Homoepitaxial Growth on 4H-SiC (03-38) Face by Sublimation Close Space Technique

2005 ◽  
Vol 483-485 ◽  
pp. 129-132 ◽  
Author(s):  
S. Yoneda ◽  
Tomoaki Furusho ◽  
H. Takagi ◽  
S. Ohta ◽  
Shigehiro Nishino
Keyword(s):  
Epitaxial Growth ◽  
Oxidation Rate ◽  
Growth Conditions ◽  
Optimum Growth ◽  
Specular Surface ◽  
Homoepitaxial Growth ◽  
Space Technique ◽  
Sublimation Method ◽  
The Difference ◽  
Optimum Growth Condition

For preliminary step toward fabrication of MOSFET using 4H-SiC 8) 3 (03 prepared by sublimation method, epitaxial growth of device quality 4H-SiC on 4H-SiC (0001) 8.0° off substrate was carried out and investigated. Smooth and specular surface of 4H-SiC (0001) plane was obtained by optimum growth condition. And epitaxial growth on 4H-SiC 8) 3 (03 and ) 8 3 (03 substrates were carried out with optimum growth conditions of 4H-SiC (0001). Smooth and specular surface was obtained on 4H-SiC 8) 3 (03 and ) 8 3 (03 plane. Growth rate of epilayers of 4H-SiC (0001), 8) 3 (03 and ) 8 3 (03 face were same. Oxidation rate of 4H-SiC (0001), ) 1 (000 , 8) 3 (03 and ) 8 3 (03 face was investigated. The oxidation rate was different depending on the faces. It was observed that the difference of oxidation rate of 8) 3 (03 and ) 8 3 (03 is mainly due to the difference of polarity similar to the case of reported for (0001) and ) 1 (000 .

Control of the Surface Morphology on Low Off Angled 4H-SiC Homoepitaxal Growth

2009 ◽  
Vol 615-617 ◽  
pp. 113-116 ◽  
Author(s):  
Kazutoshi Kojima ◽  
Hajime Okumura ◽  
Kazuo Arai
Keyword(s):  
Surface Morphology ◽  
Epitaxial Growth ◽  
Epitaxial Layer ◽  
Flow Rate ◽  
Growth Conditions ◽  
Layer Surface ◽  
Specular Surface ◽  
Homoepitaxial Growth ◽  
Angle Difference ◽  
The Face

We have carried out detailed investigations on the influence of the growth conditions and the wafer off angle on the surface morphology of low off angle homoepitaxial growth. We found triangular features to be also serious problems on a 4 degree off 4H-SiC Si-face epitaxial layer surface. The control of the C/Si ratio by controlling the SiH4 flow rate is effective in suppressing the triangular features on 4 degree off Si-face homoepitaxial layer. As regards epitaxial growth on a vicinal off-axis substrate, the small off angle difference of a tenth part of a degree has an influence on the surface morphology of the epitaxial layer. This tendency depends on the face polarity and a C-face can be obtained that has a specular surface with a lower vicinal off angle than a Si-face. By controlling this off angle, a specular surface morphology without a bunched step structure could be obtained on a vicinal off angle 4H-SiC Si-face.

4H-SiC Homoepitaxial Growth on Vicinal-Off Angled Si-Face Substrate

2010 ◽  
Vol 645-648 ◽  
pp. 99-102 ◽  
Author(s):  
Kazutoshi Kojima ◽  
Sachiko Ito ◽  
Junji Senzaki ◽  
Hajime Okumura
Keyword(s):  
Surface Morphology ◽  
Epitaxial Growth ◽  
Growth Temperature ◽  
Growth Conditions ◽  
Step Bunching ◽  
Homoepitaxial Growth ◽  
Blocking Voltage ◽  
Basal Plane Dislocation ◽  
Epilayer Surface

We have carried out detailed investigations of 4H-SiC homoepitaxial growth on vicinal off-angled Si-face substrates. We found that the surface morphology of the substrate just after in-situ H2 etching was also affected by the value of the vicinal-off angle. Growth conditions consisting of a low C/Si ratio and a low growth temperature were effective in suppressing macro step bunching at the grown epilayer surface. We also demonstrated epitaxial growth without step bunching on a 2-inch 4H-SiC Si-face substrate with a vicinal off angle of 0.79o. Ni Schottky barrier diodes fabricated on an as-grown epilayer had a blocking voltage above 1000V and a leakage current of less than 5x10-7A/cm2. We also investigated the propagation of basal plane dislocation from the vicinal off angled substrate into the epitaxial layer.

