On-State and Switching Performance of High-Voltage 15 – 20 kV 4H-SiC DMOSFETs and IGBTs

2008 ◽  
Vol 600-603 ◽  
pp. 1143-1146 ◽  
Author(s):  
Tomohiro Tamaki ◽  
Ginger G. Walden ◽  
Yang Sui ◽  
James A. Cooper
Keyword(s):  
High Voltage ◽  
Current Density ◽  
Power Dissipation ◽  
Three Dimensional ◽  
Total Power ◽  
Switching Frequency ◽  
Dimensional Parameter ◽  
Switching Performance ◽  
Blocking Voltage ◽  
Maximum Current

We compare the on-state and switching performance of high-voltage 4H-SiC n-channel DMOSFETs and p-channel IGBTs within a three-dimensional parameter space defined by blocking voltage, switching frequency, and current density. We determine the maximum current density each device can carry at a given switching frequency, such that the total power dissipation is 300 W/cm2. The IGBT current depends strongly on lifetime in the NPT buffer layer, and only weakly on lifetime in the drift layer. The MOSFET current is essentially independent of frequency.

213 W 500 Mhz 4H-SiC Static Induction Transistor

2011 ◽  
Vol 130-134 ◽  
pp. 3392-3395 ◽  
Author(s):  
Gang Chen ◽  
Peng Wu ◽  
Song Bai ◽  
Zhe Yang Li ◽  
Yun Li ◽  
...  
Keyword(s):  
Current Density ◽  
Drain Current ◽  
Total Power ◽  
Class Ab ◽  
Blocking Voltage ◽  
Finger Width ◽  
Static Induction Transistor ◽  
Recessed Gate ◽  
Total Power Output ◽  
A Current

. Silicon carbide (SiC) SITs were fabricated using home-grown epi structures. The gate is a recessed gate - bottom contact (RG - B). We designed that the mesa space 2.7μm and the gate channel is 1.2μm. One cell has 400 source fingers and each source finger width is 100μm. 1mm SiC SIT yielded a current density of 123mA/mm of drain current at a drain voltage of 20V. A maximum current density of 150 mA/mm was achieved with Vd=40V. The device blocking voltage with a gate bias of-16 V was 200 V. Packaged 24-cm devices were evaluated using amplifier circuits designed for class AB operations. A total power output in excess of 213 W was obtained with a power density of 8.5 W/cm and gain of 8.5 dB at 500 MHz under pulse operation.

Effect of Bump Shape on Current Density and Temperature Distributions in Solder Bump Joints under Electromigration

2012 ◽  
Vol 569 ◽  
pp. 82-87
Author(s):  
Yi Li ◽  
Xiu Chen Zhao ◽  
Ying Liu ◽  
Hong Li
Keyword(s):  
Current Density ◽  
Solder Bump ◽  
Three Dimensional ◽  
Maximum Temperature ◽  
Time To Failure ◽  
Element Analysis ◽  
Temperature Distributions ◽  
Maximum Current ◽  
Mean Time ◽  
Waist Radius

Three dimensional thermo-electrical finite element analysis was employed to simulate the current density and temperature distributions for solder bump joints with different bump shapes. Mean-time-to-failure (MTTF) of electromigration was discussed. It was found that as the bump volume increased from hourglass bump to barrel bump, the maximum current density increased but the maximum temperature decreased. Hourglass bump with waist radius of 240 μm has the longest MTTF.

Device Options and Design Considerations for High-Voltage (10-20 kV) SiC Power Switching Devices

2006 ◽  
Vol 527-529 ◽  
pp. 1449-1452 ◽  
Author(s):  
Yang Sui ◽  
Ginger G. Walden ◽  
Xiao Kun Wang ◽  
James A. Cooper
Keyword(s):  
High Voltage ◽  
Current Density ◽  
Drift Region ◽  
Power Devices ◽  
Power Switching ◽  
Design Considerations ◽  
Blocking Voltage ◽  
Switching Devices

We compare the on-state characteristics of five 4H-SiC power devices designed to block 20 kV. At such a high blocking voltage, the on-state current density depends heavily on the degree of conductivity modulation in the drift region, making the IGBT and thyristor attractive devices for high blocking voltages.

