Continuous Growth of Buffer/Drift Epitaxial Stack Based on 4H-SiC by Quick Change of N2 Flow Rate under High Growth Rate Condition

2019 ◽  
Vol 963 ◽  
pp. 97-100
Author(s):  
Yoshiaki Daigo ◽  
Akio Ishiguro ◽  
Shigeaki Ishii ◽  
Takehiko Kobayashi
Keyword(s):  
Growth Rate ◽  
Carrier Concentration ◽  
Flow Rate ◽  
High Speed ◽  
High Growth ◽  
High Growth Rate ◽  
Average Growth ◽  
Rate Condition ◽  
Continuous Growth ◽  
Drift Layer

N-type 4H-SiC homo-epitaxial films were grown under high growth rate condition by high speed wafer rotation vertical CVD tool, and dependence on N2 flow rate for in-wafer distribution of thickness and carrier concentration was investigated. By adjusting only the N2 flow rate from 0.33 to 130 sccm, average carrier concentration of the SiC film was controlled within a range from 3 x 1015 to 1 x 1018 cm-3, while maintaining good in-wafer uniformity less than ±7.0%. Average growth rate higher than 54 μm/h and in-wafer uniformity less than ±3.1% were maintained and no dependence for thickness distribution on N2 flow rate was observed. Buffer/drift epitaxial stack using quick change of N2 flow rate was fabricated, and the crystalline quality and steepness of N concentration at buffer/drift interface were also investigated. The epitaxial stack showed lower defect density compared with single drift layer and showed steep interface between buffer layer and drift layer.

Developing Technologies of SiC Gas Source Growth Method

2016 ◽  
Vol 858 ◽  
pp. 23-28 ◽  
Author(s):  
Jun Kojima ◽  
Yuichiro Tokuda ◽  
Emi Makino ◽  
Naohiro Sugiyama ◽  
Norihiro Hoshino ◽  
...  
Keyword(s):  
Growth Rate ◽  
Mass Production ◽  
High Speed ◽  
High Growth ◽  
Maximum Growth ◽  
High Growth Rate ◽  
Average Growth ◽  
Gas Source ◽  
Growth Method ◽  
Production Technologies

In order to diffuse the use of SiC, mass-production technologies of SiC wafers are needed. It is easy to be understood that high-speed and long-sized growth technologies are connected directly with mass-production technologies. The gas source growth method such as HT-CVD has the possibilities and the potential of the high-speed and long-sized growth. In this article, it was clarified that the high growth rate were achieved by the control of the source gas partial pressures and by the gas boundary layers. The average growth rate was 1mm/h on the f4 inch-diameter crystal, and the maximum growth rate reached 3.6 mm/h on the 12.5x25 mm tetragon by the above gas control. The crystal qualities of the gas source methods were also evaluated the equivalent level in comparison with the sublimation method. Concerning the 1mm/h-growth f3 inch crystal, the densities of TSDs were kept in the 102 cm-2 levels from the seed to the upper-side of the ingot. Moreover, the ingot size increased year by year and a f4 inch x 43 mm sized ingot has been developed.

Development of a Practical High-Rate CVD System

2008 ◽  
Vol 600-603 ◽  
pp. 119-122 ◽  
Author(s):  
Yuuki Ishida ◽  
Tetsuo Takahashi ◽  
Hajime Okumura ◽  
Kazuo Arai ◽  
Sadafumi Yoshida
Keyword(s):  
Growth Rate ◽  
Carrier Concentration ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
High Growth ◽  
High Growth Rate ◽  
High Rate ◽  
Average Growth Rate ◽  
Average Growth ◽  
Process Gases

We have developed a new chemical vapor deposition (CVD) system that is capable of a high growth rate of over 100 µm/h with good uniformities of thickness and carrier concentration. In this CVD system, the process gases contribute efficiently to epitaxial growth. In a demonstration of the abilities of the CVD system, we achieved an average growth rate of 140 µm/h, a thickness uniformity of 3.9%, and a carrier concentration uniformity of 8.9% in a 2-inch wafer, without degradation of the crystallinity.

