scholarly journals Modeling of Gate Stack Patterning for Advanced Technology Nodes: A Review

Micromachines ◽  
2018 ◽  
Vol 9 (12) ◽  
pp. 631 ◽  
Author(s):  
Xaver Klemenschits ◽  
Siegfried Selberherr ◽  
Lado Filipovic
Keyword(s):  
Computer Aided Design ◽  
Semiconductor Device ◽  
Advanced Technology ◽  
Stable Operation ◽  
Gate Stack ◽  
Chemical Modeling ◽  
Metal Gates ◽  
Chemical Models ◽  
Recent Advances ◽  
Feature Scale

Semiconductor device dimensions have been decreasing steadily over the past several decades, generating the need to overcome fundamental limitations of both the materials they are made of and the fabrication techniques used to build them. Modern metal gates are no longer a simple polysilicon layer, but rather consist of a stack of several different materials, often requiring multiple processing steps each, to obtain the characteristics needed for stable operation. In order to better understand the underlying mechanics and predict the potential of new methods and materials, technology computer aided design has become increasingly important. This review will discuss the fundamental methods, used to describe expected topology changes, and their respective benefits and limitations. In particular, common techniques used for effective modeling of the transport of molecular entities using numerical particle ray tracing in the feature scale region will be reviewed, taking into account the limitations they impose on chemical modeling. The modeling of surface chemistries and recent advances therein, which have enabled the identification of dominant etch mechanisms and the development of sophisticated chemical models, is further presented. Finally, recent advances in the modeling of gate stack pattering using advanced geometries in the feature scale are discussed, taking note of the underlying methods and their limitations, which still need to be overcome and are actively investigated.

scholarly journals Atomic Layer Deposition (ALD) of Metal Gates for CMOS

2019 ◽  
Vol 9 (11) ◽  
pp. 2388 ◽  
Author(s):  
Chao Zhao ◽  
Jinjuan Xiang
Keyword(s):  
Atomic Layer Deposition ◽  
Field Effect Transistors ◽  
Material Selection ◽  
Atomic Layer ◽  
Oxide Semiconductor ◽  
Metal Gate ◽  
Gate Stack ◽  
Short Channel ◽  
Metal Gates ◽  
Layer Deposition

The continuous down-scaling of complementary metal oxide semiconductor (CMOS) field effect transistors (FETs) had been suffering two fateful technical issues, one relative to the thinning of gate dielectric and the other to the aggressive shortening of channel in last 20 years. To solve the first issue, the high-κ dielectric and metal gate technology had been induced to replace the conventional gate stack of silicon dioxide layer and poly-silicon. To suppress the short channel effects, device architecture had changed from planar bulk Si device to fully depleted silicon on insulator (FDSOI) and FinFETs, and will transit to gate all-around FETs (GAA-FETs). Different from the planar devices, the FinFETs and GAA-FETs have a 3D channel. The conventional high-κ/metal gate process using sputtering faces conformality difficulty, and all atomic layer deposition (ALD) of gate stack become necessary. This review covers both scientific and technological parts related to the ALD of metal gates including the concept of effect work function, the material selection, the precursors for the deposition, the threshold voltage (Vt) tuning of the metal gate in contact with HfO2/SiO2/Si. The ALD of n-type metal gate will be detailed systematically, based mainly on the authors’ works in last five years, and the all ALD gate stacks will be proposed for the future generations based on the learning.

