SiC Sublimation Growth at Small Spacing between Source and Seed

2013 ◽  
Vol 740-742 ◽  
pp. 69-72 ◽  
Author(s):  
E.N. Mokhov ◽  
A.D. Roenkov ◽  
A.S. Segal
Keyword(s):  
Growth Rate ◽  
Growth Kinetics ◽  
High Concentration ◽  
High Quality ◽  
Sandwich Method ◽  
Sublimation Growth ◽  
Kinetics Of ◽  
Small Spacing

The growth kinetics of SiC crystals doped with Al and Ga impurities and grown by the sublimation sandwich method at a small spacing between the source and the seed (<1 mm) has been studied. Dependence of an Al-doped SiC crystals growth rate on the clearance is shown to be non-monotonic and exhibits maximum at the clearance about of 100-300 μm. Such dependence is also observed for growth of pure and Ga-doped SiC crystals but only on (0001)Si face. The derived dependencies suggest that there are some considerable kinetic limitations of the SiC growth rate. High quality SiC crystals with such high concentration of the Al impurity as 2x1021 cm-3 were grown.

Growth Kinetics and Formation of Uniform Self-Assembled InAs/GaAs Quantum Dots at

2007 ◽  
Vol 124-126 ◽  
pp. 539-542
Author(s):  
Eui Tae Kim ◽  
Anupam Madhukar
Keyword(s):  
Growth Rate ◽  
Quantum Dots ◽  
Growth Kinetics ◽  
Slow Growth ◽  
Fast Growth ◽  
Slow Growth Rate ◽  
Self Assembled ◽  
Kinetics Of ◽  
Fast Growth Rate ◽  
2D To 3D

We discuss the growth kinetics of InAs/GaAs self-assembled quantum dots (QDs) using two different InAs deposition rates, relatively fast growth rate of 0.22 ML/sec and slow growth rate of 0.054 ML/sec. With increasing InAs deposition amount to 3.0 ML, the QD density was almost constant after 2D to 3D island transition at the slow deposition rate while the QD density kept increasing and the QD size distribution was relatively broad at the fast growth rate. After the 2D to 3D transition, at the slow growth rate, further deposited In adatoms seemed to incorporate primarily into already formed islands, and thus contribute to equalize island size. The photoluminescence (PL) full-width at half maximum (FWHM) of 2.5 ML InAs QDs at 0.054 ML/sec was 23 meV at 78K. The PL characteristics of InAs/GaAs QDs were degraded significantly after thermal annealing at 550 oC for 3 hours.

Growth Kinetics Of SiO2 On (001)Si Catalyzed By Cu3Si At Elevated Temperatures

1999 ◽  
Vol 564 ◽  
Author(s):  
H. Y. Huang ◽  
L. J. Chen
Keyword(s):  
Growth Rate ◽  
Growth Kinetics ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Linear Growth ◽  
Elevated Temperatures ◽  
The Other ◽  
Wet Oxidation ◽  
Transmission Electron ◽  
Kinetics Of

AbstractThe oxidation of Si catalyzed by 170-nm-thick Cu3Si at elevated temperatures has been investigated by transmission electron microscopy and Auger electron spectroscopy. For wet oxidation at 140–180 °C, the growth rate of the oxide layer was increased with the temperature. On the other hand, as the temperature was increased above 200 °C, the growth rate slowed down. The growth kinetics of oxide was investigated. Controlling mechanisms for the growth of oxide owing to the grain growth of Cu3Si are discussed. The activation energy for the linear growth of oxide was measured to be 0. 19 ± 0.1 eV.

Controlling the Microstructure of the 2223 Phase Grains for the Fabrication of Silver Clad (Bi,Pb)2Sr2Ca2Cu3Ox Tapes Through the Growth Kinetics of the Superconducting Phases

1992 ◽  
Vol 275 ◽  
Author(s):  
Wai Lo ◽  
B. A. Glowacki
Keyword(s):  
Growth Rate ◽  
Grain Size ◽  
Liquid Phase ◽  
Bulk Density ◽  
Growth Kinetics ◽  
Major Phase ◽  
Average Grain Size ◽  
The Relationship ◽  
Kinetics Of ◽  
Fast Growth Rate

ABSTRACTOur study concentrated on the relationship between the proportions of the phases in the precursors used to synthesise the Bi-2223 phase and the ultimate microstructures of the 2223 phase materials, although the overall cation stoichiometry fixed. It was found that the final 2223 phase grains were larger, although the bulk density tended to be lower with the grains loosely packed together, when the major phase in the precursor was 2212 phase. This was proved to be partly caused by the fast growth rate of the 2212 phase grains which were eventually converted into the 2223 phase. When 2223 phase was present in the precursor, the bulk density became higher and 2223 phase grains became closely packed together, although the average grain size became smaller. This was explained by the existence of a liquid phase at higher temperatures during the formation of the 2223 phase and the sintering of the 2223 phase grains.

