Effect of Deposition Parameters on Crystallization of RF Magnetron Sputtered BST Thin Films

2007 ◽  
Vol 336-338 ◽  
pp. 79-82 ◽  
Author(s):  
T.J. Zhang ◽  
S.Z. Li ◽  
B.S. Zhang ◽  
W.H. Huang ◽  
R.K. Pan
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
X Ray ◽  
Bst Thin Films ◽  
Deposition Parameters ◽  
Higher Temperature ◽  
Sputtering Pressure ◽  
Sem Morphology

Ba0.65Sr0.35TiO3 (BST) thin films on p-silicon substrates were deposited by radio frequency magnetron sputtering. The effects of the deposition parameters on the crystallization and microstructure of BST thin films were investigated by X-ray diffraction and filed emission electron microscopy, respectively. The crystallization behavior of these films was apparently affected by the substrate temperature, annealing temperature and sputtering pressure. The improved crystallization can be observed for BST thin films that deposited at higher temperature. The dominant X-ray diffraction peaks became sharper and more intense as the annealing temperature increased. BST thin films deposited at high sputtering pressure of 3.9 Pa exhibited the (110) + (200) preferred orientation. Possible correlations of the crystallization with the sputtering pressure were discussed. The SEM morphology indicated the film was small grains and smooth.

STRUCTURE AND PHOTOLUMINESCENCE PROPERTIES OF SILICON OXYCARBIDE THIN FILMS DEPOSITED BY THE RF REACTIVE SPUTTERING

2011 ◽  
Vol 25 (22) ◽  
pp. 2983-2990 ◽  
Author(s):  
YINQIAO PENG ◽  
JICHENG ZHOU ◽  
XUQIANG ZHENG ◽  
BAOXING ZHAO ◽  
XIAOCHAO TAN
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Reactive Sputtering ◽  
Silicon Oxycarbide ◽  
Silicon Substrates ◽  
Photoluminescence Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Deposited Films ◽  
Sintered Silicon

Silicon oxycarbide ( SiCO ) thin films were prepared by the RF reactive sputtering technique on n-type silicon substrates with the target of sintered silicon carbide ( SiC ), and high purity oxygen was used as the reactant gas. The as-deposited films were annealed at temperatures of 600°C, 800°C, and 1000°C under nitrogen ambient, respectively. The films were characterized by scanning electron microscopy, Fourier transform infrared spectroscopy, X-ray diffraction and photoluminescence (PL) spectrophotometer. The results show that annealing temperature plays an important role in the structure and photoluminescence of the films. The temperature 600°C is the most favorable annealing temperature for SiO 2 crystallization and the formation of 6H- SiC crystal phase in the SiCO films. The intense PL peaks located at 375 nm and 470 nm are observed at room temperature. The origin of the PL was discussed.

scholarly journals Influence of the growth parameters of TiO2 thin films deposited by the MOCVD method

Cerâmica ◽  
2002 ◽  
Vol 48 (305) ◽  
pp. 38-42 ◽  
Author(s):  
M. I. B. Bernardi ◽  
E. J. H. Lee ◽  
P. N. Lisboa-Filho ◽  
E. R. Leite ◽  
E. Longo ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Parameters ◽  
Structural Characteristics ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Tio2 Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Deposition Parameters

The synthesis of TiO2 thin films was carried out by the Organometallic Chemical Vapor Deposition (MOCVD) method. The influence of deposition parameters used during growth on the final structural characteristics was studied. A combination of the following experimental parameters was studied: temperature of the organometallic bath, deposition time, and temperature and substrate type. The high influence of those parameters on the final thin film microstructure was analyzed by scanning electron microscopy with electron dispersive X-ray spectroscopy, atomic force microscopy and X-ray diffraction.

scholarly journals A Study on the Characteristics of Cu–Mn–Dy Alloy Resistive Thin Films

Coatings ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 118 ◽  
Author(s):  
Ho-Yun Lee ◽  
Chi-Wei He ◽  
Ying-Chieh Lee ◽  
Da-Chuan Wu
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Annealing Temperature ◽  
Phase Evolution ◽  
Amorphous Structure ◽  
X Ray Diffraction ◽  
Temperature Coefficient Of Resistance ◽  
X Ray ◽  
Transmission Electronmicroscopy ◽  
Scanning Electron