Low Temperature Homoepitaxial Growth of 4H-SiC on 4° Off-Axis Carbon-Face Substrate Using BTMSM Source

2013 ◽  
Vol 740-742 ◽  
pp. 247-250 ◽  
Author(s):  
Hun Hee Lee ◽  
Han Seok Seo ◽  
Do Hyun Lee ◽  
Chang Hyun Kim ◽  
Hyun Woo Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Epitaxial Films ◽  
Cold Wall ◽  
Homoepitaxial Growth

Homoepitaxial 4H-SiC thin films were grown on (0 0 0 -1) C-face substrate by cold-wall chemical vapor deposition (CVD) using bis-trimethylsilylmethane (BTMSM, C7H20Si2) precursor. Because of the polarity difference of C-face and (0 0 0 1) Si-face, epitaxial growth conditions of C-face was quite different from those of Si-face. To improve the quality of C-face epitaxial films, effects of epitaxial growth conditions on surface morphology and crystallinity of epitaxial films were investigated.

Growth of Thick 4H-SiC Epitaxial Layers on On-Axis Si-Face Substrates with HCl Addition

2009 ◽  
Vol 615-617 ◽  
pp. 93-96 ◽  
Author(s):  
Stefano Leone ◽  
Henrik Pedersen ◽  
Anne Henry ◽  
Shailaja P. Rao ◽  
Olof Kordina ◽  
...  
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Process Parameters ◽  
Doping Concentration ◽  
Growth Conditions ◽  
Main Process ◽  
Growth Mechanisms ◽  
Homoepitaxial Growth ◽  
Background Doping ◽  
Homoepitaxial Layers

Homoepitaxial growth of 4H-SiC on on-axis Si-face substrates is reported using hydrogen chloride together with silane and ethylene. In this study, the main process parameters, such as temperature, Cl/Si ratio, C/Si ratio, Si/H2 ratio and ramp up conditions, were studied in detail to understand their effects on the growth mechanisms. Two different optimal epitaxial growth conditions were found. Silicon rich conditions and a high Cl/Si ratio were the key parameters to grow thick homoepitaxial layers with a very low background doping concentration and a growth rate higher than 20 μm/h.

Epitaxial Growth Of High Quality Sic By Sublimation Close Space Technique

1997 ◽  
Vol 483 ◽  
Author(s):  
S. Nishino ◽  
T. Yoshida ◽  
Y. Nishio
Keyword(s):  
Growth Rate ◽  
Raman Spectroscopy ◽  
Substrate Temperature ◽  
Epitaxial Growth ◽  
Source Material ◽  
Growth Time ◽  
Power Devices ◽  
High Quality ◽  
Specular Surface ◽  
Space Technique

AbstractSemiconducting SiC is expected for power devices and higher breakdown voltage of the device is required. Growth rate of epilayer by conventional CVD is about 3 μ m/h. To make a thick epilayer, more than 10 hours are needed. To minimize the growth time, we propose sublimation epitaxial method by close space technique (CST). In the CST, source ( polycrystalline 3C–SiC plate) and substrate is closely separated by spacer and source material is sublimed and transferred to the substrate in argon. Epitaxial layers with specular surface were obtained on 6H–SiC substrates at a substrate temperature around 2200 °C and growth rate was about 100 μ/h. Nitrogen-bound exciton was observed by PL measurement at 2 K in the epilayer when 3C–SiC plate with high purity was employed as the source material. Crystallinity of the epilayer was characterized by Raman spectroscopy.

Characterization and Control of Erwinia spp. and Pluralibacter sp. in Tuna Salad Preparations

2019 ◽  
Vol 82 (6) ◽  
pp. 1071-1081
Author(s):  
KRISTIN BJORNSDOTTIR-BUTLER ◽  
SUSAN McCARTHY ◽  
RONALD A. BENNER
Keyword(s):  
Growth Conditions ◽  
Whole Genome ◽  
Processing Conditions ◽  
Optimum Growth ◽  
Significant Growth ◽  
Ph Values ◽  
Histamine Production ◽  
Different Temperatures ◽  
And Control ◽  
Erwinia Persicina

