scholarly journals Stress Impact of the Annealing Procedure of Cu-Filled TSV Packaging on the Performance of Nano-Scaled MOSFETs Evaluated by an Analytical Solution and FEA-Based Submodeling Technique

Materials ◽  
2021 ◽  
Vol 14 (18) ◽  
pp. 5226
Author(s):  
Pei-Chen Huang ◽  
Chang-Chun Lee
Keyword(s):  
Analytical Solution ◽  
Silicon Germanium ◽  
Lattice Mismatch ◽  
Oxide Semiconductor ◽  
Element Analysis ◽  
Stress Solution ◽  
The Difference ◽  
Field Transistor ◽  
Interconnect Systems ◽  
P Type

Stress-induced performance change in electron packaging architecture is a major concern when the keep-out zone (KOZ) and corresponding integration density of interconnect systems and transistor devices are considered. In this study, a finite element analysis (FEA)-based submodeling approach is demonstrated to analyze the stress-affected zone of through-silicon via (TSV) and its influences on a planar metal oxide semiconductor field transistor (MOSFET) device. The feasibility of the widely adopted analytical solution for TSV stress-affected zone estimation, Lamé radial stress solution, is investigated and compared with the FEA-based submodeling approach. Analytic results reveal that the Lamé stress solution overestimates the TSV-induced stress in the concerned device by over 50%, and the difference in the estimated results of device performance between Lamé stress solution and FEA simulation can reach 22%. Moreover, a silicon–germanium-based lattice mismatch stressor is designed in a silicon p-type MOSFET, and its effects are analyzed and compared with those of TSV residual stress. The S/D stressor dominates the stress status of the device channel. The demonstrated FEA-based submodeling approach is effective in analyzing the stress impact from packaging and device-level components and estimating the KOZ issue in advanced electronic packaging.

Performance Variation of Nano-Scaled Devices in 3D-IC Packaging Architecture Induced by TSV Residual Stress

2019 ◽  
Author(s):  
Chang-Chun Lee ◽  
Pei-Chen Huang ◽  
Chi-Wei Wang
Keyword(s):  
Residual Stress ◽  
Integrated Circuit ◽  
Three Dimensional ◽  
Oxide Semiconductor ◽  
Model Complexity ◽  
Element Analysis ◽  
Fea Model ◽  
Three Dimensional Integrated Circuit ◽  
P Type ◽  
Silicon Based

Abstract Through-silicon via (TSV) technique, is widely adopted as the vertical interconnection technology of three-dimensional integrated circuit packaging architecture. However, fabrication process-induced residual stress occurred in TSV during annealing and introduced the subsequent thermal–mechanical stress into silicon-based interposer. Aforementioned residual stress will affect the performance and electric stability of p-type metal-oxide-semiconductor field-effect transistor (pMOSFET) located around TSV. Accordingly, this study is focused on the influences of TSV layout with intrinsic residual stress on concerned pMOSFET performance. Process-oriented finite element analysis (FEA) is performed to simulate stress distribution of pMOSFET when concerned device channel region was affected by TSV residual stress and embedded SiGe alloy. To conquer the difficulty of FEA construction on TSV and pMOSFET with significant scale mismatch in same FEA model, the global–local submodeling technology is adopted to manage the balance between model complexity and numerical convergence. The residual stress magnitude effect of different designed TSV diameter on concerned channel stress components is extracted to estimate its influence on pMOSFET with scaled gate width. The presented results indicated that increased TSV residual stress could obviously reduce performance of concerned device. It should be noted that the S/D stressor remarkably dominated mobility gain of strained pMOSFET.

TEM study of Cosi2 formation via annealing of Co-Ti bilayers on Si

1995 ◽  
Vol 53 ◽  
pp. 464-465
Author(s):  
N. David Theodore ◽  
Andre Vantomme ◽  
Peter Crazier
Keyword(s):  
Thermal Instability ◽  
Lattice Mismatch ◽  
Field Effect Transistors ◽  
Contact Layer ◽  
Interface Roughness ◽  
Oxide Semiconductor ◽  
Surface Layers ◽  
Silicide Layer ◽  
Small Lattice ◽  
Buried Layers

Contact is typically made to source/drain regions of metal-oxide-semiconductor field-effect transistors (MOSFETs) by use of TiSi2 or CoSi2 layers followed by AI(Cu) metal lines. A silicide layer is used to reduce contact resistance. TiSi2 or CoSi2 are chosen for the contact layer because these silicides have low resistivities (~12-15 μΩ-cm for TiSi2 in the C54 phase, and ~10-15 μΩ-cm for CoSi2). CoSi2 has other desirable properties, such as being thermally stable up to >1000°C for surface layers and >1100°C for buried layers, and having a small lattice mismatch with silicon, -1.2% at room temperature. During CoSi2 growth, Co is the diffusing species. Electrode shorts and voids which can arise if Si is the diffusing species are therefore avoided. However, problems can arise due to silicide-Si interface roughness (leading to nonuniformity in film resistance) and thermal instability of the resistance upon further high temperature annealing. These problems can be avoided if the CoSi2 can be grown epitaxially on silicon.