Element Edge Based Discretization for TCAD Device Simulation

2021 ◽  
Author(s):  
Juan Sanchez ◽  
Qiusong Chen
Keyword(s):  
Computer Aided Design ◽  
Field Effect Transistor ◽  
Semiconductor Device ◽  
Device Simulation ◽  
Polarization Effects ◽  
Effect Transistor ◽  
Edge Based ◽  
Volume Method ◽  
Aided Design ◽  
Novel Devices

<div><div><div><p>Technology computer-aided design (TCAD) semiconductor device simulators solve partial differential equations (PDE) using the finite volume method (FVM), or related methods. While this approach has been in use over several decades, its methods continue to be extended, and are still applicable for investigating novel devices. In this paper, we present an element edge based (EEB) FVM discretization approach suitable for capturing vector-field effects. Drawing from a 2D approach in the literature, we have extended this method to 3D. We implemented this method in a TCAD semiconductor device simulator, which uses a generalized PDE (GPDE) approach to simulate de- vices with the FVM. We describe how our EEB method is compatible with the GPDE approach, allowing the modeling of vector effects using scripting. This method is applied to solve polarization effects in a 3D ferro capacitor, and a 2D ferroelectric field-effect transistor. An example for field- dependent mobility in a 3D MOSFET is also presented.</p></div></div></div>

scholarly journals Recent Advances in Material and Geometrical Modelling in Dental Applications

2018 ◽  
Vol 6 (6) ◽  
pp. 1138-1144
Author(s):  
Waleed M. S. Al Qahtani ◽  
Salah A Yousief ◽  
Mohamed I. El-Anwar
Keyword(s):  
Computer Aided Design ◽  
New Technology ◽  
Dental Materials ◽  
Geometric Modelling ◽  
Cad System ◽  
Geometrical Modelling ◽  
Recent Advances ◽  
Wide Range ◽  
Computer Aided ◽  
Dental Applications

This article touched, in brief, the recent advances in dental materials and geometric modelling in dental applications. Most common categories of dental materials as metallic alloys, composites, ceramics and nanomaterials were briefly demonstrated. Nanotechnology improved the quality of dental biomaterials. This new technology improves many existing materials properties, also, to introduce new materials with superior properties that covered a wide range of applications in dentistry. Geometric modelling was discussed as a concept and examples within this article. The geometric modelling with engineering Computer-Aided-Design (CAD) system(s) is highly satisfactory for further analysis or Computer-Aided-Manufacturing (CAM) processes. The geometric modelling extracted from Computed-Tomography (CT) images (or its similar techniques) for the sake of CAM also reached a sufficient level of accuracy, while, obtaining efficient solid modelling without huge efforts on body surfaces, faces, and gaps healing is still doubtable. This article is merely a compilation of knowledge learned from lectures, workshops, books, and journal articles, articles from the internet, dental forum, and scientific groups' discussions.

The Application of Rapid Prototyping and Manufacturing for Anatomical Modelling in Medicine

2010 ◽  
Vol 6 ◽  
pp. 57-65 ◽  
Author(s):  
S. Singare ◽  
W. Ping ◽  
X. Guanghui
Keyword(s):  
Tissue Engineering ◽  
Rapid Prototyping ◽  
Computer Aided Design ◽  
Surgical Planning ◽  
Three Dimensional ◽  
Advanced Technology ◽  
Tissue Scaffold ◽  
Custom Implant ◽  
Rapid Prototyping And Manufacturing ◽  
High Level

This paper reviews the applications of advanced technology such as CT, reverse engineering (RE), computer aided design (CAD) and rapid prototyping (RP) in medicine. We described: 1) the use of RP and medical imaging in surgical planning; 2) the design process for the production of customized medical implants by rapid prototyping; and 3) the fabrication of three-dimensional scaffolds for tissue engineering of human liver. In order to examine the applicability and efficiency of the rapid prototyping technology, some case studies are presented, involving visualization and surgical planning; the design of custom implant for cranial reconstruction; and the use of RP in the production of tissue scaffold. From the results, it has been shown that RP can be applied with high level of accuracy in surgical planning, custom implant and tissue engineering.

