Transparent Thin Film Transistors Based on InZnO for Flexible Electronics

There is strong interest in new forms of transparent, flexible or wearable electronics using non-Si materials deposited at low temperature on cheap substrates. While Si-based thin film transistors (TFTs) are widely used in displays, there are some drawbacks such as light sensitivity and light degradation and low field effect mobility (<1 cm2/Vs). For example, virtually all liquid crystal displays (LCDs) use TFTs imbedded in the panel itself. One of the promising alternatives to use of Si TFTs involves amorphous or nanocrystalline n-type oxide semiconductors. For example, there have been promising results with zinc oxide, indium gallium oxide and zinc tin oxide channels. In this paper, recent progress in these new materials for TFTs is reviewed. It is expected that GaInZnO transistor arrays will be used for driving laminar electroluminescent, organic lightemitting diode (OLED) and LCD displays. These transistors may potentially operate at up to an order of magnitude faster than Si FTFs.

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Flexible Electronics Based on InGaZnO Transparent Thin Film Transistors

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.521.141 ◽

2012 ◽

Vol 521 ◽

pp. 141-151

Author(s):

Stephen J. Pearton ◽

Wan Tae Lim ◽

Erica Douglas ◽

Hyun Cho ◽

F. Ren

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Flexible Electronics ◽

Thin Film Transistors ◽

Light Emitting Diode ◽

Light Sensitivity ◽

Processing Temperature ◽

Wearable Electronics ◽

Glass Substrates ◽

Indium Gallium

There is increasing interest in use of conducting oxide materials in new forms of transparent, flexible or wearable electronics on cheap substrates, including paper. While Si-based thin film transistors (TFTs) are widely used in displays, there are some drawbacks such as light sensitivity and light degradation and low field effect mobility (<1 cm2/Vs). For example, virtually all liquid crystal displays (LCDs) use TFTs imbedded in the panel itself. One of the promising alternatives to use of Si TFTs involves amorphous or nanocrystalline n-type oxide semiconductors. There have been promising results with zinc oxide, indium gallium oxide and zinc tin oxide channels. In this paper, recent progress in these new materials for TFTs on substrates such as paper is reviewed. In addition, InGaZnO transistor arrays show promise for driving laminar electroluminescent, organic light-emitting diode (OLED) and LCD displays. These transistors may potentially operate at up to an order of magnitude faster than Si TFTs. We have fabricated bottomgate amorphous (α-) indium-gallium-zinc-oxide (InGaZnO4) thin film transistors (TFTs) on both paper and glass substrates at low processing temperature (≤100°C). As a water and solvent barrier layer, cyclotene (BCB 3022-35 from Dow Chemical) was spin-coated on the entire paper substrate. TFTs on the paper substrates exhibited saturation mobility (μsat) of 1.2 cm2.V-1.s-1, threshold voltage (VTH) of 1.9V, subthreshold gate-voltage swing (S) of 0.65V.decade-1, and drain current onto- off ratio (ION/IOFFSubscript text) of ~104. These values were only slightly inferior to those obtained from devices on glass substrates (μsat~2.1 cm2.V-1.s-1, VTH ~0 V, S~0.74 V.decade-1, and ION/IOFF=105- 106). The uneven surface of the paper sheet led to relatively poor contact resistance between source-drain electrodes and channel layer. Future areas for development are identified.

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A Sustainable Approach to Flexible Electronics with Zinc-Tin Oxide Thin-Film Transistors

Advanced Electronic Materials ◽

10.1002/aelm.201800032 ◽

2018 ◽

Vol 4 (7) ◽

pp. 1800032 ◽

Cited By ~ 37

Author(s):

Cristina Fernandes ◽

Ana Santa ◽

Ângelo Santos ◽

Pydi Bahubalindruni ◽

Jonas Deuermeier ◽

...

Keyword(s):

Thin Film ◽

Tin Oxide ◽

Flexible Electronics ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Zinc Tin Oxide

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A Study of Solution-Processed Zinc–Tin-Oxide Semiconductors for Thin-Film Transistors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2019.2910347 ◽

2019 ◽

Vol 66 (6) ◽

pp. 2631-2636 ◽

Cited By ~ 3

Author(s):

Chih-Chieh Hsu ◽

Cheng-Han Chou ◽

Yu-Ting Chen ◽

Wun-Ciang Jhang

Keyword(s):

Thin Film ◽

Tin Oxide ◽

Thin Film Transistors ◽

Solution Processed ◽

Oxide Semiconductors ◽

Zinc Tin Oxide

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Metal-induced crystallization of amorphous zinc tin oxide semiconductors for high mobility thin-film transistors

Applied Physics Letters ◽

10.1063/1.4947063 ◽

2016 ◽

Vol 108 (15) ◽

pp. 152111 ◽

Cited By ~ 6

Author(s):

Ah Young Hwang ◽

Sang Tae Kim ◽

Hyuk Ji ◽

Yeonwoo Shin ◽

Jae Kyeong Jeong

Keyword(s):

Thin Film ◽

Tin Oxide ◽

Thin Film Transistors ◽

High Mobility ◽

Oxide Semiconductors ◽

Metal Induced Crystallization ◽

Zinc Tin Oxide ◽

Induced Crystallization

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Independent chemical/physical role of combustive exothermic heat in solution-processed metal oxide semiconductors for thin-film transistors

Journal of Materials Chemistry C ◽

10.1039/c4tc02408g ◽

2015 ◽

Vol 3 (7) ◽

pp. 1457-1462 ◽

Cited By ~ 18

Author(s):

Seong Jip Kim ◽

Ae Ran Song ◽

Sun Sook Lee ◽

Sahn Nahm ◽

Youngmin Choi ◽

...