Sublimation Growth of AlN and GaN Bulk Crystals on SiC Seeds

2013 ◽  
Vol 740-742 ◽  
pp. 81-84 ◽  
Author(s):  
E.N. Mokhov ◽  
A.A. Wolfson ◽  
H. Helava ◽  
Yu. Makarov
Keyword(s):  
Semiconductor Devices ◽  
Crystal Quality ◽  
Bulk Crystals ◽  
High Quality ◽  
Temperature Range ◽  
Sandwich Method ◽  
Kinetic Mechanisms ◽  
Sublimation Growth

Growth techniques of high quality AlN and GaN bulk crystals on SiC seeds by sublimation sandwich method are presented. GaN crystals were grown in the temperature range of 1100-1250 °C and with addition of ammonia (NH3) to prevent GaN decomposition. GaN powder or metallic Ga was used as the source. AlN crystals up to 2 inch diameter have been grown on SiC seeds in the temperature range of 1950 -2050 0С. Kinetic mechanisms and transport features in the sandwich cell are discussed. The achieved high crystal quality has allowed producing semiconductor devices on their basis, in particular, ultraviolet LEDs

Methodical approach for studying kinetics of short and long fatigue cracks growth for irradiated reactor materials. Part 1. Statement of problem. The effect of the initial notch acuity on the fatigue crack rate on small-sized specimens

2019 ◽  
pp. 191-204 ◽  
Author(s):  
V. I. Smirnov ◽  
A. J. Minkin ◽  
B. Z. Margolin ◽  
V. I. Kokhonov
Keyword(s):  
Growth Rate ◽  
Fatigue Crack ◽  
Crack Growth ◽  
Growth Kinetics ◽  
Fatigue Cracks ◽  
Stress Concentration Zone ◽  
Concentration Zone ◽  
Methodical Approach ◽  
Reactor Materials ◽  
Kinetics Of

The paper considers methodical issues in the experimental research of fatigue crack growth kinetics when testing irradiated small-sized specimens. The effect of the initial notch acuity is studied on the long crack growth rate. The stress concentration zone sizes are estimated for notches of various types. A brif literature review of the main problems in the study of the growth kinetics of short fatigue cracks has been performed. The tasks of further research are formulated. 

Microstructure and Kinetic Analysis of the Initial Stages of SiC Formation in a Rapid Thermal Processor

1991 ◽  
Vol 224 ◽  
Author(s):  
Ki-Bum Kim ◽  
Jimmy C. Liao ◽  
Brad J. Burrow ◽  
Eileen A. Sullivan
Keyword(s):  
Growth Rate ◽  
High Resolution ◽  
Growth Kinetics ◽  
Kinetic Data ◽  
Carbon Layer ◽  
Cross Sectional ◽  
Si Substrates ◽  
Growth Modes ◽  
Reaction Proceeds ◽  
Kinetics Of

AbstractWe have investigated the evolution of the microstructure, growth modes, and growth kinetics of β-SiC in a rapid thermal processor using FTIR, ESCA, and TEM. SiC layers were formed by reacting C2H4 with Si substrates between 900 and 1300°C at 5 torr. We found that SiC forms discrete nuclei at 900°C, a mixture of discrete nuclei with a thin β-SiC layer in between those nuclei at around 1000°C, and a continuous β-SiC layer above 1100°C. In all cases, β-SiC grows epitaxially on Si substrates. In addition, we identified that a graphitic carbon layer is formed on top of a continuous β-SiC layer. The thickness of the SiC layer was deduced from the integrated absorption spectra of FTIR and measured from the high resolution cross-sectional TEM micrographs. Kinetic data indicate that SiC grows rapidly at the initial stages of reaction. The growth rate, however, is retarded significantly as the reaction proceeds.

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