Mechanical Property Evaluation of ZnO Thin Films Using Nanoindentation and Scanning Probe Microscope

2008 ◽  
Vol 55-57 ◽  
pp. 609-612 ◽  
Author(s):  
Te Hua Fang ◽  
S.H. Kang
Keyword(s):  
Thin Films ◽  
Mechanical Property ◽  
Scanning Probe ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
Surface Geometry ◽  
Force Microscopy ◽  
Atomic Force ◽  
Property Evaluation ◽  
Probe Microscope

The characteristics of morphology, friction and nanotribological properties of ZnO thin films were achieved by means of x-ray diffraction, scanning probe microscopy (SPM), and nanoindentation. The ZnO thin films were deposited by a radio frequency magnetron sputtering system. Surface geometry and friction analysis were derived from atomic force microscopy/friction force microscopy (AFM/FFM). The hardness and Young’s modulus of the ZnO thin films were investigated by nanoindentation measurements with a Berkovich indenter. The films exhibited an increase in the hardness with decreasing load i.e. the indentation size effect (ISE) was found. In addition, the nanoscratched mechanical property of the films was discussed.

Structural and Magnetic Investigation of Cu, Co Substituted NiFe2O4 Thin Films by Scanning Probe Microscopy (AFM, MFM)

2015 ◽  
Vol 830-831 ◽  
pp. 589-591 ◽  
Author(s):  
Hakikat Sharma ◽  
N.S. Negi
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Microstructural Analysis ◽  
Secondary Phase ◽  
Scanning Probe ◽  
Force Microscopy ◽  
Atomic Force ◽  
Magnetic Investigation ◽  
Probe Microscope ◽  
Xrd Patterns

In the present study we prepared NiFe2O4, Ni0.95Cu0.05Fe2O4and Ni0.94Cu0.05Co0.01Fe2O4thin films by metallo-organic decomposition method (MOD) using spin coating technique. The samples were characterized by XRD. XRD patterns of thin films confirmed the formation of cubic spinel structure without any secondary phase. For microstructural analysis we characterized samples by Scanning Probe Microscope (SPM). From Atomic force microscopy (AFM), we analyzed surface morphology, calculated grain size, roughness and porosity. It has been found that grain size and roughness affected by Cu, Co substitution. After this we carried out magnetic force microscopy (MFM) on the samples. Effect of substitution on magnetic grains was observed from MFM.

Synthesis and Atomic Force Microscopy Contact Current Images of Aluminum Doped ZnO Thin Films

2010 ◽  
Vol 644 ◽  
pp. 109-112
Author(s):  
N. Muñoz Aguirre ◽  
J. Eduardo Rivera-López ◽  
L. Martínez Pérez ◽  
Pedro A. Tamayo Meza
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Spray Pyrolysis Technique ◽  
Water Mist ◽  
Zno Thin Films ◽  
Electrical Characteristics ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Doped Zno

Aluminum doped ZnO thin films were synthesized by the water-mist assisted spray pyrolysis technique. The structural characterization by means of X-Ray diffraction measurements is reported. By means of Atomic Force Microscopy, the superficial electrical characteristics of the thin films are studied. Specifically, contact current images are shown and discussed. It is important to emphasize that in spite of no voltage is applied to the Atomic Force Microscopy contact conductive tip, current images are getting.

ON THE ELECTRONIC TRANSPORT MECHANISM IN MAGNETRON-SPUTTERED POLYCRYSTALLINE ZnO THIN FILMS

2010 ◽  
Vol 24 (31) ◽  
pp. 6079-6090 ◽  
Author(s):  
I. I. RUSU ◽  
M. SMIRNOV ◽  
G. G. RUSU ◽  
A. P. RAMBU ◽  
G. I. RUSU
Keyword(s):  
Thin Films ◽  
Electronic Transport ◽  
Hexagonal Structure ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Crystallite Boundary

Zinc oxide ( ZnO ) thin films were deposited onto glass substrates by d.c. magnetron sputtering. The structural analysis, by X-ray diffraction and atomic force microscopy, indicate that the studied films are polycrystalline and have a wurtzite (hexagonal) structure. The film crystallites are preferentially oriented with (002) planes parallel to the substrates. The mechanism of electronic transport is explained in terms of Seto's model elaborated for polycrystalline semiconducting films (crystallite boundary trapping theory). Some parameters of used model (impurity concentration, density and energy of the trapping states, etc.) have been calculated. The optical bandgap (Eg0 = 3.28–3.37 eV ) was determined from absorption spectra.

scholarly journals Structural and optical properties of Fe- doped ZnO thin films prepared by Sol–Gel spin coating process and their photocatalytic activities

2019 ◽  
Vol 17 (40) ◽  
pp. 95-107
Author(s):  
Selma M. H. Al-Jawad
Keyword(s):  
Thin Films ◽  
Organic Dyes ◽  
Sol Gel ◽  
Hexagonal Wurtzite Structure ◽  
Band Gap Energy ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Doped Zno