High-Speed Solution Growth of Single Crystal AlN from Cr-Co-Al Solvent

2016 ◽  
Vol 858 ◽  
pp. 1210-1213 ◽  
Author(s):  
Shota Watanabe ◽  
Masashi Nagaya ◽  
Yukihisa Takeuchi ◽  
Kenta Aoyagi ◽  
S. Harada ◽  
...  
Keyword(s):  
Growth Rate ◽  
Temperature Distribution ◽  
Numerical Analysis ◽  
Single Crystal ◽  
High Speed ◽  
Nitrogen Concentration ◽  
High Growth ◽  
High Growth Rate ◽  
Solution Growth ◽  
High Affinity

We achieved a high growth rate in solution growth of AlN single crystal by suppressing unintentional precipitations near the surface of solvent and by increasing the equilibrium nitrogen concentration in the solvent. In order to suppress unintentional precipitations, we made the solvent supersaturated just above the surface of the substrate by optimizing the composition of the solvent and the temperature distribution based on thermodynamic numerical analysis. In particular, we focused on interactions between nitrogen or aluminum and solvent elements, leading to the increase of the equilibrium nitrogen concentration. We selected chromium and cobalt due to their high affinity with nitrogen or aluminum. Consequently, we successfuly achieved growth rate as high as 200 μm/h in maximum.

150mm Silicon Carbide Selective Embedded Epitaxial Growth Technology by CVD

2017 ◽  
Vol 897 ◽  
pp. 43-46 ◽  
Author(s):  
Kazukuni Hara ◽  
Hiroaki Fujibayashi ◽  
Yuuichi Takeuchi ◽  
Shoichiro Omae
Keyword(s):  
Growth Rate ◽  
Silicon Carbide ◽  
Epitaxial Growth ◽  
High Speed ◽  
Growth Process ◽  
High Growth ◽  
High Growth Rate ◽  
High Speed Rotation ◽  
Speed Rotation ◽  
Growth Technology

In this work, we have developed a selective embedded epitaxial growth process on 150-mm-diameter wafer by vertical type hot wall CVD reactor with the aim to realize the all-epitaxial 4H-SiC MOSFETs [1, 2, 3, 4, 5]. We found that at elevated temperature and adding HCl, the epitaxial growth rate at the bottom of trench is greatly enhanced compare to growth on the mesa top. And we obtain high growth rate 7.6μm/h at trench bottom on 150mm-diameter-wafer uniformly with high speed rotation (1000rpm).

Fast 4H-SiC Epitaxial Growth on 150 mm Diameter Area with High-Speed Wafer Rotation

2014 ◽  
Vol 778-780 ◽  
pp. 117-120 ◽  
Author(s):  
Hiroaki Fujibayashi ◽  
Masahiko Ito ◽  
Hideki Ito ◽  
Isaho Kamata ◽  
Masami Naitou ◽  
...  
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Growth Rates ◽  
High Speed ◽  
Smooth Surface ◽  
Doping Concentration ◽  
Defect Density ◽  
High Growth ◽  
High Growth Rate ◽  
Step Bunching

A single wafer type 150 mm vertical 4H-SiC epitaxial reactor with high-speed wafer rotation was developed. The rotation of the wafer at high speed significantly enhances the growth rate, and high growth rates of 40–50 μm/h are possible on 4°off-cut 4H-SiC substrates. In addition, a low defect density and smooth surface without macro step bunching can be achieved. Excellent uniformity of thickness and doping concentration was obtained for a 150 mm wafer at a high growth rate of 50 μm/h.

Exploring SiC Growth Limitation of Vapor-Liquid-Solid Mechanism when Using Two Different Carbon Precursors

2013 ◽  
Vol 740-742 ◽  
pp. 323-326
Author(s):  
Kassem Alassaad ◽  
François Cauwet ◽  
Davy Carole ◽  
Véronique Soulière ◽  
Gabriel Ferro
Keyword(s):  
Growth Rate ◽  
High Growth ◽  
High Growth Rate ◽  
Carbon Precursor ◽  
Growth Limitation ◽  
Vapor Liquid Solid ◽  
Partial Pressures ◽  
Vapor Liquid Solid Mechanism ◽  
Vls Growth ◽  
Vapor Liquid

Abstract. In this paper, conditions for obtaining high growth rate during epitaxial growth of SiC by vapor-liquid-solid mechanism are investigated. The alloys studied were Ge-Si, Al-Si and Al-Ge-Si with various compositions. Temperature was varied between 1100 and 1300°C and the carbon precursor was either propane or methane. The variation of layers thickness was studied at low and high precursor partial pressure. It was found that growth rates obtained with both methane and propane are rather similar at low precursor partial pressures. However, when using Ge based melts, the use of high propane flux leads to the formation of a SiC crust on top of the liquid, which limits the growth by VLS. But when methane is used, even at extremely high flux (up to 100 sccm), no crust could be detected on top of the liquid while the deposit thickness was still rather small (between 1.12 μm and 1.30 μm). When using Al-Si alloys, no crust was also observed under 100 sccm methane but the thickness was as high as 11.5 µm after 30 min growth. It is proposed that the upper limitation of VLS growth rate depends mainly on C solubility of the liquid phase.

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