Comparative Study of SiC MOSFETs in High Voltage Switching Operation

2012 ◽  
Vol 717-720 ◽  
pp. 1081-1084 ◽  
Author(s):  
Tsuyoshi Funaki ◽  
Yuki Nakano ◽  
Takashi Nakamura
Keyword(s):  
Breakdown Voltage ◽  
High Voltage ◽  
Current Density ◽  
Power Device ◽  
Resistive Load ◽  
Density Condition ◽  
Switching Speed ◽  
Switching Operation ◽  
Switching Performance ◽  
Turn On

SiC power device is expected to have high breakdown voltage with low on resistance, which cannot be attainable for conventional Si device. This study evaluates the switching performance of high voltage SiC MOSFETs with comparing to that of conventional Si power MOSFET having equivalent breakdown voltage. To this end, turn-on and turn-off switching operation of MOSFETs are assessed with resistive load for same conduction current density. Though the on resistance of SiC MOSFETs are quite lower than Si MOSFET, especially for trench gate type. But, SiC MOSFETs have larger terminal capacitance. Therefore, SiC MOSFETs show slower switching speed than Si MOSFETs for same current density condition.

scholarly journals Three-dimensional optimisation of a fuel gas channel of a proton exchange membrane fuel cell for maximum current density

2011 ◽  
Vol 37 (3) ◽  
pp. 228-241 ◽  
Author(s):  
Surajudeen Olanrewaju Obayopo ◽  
Tunde Bello-Ochende ◽  
Josua Petrus Meyer
Keyword(s):  
Fuel Cell ◽  
Current Density ◽  
Proton Exchange Membrane ◽  
Three Dimensional ◽  
Proton Exchange ◽  
Fuel Gas ◽  
Gas Channel ◽  
Maximum Current Density ◽  
Maximum Current ◽  
Exchange Membrane

scholarly journals Computer-based Finite Element Modeling of Insulated Tuohy Needles Used in Regional Anesthesia

2009 ◽  
Vol 110 (6) ◽  
pp. 1229-1234 ◽  
Author(s):  
Meredith B. Cantrell ◽  
Warren M. Grill ◽  
Stephen M. Klein
Keyword(s):  
Finite Element ◽  
Finite Element Modeling ◽  
Nerve Fiber ◽  
Current Density ◽  
Three Dimensional ◽  
Element Modeling ◽  
Maximum Current Density ◽  
Maximum Current ◽  
Distal Edge ◽  
Computer Based

Background Differences in needle design may impact nerve localization. This study evaluates the electrical properties of two insulated Tuohy needles using computational finite element modeling. Methods Three-dimensional geometric computer-based models were created representing two 18-gauge, insulated Tuohy needles: (1) with an exposed metal tip and (2) with an insulated tip. The models were projected in simulated human tissue. Using finite element methodology, distributions of current-density were calculated. Voltages in the modeled medium were calculated, and activation patterns of a model nerve fiber around the tip of each needle were estimated using the activating function. Results Maximum current density on the exposed-tip needle occurred along the edge of the distal tip; the distal edge was 1.7 times larger than the side edges and 3.5 times larger than the proximal edge. Conversely, maximum current density occurred along the proximal edge of the insulated-tip Tuohy opening; the proximal edge was 1.9 times larger than the side edges of the opening and 3.5 times larger than the distal edge of the opening. Voltages generated by the exposed-tip needle were larger and had a wider spatial distribution than that of the insulated-tip needle, which restricted to the area immediately adjacent to the opening. Different changes in threshold were predicted to excite a nerve fiber as the needles were rotated or advanced toward the modeled nerve. Conclusions The needles displayed different asymmetric distributions of current density and positional effects on threshold. If this analysis is validated clinically, it may prove useful in testing stimulating needles before clinical application.

scholarly journals Analytical study of the temperature distribution in solids subjected to nonuniform moving heat sources

2013 ◽  
Vol 17 (3) ◽  
pp. 687-694 ◽  
Author(s):  
Mohamed Hamraoui ◽  
Mounir Chbiki ◽  
Najib Laraqi ◽  
Luis Roseiro
Keyword(s):  
Steady State ◽  
Temperature Distribution ◽  
Power Dissipation ◽  
Relative Velocity ◽  
Analytical Study ◽  
Three Dimensional ◽  
Total Power ◽  
Heat Sources ◽  
Reference Case ◽  
Made In

We propose in this paper an analytical study of the temperature distribution in a solid subjected to moving heat sources. The power dissipated by the heat sources is considered nonuniform. The study was made in steady state. The model is three-dimensional. It is valid regardless of the relative velocity of the source. We have considered three cases of semi-elliptic distribution of the power with: (i) the maximum at the center of the source, (ii) the maximum at the inlet of the source, (iii) the maximum at the output of the source. These configurations simulate the conformity imperfection of contact due to wear and / or the non-uniformity of contact pressure in frictional devices. We compare the temperature change for these different scenarios and for different relative velocities, considering the same total power dissipation. The reference case is that of a uniform source dissipating the same power.

