Model of Nonuniform Channel for the Charge Carrier Transport in Nanoscale FETs

2011 ◽  
Vol 276 ◽  
pp. 59-65
Author(s):  
V.P. Popov ◽  
M.A. Ilnitsky
Keyword(s):  
Carrier Transport ◽  
Narrow Band ◽  
Drain Current ◽  
Experimental Fact ◽  
New Materials ◽  
Physical Reason ◽  
Mobility Degradation ◽  
Modeling Data ◽  
Length Scaling ◽  
Silicon Cmos

Mobility degradation during gate length scaling is a well established experimental fact, which is confirmed also by Monte –Carlo simulation. We have analyzed the physical reason for this degradation using experimental and modeling data obtained in classic drift-diffusional approximation with electric field dependences of electron mobility. We have shown that this dependence is a main reason for mobility degradation in nanoscale FETs, which means also that the same reason will limit the drain current in future post-silicon CMOS generation with new materials like narrow band III/V compounds or graphene with the highest carrier velocity near 108 cm/s.

Charge Carrier Transport along Grain Boundaries in Silicon

2013 ◽  
Vol 205-206 ◽  
pp. 293-298 ◽  
Author(s):  
Martin Kittler ◽  
Manfred Reiche ◽  
Hans Michael Krause
Keyword(s):  
Charge Carrier ◽  
Grain Boundaries ◽  
Carrier Transport ◽  
Room Temperature ◽  
Drain Current ◽  
Charge Carriers ◽  
Strong Increase ◽  
Charge Carrier Transport ◽  
Mobility Of Charge Carriers

The influence of GBs contained in the channel of MOS-FETs - fabricated in thin SOI layers - is demonstrated. The drain current measured at room temperature increases about 50 times for nFETs and about 10 times for pFETs, respectively, as compared to reference devices. The observations might be interpreted as a strong increase of the mobility of charge carriers. Moreover, the observed stepwise changes of the drain current at 5 K may point to Coulomb blockades.

Narrow Band-Gap a-Si:H with Improved Minority Carrier-Transport Prepared by Chemical Annealing

1991 ◽  
Vol 30 (Part 2, No. 2B) ◽  
pp. L239-L242 ◽  
Author(s):  
Debajyoti Das ◽  
Hajime Shirai ◽  
Jun-ichi Hanna ◽  
Isamu Shimizu
Keyword(s):  
Band Gap ◽  
Carrier Transport ◽  
Minority Carrier ◽  
Narrow Band ◽  
Chemical Annealing

Influences of Carrier Transport on Drain-Current Variability of MOSFETs

2011 ◽  
Vol 470 ◽  
pp. 184-187 ◽  
Author(s):  
Kenji Ohmori ◽  
Kenji Shiraishi ◽  
Keisaku Yamada
Keyword(s):  
Carrier Transport ◽  
Drain Current ◽  
Short Channel ◽  
Short Channel Effect ◽  
Conduction Mechanisms ◽  
Channel Effect

We have investigated the static variability of p-MOSFETs by evaluating the drain current under various conditions of gate and drain voltages. The value of drain current variability (σId/Id) is proportional to (LW)-1/2 before the short channel effect appears, being similar to that of Vt variability. The magnitude of σId/Id decreases as the gate overdrive (Vg-Vt) decreases, and it is classified into two regimes that correspond to the carrier conduction mechanisms, namely diffusion and drift transports. This result strongly suggests that the dominant factors for determining σId/Id values are related to the carrier conduction mechanisms.

scholarly journals Modeling of hot-carrier degradation based on thorough carrier transport treatment

2014 ◽  
Vol 27 (4) ◽  
pp. 479-508 ◽  
Author(s):  
Stanislav Tyaginov ◽  
Yannick Wimmer ◽  
Tibor Grasser
Keyword(s):  
Electron Scattering ◽  
Carrier Transport ◽  
Drain Current ◽  
Boltzmann Transport ◽  
Hot Carrier ◽  
Statistical Fluctuations ◽  
Channel Gate ◽  
Current Change ◽  
Hot Carrier Degradation

We present and validate a physics-basedmodel for hot-carrier degradation. The model is based on a thorough carrier transport treatment by means of an exact solution of the Boltzmann transport equation. Such important ingredients relevant for hot-carrier degradation as the competing mechanisms of bond dissociation, electron-electron scattering, the activation energy reduction due to the interaction of the dipole moment of the bond with the electric field as well as statistical fluctuations of this energy are incorporated in our approach. The model is validated in order to represent the linear drain current change in three different devices subjected to hot-carrier stress under different conditions. The main demand is that the model has to use a unique set of parameters. We analyze the importance of all the model ingredients, especially the role of electron-electron scattering. We check the idea that the channel/gate length of the device alone is not enough to judge whether electron-electron scattering is important or not and instead a combination of the device topology and stress conditions needs to be used.

