Design and fabrication of a power Si/SiC LDMOSFET for high temperature applications

2017 ◽  
Vol 2017 (HiTEN) ◽  
pp. 000219-000222
Author(s):  
F. Li ◽  
P.M. Gammon ◽  
C.W. Chan ◽  
F. Gity ◽  
T. Trajkovic ◽  
...  
Keyword(s):  
High Temperature ◽  
High Voltage ◽  
Field Effect ◽  
Room Temperature ◽  
Harsh Environment ◽  
Avalanche Breakdown ◽  
Temperature Peak ◽  
Channel Mobility ◽  
First Time ◽  
Peak Field

Abstract Power Si/SiC LDMOSFET are being developed for the benefits of high temperature space and terrestrial harsh-environment applications. For the first time, high voltage devices are fabricated on a direct bonded Si/SiC substrate and characterised at room temperature. Peak field-effect channel mobility of the fabricated MOSFET reached ≈300 cm2/V.s and the avalanche breakdown was not observed up to 200 V, despite of a high leakage current in the device off-mode.

9 kV 4H-SiC IGBTs with 88 mΩ·cm2 of R diff, on

2007 ◽  
Vol 556-557 ◽  
pp. 771-774 ◽  
Author(s):  
Qing Chun Jon Zhang ◽  
Charlotte Jonas ◽  
Bradley Heath ◽  
Mrinal K. Das ◽  
Sei Hyung Ryu ◽  
...  
Keyword(s):  
High Temperature ◽  
Threshold Voltage ◽  
High Power ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Gate Bias ◽  
Channel Mobility ◽  
Fast Switching ◽  
Blocking Voltage ◽  
First Time

SiC IGBTs are suitable for high power, high temperature applications. For the first time, the design and fabrication of 9 kV planar p-IGBTs on 4H-SiC are reported in this paper. A differential on-resistance of ~ 88 m(cm2 at a gate bias of –20 V is achieved at 25°C, and decreases to ~24.8 m(cm2 at 200°C. The device exhibits a blocking voltage of 9 kV with a leakage current density of 0.1 mA/cm2. The hole channel mobility is 6.5 cm2/V-s at room temperature with a threshold voltage of –6.5 V resulting in enhanced conduction capability. Inductive switching tests have shown that IGBTs feature fast switching capability at both room and elevated temperatures.

Search for High Damping Metallic Glasses

2006 ◽  
Vol 319 ◽  
pp. 151-156 ◽  
Author(s):  
Y. Hiki ◽  
M. Tanahashi ◽  
Shin Takeuchi
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Internal Friction ◽  
Metallic Glass ◽  
Room Temperature ◽  
Temperature Stability ◽  
Temperature Peak ◽  
High Temperature Side ◽  
Side Slope ◽  
Temperature Side

In a hydrogen-doped metallic glass, there appear low-temperature and high-temperature internal friction peaks respectively associated with a point-defect relaxation and the crystallization. The high-temperature-side slope of low-temperature peak and also the low-temperature-side slope of high-temperature peak enhance the background internal friction near the room temperature. A hydrogen-doped Mg-base metallic glass was proposed as a high-damping material to be used near and somewhat above the room temperature. Stability of the high damping was also checked.

Thin PSG Process for 4H-SiC MOSFET

2014 ◽  
Vol 778-780 ◽  
pp. 513-516 ◽  
Author(s):  
Yogesh K. Sharma ◽  
Ayayi C. Ahyi ◽  
Tamara Isaacs-Smith ◽  
Aaron Modic ◽  
Yi Xu ◽  
...  
Keyword(s):  
Nitric Oxide ◽  
High Temperature ◽  
Field Effect ◽  
Polar Material ◽  
Channel Mobility ◽  
High Temperature Anneal ◽  
Phosphosilicate Glass ◽  
Diffusion Source ◽  
The Stability ◽  
Passivating Agent

The use of phosphorous as a passivating agent for the SiO2/4H-SiC interface increases the field effect channel mobility of 4H-SiC MOSFET to twice the value, 30-40cm2/V-s, that is obtained with a high temperature anneal in nitric oxide (NO). A solid SiP2O7planar diffusion source is used to produce P2O5for the passivation of the interface. Incorporation of phosphorous into SiO2leads to formation of phosphosilicate glass (PSG) which is known to be a polar material causes device instability. With a new modified thin phosphorous (P) passivation process, as described in this abstract, we can improve the stability of MOSFETs significantly with mobility around 75cm2/V.s.