scholarly journals Ripeness Prediction of Postharvest Kiwifruit Using a MOS E-Nose Combined with Chemometrics

Sensors ◽  
2019 ◽  
Vol 19 (2) ◽  
pp. 419 ◽  
Author(s):  
Dongdong Du ◽  
Jun Wang ◽  
Bo Wang ◽  
Luyi Zhu ◽  
Xuezhen Hong
Keyword(s):  
Prediction Models ◽  
Extraction Methods ◽  
Oxide Semiconductor ◽  
Soluble Solids ◽  
Support Vector ◽  
Least Squares Regression ◽  
Accuracy Rate ◽  
Linear Discriminant ◽  
The Difference ◽  
Ripe Stage

Postharvest kiwifruit continues to ripen for a period until it reaches the optimal “eating ripe” stage. Without damaging the fruit, it is very difficult to identify the ripeness of postharvest kiwifruit by conventional means. In this study, an electronic nose (E-nose) with 10 metal oxide semiconductor (MOS) gas sensors was used to predict the ripeness of postharvest kiwifruit. Three different feature extraction methods (the max/min values, the difference values and the 70th s values) were employed to discriminate kiwifruit at different ripening times by linear discriminant analysis (LDA), and results showed that the 70th s values method had the best performance in discriminating kiwifruit at different ripening stages, obtaining a 100% original accuracy rate and a 99.4% cross-validation accuracy rate. Partial least squares regression (PLSR), support vector machine (SVM) and random forest (RF) were employed to build prediction models for overall ripeness, soluble solids content (SSC) and firmness. The regression results showed that the RF algorithm had the best performance in predicting the ripeness indexes of postharvest kiwifruit compared with PLSR and SVM, which illustrated that the E-nose data had high correlations with overall ripeness (training: R2 = 0.9928; testing: R2 = 0.9928), SSC (training: R2 = 0.9749; testing: R2 = 0.9143) and firmness (training: R2 = 0.9814; testing: R2 = 0.9290). This study demonstrated that E-nose could be a comprehensive approach to predict the ripeness of postharvest kiwifruit through aroma volatiles.

scholarly journals Decoration of CuO NWs Gas Sensor with ZnO NPs for Improving NO2 Sensing Characteristics

Sensors ◽  
2021 ◽  
Vol 21 (6) ◽  
pp. 2103 ◽  
Author(s):  
Tae-Hee Han ◽  
So-Young Bak ◽  
Sangwoo Kim ◽  
Se Hyeong Lee ◽  
Ye-Ji Han ◽  
...  
Keyword(s):  
Gas Sensor ◽  
Gas Sensors ◽  
Sol Gel ◽  
Oxide Semiconductor ◽  
Zno Nps ◽  
X Ray ◽  
Semiconductor Gas Sensor ◽  
Initial Resistance ◽  
P Type ◽  
Sensing Characteristics

This paper introduces a method for improving the sensitivity to NO2 gas of a p-type metal oxide semiconductor gas sensor. The gas sensor was fabricated using CuO nanowires (NWs) grown through thermal oxidation and decorated with ZnO nanoparticles (NPs) using a sol-gel method. The CuO gas sensor with a ZnO heterojunction exhibited better sensitivity to NO2 gas than the pristine CuO gas sensor. The heterojunction in CuO/ZnO gas sensors caused a decrease in the width of the hole accumulation layer (HAL) and an increase in the initial resistance. The possibility to influence the width of the HAL helped improve the NO2 sensing characteristics of the gas sensor. The growth morphology, atomic composition, and crystal structure of the gas sensors were analyzed using field-emission scanning electron microscopy (FE-SEM), energy-dispersive X-ray spectroscopy, and X-ray diffraction, respectively.

Finite Element Analysis of Creep Damage Behavior Near the Cavity on Bimaterial Interface

2006 ◽  
Vol 324-325 ◽  
pp. 951-954 ◽  
Author(s):  
Qing Min Yu ◽  
Zhu Feng Yue ◽  
Yong Shou Liu
Keyword(s):  
Finite Element ◽  
Elastic Moduli ◽  
Elastic Stress ◽  
Creep Damage ◽  
Ductile Material ◽  
Bimaterial Interface ◽  
Modulus Ratio ◽  
Element Analysis ◽  
Damage Law ◽  
The Difference

