scholarly journals Fabrication of Perforated PDMS Microchannel by Successive Laser Pyrolysis

Materials ◽  
2021 ◽  
Vol 14 (23) ◽  
pp. 7275
Author(s):  
Koungjun Min ◽  
Jaemook Lim ◽  
Ji Hwan Lim ◽  
Eunseung Hwang ◽  
Youngchan Kim ◽  
...  

Poly(dimethylsiloxane) has attracted much attention in soft lithography and has also been preferred as a platform for a photochemical reaction, thanks to its outstanding characteristics including ease of use, nontoxicity, and high optical transmittance. However, the low stiffness of PDMS, an obvious advantage for soft lithography, is often treated as an obstacle in conducting precise handling or maintaining its structural integrity. For these reasons, a Glass-PDMS-Glass structure has emerged as a straightforward alternative. Nevertheless, several challenges are remaining in fabricating Glass-PDMS-Glass structure through the conventional PDMS patterning techniques such as photolithography and etching processes for master mold. The complicated techniques are not suitable for frequent design modifications in research-oriented fields, and fabrication of perforated PDMS is hard to achieve using mold replication. Herein, we utilize the successive laser pyrolysis technique to pattern thin-film PDMS for microfluidic applications. The direct use of thin film at the glass surface prevents the difficulties of thin-film handling. Through the precise control of photothermal pyrolysis phenomena, we provide a facile fabrication process for perforated PDMS microchannels. In the final demonstration, the laminar flow has been successfully created owing to the smooth surface profile. We envision further applications using rapid prototyping of the perforated PDMS microchannel.

2020 ◽  
Vol 102 (21) ◽  
Author(s):  
Stephan Geprägs ◽  
Björn Erik Skovdal ◽  
Monika Scheufele ◽  
Matthias Opel ◽  
Didier Wermeille ◽  
...  

2008 ◽  
Vol 381-382 ◽  
pp. 407-410
Author(s):  
Shu Jie Liu ◽  
K. Watanabe ◽  
Satoru Takahashi ◽  
Kiyoshi Takamasu

In the semiconductor industry, a device that can measure the surface-profile of photoresist is needed. Since the photoresist surface is very smooth and deformable, the device is required to measure vertical direction with nanometer resolution and not to damage it at the measurement. We developed the apparatus using multi-cantilever and white light interferometer to measure the surface-profile of thin film. But, this system with scanning method suffers from the presence of moving stage and systematic sensor errors. So, in this paper, an error separation approach used coupled distance sensors, together with an autocollimator as an additional angle measuring device, was consulted the potentiality for self-calibration of multi-cantilever. Then, according to this method, we constructed the experimental apparatus and do the measurement on the resist film. The results demonstrated the feasibility that the constructed multi-ball-cantilever AFM system combined with an autocollimator could measure the thin film with high accuracy.


2021 ◽  
Vol 2103 (1) ◽  
pp. 012233
Author(s):  
I V Volodin ◽  
A A Alabuzhev

Abstract In the present paper a dynamics of a thin ferrofluid film under the vertical vibration in a static magnetic field is examined. The vibrational amplitude is assumed to be greater than film thickness so that vibrational force is greater than magnetic and gravitational forces. The pulsating part and the averaged part of the hydrodynamics fields are obtained. The solution of pulsating part for the traveling surface wave is found. The equation for the averaged surface profile is found.


2019 ◽  
Vol 61 (1) ◽  
pp. 64-70
Author(s):  
Said Benramache

AbstractWe investigated the structural and optical properties of zinc oxide (ZnO) thin film as the n-type semiconductor. In this work, the sol–gel method used to fabricate ZnO thin film on glass substrate with 0.5 mol/l of zinc acetate dehydrates. The crystals quality of the thin film analyzed by X-ray diffraction and the optical transmittance was carried out by an ultraviolet-visible spectrophotometer. The DRX analyses indicated that ZnO film have polycrystalline nature and hexagonal wurtzite structure with (002) preferential orientation and the measured average crystallite size of ZnO of 207.9 nm. The thin film exhibit average optical transparency about 90 %, in the visible region, found that optical band gap energy was 3.282 eV, the Urbach energy also was calculated from optical transmittance to optimal value is 196.7 meV.


2020 ◽  
Vol 20 (10) ◽  
pp. 6435-6440
Author(s):  
Do-Kyung Kim ◽  
Jae-Hyung Han ◽  
Muhan Choi. ◽  
Jin-Hyuk Bae

We propose the direct transfer method of single-layer graphene (SLG) from metal catalyst Cu-foil to a polymeric insulator and the direct patterning method of the SLG for electrodes of organic thin-film transistors (OTFTs) without contamination using soft-lithography. Through soft-lithography, SLG can be formed in various patterns relatively easily in comparison with the conventional photolithography method that has multiple complex process steps to make graphene patterns. Furthermore, the 6,13-bis(triisopropylsilylethynyl) pentacene OTFTs are fabricated in solution with SLG source and drain electrodes. As a result, the field-effect mobility of OTFTs based on SLG electrodes was enhanced about 4 times in comparison with that of OTFTs using typical metal electrodes due to the decrease in contact resistance.


Materials ◽  
2019 ◽  
Vol 12 (1) ◽  
pp. 137 ◽  
Author(s):  
Seung-Hun Lee ◽  
Kihwan Kwon ◽  
Kwanoh Kim ◽  
Jae Sung Yoon ◽  
Doo-Sun Choi ◽  
...  

The properties of Al-doped SnOx films deposited via reactive co-sputtering were examined in terms of their potential applications for the fabrication of transparent and flexible electronic devices. Al 2.2-atom %-doped SnOx thin-film transistors (TFTs) exhibit improved semiconductor characteristics compared to non-doped films, with a lower sub-threshold swing of ~0.68 Vdec−1, increased on/off current ratio of ~8 × 107, threshold voltage (Vth) near 0 V, and markedly reduced (by 81%) Vth instability in air, attributable to the decrease in oxygen vacancy defects induced by the strong oxidizing potential of Al. Al-doped SnOx films maintain amorphous crystallinity, an optical transmittance of ~97%, and an adhesive strength (to a plastic substrate) of over 0.7 kgf/mm; such films are thus promising semiconductor candidates for fabrication of transparent flexible TFTs.


1991 ◽  
Vol 224 ◽  
Author(s):  
Hiroshi Hayama ◽  
Masahito Mukainari ◽  
Takeshi Saito

AbstractA new recrystallization technique has been proposed, with which a large area thin film silicon on glass structure is able to be recrystallized. The technique utilizes self-heat-confinement caused by induction eddy currents, analogous to floating zone crystal refining technique. An experimental recrystallization system is shown. A recrystallized silicon layer with some hundred micron grain size was obtained with the system.


2011 ◽  
Vol 34 (1) ◽  
pp. 189-193 ◽  
Author(s):  
Lujian Chen ◽  
Fengyu Gao ◽  
Chun Liu ◽  
Qiong Zhou ◽  
Sensen Li ◽  
...  

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