scholarly journals Bulk Junctionless Transistor (JLT) with Non-Uniform Doping: A high Performance and Scalable device

2019 ◽  
Vol 8 (6) ◽  
pp. 450-455
Keyword(s):  
High Performance ◽  
Electrical Performance ◽  
Short Channel Effects ◽  
Short Channel ◽  
Junctionless Transistor ◽  
Channel Effects ◽  
Distribution Parameters ◽  
20 Nm ◽  
Substrate Doping ◽  
Uniform Doping

In this paper we have presented the non-uniformly doped bulk Junctionless transistor (JLT) and investigated bulk-JLT and SOI-JLT with non-uniform doping in terms of its electrical performance parameters and short channel effects (SCEs) parameters comparatively. Effective thickness of channel depends on non-uniform doping distribution parameters and this affects the performance of bulk-JLT notably, however it is not so in case of SOI-JLT. The effect of non-uniform doping on electrical characteristics of JLTs (bulk and SOI) in terms of Subthreshold Slope (SS), ON-current, OFF-Current and ON/OFF current ratio has been investigated, and the non-uniformly doped bulk-JLT exhibits high ON/OFF ratio (109 for 20 nm Gate Length). Moreover, the non-uniformly doped bulk-JLT also shows improved short-channel effects (SCEs) parameters (such as Drain Induced Barrier Lowering, Threshold Voltage variations etc.) compared to SOI-JLT. Lastly, the effect of standard deviation, dielectric constant, substrate doping, and well biasing on the device performance are examined to further improve the performance of bulk-JLT independently.

CMOS DEVICES ARCHITECTURES AND TECHNOLOGY INNOVATIONS FOR THE NANOELECTRONICS ERA

2006 ◽  
Vol 16 (01) ◽  
pp. 193-219 ◽  
Author(s):  
S. DELEONIBUS ◽  
B. de SALVO ◽  
T. ERNST ◽  
O. FAYNOT ◽  
T. POIROUX ◽  
...  
Keyword(s):  
Low Power ◽  
High Performance ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Short Channel Effects ◽  
Short Channel ◽  
Trade Offs ◽  
Future System ◽  
The Future ◽  
Channel Effects

Innovations in electronics history have been possible because of the strong association of devices and materials research. The demand for low voltage, low power and high performance are the great challenges for engineering of sub 50nm gate length CMOS devices. Functional CMOS devices in the range of 5 nm channel length have been demonstrated. The alternative architectures allowing to increase devices drivability and reduce power are reviewed through the issues to address in gate/channel and substrate, gate dielectric as well as source and drain engineering. HiK gate dielectric and metal gate are among the most strategic options to consider for power consumption and low supply voltage management. It will be very difficult to compete with CMOS logic because of the low series resistance required to obtain high performance. By introducing new materials ( Ge , diamond/graphite Carbon, HiK, …), Si based CMOS will be scaled beyond the ITRS as the future System-on-Chip Platform integrating new disruptive devices. The association of C-diamond with HiK as a combination for new functionalized Buried Insulators, for example, will bring new ways of improving short channel effects and suppress self-heating. That will allow new optimization of Ion-Ioff trade offs. The control of low power dissipation and short channel effects together with high performance will be the major challenges in the future.

scholarly journals Implementation of 20 nm Graphene Channel Field Effect Transistors Using Silvaco TCAD Tool to Improve Short Channel Effects over Conventional MOSFETs

2021 ◽  
Vol 7 (1) ◽  
pp. 18-29
Author(s):  
Vinod Pralhad Tayade ◽  
Swapnil Laxman Lahudkar
Keyword(s):  
Low Power ◽  
Field Effect ◽  
High Speed ◽  
Field Effect Transistors ◽  
Oxide Semiconductor ◽  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects ◽  
20 Nm ◽  
Graphene Material

In recent years, demands for high speed and low power circuits have been raised. As conventional metal oxide semiconductor field effect transistors (MOSFETs) are unable to satisfy the demands due to short channel effects, the purpose of the study is to design an alternative of MOSFETs. Graphene FETs are one of the alternatives of MOSFETs due to the excellent properties of graphene material. In this work, a user-defined graphene material is defined, and a graphene channel FET is implemented using the Silvaco technology computer-aided design (TCAD) tool at 100 nm and scaled to 20 nm channel length. A silicon channel MOSFET is also implemented to compare the performance. The results show the improvement in subthreshold slope (SS) = 114 mV/dec, ION/IOFF ratio = 14379, and drain induced barrier lowering (DIBL) = 123 mV/V. It is concluded that graphene FETs are suitable candidates for low power applications.

