Low Temperature Chemical Synthesis of p-Type SnS Thin Films Suitable for Photovoltaic Structures

2013 ◽  
Vol 209 ◽  
pp. 82-85
Author(s):  
T.H. Patel
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Band Gap ◽  
Room Temperature ◽  
Chemical Compositions ◽  
X Rays ◽  
Average Grain Size ◽  
Sns Thin Films ◽  
P Type ◽  
Deposited Film

SnS thin film has been deposited on glass substrate at room temperature using low cost, environmental friendly chemical bath deposition (CBD) technique. The structural parameters of the deposited film have been investigated through X- ray diffraction measurements. The deposited SnS film found almost crystalline with preferred orientations along (111) planes revealing an orthorhombic phase of herzenbergite SnS structure. The lattice parameters and dislocation density were determined. The average grain size estimated to be ~ 25 nm. The surface morphology of the film examined using scanning electron microscopy (SEM) show uniform granular and any crack or pinhole free deposition of the film. The chemical compositions of the film examined using energy dispersive analysis of x-rays (EDAX) confirmed stoichiometric deposition. The analysis of the optical absorption spectra of the deposited film in the wavelength range of 200-1200 nm indicate that direct allowed transitions are dominant in the film. The direct band gap of the film determined to be ~ 1.92 eV which is higher than those reported earlier for bulk or single crystal SnS, exhibiting quantum size effect at the observed grain size in the film. This value of band gap is promising for possible use of the deposited film as absorption layer in photovoltaic structures like solar cells. The thermoelectric power measurements indicate p-type electrical conductivity of the deposited films. A systematic study on room temperature chemical deposition and characterization of SnS thin films suitable for absorber layer in photovoltaic structures has been reported.

scholarly journals Influence of grain size on the band-gap of annealed SnS thin films

2013 ◽  
Vol 548 ◽  
pp. 241-246 ◽  
Author(s):  
Priyal Jain ◽  
P. Arun
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Band Gap ◽  
Sns Thin Films

Dielectric and microstructural properties of barium titanate zirconate thin films on copper substrates

2005 ◽  
Vol 20 (10) ◽  
pp. 2838-2844 ◽  
Author(s):  
J.F. Ihlefeld ◽  
J-P. Maria ◽  
W. Borland
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Barium Titanate ◽  
Room Temperature ◽  
Metallic Copper ◽  
Copper Substrate ◽  
Hydrogen Gas ◽  
Average Grain Size ◽  
Reductive Atmosphere ◽  
Unit Cell Dimensions

Barium titanate zirconate, Ba(Ti1−xZrx)O3 (0 ≤ x ≤ 0.25), thin films were deposited via the chemical solution deposition (CSD) method directly on copper foils. The films were processed in a reductive atmosphere containing nitrogen, water vapor, and hydrogen gas at 900 °C to preserve the metallic copper substrate during crystallization. Increasing the fraction of BaZrO3 revealed several effects, including an increase in unit cell dimensions, a decrease in both the temperature and value of the maximum permittivity, as well as a decrease in the average grain size of the films. The decrease in the relative permittivity was attributed to a grain size effect as opposed to zirconium substitution. In film compositions containing 25 mol% BaZrO3, the permittivity below Tmax became dispersive, and the ferroelectric transitions became increasingly diffuse. These characteristics suggest relaxor-like behavior. The dielectric tunability of Ba(Ti1−xZrx)O3 was studied at room temperature and at Tmax for each composition. There was little variation in the tunability with measurement temperature; however compositions that were ferroelectric at room temperature saw a decrease in hysteresis at Tmax, and all compositions showed an increase in permittivity.

scholarly journals The Effect of Annealing on The Structural and Optical Properties of Copper Oxide Thin Films Prepared by SILAR Method

2014 ◽  
Vol 11 (2) ◽  
pp. 718-729
Author(s):  
Baghdad Science Journal
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Copper Oxide ◽  
Annealed Sample ◽  
Film Structure ◽  
X Rays ◽  
Oxide Thin Films ◽  
Silar Method ◽  
Average Grain Size ◽  
Xrd Patterns

Copper oxide thin films were deposited on glass substrate using Successive Ionic Layer Adsorption and Reaction (SILAR) method at room temperature. The thickness of the thin films was around 0.43?m.Copper oxide thin films were annealed in air at (200, 300 and 400°C for 45min.The film structure properties were characterized by x-ray diffraction (XRD). XRD patterns indicated the presence of polycrystalline CuO. The average grain size is calculated from the X-rays pattern, it is found that the grain size increased with increasing annealing temperature. Optical transmitter microscope (OTM) and atomic force microscope (AFM) was also used. Direct band gap values of 2.2 eV for an annealed sample and (2, 1.5, 1.4) eV at 200, 300,400oC respectively.