Modification of Etched Junction Termination Extension for the High Voltage 4H-SiC Power Devices

2016 ◽  
Vol 858 ◽  
pp. 978-981 ◽  
Author(s):  
Hossein Elahipanah ◽  
Arash Salemi ◽  
Carl Mikael Zetterling ◽  
Mikael Östling
Keyword(s):  
Electric Field ◽  
Breakdown Voltage ◽  
High Voltage ◽  
Current Density ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
Power Devices ◽  
Process Step ◽  
Single Finger ◽  
Maximum Current

High voltage 4H-SiC bipolar junction transistors (BJTs) with modified etched junction termination extension (JTE) were fabricated and optimized in terms of the length (LJTE) and remaining dose (DJTE) of JTEs. It is found that for a given total termination length (Σ LJTEi), a decremental JTE length from the innermost edge to the outermost mesa edge of the device will result in better modification of the electric field. A breakdown voltage (BV) of 4.95 kV is measured for the modified device which shows ~20% improvement of the termination efficiency for no extra cost or extra process step. Equal-size BJTs by interdigitated-emitter with different number of fingers and cell pitches were fabricated. The maximum current gain of 40 is achieved for a single finger device with the emitter width of 40 µm at IC = 0.25 A (JC = 310 A/cm2) which corresponds to RON = 33 mΩ.cm2. It is presented that the current gain decreases by having more fingers while the maximum current gain is achieved at higher current density.

15 kV, Large Area (1 cm2), 4H-SiC p-Type Gate Turn-Off Thyristors

2013 ◽  
Vol 740-742 ◽  
pp. 978-981 ◽  
Author(s):  
Lin Cheng ◽  
Anant K. Agarwal ◽  
Craig Capell ◽  
Michael J. O'Loughlin ◽  
Khiem Lam ◽  
...  
Keyword(s):  
High Voltage ◽  
Current Density ◽  
Large Area ◽  
Test Set ◽  
High Injection ◽  
Blocking Voltage ◽  
Set Up ◽  
P Type ◽  
Drift Layer ◽  
Injection Current Density

In this paper, we report our recently developed 1 cm2, 15 kV SiC p-GTO with an extremely low differential on-resistance (RON,diff) of 4.08 mΩ•cm2 at a high injection-current density (JAK) of 600 ~ 710 A/cm2. The 15 kV SiC p-GTO was built on a 120 μm, 2×1014/cm3 doped p-type SiC drift layer with a device active area of 0.521 cm2. Forward conduction of the 15 kV SiC p-GTO was characterized at 20°C and 200°C. Over this temperature range, the RON,diff at JAK of 600 ~ 710 A/cm2 decreased from 4.08 mΩ•cm2 at 20°C to 3.45 mΩ•cm2 at JAK of 600 ~ 680 A/cm2 at 200°C. The gate to cathode blocking voltage (VGK) was measured using a customized high-voltage test set-up. The leakage current at a VGK of 15 kV were measured 0.25 µA and 0.41 µA at 20°C and 200°C respectively.

scholarly journals Effect of geometry and interfacial resistance on current distribution and energy dissipation at metal/superconductor junctions

1989 ◽  
Vol 4 (3) ◽  
pp. 530-538 ◽  
Author(s):  
Meilin Liu ◽  
Lutgard C. De Jonghe
Keyword(s):  
Energy Dissipation ◽  
Critical Current Density ◽  
Contact Resistance ◽  
Critical Current ◽  
Current Distribution ◽  
Current Density ◽  
Power Dissipation ◽  
Superconducting Phase ◽  
Total Power ◽  
Interfacial Resistance

Potential and current distributions and local energy dissipation due to Joule heating in metal-superconductor junctions have been computed as a function of geometric parameters and interfacial resistance. The primary current distribution and power dissipation are highly nonuniform in the system. The secondary current distribution and power dissipation, however, become more uniform as the interfacial resistance increases. Analysis indicates that zero contact resistance is not a stable situation since the primary distribution leads to local current densities exceeding the critical current density of the superconducting phase near the corner of the junction. Local contact failure might then initiate. A finite contact resistance is necessary for a practical application, and the minimum value of the contact resistance can be estimated from the operating current density (javg) of the device and the critical current density (jcri) of the superconducting phase. To obtain an optimum value of the contact resistance, however, one further has to take into consideration the stability and reliability of the device performance, which is, in turn, directly related to the uniformity of the current distribution and power dissipation, to temperature fluctuation of the superconducting phases brought about by local power dissipation, and to the thermal management of the system. Furthermore, a nonuniform contact resistance layer of appropriate profile can redistribute the current more effectively and more uniformly and hence reduce the total power dissipation in the system for a given jmax/javg ratio obtained by a uniform resistance layer.

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