Fracture along an interface between materials plays a major role in failure of material. In this investigation, finite element calculations with Kachanov–Rabotnov damage law were carried out to study the creep damage distribution near the interface cavity in bimaterial specimens. The specimens with central hole were divided into three types. The material parameters of K-R law used in this paper were chosen for a brittle material and ductile material. All calculations were performed under four load cases. Due to the difference between elastic moduli of the bounded materials, the elastic stress field as a function of the Young’s modulus ratio (R=E1/E2) was determined. At the same time, the influence of model type on elastic stress distribution near the cavity was considered. Under the same conditions, the material with larger modulus is subjected to larger stress. The creep damage calculations show that the location of the maximum damage is different for each model. The distributions of creep damage for all three models are dependent on the material properties and load cases.

scholarly journals Dynamic Analysis of Honeycomb Sandwich Beam with Multiple Debonds

2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
B. Saraswathy ◽  
R. Ramesh Kumar ◽  
Lalu Mangal
Keyword(s):  
Analytical Solution ◽  
Transient Analysis ◽  
Sandwich Beam ◽  
Beam Theory ◽  
Beam Length ◽  
Honeycomb Core ◽  
Element Analysis ◽  
Fast Fourier Transform Analysis ◽  
Honeycomb Sandwich ◽  
Nonlinear Transient

Analytical formulation for the evaluation of frequency of CFRP sandwich beam with debond, following the split beam theory, generally underestimates the stiffness, as the contact between the honeycomb core and the skin during vibration is not considered in the region of debond. The validation of the present analytical solution for multiple-debond size is established through 3D finite element analysis, wherein geometry of honeycomb core is modeled as it is, with contact element introduced in the debond region. Nonlinear transient analysis is followed by fast Fourier transform analysis to obtain the frequency response functions. Frequencies are obtained for two types of model having single debond and double debond, at different spacing between them, with debond size up to 40% of beam length. The analytical solution is validated for a debond length of 15% of the beam length, and with the presence of two debonds of same size, the reduction in frequency with respect to that of an intact beam is the same as that of a single-debond case, when the debonds are well separated by three times the size of debond. It is also observed that a single long debond can result in significant reduction in the frequencies of the beam than multiple debond of comparable length.

Low-Temperature LPCVD MEMS Technologies

2002 ◽  
Vol 729 ◽  
Author(s):  
Roger T. Howe ◽  
Tsu-Jae King
Keyword(s):  
Silicon Germanium ◽  
Polycrystalline Silicon ◽  
Rf Mems ◽  
Sige Layer ◽  
Copper Metallization ◽  
Si Films ◽  
P Type ◽  
Mems Process ◽  
Post Deposition

AbstractThis paper describes recent research on LPCVD processes for the fabrication of high-quality micro-mechanical structures on foundry CMOS wafers. In order to avoid damaging CMOS electronics with either aluminum or copper metallization, the MEMS process temperatures should be limited to a maximum of 450°C. This constraint rules out the conventional polycrystalline silicon (poly-Si) as a candidate structural material for post-CMOS integrated MEMS. Polycrystalline silicon-germanium (poly-SiGe) alloys are attractive for modular integration of MEMS with electronics, because they can be deposited at much lower temperatures than poly-Si films, yet have excellent mechanical properties. In particular, in-situ doped p-type poly-SiGe films deposit rapidly at low temperatures and have adequate conductivity without post-deposition annealing. Poly-Ge can be etched very selectively to Si, SiGe, SiO2 and Si3N4 in a heated hydrogen peroxide solution, and can therefore be used as a sacrificial material to eliminate the need to protect the CMOS electronics during the MEMS-release etch. Low-resistance contact between a structural poly-SiGe layer and an underlying CMOS metal interconnect can be accomplished by deposition of the SiGe onto a typical barrier metal exposed in contact windows. We conclude with directions for further research to develop poly-SiGe technology for integrated inertial, optical, and RF MEMS applications.

scholarly journals Semi-Analytical Solution for Free Vibration Differential Equations of Curved Girders

2017 ◽  
Vol 63 (1) ◽  
pp. 115-132
Author(s):  
Y. Song ◽  
X. Chai
Keyword(s):  
Analytical Solution ◽  
Differential Equations ◽  
Free Vibration ◽  
Coupling Effect ◽  
Longitudinal Vibration ◽  
Synthesis Method ◽  
Variable Separation ◽  
Element Analysis ◽  
Plane Vibration ◽  
Curved Girders

Abstract In this paper, a semi-analytical solution for free vibration differential equations of curved girders is proposed based on their mathematical properties and vibration characteristics. The solutions of in-plane vibration differential equations are classified into two cases: one only considers variable separation of non-longitudinal vibration, while the other is a synthesis method addressing both longitudinal and non-longitudinal vibration using Rayleigh’s modal assumption and variable separation method. A similar approach is employed for the out of- plane vibration, but further mathematical operations are conducted to incorporate the coupling effect of bending and twisting. In this case study, the natural frequencies of a curved girder under different boundary conditions are obtained using the two proposed methods, respectively. The results are compared with those from the finite element analysis (FEA) and results show good convergence.

Sign in / Sign up

Export Citation Format

Share Document