ABSTRACT Histamine-producing Erwinia and Pluralibacter spp. capable of producing toxic histamine levels were isolated from ingredients commonly used in tuna salad preparations. The characterization and control of these histamine-producing bacteria are necessary to prevent illness from tuna salad consumption. We confirmed the identity of two Erwinia spp. and one Pluralibacter sp. previously isolated from tuna salad ingredients through whole genome sequencing and phylogenic analysis and characterized them for growth and histamine production at different temperatures, pH values, and salt concentrations. In addition, we examined the effects of dried vinegar (DV) powder on growth and histamine production of these strains in inoculated tuna salad preparations. Optimum growth temperatures in tryptic soy broth (TSB) for the two Erwinia spp. and one Pluralibacter sp. were 30.1, 31.1, and 33.9°C, respectively, and growth in TSB was observed at 5°C for both genera. Optimum histamine production of Erwinia persicina, Erwinia spp., and Pluralibacter spp. in TSB with histidine occurred from 25 to 30°C, pH 4 to 6, and 0 to 4% NaCl. No significant growth or histamine production was observed in tuna salad preparations stored at 4°C. Growth and histamine production by Erwinia or Pluralibacter spp. was inhibited in tuna salad containing celery and onion and 2% DV, whereas significant growth and histamine production occurred in tuna salad without DV. Understanding optimum growth conditions and histamine production can provide guidance to tuna salad manufacturers in formulating products and adjusting processing conditions that minimize hazards from these histamine-producing bacteria. Addition of 2% DV to tuna salad preparations may prevent histamine production in the event of temperature abuse. HIGHLIGHTS

SiC Epitaxial Layers Grown by Sublimation Method and their Electrical Properties

2007 ◽  
Vol 556-557 ◽  
pp. 153-156
Author(s):  
Chi Kwon Park ◽  
Gi Sub Lee ◽  
Ju Young Lee ◽  
Myung Ok Kyun ◽  
Won Jae Lee ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Epitaxial Layer ◽  
Light Emission ◽  
Epitaxial Layers ◽  
Current Voltage ◽  
Space Technique ◽  
Sublimation Method ◽  
Device Applications ◽  
P Type ◽  
Surface Morphologies

A sublimation epitaxial method, referred to as the Closed Space Technique (CST) was adopted to produce thick SiC epitaxial layers for power device applications. In this study, we aimed to systematically investigate surface morphologies and electrical properties of SiC epitaxial layers grown with varying a SiC/Al ratio in a SiC source powder during the sublimation growth using the CST method. It was confirmed that the acceptor concentration of epitaxial layer was continuously decreased with increasing the SiC/Al ratio. The blue light emission was successfully observed on a PN diode structure fabricated with the p-type SiC epitaxial layer. Furthermore, 4H-SiC MESFETs having a micron-gate length were fabricated using a lithography process and their current-voltage performances were characterized.

Optimum Growth Conditions of Ge–Sb–Te Alloy Thin Film Investigated by Ellipsometry

2004 ◽  
Vol 43 (3) ◽  
pp. 1006-1012 ◽  
Author(s):  
Sung Hyuck An ◽  
Xuezhe Li ◽  
Sang Youl Kim
Keyword(s):  
Thin Film ◽  
Growth Conditions ◽  
Alloy Thin Film ◽  
Optimum Growth

Epitaxial Growth and Characterization of 4H-SiC(11–20) and (03–38)

2002 ◽  
Vol 742 ◽  
Author(s):  
T. Kimoto ◽  
K. Hashimoto ◽  
K. Fujihira ◽  
K. Danno ◽  
S. Nakamura ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Schottky Barrier ◽  
Breakdown Voltage ◽  
Doping Concentration ◽  
Schottky Barrier Diodes ◽  
Homoepitaxial Growth ◽  
Nitrogen Incorporation ◽  
Impurity Doping ◽  
Background Doping

ABSTRACTHomoepitaxial growth, impurity doping, and diode fabrication on 4H-SiC(11–20) and (03–38) have been investigated. Although the efficiency of nitrogen incorporation is higher on the non-standard faces than on (0001), a low background doping concentration of 2∼3×1014 cm-3 can be achieved. On these faces, boron and aluminum are less effectively incorporated, compared to the growth on off-axis (0001). 4H-SiC(11–20) epilayers are micropipe-free, as expected. More interestingly, almost perfect micropipe closing has been realized in 4H-SiC (03–38) epitaxial growth. Ni/4H-SiC(11–20) and (03–38) Schottky barrier diodes showed promising characteritics of 3.36 kV-24 mΩcm2 and 3.28 kV–22 mΩcm2, respectively. The breakdown voltage of 4H-SiC(03–38) Schottky barrier diodes was significantly improved from 1 kV to above 2.5 kV by micropipe closing.

Sign in / Sign up

Export Citation Format

Share Document