Keyword(s):

Thin Film ◽

Tin Oxide ◽

Thin Film Transistors ◽

Structural Evolution ◽

Device Performance ◽

Oxide Semiconductors ◽

Independent Contribution ◽

Physical Role ◽

Zinc Tin Oxide

Based on newly-designed, solution-processable zinc tin oxide semiconductors, the independent contribution of combustive exothermic heat was investigated on chemical/physical structural evolution through spectroscopy analyses along with the interpretation on device performance.

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Integration Process for Self-aligned Sub-µm Thin-Film Transistors for Flexible Electronics

2021 IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS) ◽

10.1109/fleps51544.2021.9469764 ◽

2021 ◽

Author(s):

Julia Reker ◽

Thorsten Meyers ◽

Fabio F. Vidor ◽

Trudi-Heleen Joubert ◽

Ulrich Hilleringmann

Keyword(s):

Thin Film ◽

Flexible Electronics ◽

Thin Film Transistors ◽

Integration Process

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A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application

Nanomaterials ◽

10.3390/nano11051188 ◽

2021 ◽

Vol 11 (5) ◽

pp. 1188

Author(s):

Ivan Rodrigo Kaufmann ◽

Onur Zerey ◽

Thorsten Meyers ◽

Julia Reker ◽

Fábio Vidor ◽

...

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Schottky Barrier ◽

Barrier Height ◽

Flexible Electronics ◽

Thin Film Transistors ◽

Zinc Oxide Nanoparticles ◽

Schottky Barrier Height ◽

Oxide Nanoparticles ◽

Semiconductor Interfaces

Zinc oxide nanoparticles (ZnO NP) used for the channel region in inverted coplanar setup in Thin Film Transistors (TFT) were the focus of this study. The regions between the source electrode and the ZnO NP and the drain electrode were under investigation as they produce a Schottky barrier in metal-semiconductor interfaces. A more general Thermionic emission theory must be evaluated: one that considers both metal/semiconductor interfaces (MSM structures). Aluminum, gold, and nickel were used as metallization layers for source and drain electrodes. An organic-inorganic nanocomposite was used as a gate dielectric. The TFTs transfer and output characteristics curves were extracted, and a numerical computational program was used for fitting the data; hence information about Schottky Barrier Height (SBH) and ideality factors for each TFT could be estimated. The nickel metallization appears with the lowest SBH among the metals investigated. For this metal and for higher drain-to-source voltages, the SBH tended to converge to some value around 0.3 eV. The developed fitting method showed good fitting accuracy even when the metallization produced different SBH in each metal-semiconductor interface, as was the case for gold metallization. The Schottky effect is also present and was studied when the drain-to-source voltages and/or the gate voltage were increased.

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Review of metal oxide semiconductors-based thin-film transistors for point-of-care sensor applications

Journal of Information Display ◽

10.1080/15980316.2020.1714762 ◽

2020 ◽

Vol 21 (4) ◽

pp. 203-210 ◽

Cited By ~ 3

Author(s):

You Seung Rim

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Thin Film Transistors ◽

Point Of Care ◽

Metal Oxide Semiconductors ◽

Oxide Semiconductors ◽

Sensor Applications

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Hot-Wire Deposited Amorphous Silicon Thin-Film Transistors

MRS Proceedings ◽

10.1557/proc-424-31 ◽

1996 ◽

Vol 424 ◽

Cited By ~ 1

Author(s):

R. E. I. Schropp ◽

K. F. Feenstra ◽

C. H. M. Van Der Werf ◽

J. Holleman ◽

H. Meiling

Keyword(s):

Thin Film ◽

Amorphous Silicon ◽

Thin Film Transistors ◽

Gate Dielectric ◽

Chemical Vapor ◽

Current Crowding ◽

Hot Wire ◽

Saturation Regime ◽

Silicon Thin Film ◽

Order Of Magnitude

AbstractWe present the first thin film transistors (TFTs) incorporating a low hydrogen content (5 - 9 at.-%) amorphous silicon (a-Si:H) layer deposited by the Hot-Wire Chemical Vapor Deposition (HWCVD) technique. This demonstrates the possibility of utilizing this material in devices. The deposition rate by Hot-Wire CVD is an order of magnitude higher than by Plasma Enhanced CVD. The switching ratio for TFTs based on HWCVD a-Si:H is better than 5 orders of magnitude. The field-effect mobility as determined from the saturation regime of the transfer characteristics is still quite poor. The interface with the gate dielectric needs further optimization. Current crowding effects, however, could be completely eliminated by a H2 plasma treatment of the HW-deposited intrinsic layer. In contrast to the PECVD reference device, the HWCVD device appears to be almost unsensitive to bias voltage stressing. This shows that HW-deposited material might be an approach to much more stable devices.

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