scholarly journals Simulation of Energy Bands for Metal and Semiconductor Junction

2020 ◽  
Vol 1 (2) ◽  
pp. 7-13
Author(s):  
Wut Hmone Kyaw ◽  
May Nwe Myint Aye
Keyword(s):  
Gallium Nitride ◽  
Wide Band ◽  
Oxide Semiconductor ◽  
Energy Bands ◽  
Wide Band Gap ◽  
Contact Potential ◽  
Effect Transistor ◽  
Simulation Results ◽  
Computerized Simulation ◽  
Matlab Programming

This paper presents the metal-semiconductor band structure analysis for metal-oxide semiconductor field effect transistor (MOSFET). The energy bands were observed at metal-semiconductor and semiconductor-metal junctions. The simulation results show energy variations by using gallium-nitride (GaN) material. Gallium nitride based MOSFETs have some special material properties and wide band-gap. From the energy band, the condition of contact potential, conduction and valence band-edges can be analyzed. The computerized simulation results for getting the band layers are investigated with MATLAB programming language.

Package Design and Analysis for Vertical Gallium Nitride Field Effect Transistors

2021 ◽  
Vol 2021 (HiTEC) ◽  
pp. 000058-000063
Author(s):  
John Harris ◽  
David Huitink ◽  
Dan Ewing
Keyword(s):  
Gallium Nitride ◽  
High Temperature ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Wide Band ◽  
Development Stage ◽  
Wide Band Gap ◽  
Package Design ◽  
Bulk Gan ◽  
Effect Transistor

Abstract Gallium nitride (GaN) is a wide band gap semi-conductor with superior electron mobility to silicon carbide. These properties allow for the design of high temperature capable devices with excellent on resistance and breakdown voltage for their size. However, bulk GaN is difficult to fabricate and doping for field effect transistor (FET) control has been elusive, so vertical GaN devices are not commonplace. This paper measures the characteristics of vertical GaN FETs in the development stage and discusses packaging them for fabrication feedback and for future high temperature aplications.

Two-dimensional wide band-gap nitride semiconductor GaN and AlN materials：properties, fabrication and applications

2021 ◽  
Author(s):  
Zhongxin Wang ◽  
Guodong Wang ◽  
Xintong Liu ◽  
Shouzhi Wang ◽  
Tailin Wang ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Band Gap ◽  
Hot Spot ◽  
Wide Band ◽  
Aluminium Nitride ◽  
Semiconductor Materials ◽  
Two Dimensional ◽  
Wide Band Gap ◽  
Nitride Semiconductor ◽  
New Generation

Gallium nitride (GaN) and aluminium nitride (AlN), as the representatives of new generation of wide band gap semiconductor materials, have become a hot spot in the semiconductor field due to...

Structural and Electrical Properties of Hydrothermal Growth ZnO Nanorods

2015 ◽  
Vol 1109 ◽  
pp. 104-107
Author(s):  
K.L. Foo ◽  
U. Hashim ◽  
Chun Hong Voon ◽  
M. Kashif
Keyword(s):  
Electrical Properties ◽  
Zno Nanorods ◽  
Wide Band ◽  
Hydrothermal Growth ◽  
Oxide Semiconductor ◽  
Wide Band Gap ◽  
Interdigitated Electrode ◽  
Growth Technique ◽  
Xrd Pattern ◽  
Structural And Electrical Properties

ZnO nanorods, type of the metal-oxide semiconductor deposited on interdigitated electrode (IDE) substrate using hydrothermal growth technique. The growth ZnO nanorods was annealed in furnace at 500°C for 2 hours as to obtain highly crystallite of ZnO nanorods. XRD pattern indicated the synthesized ZnO nanorods have preferred orientation along the (002) plane. Moreover, FESEM images showed that the nanorods with the size less than 60 nanometer were successfully synthesized using hydrothermal growth technique. The investigation on optical properties using UV-Vis-NIR spectrophotometer confirmed ZnO is classified as a wide band gap semiconductor material. Furthermore, the growth ZnO nanorods which undergo electrical properties testing using dielectric analyzer and source meter show that the ZnO nanorods demonstrated rectifying behaviour.

EPR Study of the Role of Hydrogen in the Defect Formation Upon Heat Treatment of Oxidized SiC

1998 ◽  
Vol 513 ◽  
Author(s):  
P. J. Macfarlane ◽  
M. E. Zvanut
Keyword(s):  
Heat Treatment ◽  
Defect Formation ◽  
Wide Band ◽  
Oxide Semiconductor ◽  
Wide Band Gap ◽  
Paramagnetic Resonance ◽  
Hydrogen Incorporation ◽  
Si Substrates ◽  
Mos Devices ◽  
Dry Heat Treatment