Cu–Mn–Dy resistive thin films were prepared on glass and Al2O3 substrates, which wasachieved by co-sputtering the Cu–Mn alloy and dysprosium targets. The effects of the addition ofdysprosium on the electrical properties and microstructures of annealed Cu–Mn alloy films wereinvestigated. The composition, microstructural and phase evolution of Cu–Mn–Dy films werecharacterized using field emission scanning electron microscopy, transmission electronmicroscopy and X-ray diffraction. All Cu–Mn–Dy films showed an amorphous structure when theannealing temperature was set at 300 °C. After the annealing temperature was increased to 350 °C,the MnO and Cu phases had a significant presence in the Cu–Mn films. However, no MnO phaseswere observed in Cu–Mn–Dy films at 350 °C. Even Cu–Mn–Dy films annealed at 450 °C showedno MnO phases. This is because Dy addition can suppress MnO formation. Cu–Mn alloy filmswith 40% dysprosium addition that were annealed at 300 °C exhibited a higher resistivity of ∼2100 μΩ·cm with a temperature coefficient of resistance of –85 ppm/°C.

scholarly journals Влияние Cr и Ni на формирование фаз в механосинтезированном нанокомпозите на основе Fe-=SUB=-75-=/SUB=-C-=SUB=-25-=/SUB=-

2020 ◽  
Vol 90 (5) ◽  
pp. 787
Author(s):  
А.А. Чулкина ◽  
А.И. Ульянов ◽  
В.А. Волков ◽  
А.Л. Ульянов ◽  
А.В. Загайнов
Keyword(s):  
Curie Temperature ◽  
Amorphous Phase ◽  
Annealing Temperature ◽  
Magnetic Measurements ◽  
Nickel Content ◽  
X Ray Diffraction ◽  
Mechanical Synthesis ◽  
X Ray ◽  
Higher Temperature ◽  
Two Phases

X-ray diffraction, Mossbauer spectroscopy, and magnetic measurements have been used to study the phase formation and doping during mechanical synthesis (MS) and subsequent annealing of the alloy (Fe0.80Cr0.05Ni0.15)75C25. It has been shown that, after MS, the nanocomposite contains mainly two phases – an amorphous phase and cementite A. During annealing, as a result of crystallization of the amorphous phase, cementite B is formed, in which contains more nickel than in the mechanically synthesized cementite A. As the annealing temperature increases, austenite, which is inhomogeneous in nickel content, is formed. The Curie temperature of this austenite reaches 500 °C. It has been determined that cementite in the mechanosynthesized nanocomposite (Fe,Cr,Ni)75C25 has a higher temperature stabilitythan that in a MS composite (Fe,Ni)75C25.

Microstructure and Mechanical Properties of Chromium Carbide Coatings Deposited by Magnetron Sputtering Technique

2019 ◽  
Vol 397 ◽  
pp. 118-124
Author(s):  
Linda Aissani ◽  
Khaoula Rahmouni ◽  
Laala Guelani ◽  
Mourad Zaabat ◽  
Akram Alhussein
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Magnetron Sputtering ◽  
Structural Properties ◽  
Annealing Temperature ◽  
Diffusion Mechanism ◽  
X Ray Diffraction ◽  
Chromium Carbides ◽  
X Ray ◽  
Mechanical And Structural Properties

From the hard and anti-corrosions coatings, we found the chromium carbides, these components were discovered by large studies; like thin films since years ago. They were pointed a good quality for the protection of steel, because of their thermal and mechanical properties for this reason, it was used in many fields for protection. Plus: their hardness and their important function in mechanical coatings. The aim of this work joins a study of the effect of the thermal treatment on mechanical and structural properties of the Cr/steel system. Thin films were deposited by cathodic magnetron sputtering on the steel substrates of 100C6, contain 1% wt of carbon. Samples were annealing in vacuum temperature interval between 700 to 1000 °C since 45 min, it forms the chromium carbides. Then pieces are characterising by X-ray diffraction, X-ray microanalysis and scanning electron microscopy. Mechanical properties are analysing by Vickers test. The X-ray diffraction analyse point the formation of the Cr7C3, Cr23C6 carbides at 900°C; they transformed to ternary carbides in a highest temperature, but the Cr3C2 doesn’t appear. The X-ray microanalysis shows the diffusion mechanism between the chromium film and the steel sample; from the variation of: Cr, Fe, C, O elements concentration with the change of annealing temperature. The variation of annealing temperature shows a clean improvement in mechanical and structural properties, like the adhesion and the micro-hardness.

