Design Low Voltage FGMOS Operational Amplifier for Power Applications

2012 ◽  
Vol 433-440 ◽  
pp. 4189-4193 ◽  
Author(s):  
M. B. K. Jamal ◽  
S. P. Chew ◽  
B. I. Khadijah ◽  
S. B. M. Noormiza
Keyword(s):  
Low Power ◽  
Low Voltage ◽  
Electronic Device ◽  
Supply Voltage ◽  
High Gain ◽  
Battery Life ◽  
Op Amp ◽  
Integration Density ◽  
Low Power Dissipation ◽  
High Bandwidth

Due to the rise in demand for portable electronic device, low power and low voltage circuit design is extremely important for the appliances like computers, laptops, mobile phones and etc. Low power dissipation results in longer battery life and better integration density. This can be achieved by designing a modified low voltage op amp. The design of low voltage op amp in this paper is the combination of several low voltage analog cells. The modified low power op amp in this paper is built based on low voltage basic op amp. In this paper, the design objective is to achieve certain criteria such as supply voltage as low as 1 V, high gain more than 40 dB, low power consumption and high bandwidth. The use of FGMOS would increase the operating range of op amp through programming the threshold voltage of the FGMOS. This project is simulated using Silvaco Gateway and Expert.

COMPOSITE TRANSISTOR CELL USING DYNAMIC BODY BIAS FOR HIGH GAIN AND LOW-VOLTAGE APPLICATIONS

2014 ◽  
Vol 23 (08) ◽  
pp. 1450108 ◽  
Author(s):  
VANDANA NIRANJAN ◽  
ASHWANI KUMAR ◽  
SHAIL BALA JAIN
Keyword(s):  
Low Power ◽  
Large Scale ◽  
Low Voltage ◽  
Supply Voltage ◽  
High Gain ◽  
Signal Frequency ◽  
Output Impedance ◽  
Self Cascode ◽  
Intrinsic Gain ◽  
Body Bias

In this work, a new composite transistor cell using dynamic body bias technique is proposed. This cell is based on self cascode topology. The key attractive feature of the proposed cell is that body effect is utilized to realize asymmetric threshold voltage self cascode structure. The proposed cell has nearly four times higher output impedance than its conventional version. Dynamic body bias technique increases the intrinsic gain of the proposed cell by 11.17 dB. Analytical formulation for output impedance and intrinsic gain parameters of the proposed cell has been derived using small signal analysis. The proposed cell can operate at low power supply voltage of 1 V and consumes merely 43.1 nW. PSpice simulation results using 180 nm CMOS technology from Taiwan Semiconductor Manufacturing Company (TSMC) are included to prove the unique results. The proposed cell could constitute an efficient analog Very Large Scale Integration (VLSI) cell library in the design of high gain analog integrated circuits and is particularly interesting for biomedical and instrumentation applications requiring low-voltage low-power operation capability where the processing signal frequency is very low.

Design of a Rail-to-Rail Operational Amplifier with Low Supply Voltage and Low Power Dissipation

2013 ◽  
Vol 380-384 ◽  
pp. 3275-3278
Author(s):  
Zhan Peng Jiang ◽  
Rui Xu ◽  
Hai Huang ◽  
Chang Chun Dong
Keyword(s):  
Power Dissipation ◽  
Operational Amplifier ◽  
Supply Voltage ◽  
High Gain ◽  
Op Amp ◽  
Rail To Rail ◽  
Dc Gain ◽  
Low Power Dissipation ◽  
Static Power ◽  
Low Supply Voltage

An rail-to-rail operational amplifier is presented in this paper, which is designed by with two op amp, the first level of the structure is the complementary differential structure which will providing input for the operational amplifier, the second level is designed with the structure of folding cascode to get a high gain. The operational amplifier is designed with the TSMC 0.35u m3.3VCMOS mixed analog-digital technology library. The simulated results show that the operational amplifier has a DC gain of 110dB,a GBW of 9.5MHz,a static power dissipation of 0.95mW,a phase margin of 73°,a voltage slew rate of 8.2V/μS,an input and output range of 0-3.3V,when operating at 3.3V power supply and a 20pF output load.

scholarly journals A Low-Voltage, Ultra-Low-Power, High-Gain Operational Amplifier Design for Portable Wearable Devices