Pure and Fe-doped zinc oxide nanocrystalline films were preparedvia a sol–gel method using -C for 2 h.The thin films were prepared and characterized by X-ray diffraction(XRD), atomic force microscopy (AFM), field emission scanningelectron microscopy (FE-SEM) and UV- visible spectroscopy. TheXRD results showed that ZnO has hexagonal wurtzite structure andthe Fe ions were well incorporated into the ZnO structure. As the Felevel increased from 2 wt% to 8 wt%, the crystallite size reduced incomparison with the pure ZnO. The transmittance spectra were thenrecorded at wavelengths ranging from 300 nm to 1000 nm. Theoptical band gap energy of spin-coated films also decreased as Fedoping concentration increased. In particular, their optical band gapenergies were 3.75, 3.6, 3.5, 3.45 and 3.3 eV doping concentration of0%, 2%, 4%, 6% and 8% Fe, respectively. The performance of thepure and doped ZnO thin films was examined for the photocatalyticactivity using organic dyes (methyl orange, methyl blue, methylviolet). The samples ZnO with concentration of Fe showed increasedphotocatalytic activity with an optimal maximum performance at0.8 wt%.

Effects of annealing parameters on residual stress and piezoelectric performance of ZnO thin films studied by X-ray diffraction and atomic force microscopy

2019 ◽  
Vol 52 (5) ◽  
pp. 951-959
Author(s):  
Jie-Nan Shen ◽  
Yi-Bo Zeng ◽  
Ma-Hui Xu ◽  
Lin-Hui Zhu ◽  
Bao-Lin Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Residual Stresses ◽  
Annealing Temperature ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Piezoelectric Performance

The residual stresses and piezoelectric performance of ZnO thin films under different annealing parameters have been studied by X-ray diffraction and atomic force microscopy (AFM). First, ZnO thin films with a thickness of 800 nm were grown on a Pt/Ti/SiO2/Si substrate by magnetron sputtering. Second, the orthogonal experimental method was selected to study the effects of annealing temperature, annealing time and oxygen content on the residual stresses of the ZnO thin films. The residual stresses of the ZnO thin films were measured by X-ray diffraction and the sin2ψ method. Finally, the three-dimensional topography and piezoelectric performance of the ZnO thin films were measured by AFM. The results showed that the oxygen content during the annealing process has the greatest effect on the residual stress, followed by the annealing temperature and annealing time. A minimum residual stress and optimal piezoelectric performance can be realized by annealing the ZnO thin film in pure oxygen at 723 K for 30 min.

STRUCTURAL AND OPTICAL PROPERTIES OF ZnO THIN FILMS GROWN ON FLEXIBLE POLYIMIDE SUBSTRATES

2007 ◽  
Vol 14 (04) ◽  
pp. 801-805 ◽  
Author(s):  
DONG ICK SON ◽  
JUNG WOOK LEE ◽  
DEA UK LEE ◽  
TAE WHAN KIM ◽  
WON KOOK CHOI
Keyword(s):  
Thin Films ◽  
Zno Thin Films ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Diffraction Patterns ◽  
Microscopy Images

Nominally undoped ZnO thin films were grown on polyimide (PI) substrates at various temperatures by using radio-frequency magnetron sputtering. Atomic force microscopy images showed that the root mean squares of the average surface roughnesses for the ZnO thin films grown on the PI substrates at 27°C, 100°C, 200°C, and 300°C were 4.08, 4.50, 4.18, and 3.89 nm, respectively. X-ray diffraction patterns showed that the crystallinity of the ZnO films had a preferential (0001) direction and that the full width at half-maxima for the (0002) ZnO diffraction peak for the ZnO thin films grown on the PI substrates at 27°C, 100°C, 200°C, and 300°C were 0.22, 0.22, 0.22, and 0.23, respectively. The average optical transmittances in the visible ranges between 550 and 750 nm for the ZnO /PI heterostructures grown at 27°C, 100°C, 200°C, and 300°C were 87%, 83%, 87%, and 78%, respectively.

SCANNING PROBE MICROSCOPY BASED NANOSCALE PATTERNING AND FABRICATION

COSMOS ◽  
2007 ◽  
Vol 03 (01) ◽  
pp. 1-21 ◽  
Author(s):  
XIAN NING XIE ◽  
HONG JING CHUNG ◽  
ANDREW THYE SHEN WEE
Keyword(s):  
Integrated Circuits ◽  
Scanning Probe Microscopy ◽  
Scanning Probe ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Force Microscopy ◽  
Nanoscale Patterning ◽  
Atomic Force ◽  
Probe Microscope ◽  
Molecular Manipulation

Nanotechnology is vital to the fabrication of integrated circuits, memory devices, display units, biochips and biosensors. Scanning probe microscope (SPM) has emerged to be a unique tool for materials structuring and patterning with atomic and molecular resolution. SPM includes scanning tunneling microscopy (STM) and atomic force microscopy (AFM). In this chapter, we selectively discuss the atomic and molecular manipulation capabilities of STM nanolithography. As for AFM nanolithography, we focus on those nanopatterning techniques involving water and/or air when operated in ambient. The typical methods, mechanisms and applications of selected SPM nanolithographic techniques in nanoscale structuring and fabrication are reviewed.