Electrical Properties of Multilayer Synthesized CuInSi Thin Film

2011 ◽  
Vol 383-390 ◽  
pp. 822-825
Author(s):  
Ping Luan ◽  
Jian Sheng Xie ◽  
Jin Hua Li
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Thin Films ◽  
Electrical Properties ◽  
Annealing Temperature ◽  
Time Effect ◽  
X Ray Diffraction ◽  
Testing Instrument ◽  
X Ray ◽  
Conductivity Type

Using magnetron sputtering technology, the CuInSi thin films were prepared by multilayer synthesized method. The structure of CuInSi films were detected by X-ray diffraction(XRD), the main crystal phase peak is at 2θ=42.458°; The resistivity of films were measured by SDY-4 four-probe meter; The conductive type of the films were tested by DLY-2 conductivity type testing instrument. The results show that the annealing temperature and time effect on the crystal resistivity and crystal structure greatly.

Influence of deposition parameters on the residual stresses of WC-Wo sputtered thin films

MRS Advances ◽  
2020 ◽  
Vol 5 (23-24) ◽  
pp. 1215-1223
Author(s):  
R.R. Phiri ◽  
O.P. Oladijo ◽  
E.T. Akinlabi
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Residual Stresses ◽  
Substrate Surface ◽  
Tribological Performance ◽  
X Ray Diffraction ◽  
X Ray ◽  
Compressive Stresses ◽  
Deposition Parameters ◽  
Cobalt Thin Films

AbstractControl and manipulation of residual stresses in thin films is a key for attaining coatings with high mechanical and tribological performance. It is therefore imperative to have reliable residual stress measurements methods to further understand the dynamics involved. The sin2ψ method of X-ray diffraction was used to investigate the residual stresses on the tungsten carbide cobalt thin films deposited on a mild steel surface to understand the how the deposition parameters influence the generation of residual stresses within the substrate surface. X-ray spectra of the surface revealed an amorphous phase of the thin film therefore the stress measured was of the substrate surface and the effects of sputtering parameters on residual stress were analysed. Compressive stresses were identified within all samples studied. The results reveal that as the sputtering parameters are varied, the residual stresses also change. Optimum deposition parameters in terms of residual stresses were suggested.

scholarly journals Properties of Nanostructure Bismuth Telluride Thin Films Using Thermal Evaporation

2017 ◽  
Vol 2017 ◽  
pp. 1-4 ◽  
Author(s):  
Swati Arora ◽  
Vivek Jaimini ◽  
Subodh Srivastava ◽  
Y. K. Vijay
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Bismuth Telluride ◽  
Room Temperature ◽  
Thermal Evaporation ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Scanning Electron

Bismuth telluride has high thermoelectric performance at room temperature; in present work, various nanostructure thin films of bismuth telluride were fabricated on silicon substrates at room temperature using thermal evaporation method. Tellurium (Te) and bismuth (Bi) were deposited on silicon substrate in different ratio of thickness. These films were annealed at 50°C and 100°C. After heat treatment, the thin films attained the semiconductor nature. Samples were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM) to show granular growth.

Dielectric Properties of Sol-Gel Derived MgAl2O4 Thin Films

2012 ◽  
Vol 151 ◽  
pp. 314-318
Author(s):  
Ching Fang Tseng ◽  
Cheng Hsing Hsu ◽  
Chun Hung Lai
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Dissipation Factor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Preheating Temperature ◽  
Surface Morphologies

This paper describes microstructure characteristics of MgAl2O4 thin films were deposited by sol-gel method with various preheating temperatures and annealing temperatures. Particular attention will be paid to the effects of a thermal treatment in air ambient on the physical properties. The annealed films were characterized using X-ray diffraction. The surface morphologies of treatment film were examined by scanning electron microscopy and atomic force microscopy. At a preheating temperature of 300oC and an annealing temperature of 700oC, the MgAl2O4 films with 9 μm thickness possess a dielectric constant of 9 at 1 kHz and a dissipation factor of 0.18 at 1 kHz.

SiO2ZrO2 Thin Films as Low Temperature NO2 and O3 Sensors

2015 ◽  
Vol 1088 ◽  
pp. 81-85 ◽  
Author(s):  
T.N. Myasoedova ◽  
Victor V. Petrov ◽  
Nina K. Plugotarenko ◽  
Dmitriy V. Sergeenko ◽  
Galina Yalovega ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Low Temperature ◽  
Annealing Temperature ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
X Ray ◽  
Operating Temperatures ◽  
Scanning Electron

Thin SiO2ZrO2films were prepared, up to 0.2 μm thick, by means of the sol–gel technology and characterized by a Scanning electron microscopy and X-ray diffraction. It is shown the presence of monoclinic, cubic and tetragonal phases of ZrO2in the SiO2matrix. The crystallites sizes depend on the annealing temperature of the film and amount to 35 and 56 nm for the films annealed at 773 and 973 K, respectively. The films resistance is rather sensitive to the presence of NO2and O3impurity in air at lower operating temperatures in the range of 30-60°C.

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