The Crystal Structural Properties of Sputtered ZnO Films Containing Internal Stress

The ZnO films were deposited on Si substrate by radio frequency (RF) magnetron sputtering. The effects of the Ar/O2 ratios on the structural characteristics and the internal stress in the ZnO films have been studied. The SEM images shows that the ZnO grains are nano-sized and tightly packed. The ZnO films are highly c-axis oriented with the (002) plane parallel to the substrate. The samples has a stress of the order of 1.0 × 1010 dyn/cm2. It is found that the size of ZnO crystal grains distinctly depends on the stress in the ZnO films. In order to deposite ZnO films with good crystalline quality, the stress caused by the growth process can be depressed by adjusting the Ar/O2 ratios.

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Optical and Electronic Properties of Mn-Doped ZnO Films Synthesized by RF Magnetron Sputtering

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.139-141.80 ◽

2010 ◽

Vol 139-141 ◽

pp. 80-83

Author(s):

Zhao Feng Wu ◽

Yu Juan Cao ◽

Xue Mei Wu ◽

Lan Jian Zhuge

Keyword(s):

Magnetron Sputtering ◽

Rf Magnetron Sputtering ◽

Optical Transmittance ◽

Host Lattice ◽

Atomic Fraction ◽

Zno Films ◽

The Status ◽

Doped Zno ◽

Zno Crystal ◽

Mn Doped

. Zn1-xMnxO films are prepared by radio frequency (RF) magnetron sputtering method. The wurtzite ZnO crystal can be well retained up to a Mn composition of 6.7% and doped Mn ions substituted into Zn sites of ZnO host lattice. All the samples show high transparency over the wavelengths from 450 to 800 nm. Optical transmittance study showed an increase in the bandgap (Eg) with increase in Mn atomic fraction x following Eg=3.26+1.43x eV. Furthermore, the midgap absorption around 420 nm (3 eV) in Mn doped ZnO films suggest that there are impurity levels created by doped Mn ions. The room temperature resistivities of the samples show an increase with the increase of Mn content, which indicates that the doped element is at the status of deep levels.

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Structural, Optical and Electronic Properties of Cu-Doped ZnO Films Synthesized by RF Magnetron Sputtering

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.97-101.1198 ◽

2010 ◽

Vol 97-101 ◽

pp. 1198-1202 ◽

Cited By ~ 2

Author(s):

Zhao Feng Wu ◽

Qin Yan Xu ◽

Xue Mei Wu ◽

Lan Jian Zhuge ◽

Bo Hong ◽

...

Keyword(s):

Magnetron Sputtering ◽

Rf Magnetron Sputtering ◽

Host Lattice ◽

Zno Films ◽

Band Gap Engineering ◽

The Status ◽

Deep Donor ◽

Impurity Bands ◽

Doped Zno ◽

Zno Crystal

Zn1-xCuxO films were prepared by radio frequency (RF) magnetron sputtering method. The wurtzite ZnO crystal can be well retained up to a Cu composition of 10% and doped Cu ions substituted into Zn sites of ZnO host lattice. All the samples show high transparency over the wavelengths from 400 to 1000 nm. The room temperature (RT) resistivity shows an increase in Mn doping samples, which indicates that the doped element is at the status of deep donor levels. The decrease in the bandgap in Cu doped ZnO films rather than in pure ZnO film indicates that there are impurity bands created by Cu 3d orbital or strong d-p coupling between Cu and O in our samples. In addition, photoluminescence (PL) spectra show UV emission at ~3.19 eV shifts to lower energy side with Cu doping, indicating the possibility of band-gap engineering in Zn1-xCuxO films.

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INFLUENCE OF SUBSTRATE MATERIALS ON THE STRUCTURAL PROPERTIES OF ZNO THIN FILMS PREPARED BY RF MAGNETRON SPUTTERING

Jurnal Teknologi ◽

10.11113/jt.v76.5650 ◽

2015 ◽

Vol 76 (9) ◽

Author(s):

S. Ahmad ◽

N. D. Md Sin ◽

Liyana Roslan ◽

Hazriel Faizal Pahroraji ◽

S. K. Alias ◽

...

Keyword(s):

Grain Size ◽

Magnetron Sputtering ◽

Structural Properties ◽

Rf Magnetron Sputtering ◽

Zno Films ◽

Rf Power ◽

Si Substrate ◽

Sensor Applications ◽

Average Grain Size ◽

Influence Of Substrate

ZnO films were deposited on glass and SiO2/Si substrate by RF magnetron sputtering technique using high purity ZnO target at various RF power. The structural properties of ZnO thin film deposited on glass and SiO2/Si substrate were studied. The structural properties of the films were carried out by the surface profiler and field emission scanning electron microscope (FESEM). It was found that the average grain size of ZnO increases with increasing RF power and ZnO deposited on SiO2/Si substrate with RF power between 50-150 Watt gave the lower average grain size which is desired for the gas sensor applications.

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Violet luminescence emitted from ZnO films deposited on Si substrate by rf magnetron sputtering

Applied Surface Science ◽

10.1016/s0169-4332(02)00570-6 ◽

2002 ◽

Vol 201 (1-4) ◽

pp. 123-128 ◽

Cited By ~ 88

Author(s):

Q.P Wang ◽

D.H Zhang ◽

Z.Y Xue ◽

X.T Hao

Keyword(s):

Magnetron Sputtering ◽

Rf Magnetron Sputtering ◽

Zno Films ◽

Si Substrate ◽

Violet Luminescence

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The deposition and wet etching of Mg-doped ZnO films and their applications for solidly mounted resonators

RSC Advances ◽

10.1039/d0ra00659a ◽

2020 ◽

Vol 10 (16) ◽

pp. 9672-9677

Author(s):

Chengzhang Han ◽

Haoran Ma ◽

Yanping Wang ◽

Jing Liu ◽

Lihua Teng ◽

...