Nanocrystalline Solutions as Precursors to The Spray Deposition of Cdte Thin Films

1995 ◽  
Vol 382 ◽  
Author(s):  
Martin Pehnt ◽  
Douglas L. Schulz ◽  
Calvin J. Curtis ◽  
Helio R. Moutinho ◽  
Amy Swartzlander ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Grain Size ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Cdte Nanoparticles ◽  
Atomic Force ◽  
Vis Spectroscopy ◽  
Cdte Thin Films

ABSTRACTIn this article we report the first nanoparticle-derived route to smooth, dense, phase-pure CdTe thin films. Capped CdTe nanoparticles were prepared by injection of a mixture of Cd(CH3)2, (n-C8H17)3 PTe and (n-C8H17)3P into (n-C8H17)3PO at elevated temperatures. The resultant nanoparticles 32-45 Å in diameter were characterized by x-ray diffraction, UV-Vis spectroscopy, transmission electron microscopy, thermogravimetric analysis and energy dispersive x-ray spectroscopy. CdTe thin film deposition was accomplished by dissolving CdTe nanoparticles in butanol and then spraying the solution onto SnO2-coated glass substrates at variable susceptor temperatures. Smooth and dense CdTe thin films were obtained using growth temperatures approximately 200 °C less than conventional spray pyrolysis approaches. CdTe films were characterized by x-ray diffraction, UV-Vis spectroscopy, atomic force microscopy, and Auger electron spectroscopy. An increase in crystallinity and average grain size as determined by x-ray diffraction was noted as growth temperature was increased from 240 to 300 °C. This temperature dependence of film grain size was further confirmed by atomic force microscopy with no remnant nanocrystalline morphological features detected. UV-Vis characterization of the CdTe thin films revealed a gradual decrease of the band gap (i.e., elimination of nanocrystalline CdTe phase) as the growth temperature was increased with bulk CdTe optical properties observed for films grown at 300 °C.

Studies of Nanomechanical Properties of Pulsed Laser Deposited NbN films on Si Using Nanoindentation

2012 ◽  
Vol 1424 ◽  
Author(s):  
M. A. Mamun ◽  
A. H. Farha ◽  
Y. Ufuktepe ◽  
H. E. Elsayed-Ali ◽  
A. A. Elmustafa
Keyword(s):  
Thin Films ◽  
Pulsed Laser ◽  
Niobium Nitride ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Force Microscopy ◽  
Atomic Force ◽  
Wide Range ◽  
Pile Up ◽  
Average Modulus

ABSTRACTNanomechanical and structural properties of pulsed laser deposited niobium nitride thin films were investigated using X-ray diffraction, atomic force microscopy, and nanoindentation. NbN film reveals cubic δ-NbN structure with the corresponding diffraction peaks from the (111), (200), and (220) planes. The NbN thin films depict highly granular structure, with a wide range of grain sizes that range from 15-40 nm with an average surface roughness of 6 nm. The average modulus of the film is 420±60 GPa, whereas for the substrate the average modulus is 180 GPa, which is considered higher than the average modulus for Si reported in the literature due to pile-up. The hardness of the film increases from an average of 12 GPa for deep indents (Si substrate) measured using XP CSM and load control (LC) modes to an average of 25 GPa measured using the DCM II head in CSM and LC modules. The average hardness of the Si substrate is 12 GPa.

scholarly journals Influence of the growth parameters of TiO2 thin films deposited by the MOCVD method

Cerâmica ◽  
2002 ◽  
Vol 48 (305) ◽  
pp. 38-42 ◽  
Author(s):  
M. I. B. Bernardi ◽  
E. J. H. Lee ◽  
P. N. Lisboa-Filho ◽  
E. R. Leite ◽  
E. Longo ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Parameters ◽  
Structural Characteristics ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Tio2 Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Deposition Parameters

The synthesis of TiO2 thin films was carried out by the Organometallic Chemical Vapor Deposition (MOCVD) method. The influence of deposition parameters used during growth on the final structural characteristics was studied. A combination of the following experimental parameters was studied: temperature of the organometallic bath, deposition time, and temperature and substrate type. The high influence of those parameters on the final thin film microstructure was analyzed by scanning electron microscopy with electron dispersive X-ray spectroscopy, atomic force microscopy and X-ray diffraction.

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