Bandwidth ◽  
Point Data ◽  
Multipoint Statistics

Abstract. Lossy compression of scientific data arrays is a powerful tool to save network bandwidth and storage space. Properly applied lossy compression can reduce the size of a dataset by orders of magnitude while keeping all essential information, whereas a wrong choice of lossy compression parameters leads to the loss of valuable data. An important class of lossy compression methods is so-called precision-preserving compression, which guarantees that a certain precision of each number will be kept. The paper considers statistical properties of several precision-preserving compression methods implemented in NetCDF Operators (NCO), a popular tool for handling and transformation of numerical data in NetCDF format. We compare artifacts resulting from the use of precision-preserving compression of floating-point data arrays. In particular, we show that a popular Bit Grooming algorithm (default in NCO until recently) has suboptimal accuracy and produces substantial artifacts in multipoint statistics. We suggest a simple implementation of two algorithms that are free from these artifacts and have double the precision. One of them can be used to rectify the data already processed with Bit Grooming. We compare precision trimming for relative and absolute precision to a popular linear packing (LP) method and find out that LP has no advantage over precision trimming at a given maximum absolute error. We give examples when LP leads to an unconstrained error in the integral characteristic of a field or leads to unphysical values. We analyze compression efficiency as a function of target precision for two synthetic datasets and discuss precision needed in several atmospheric fields. Mantissa rounding has been contributed to NCO mainstream as a replacement for Bit Grooming. The Appendix contains code samples implementing precision trimming in Python3 and Fortran 95.

An Analytical Modeling and Performance Analysis of Graded Work Function Gate Recessed Channel SOI-MOSFET

2019 ◽  
Vol 9 (4) ◽  
pp. 504-511
Author(s):  
Sikha Mishra ◽  
Urmila Bhanja ◽  
Guru Prasad Mishra
Keyword(s):  
Analytical Model ◽  
Surface Potential ◽  
Threshold Voltage ◽  
Silicon On Insulator ◽  
Junction Depth ◽  
Short Channel ◽  
Soi Mosfet ◽  
Minimum Surface ◽  
Recessed Channel ◽  
The Impact

Introduction: A new analytical model is designed for Workfunction Modulated Rectangular Recessed Channel-Silicon On Insulator (WMRRC-SOI) MOSFET that considers the concept of groove gate and implements an idea of workfunction engineering. Methods: The impact of Negative Junction Depth (NJD) and oxide thickness (tox) are analyzed on device performances such as Sub-threshold Slope (SS), Drain Induced Barrier Lowering (DIBL) and threshold voltage. Results: The results of the proposed work are evaluated with the Rectangular Recessed Channel-Silicon On Insulator (RRC-SOI) MOSFET keeping the metal workfunction constant throughout the gate region. Furthermore, an analytical model is developed using 2D Poisson’s equation and threshold voltage is estimated in terms of minimum surface potential. Conclusion: In this work, the impact of Negative Junction Depth (NJD) on minimum surface potential and the drain current are also evaluated. It is observed from the analysis that the analog switching performance of WMRRC-SOI MOSFET surpasses RRC-SOI MOSFET in terms of better driving capability, high Ion/Ioff ratio, minimized Short Channel Effects (SCEs) and hot carrier immunity. Results are simulated using 2D Sentaurus TCAD simulator for validation of the proposed structure.

Error Compensation Techniques for Fixed-Width Array Multiplier Design — A Technical Survey

2016 ◽  
Vol 26 (03) ◽  
pp. 1730003 ◽  
Author(s):  
S. Balamurugan ◽  
P. S. Mallick
Keyword(s):  
Error Compensation ◽  
Absolute Error ◽  
Mean Square ◽  
Maximum Absolute Error ◽  
Comprehensive Review ◽  
Related Research ◽  
Error Formula ◽  
Error Metrics ◽  
Array Multiplier ◽  
Future Work

This paper provides a comprehensive review of various error compensation techniques for fixed-width multiplier design along with its applications. In this paper, we have studied different error compensation circuits and their complexities in the fixed-width multipliers. Further, we present the experimental results of error metrics, including normalized maximum absolute error [Formula: see text], normalized mean error [Formula: see text] and normalized mean-square error [Formula: see text] to evaluate the accuracy of fixed-width multipliers. This survey is intended to serve as a suitable guideline and reference for future work in fixed-width multiplier design and its related research.

Analytical surface-potential-based drain current model for amorphous InGaZnO thin film transistors

2013 ◽  
Vol 114 (18) ◽  
pp. 184502 ◽  
Author(s):  
A. Tsormpatzoglou ◽  
N. A. Hastas ◽  
N. Choi ◽  
F. Mahmoudabadi ◽  
M. K. Hatalis ◽  
...  
Keyword(s):  
Thin Film ◽  
Surface Potential ◽  
Thin Film Transistors ◽  
Current Model ◽  
Drain Current ◽  
Amorphous Ingazno

Spatial Dynamic Analysis of a Mangeove Patch Based on Unmanned Aerial Vehicle: A Case Study in Pear Bay in Guangxi, China

2021 ◽  
Author(s):  
Xin Lin ◽  
Chungan Li ◽  
Mei Zhou ◽  
Wenhai Liang ◽  
Biao Li
Keyword(s):  
Unmanned Aerial Vehicle ◽  
Spatial Dynamics ◽  
Absolute Error ◽  
Maximum Error ◽  
Canopy Height ◽  
Accurate Information ◽  
Maximum Absolute Error ◽  
Patch Area ◽  
Maximum Increase ◽  
Aerial Vehicle

Abstract This study investigated the short-term spatial variability of an mangrove patch, located in the Pearl Bay in Guangxi, China. Unmanned aerial vehicle (UAV) imagery covering the period from March 2015 to October 2017 were used and the following models were developed: two annual ultra-high resolution spatial resolution digital orthophoto maps (DOMs), two digital elevation models (DEMs), two digital surface models (DSMs), two canopy height models (CHMs), and a canopy height difference model (d-CHM). Using these models, the spatial dynamics of the extent and canopy height of the patch were analyzed. The resolution of the DOMs was 0.1 m, with an average geometrical error of 0.17 m and a maximum error of 0.44 m. The resolutions of DEMs, DSMs, CHMs, d-CHM were all 1 m. The average elevation errors of CHM in 2015 and 2017 were 0.002 m and -0.001 m, respectively, with maximum absolute errors of 0.034 m and 0.030 m, respectively. The average elevation error of d-CHM was -0.003 m and the maximum absolute error was 0.036 m, and the data quality were rated as good. From 2015 to 2017, the area of the mangrove patch increased from 8.16 ha to 8.79 ha, with an average annual increase of 3.7%. Specifically, the areas of expansion, shrinkage, and maximum seaward expansion were 6356 m2, 19 m2, and 24 m, respectively. The driving factor for the variability was natural processes. Stand canopy height exhibited a particular trend of decrease from northwest to southeast (horizontal; parallel to the seawall) and from the land to the sea (vertically; perpendicular to the seawall). From 2015 to 2017, 88.2% of the patch area showed increased canopy height, with an average increase of 0.78 m and a maximum increase of 3.2 m. In contrast, 11.8% of the patch area showed decreased canopy height with a maximum decrease of 3.1 m. The main reason for the decrease in canopy height was the death of trees caused by serious insect plagues. On the other hand, the reason for the increase in height could be attributed to the natural growth of mangrove trees, but further studies are required to verify the cause. UAV remote sensing has an incomparable advantage over traditional methods in that it provides extremely detailed and highly accurate information for in-depth study of the spatial evolution of mangrove patches, which would significantly contribute towards the protection and management of mangroves.

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