Electronics ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 74
Author(s):  
Na Bai ◽  
Xiaolong Li ◽  
Yaohua Xu
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Operational Amplifier ◽  
Low Voltage ◽  
Simulation Analysis ◽  
Supply Voltage ◽  
High Gain ◽  
Common Mode ◽  
Ultra Low Power ◽  
The Common

Based on the SMIC 0.13 um CMOS technology, this paper uses a 0.8 V supply voltage to design a low-voltage, ultra-low-power, high-gain, two-stage, fully differential operational amplifier. Through the simulation analysis, when the supply voltage is 0.8 V, the design circuit meets the ultra-low power consumption and also has the characteristic of high gain. The five-tube, fully differential, and common-source amplifier circuits provide the operational amplifier with high gain and large swing. Unlike the traditional common-mode feedback, this paper uses the output of the common-mode feedback as the bias voltage of the five-tube operational transconductance amplifier load, which reduces the design cost of the circuit; the structure involves self-cascoding composite MOS, which makes the common-mode feedback loop more sensitive. The frequency compensation circuit adopts Miller compensation technology with zero-pole separation, which increases the stability of the circuit. The input of the circuit uses the current mirror. A small reference current is chosen to reduce power consumption. A detailed performance simulation analysis of this operational amplifier circuit is carried out on the Cadence spectre platform. The open-loop gain of this operational amplifier is 74.1 dB, the phase margin is 61°, the output swing is 0.7 V, the common-mode rejection ratio is 109 dB, and the static power consumption is only 11.2 uW.

A Low Power High Gain CMOS LNA with Multiple-Feedback Network for Low Voltage UWB Receiver

2016 ◽  
Vol 25 (06) ◽  
pp. 1650051 ◽  
Author(s):  
Lv Zhao ◽  
Chunhua Wang
Keyword(s):  
Low Power ◽  
Low Voltage ◽  
Supply Voltage ◽  
High Gain ◽  
Low Noise ◽  
Common Source ◽  
Cmos Process ◽  
Chip Area ◽  
Feedback Network ◽  
Uwb Receiver

In this paper, a high gain low voltage low power Complementary Metal Oxide Semiconductor (CMOS) Low-noise Amplifier (LNA) using Chartered 0.18[Formula: see text][Formula: see text]m CMOS process for Ultra-wideband (UWB) receiver applications is presented. A novel multiple-feedback network constructed by the shunt feedback resistor with a transformer is adopted to realize desirable bandwidth extension and less chip area occupation in the common-source stage. All the cascaded transistors are configured by current-reuse structure and adjusted by forward body bias technique to further reduce supply voltage and power dissipation. The post-layout simulation results demonstrate that the proposed 3.4–10.1[Formula: see text]GHz UWB LNA accomplishes a maximum gain of 14.26[Formula: see text]dB with only 2.33[Formula: see text]mW power consumption at 0.8[Formula: see text]V supply voltage, while Noise Figure (NF) is 1.49–3.41[Formula: see text]dB and the chip area is 0.46[Formula: see text]mm2 including test pads (core area is 0.23[Formula: see text]mm2).

Improvement of Gain Accuracy and CMRR of Low Power Instrumentation Amplifier Using High Gain Operational Amplifiers

2020 ◽  
Vol 12 (3) ◽  
pp. 168-174
Author(s):  
Rashmi Sahu ◽  
Maitraiyee Konar ◽  
Sudip Kundu
Keyword(s):  
Low Power ◽  
Building Blocks ◽  
High Gain ◽  
The Other ◽  
Operational Amplifiers ◽  
Instrumentation Amplifier ◽  
Biomedical Signals ◽  
Op Amp ◽  
Op Amps ◽  
Multi Stage