Analysis of Carrier Transport Mechanism for p-Type SnO Thin-Film Transistor

2017 ◽  
Vol 748 ◽  
pp. 122-126
Author(s):  
Jian Qin ◽  
Lei Qiang
Keyword(s):  
Thin Film ◽  
Carrier Transport ◽  
Conduction Mechanism ◽  
Thin Film Transistor ◽  
Drain Current ◽  
Thermally Activated ◽  
Multiple Trapping ◽  
P Type ◽  
Tin Monoxide ◽  
Thermally Activated Process

Temperature effect on the I-V characteristics of tin monoxide thin film transistors (SnO TFTs) has been analyzed. The result shows that the drain current of the SnO TFT obeys the Meyer-Neldel rule under low temperature, where current conduction is a thermally activated process. The carrier transport would be dominated by multiple trapping conduction, while, percolation conduction mechanism holds as the temperature increase.

Temperature Dependent Carrier Transport in Single-Crystalline Si TFTs inside a Location-Controlled Grain

2004 ◽  
Vol 814 ◽  
Author(s):  
V. Rana ◽  
R. Ishihara ◽  
Y. Hiroshima ◽  
D. Abe ◽  
S. Inoue ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Phonon Scattering ◽  
Drain Current ◽  
Gate Insulator ◽  
Temperature Dependent ◽  
Carrier Generation ◽  
Thermal Generation ◽  
Single Crystalline ◽  
Gap States ◽  
Czochralski Process

AbstractTemperature dependant I-V characteristics were measured on single-crystalline Si (c-Si) TFTs fabricated inside a location-controlled grain by [.proportional]-Czochralski process using an excimer-laser. At ON-state, temperature the activation energy (Ea) of the drain current drops to a negative value. The field effect mobility ([.proportional]FE) also decreases with temperature with a power of -1.86, which indicates that, the carriers transport are governed by acoustic phonon scattering. At OFF state with a small gate bias, leakage current is dominated by thermal generation, however the Ea was 0.9eV, i.e., near the band gap value of Si. This suggests that the carrier generation centers are not located at the mid-gap states. These distinctive results from a typical poly-Si TFTs are systematically investigated for c-Si TFTs having ECR- PECVD and LPCVD SiO2 gate insulator.

Modulating carrier transport of Pt-Ag heteronuclear complexes to attain highly efficient OLEDs with narrow-band emission

2021 ◽  
Author(s):  
zhy wang ◽  
Lin-Xi Shi ◽  
Liang-Jin Xu ◽  
Li-Yi Zhang ◽  
Jin-Yun Wang ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Narrow Band ◽  
Color Purity ◽  
Band Emission ◽  
Full Color ◽  
Broad Emission ◽  
Color Displays ◽  
Heteronuclear Complexes ◽  
Key Factor ◽  
High Color Purity

High color purity with narrow-band emission is a key factor for full-color displays. However, phosphorescent metal complexes typically exhibit broad emission with a full width at half maxima (FWHM) of...

scholarly journals Characterization of Series Resistance and Mobility Degradation Parameter and Optimizing Choice of Oxide Thickness in Thin OxideN-Channel MOSFET

2011 ◽  
Vol 2011 ◽  
pp. 1-4 ◽  
Author(s):  
Noureddine Maouhoub ◽  
Khalid Rais
Keyword(s):  
Series Resistance ◽  
Classical Model ◽  
Drain Current ◽  
Oxide Thickness ◽  
Exponential Model ◽  
Short Channel ◽  
Mobility Degradation ◽  
Strong Inversion ◽  
Roughness Amplitude ◽  
Two Parameters

We present two methods to extract the series resistance and the mobility degradation parameter in short-channel MOSFETs. The principle of the first method is based on the comparison between the exponential model and the classical model of effective mobility and for the second method is based on directly calculating the two parameters by solving a system of two equations obtained by using two different points in strong inversion at small drain bias from the characteristic (). The results obtained by these techniques have shown a better agreement with data measurements and allowed in the same time to determine the surface roughness amplitude and its influence on the maximum drain current and give the optimal oxide thickness.

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