ABSTRACTFor the past several years hydrogen incorporation in metal oxide semiconductor (MOS) devices has been of interest because studies have shown that vacuum annealing of oxidized Si substrates desorbs hydrogen, revealing interfacial defects. Today, in applications that require higher power and/or temperature, Si will likely be replaced with a wide-band-gap semiconductor. For MOS devices, SiC is a leading contender because it can be thermally oxidized to form a SiO2 insulating layer similar to Si. However, the SiC/SiO2 structure potentially contains hydrogen sensitive centers similar to those found in Si/SiO2 structures. Using electron paramagnetic resonance (EPR), we have observed a center 1.8 G wide peak-to-peak at g=2.0026. The center is generated in oxidized SiC that has received a 900° C dry, N2 or O2, post oxidation heat-treatment in which moisture is measured to be less than 1 ppm. Annealing at 900° C in standard Ar containing at least 50 ppm H2O decreases the center's concentration by two orders of magnitude. By comparing results from our study to studies of Si-H and C-H bonds in a-SiC:H [1] and SiC converted graphite [2], we suggest that this center is related to carbon dangling bonds created by the effusion of hydrogen during the dry heat-treatment. We will compare the activation energy for the hydrogen depassivation of our center with that found for other C-H and Si-H systems.

scholarly journals Porphyrin-Functionalized Zinc Oxide Nanostructures for Sensor Applications

Sensors ◽  
2018 ◽  
Vol 18 (7) ◽  
pp. 2279 ◽  
Author(s):  
Mohammad Ekrami ◽  
Gabriele Magna ◽  
Zahra Emam-djomeh ◽  
Mohammad Saeed Yarmand ◽  
Roberto Paolesse ◽  
...  
Keyword(s):  
Hybrid Materials ◽  
Mechanical Energy ◽  
Dye Sensitized Solar Cells ◽  
Wide Band ◽  
Oxide Semiconductor ◽  
Zinc Oxide Nanostructures ◽  
Wide Band Gap ◽  
Sensing Properties ◽  
Sensor Applications ◽  
Zinc Oxides

Hybrid materials made of wide band gap semiconductors and dye molecules are largely studied mainly for photovoltaic applications. However, these materials also show interesting chemical sensitivity. Zinc oxides (ZnO) and porphyrins are good examples of a metal oxide semiconductor and a dye molecule that give rise to a hybrid material with such interesting properties. ZnO has been studied for sensors, optoelectronics, electronic devices, photo-anodes for dye-sensitized solar cells, and for mechanical energy harvesting. Porphyrins, on the other side, can be synthesized in order to mimic their roles in living systems such as oxygen transport and charge transfer for catalytic processes in animals and photosynthesis in plants. This paper provides a review of the chemical sensing properties of porphyrin-capped ZnO nanostructures. The methodologies to functionalize the ZnO surface with porphyrins are illustrated with emphasis on the relationships between the material preparation and its sensing properties. The development of sensors is described through the application of the hybrid materials to different transducers.

Ultra-wide band gap AlGaN polarization-doped field effect transistor

2018 ◽  
Vol 57 (7) ◽  
pp. 074103 ◽  
Author(s):  
Andrew M. Armstrong ◽  
Brianna A. Klein ◽  
Albert Colon ◽  
Andrew A. Allerman ◽  
Erica A. Douglas ◽  
...  
Keyword(s):  
Band Gap ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Wide Band ◽  
Ultra Wide Band ◽  
Wide Band Gap ◽  
Effect Transistor

Solid-state lighting with wide band gap semiconductors

2014 ◽  
Vol 1 ◽  
Author(s):  
Faiz Rahman
Keyword(s):  
Gallium Nitride ◽  
Solid State ◽  
Band Gap ◽  
Light Emitting Diodes ◽  
Rapid Development ◽  
Wide Band ◽  
Solid State Lighting ◽  
Wide Band Gap ◽  
Light Emitting ◽  
Wide Band Gap Semiconductors

ABSTRACTLight-emitting diodes (LEDs) made from wide band gap semiconductors, such as gallium nitride, are undergoing rapid development. Solid-state lighting with these LEDs is transforming patterns of energy usage and lifestyle throughout the world.With solid-state lighting gradually taking over from incandescent and fluorescent lighting, light-emitting diodes (LEDs) are very much the focus of research nowadays. This compact review takes a look at LEDs for lighting applications made from wide band gap semiconductors. A very brief history of electric lighting is included for completeness, followed by a description of blue-emitting LEDs that serve as pump sources for all ‘white’ LEDs. This is followed by a discussion on techniques to extract more light from the confines of LED chips through surface patterning. The thermal management of LEDs is perhaps the most important consideration in designing and using LED-based luminaires. This topic is discussed with regard to recent studies on LED reliability. The very promising development of gallium nitride-on-silicon LEDs is examined next followed by a discussion on phosphors for color conversion in LEDs. LED lighting has positively influenced both upscale and downscale illumination markets worldwide. Its societal impact is examined, with the review concluding with a look at efforts to produce LEDs from zinc oxide – a material that holds much promise for the future of solid-state lighting.

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