Thermal conductivity of high temperature superconductor substrate materials: Lanthanum aluminate and neodymium aluminate

1992 ◽  
Vol 7 (9) ◽  
pp. 2492-2494 ◽  
Author(s):  
Donald T. Morelli
Keyword(s):  
Crystal Structure ◽  
Thermal Conductivity ◽  
High Temperature ◽  
Room Temperature ◽  
High Temperature Superconductor ◽  
Lanthanum Aluminate ◽  
First Time ◽  
Thermal Conductivities

The thermal conductivities of LaAlO3 and NdAlO3 have been measured for the first time between 10 and 300 K. These substrates can be classified as intermediate thermal conductors. The measured room temperature values of 9 W m−1 K−1 for LaAlO3 and 7.5 W m−1 K−1 for NdAlO3 are close to those predicted from the crystal structure of these materials, despite the fact that the crystals are twinned.

scholarly journals High Temperature Hardness of Bulk Single Crystal GaN

2000 ◽  
Vol 5 (S1) ◽  
pp. 343-348
Author(s):  
I. Yonenaga ◽  
T. Hoshi ◽  
A. Usui
Keyword(s):  
High Temperature ◽  
Single Crystal ◽  
Room Temperature ◽  
Applied Load ◽  
Elevated Temperatures ◽  
Mechanical Stability ◽  
Bulk Single Crystal ◽  
Indentation Method ◽  
First Time ◽  
High Mechanical Stability

The hardness of single crystal GaN (gallium nitride) at elevated temperature is measured for the first time and compared with other materials. A Vickers indentation method was used to determine the hardness of crack-free GaN samples under an applied load of 0.5N in the temperature range 20 - 1200°C. The hardness is 10.8 GPa at room temperature, which is comparable to that of Si. At elevated temperatures GaN shows higher hardness than Si and GaAs. A high mechanical stability for GaN at high temperature is deduced.

High-Temperature Operation of Pentacene Field-Effect Transistors with Polyimide Gate Insulators

2005 ◽  
Vol 871 ◽  
Author(s):  
Tsuyoshi Sekitani ◽  
Shingo Iba ◽  
Yusaku Kato ◽  
Yoshiaki Noguchi ◽  
Takao Someya ◽  
...  
Keyword(s):  
High Temperature ◽  
Field Effect ◽  
Room Temperature ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Current Ratio ◽  
Excellent Thermal Stability ◽  
Annealing Temperatures ◽  
High Temperature Operation ◽  
Thermal Stability Of

AbstractWe have fabricated pentacene field-effect transistors (FETs) on polyimide-sheet films with polyimide gate dielectric layers and parylene encapsulation layer, and investigated the high-temperature performance. It is found that the mobility of encapsulated FETs is enhanced from 0.5 to 0.8 cm2/Vs when the device is heated from room temperature to 160°C under light-shielding nitrogen environment. Furthermore, after the removal of annealing temperatures up to 160°C, the transistor characteristic of mobility and on/off current ratio show no significant changes, demonstration the excellent thermal stability of the present organic FETs.

