High Dose Al+ Implanted and Microwave Annealed 4H-SiC
2012 ◽
Vol 717-720
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pp. 817-820
Keyword(s):
A post implantation microwave annealing technique has been applied for the electrical activation of Al+ implanted ions in semi-insulating 4H-SiC. The annealing temperatures have been 2000-2100°C. The implanted Al concentration has varied from 5 x 1019 to 8 x 1020 cm-3. A minimum resistivity of 2 x 10-2 Ω∙cm and about 70% electrical activation of the implanted Al has been measured at room temperature for an implanted Al concentration of 8 x 1020 cm-3 and a microwave annealing at 2100°C for 30 s.
2018 ◽
Vol 924
◽
pp. 333-338
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2006 ◽
Vol 527-529
◽
pp. 819-822
2018 ◽
Vol 924
◽
pp. 192-195
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2011 ◽
Vol 110-116
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pp. 1094-1098
Keyword(s):
2007 ◽
Vol 556-557
◽
pp. 343-346
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