Keyword(s):

Magnetron Sputtering ◽

Radio Frequency ◽

Rf Magnetron Sputtering ◽

Wet Etching ◽

Zno Films ◽

Piezoelectric Film ◽

Si Substrate ◽

Au Electrode ◽

Doped Zno ◽

Mg Doped

In this report, a solidly mounted resonator (SMR), consisting of an Au electrode, Mg-doped ZnO (MgXZn1−XO) piezoelectric film and Bragg acoustic reflector, was fabricated on a Si substrate by radio frequency (RF) magnetron sputtering.

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Properties of Sputter Deposited ZnO Films Co-doped with Lithium and Phosphorus

MRS Proceedings ◽

10.1557/opl.2013.4 ◽

2013 ◽

Vol 1494 ◽

pp. 77-82

Author(s):

T. N. Oder ◽

A. Smith ◽

M. Freeman ◽

M. McMaster ◽

B. Cai ◽

...

Keyword(s):

Rf Magnetron Sputtering ◽

Zno Films ◽

X Ray Diffraction ◽

X Ray ◽

Sapphire Substrates ◽

Hall Effect Measurements ◽

Sputter Deposited ◽

P Type ◽

Post Deposition ◽

Co Doped

ABSTRACTThin films of ZnO co-doped with lithium and phosphorus were deposited on sapphire substrates by RF magnetron sputtering. The films were sequentially deposited from ultra pure ZnO and Li3PO4 solid targets. Post deposition annealing was carried using a rapid thermal processor in O2 and N2 at temperatures ranging from 500 °C to 1000 °C for 3 min. Analyses performed using low temperature photoluminescence spectroscopy measurements reveal luminescence peaks at 3.359, 3.306, 3.245 eV for the co-doped samples. The x-ray diffraction 2θ-scans for all the films showed a single peak at about 34.4° with full width at half maximum of about 0.17°. Hall Effect measurements revealed conductivities that change from p-type to n-type over time.

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Effects of the Sputtering Time of AlN Buffer Layer on the Quality of ZnO Thin Films

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.881-883.1117 ◽

2014 ◽

Vol 881-883 ◽

pp. 1117-1121 ◽

Cited By ~ 1

Author(s):

Xiang Min Zhao

Keyword(s):

Thin Films ◽

Buffer Layer ◽

Rf Magnetron Sputtering ◽

Buffer Layers ◽

Zno Thin Films ◽

Zno Films ◽

Si Substrates ◽

Atomic Force ◽

Structure Morphology ◽

Aln Buffer

ZnO thin films with different thickness (the sputtering time of AlN buffer layers was 0 min, 30 min,60 min, and 90 min, respectively) were prepared on Si substrates using radio frequency (RF) magnetron sputtering system.X-ray diffraction (XRD), atomic force microscope (AFM), Hall measurements setup (Hall) were used to analyze the structure, morphology and electrical properties of ZnO films.The results show that growth are still preferred (002) orientation of ZnO thin films with different sputtering time of AlN buffer layer,and for the better growth of ZnO films, the optimal sputtering time is 60 min.

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Structural characteristics and mechanical properties of Ti(Cr) films produced on Si substrate

Thin Solid Films ◽

10.1016/j.tsf.2009.02.117 ◽

2009 ◽

Vol 517 (19) ◽

pp. 5715-5721

Author(s):

Fanhao Zeng ◽

Xiang Xiong ◽

Guodong Li ◽

Boyun Huang

Keyword(s):

Mechanical Properties ◽

Structural Characteristics ◽

Si Substrate

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Deposition of Piezoelectric ZnO Films by RF Magnetron Sputtering and its Application to SAW Devices

MRS Proceedings ◽

10.1557/proc-1035-l05-16 ◽

2007 ◽

Vol 1035 ◽

Cited By ~ 1

Author(s):

Seol Hee Choi ◽

Chan Hyoung Kang

Keyword(s):

Magnetron Sputtering ◽

Rf Magnetron Sputtering ◽

Silicon Wafers ◽

Center Frequency ◽

High Resistivity ◽

Chemical Vapor Deposition Method ◽

Zno Films ◽

Optimum Process ◽

Optimum Conditions ◽

Saw Devices

AbstractHighly c-axis oriented, dense, and fine-grained polycrystalline ZnO films with smooth surface and high resistivity were deposited on 4 inch silicon wafers by employing ZnO targets in a radio-frequency (RF) magnetron sputtering system. By changing applied RF power, substrate temperature and O2/Ar gas ratio, the optimum process parameters were found to be 150 W, 200 °C and 30/70, respectively. Applying the ZnO films deposited under these optimum conditions, surface acoustic wave (SAW) devices of ZnO/IDT/SiO2/Si structure were fabricated by conventional photolithography and etching processes. The interdigital transducers (IDT), made of the aluminum deposited by DC magnetron sputter, were patterned as 2.5/2.5 μm of finger width/spacing. Another type of SAW filter of IDT/ZnO/diamond/Si structure was fabricated. In this structure, high-quality nanocrystalline diamond (NCD) films were deposited on 4 inch silicon wafers by direct current (DC) plasma assisted chemical vapor deposition method using H2-CH4 mixture as precursor gas. On the top of the diamond films, ZnO films were deposited under the optimum conditions. The aluminum IDT pattern was fabricated on the ZnO/diamond layered films. The characteristics of the fabricated SAW devices were evaluated in terms of center frequency, insertion loss, and wave propagation velocity.

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