Development of Low RON,Diff, 12 kV, 4H-SiC GTOs For High-Power and High-Temperature Applications

2012 ◽  
Vol 2012 (HITEC) ◽  
pp. 000149-000153 ◽  
Author(s):  
Lin Cheng ◽  
Anant K. Agarwal ◽  
Michael Oloughlin ◽  
Al Burk ◽  
Craig Capell ◽  
...  
Keyword(s):  
High Temperature ◽  
High Voltage ◽  
Room Temperature ◽  
Voltage Drop ◽  
High Injection Level ◽  
Curve Tracer ◽  
Blocking Voltage ◽  
High Temperature Measurement ◽  
Forward Voltage Drop ◽  
Set Up

In this paper, we report our recently developed 1 × 1 cm2, 12 kV SiC GTOs with a very low differential on-resistance (RON,Diff) of 4 mΩ·cm2 with respect to the device active area at high injection level current of 100 A/cm2 or higher, which is more than a 40% reduction from our previously reported work. This significant reduction in the on-resistance was attributed to an improvement of carrier lifetime in the SiC bulk region. The SiC GTO was wire-bonded and attached to a high-voltage package before the high-temperature measurement. Forward characteristics of the device were then measured using a Tektronics 371 curve tracer from room temperature up to 400°C. Over the temperature range, the RON,Diff of the 4H-SiC GTO increased modestly from 4 mΩ·cm2 at 20°C to 4.7 mΩ·cm2 at 400°C, while the forward voltage drop at 100 A decreased slightly from 3.97 V at 20°C to 3.6 V at 400°C. The gate to cathode blocking voltage (VGK) was measured using a customized high-voltage test set-up. The leakage current was measured 0.66 μA at a VGK of 12 kV at 20°C.

Improved Channel Mobility by Oxide Nitridation for N-Channel MOSFET on 3C-SiC(100)/Si

2016 ◽  
Vol 858 ◽  
pp. 667-670 ◽  
Author(s):  
Fan Li ◽  
Yogesh K. Sharma ◽  
M.R. Jennings ◽  
A. Pérez-Tomás ◽  
Vishal Ajit Shah ◽  
...  
Keyword(s):  
High Temperature ◽  
Room Temperature ◽  
Oxidation Process ◽  
Gate Oxide ◽  
Oxidation Temperature ◽  
Channel Mobility ◽  
Si Substrates ◽  
Nitridation Process ◽  
Long Channel

In this work we studied the gate oxidation temperature and nitridation influences on the resultant 3C-SiC MOSFET forward characteristics. Conventional long channel lateral MOSFETs were fabricated on 3C-SiC(100) epilayers grown on Si substrates using five different oxidation process. Both room temperature and high temperature (up to 500K) forward IV performance were characterised, and channel mobility as high as 90cm2/V.s was obtained for devices with nitrided gate oxide, considerable higher than the ones without nitridation process (~70 cm2/V.s).

High Temperature Nitridation of 4H-SiC MOSFETs

2016 ◽  
Vol 858 ◽  
pp. 623-626 ◽  
Author(s):  
Hua Rong ◽  
Yogesh K. Sharma ◽  
Tian Xiang Dai ◽  
Fan Li ◽  
M.R. Jennings ◽  
...  
Keyword(s):  
High Temperature ◽  
Threshold Voltage ◽  
Field Effect ◽  
Annealing Process ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Gate Oxides ◽  
Mos Capacitors ◽  
Channel Mobility ◽  
Lower Temperature

This paper presents and analyse the experimental results of 4H-SiC(0001) lateral MOSFETs and MOS capacitors with gate oxides grown directly in N2O environment or in O2 ambient followed by a N2O post oxidation annealing process. Different nitridation temperatures of 1200°C, 1300°C, 1400°C and 1500°C have been investigated. Results have demonstrated that at high temperature (>1200°C) there is a significant improvement in the interface trap density (~1.5×1011 cm-2eV-1 at 0.2 eV) and field effect channel mobility (19 cm2/V.s) of 4H-SiC MOSFET compare with those at lower temperature (1×1012 cm-2eV-1 at 0.2 eV and 4 cm2/V.s). Among those nitridation temperatures, 1300°C has found to be the most effective in increasing the field effect channel mobility and reducing threshold voltage.

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