Background: Sensing of biomedical signals is crucial for monitoring of various health conditions. These signals have a very low amplitude (in μV) and a small frequency range (<500 Hz). In the presence of various common-mode interferences, biomedical signals are difficult to detect. Instrumentation amplifiers (INAs) are usually preferred to detect these signals due to their high commonmode rejection ratio (CMRR). Gain accuracy and CMRR are two important parameters associated with any INA. This article, therefore, focuses on the improvement of the gain accuracy and CMRR of a low power INA topology. Objective: The objective of this article is to achieve high gain accuracy and CMRR of low power INA by having high gain operational amplifiers (Op-Amps), which are the building blocks of the INAs. Methods: For the implementation of the Op-Amps and the INAs, the Cadence Virtuoso tool was used. All the designs and implementation were realized in 0.18 μm CMOS technology. Results: Three different Op-Amp topologies namely single-stage differential Op-Amp, folded cascode Op-Amp, and multi-stage Op-Amp were implemented. Using these Op-Amp topologies separately, three Op-Amp-based INAs were realized and compared. The INA designed using the high gain multistage Op-Amp topology of low-frequency gain of 123.89 dB achieves a CMRR of 164.1 dB, with the INA’s gain accuracy as good as 99%, which is the best when compared to the other two INAs realized using the other two Op-Amp topologies implemented. Conclusion: Using very high gain Op-Amps as the building blocks of the INA improves the gain accuracy of the INA and enhances the CMRR of the INA. The three Op-Amp-based INA designed with the multi-stage Op-Amps shows state-of-the-art characteristics as its gain accuracy is 99% and CMRR is as high as 164.1 dB. The power consumed by this INA is 29.25 μW by operating on a power supply of ±0.9V. This makes this INA highly suitable for low power measurement applications.

scholarly journals A 0.3 V Rail-to-Rail Ultra-Low-Power OTA with Improved Bandwidth and Slew Rate

2021 ◽  
Vol 11 (2) ◽  
pp. 19
Author(s):  
Francesco Centurelli ◽  
Riccardo Della Sala ◽  
Pietro Monsurrò ◽  
Giuseppe Scotti ◽  
Alessandro Trifiletti
Keyword(s):  
Low Power ◽  
Low Voltage ◽  
Supply Voltage ◽  
Cmos Process ◽  
Slew Rate ◽  
Large Signal ◽  
Output Stage ◽  
Ultra Low Power ◽  
Input Stage ◽  
Rail To Rail

In this paper, we present a novel operational transconductance amplifier (OTA) topology based on a dual-path body-driven input stage that exploits a body-driven current mirror-active load and targets ultra-low-power (ULP) and ultra-low-voltage (ULV) applications, such as IoT or biomedical devices. The proposed OTA exhibits only one high-impedance node, and can therefore be compensated at the output stage, thus not requiring Miller compensation. The input stage ensures rail-to-rail input common-mode range, whereas the gate-driven output stage ensures both a high open-loop gain and an enhanced slew rate. The proposed amplifier was designed in an STMicroelectronics 130 nm CMOS process with a nominal supply voltage of only 0.3 V, and it achieved very good values for both the small-signal and large-signal Figures of Merit. Extensive PVT (process, supply voltage, and temperature) and mismatch simulations are reported to prove the robustness of the proposed amplifier.

scholarly journals Analysis On Power Gating Circuits Based Low Power VLSI Circuits (BCD Adder)

2021 ◽  
Vol 2089 (1) ◽  
pp. 012080
Author(s):  
M. Srinivas ◽  
K.V. Daya Sagar
Keyword(s):  
Energy Consumption ◽  
Low Power ◽  
Power Dissipation ◽  
Supply Voltage ◽  
Oxide Thickness ◽  
Cmos Technology ◽  
Digital Circuit ◽  
Leakage Power ◽  
Vlsi Circuits ◽  
Battery Life

Abstract Currently, energy consumption in the digital circuit is a key design parameter for emerging mobile products. The principal cause of the power dissipation during idle mode is leakage currents, which are rising dramatically. Sub-threshold leakage is increased by the scaling of threshold voltage when gate current leakage increases because oxide thickness is scaled. With rising demands for mobile devices, leakage energy consumption has received even greater attention. Since a mobile device spends most of its time in standby mode, leakage power savings need to prolong the battery life. That is why low power has become a significant factor in CMOS circuit design. The required design and simulation of an AND gate with the BSIM4 MOS parameter model at 27 0C, supply voltage of 0,70V with CMOS technology of 65nm are the validation of the suitability of the proposed circuit technology. AND simulation. The performance parameters for the two AND input gate are compared with the current MTCMOS and SCCMOS techniques, such as sub-threshold leakage power dissipations in active and standby modes, the dynamic dissipation, and propagation period. The proposed hybrid super cutoff complete stack technique compared to the current MTCMOS technology shows a reduction in sub-threshold dissipation power dissipation by 3. 50x and 1.15x in standby modes and active modes respectively. The hybrid surface-cutting technique also shows savings of 2,50 and 1,04 in power dissipation at the sub-threshold in standby modes and active modes compared with the existing SCCMOS Technique.

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