An Area and Energy Efficient RAM Cell Design in Quantum Dot Cellular Automata

2019 ◽  
Vol 16 (10) ◽  
pp. 4179-4187
Author(s):  
Amanpreet Sandhu ◽  
Sheifali Gupta
Keyword(s):  
Cellular Automata ◽  
Quantum Dot ◽  
High Performance ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
Short Channel Effects ◽  
Short Channel ◽  
Quantum Dot Cellular Automata ◽  
Channel Effects

The Conventional Complementary Metal oxide semiconductor (CMOS) technology has been revolutionized from the past few decades. However, the CMOS circuit faces serious constraints like short channel effects, quantum effects, doping fluctuations at the nanoscale which limits them to further scaling down at nano meter range. Among various existing nanotechnologies, Quantum dot Cellular Automata (QCA) provides new solution at nanocircuit design. The technical advancement of the paper lies in designing a high performance RAM cell with less QCA cells, less occupational area and lower power dissipation characteristics. The design occupies 12.5% lower area, 16.6% lower input to output delay, and dissipates 18.26% lesser energy than the designs in the literature. The proposed RAMcell is robust due to lesser noise variations. Also it has less fabrication cost due to absence of rotated cells.

NMOS Low Boron Activation in Pre-Amorphise Silicon

2014 ◽  
Vol 875-877 ◽  
pp. 734-738
Author(s):  
Muzalifah Mohd Said ◽  
Zul Atfyi Fauzan ◽  
Nur Fatihah Azmi
Keyword(s):  
Software Package ◽  
Electrical Characteristic ◽  
Electrical Performance ◽  
Short Channel Effects ◽  
High Demand ◽  
Short Channel ◽  
Compact Size ◽  
Junction Formation ◽  
Channel Effects ◽  
Different Doses

The high demand of smaller and compact size of MOSFETs has leads to desirable for ultra shallow junction formation with low sheet resistance and good electrical performances. These two characteristics are required to suppress short channel effects and to increase the efficiency of device. In this paper, Pre-amorphise implantation (PAI) PMOS with different doses of Boron and the basic PMOS structure are done by using ATHENA and the performance of devices is compared by using ATLAS software package from Silvaco TCAD. Comparison done in electrical characteristic, I-V curve Ion and Ioff has showed PMOS with PAI technology with low boron doses resulted in increasing electrical performance characteristic.

scholarly journals Drain Current and Short Channel Effects Modeling in Junctionless Nanowire Transistors

2013 ◽  
Vol 8 (2) ◽  
pp. 116-124
Author(s):  
Renan D. Trevisoli ◽  
Rodrigo T. Doria ◽  
Michelly De Souza ◽  
Marcelo Antonio Pavanello
Keyword(s):  
Threshold Voltage ◽  
Drain Current ◽  
Short Channel Effects ◽  
Subthreshold Slope ◽  
Short Channel ◽  
Nanowire Transistors ◽  
Channel Effects ◽  
20 Nm ◽  
Analytical Expressions ◽  
Controlled Doping

Junctionless nanowire transistors (JNTs) are considered promising for the sub-20 nm era, since they provide a great scalability without the need for rigorously controlled doping techniques. In this work, the modeling of triple-gate JNTs is addressed, focusing on the short-channel effects. Analytical expressions for the subthreshold slope, threshold voltage roll-off and drain induced barrier lowering are presented. The model is validated using tridimensional numerical simulations.

Ultra-Thin Body and Buried Oxide (UTBB) SOI MOSFETs on Suppression of Short-Channel Effects (SCEs): A Review

2015 ◽  
Vol 1109 ◽  
pp. 257-261 ◽  
Author(s):  
Noraini Othman ◽  
Mohd Khairuddin Md Arshad ◽  
Syarifah Norfaezah Sabki ◽  
U. Hashim
Keyword(s):  
Oxide Thickness ◽  
Thin Body ◽  
Short Channel Effects ◽  
Short Channel ◽  
Soi Mosfet ◽  
Buried Oxide ◽  
Device Structures ◽  
Junctionless Transistor ◽  
Channel Effects ◽  
Silicon Thickness

This paper reviews the different UTBB SOI MOSFET structures and their superiority in suppressing short-channel effects (SCEs). As the gate length (Lg), buried oxide thickness (TBOX) and silicon thickness (Tsi) are scaled down, the severity of SCEs becomes significant. The different UTBB SOI MOSFET device structures introduced to suppress these SCEs are discussed. The effectiveness of these structures in managing the associated SCEs such as drain-induced barrier lowering (DIBL), subthreshold swing (SS) and off-state leakage current (Ioff) is also presented. Further evaluations are made on other competing CMOS technologies such as multigate MOSFETs (FinFETs, three-gates, four-gates) and junctionless transistor in controlling the SCEs.

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