Physico-chemical Characterization of Thin Oxide Films: Difficulties and Solutions

2008 ◽  
Vol 1073 ◽  
Author(s):  
Thierry Conard ◽  
Wilfried Vandervorst
Keyword(s):  
Substrate Surface ◽  
Depth Profiling ◽  
Chemical Characterization ◽  
Surface Preparation ◽  
High Energy ◽  
Thin Layers ◽  
Back Side ◽  
Gate Stack ◽  
Metal Gates

ABSTRACTOxides have always been an integral part of semiconductor manufacturing both in front and back-end processing. With the necessary increase in performance, the demand on these oxides has been increasing leading to their (future) replacement by more complex materials, such as high-k's in gate oxide and metal gates. With the increasing material complexity, a thorough characterization of all aspects of these materials is necessary, covering, for instance, surfaces and interfaces, nucleation, growth, atomic structure, …This article focuses on the characterization of front-end oxides and their interfaces. It shows that detailed information can be achieved by sophisticated experimental techniques such as synchrotron radiation, high energy ERD or AtomProbe but that adequate sample preparation and/or analysis by a combination of more routinely available techniques may achieve similar results. This is shown through the study of three different systems/problems in the gate stack analysis. We will first focus on the determination of substrate surface preparation conditions before deposition and their influence on growth mode and the growth characteristics by different growth techniques (ALD, MOCVD, …). Second, we present the possibilities of compositional depth profiling of thin layers both with nuclear techniques and Angle-Resolved XPS. Finally, we will show that using conventional XPS and a combination of front and back-side analysis, the interface between high-k oxide and metal gates can be investigated. More examples of gate stack characterization can be found elsewhere

Channel Strain Characterization in Semiconductor Device by Techniques Based on Transmission Electron Microscope

2011 ◽  
Vol 1349 ◽  
Author(s):  
Jinghong Li ◽  
Jeff Johnson ◽  
Dureseti Chidambarrao ◽  
Yunyu Wang ◽  
Anthony G. Domenicucci
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Computer Aided Design ◽  
Semiconductor Device ◽  
Stress Measurement ◽  
Strain Characterization ◽  
Transmission Electron ◽  
Strain Stress ◽  
Convergent Beam ◽  
Aided Design

ABSTRACTThree techniques based on transmission electron microscope (TEM) have been successfully applied to measure strain/stress in the channel area of PMOS semiconductor devices with embedded SiGe in the source/drain areas: convergent beam electron diffraction (CBED), nano beam diffraction (NBD) and dark-filed holography (DFH). Consistent channel strain measurements from the three techniques on the same TEM sample (eSiGe PMOS with 17%Ge) were obtained. Reliable strain/stress measurement results in the channel area have been achieved with very good agreement with computer-aided design (TCAD) calculations.

scholarly journals Greener Pretreatment Approaches for the Valorisation of Natural Fibre Biomass into Bioproducts

Polymers ◽  
2021 ◽  
Vol 13 (17) ◽  
pp. 2971
Author(s):  
Mohd Nor Faiz Norrrahim ◽  
Muhammad Roslim Muhammad Huzaifah ◽  
Mohammed Abdillah Ahmad Farid ◽  
Siti Shazra Shazleen ◽  
Muhammad Syukri Mohamad Misenan ◽  
...  
Keyword(s):  
Lignocellulosic Biomass ◽  
Natural Fibre ◽  
Natural Fibres ◽  
Advanced Technology ◽  
Chemical Pretreatment ◽  
Biological Pretreatment ◽  
Essential Requirement ◽  
Main Drawback ◽  
Recent Advances ◽  
Alternative Approach

The utilization of lignocellulosic biomass in various applications has a promising potential as advanced technology progresses due to its renowned advantages as cheap and abundant feedstock. The main drawback in the utilization of this type of biomass is the essential requirement for the pretreatment process. The most common pretreatment process applied is chemical pretreatment. However, it is a non-eco-friendly process. Therefore, this review aims to bring into light several greener pretreatment processes as an alternative approach for the current chemical pretreatment. The main processes for each physical and biological pretreatment process are reviewed and highlighted. Additionally, recent advances in the effect of different non-chemical pretreatment approaches for the natural fibres are also critically discussed with a focus on bioproducts conversion.

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