Transparent p- and n-Type Conductive Oxides With Delafossite Structure

2000 ◽  
Vol 623 ◽  
Author(s):  
Hiroshi Yanagi ◽  
Kazushige Ueda ◽  
Shuntaro Ibuki ◽  
Tomomi Hase ◽  
Hideo Hosono ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Band Gap ◽  
Room Temperature ◽  
Optical Band Gap ◽  
Conducting Oxides ◽  
Transparent Conducting ◽  
Delafossite Structure ◽  
P Type ◽  
Type Conduction

AbstractThin films of CuAlO2, CuGaO2 and AglnO2 with delafossite structure were prepared on sapphire substrates by pulsed laser deposition method. The resulting CuA102 thin films exhibited p-type conduction and the electrical conductivity at room temperature was 0.3 Scm−1. CuGaO2 thin films were grown epitaxially on μ-Al2O3 (001) surface and showed p-type conduction (conductivity at room temperature = 0.06 S cm−1). The optical band gap was estimated to be ∼3.5 eV for CuAlO2 or ∼3.6 eV for CuGaO2. On the other hand, the thin film of Sn doped AglnO2 exhibited n-type conduction. The optical band gap and electrical conductivity at room temperature were ∼4.1 eV and 70 S cm−1, respectively. The recent work demonstrates the validity of our chemical design concept for p- and n-type transparent conducting oxides, providing an opportunity for realization of transparent p-n junction using delafossite-type oxides.

scholarly journals Experimental Study on the Thickness-Dependent Hardness of SiO2 Thin Films Using Nanoindentation

Coatings ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 23
Author(s):  
Weiguang Zhang ◽  
Jijun Li ◽  
Yongming Xing ◽  
Xiaomeng Nie ◽  
Fengchao Lang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Integrated Circuits ◽  
Film Thickness ◽  
Depth Range ◽  
Micro Electro Mechanical Systems ◽  
Si Substrates ◽  
Sio2 Thin Film ◽  
Average Grain Size

SiO2 thin films are widely used in micro-electro-mechanical systems, integrated circuits and optical thin film devices. Tremendous efforts have been devoted to studying the preparation technology and optical properties of SiO2 thin films, but little attention has been paid to their mechanical properties. Herein, the surface morphology of the 500-nm-thick, 1000-nm-thick and 2000-nm-thick SiO2 thin films on the Si substrates was observed by atomic force microscopy. The hardnesses of the three SiO2 thin films with different thicknesses were investigated by nanoindentation technique, and the dependence of the hardness of the SiO2 thin film with its thickness was analyzed. The results showed that the average grain size of SiO2 thin film increased with increasing film thickness. For the three SiO2 thin films with different thicknesses, the same relative penetration depth range of ~0.4–0.5 existed, above which the intrinsic hardness without substrate influence can be determined. The average intrinsic hardness of the SiO2 thin film decreased with the increasing film thickness and average grain size, which showed the similar trend with the Hall-Petch type relationship.

scholarly journals Experimental and Numerical Investigation of the ECAP Processed Copper: Microstructural Evolution, Crystallographic Texture and Hardness Homogeneity

Metals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 607
Author(s):  
A. I. Alateyah ◽  
Mohamed M. Z. Ahmed ◽  
Yasser Zedan ◽  
H. Abd El-Hafez ◽  
Majed O. Alawad ◽  
...  
Keyword(s):  
Grain Size ◽  
Equal Channel Angular Pressing ◽  
Cross Section ◽  
Room Temperature ◽  
Pure Copper ◽  
High Density ◽  
Ecap Processing ◽  
Heterogeneous Distribution ◽  
Angular Pressing ◽  
Average Grain Size

The current study presents a detailed investigation for the equal channel angular pressing of pure copper through two regimes. The first was equal channel angular pressing (ECAP) processing at room temperature and the second was ECAP processing at 200 °C for up to 4-passes of route Bc. The grain structure and texture was investigated using electron back scattering diffraction (EBSD) across the whole sample cross-section and also the hardness and the tensile properties. The microstructure obtained after 1-pass at room temperature revealed finer equiaxed grains of about 3.89 µm down to submicrons with a high density of twin compared to the starting material. Additionally, a notable increase in the low angle grain boundaries (LAGBs) density was observed. This microstructure was found to be homogenous through the sample cross section. Further straining up to 2-passes showed a significant reduction of the average grain size to 2.97 µm with observable heterogeneous distribution of grains size. On the other hand, increasing the strain up to 4-passes enhanced the homogeneity of grain size distribution. The texture after 4-passes resembled the simple shear texture with about 7 times random. Conducting the ECAP processing at 200 °C resulted in a severely deformed microstructure with the highest fraction of submicron grains and high density of substructures was also observed. ECAP processing through 4-passes at room temperature experienced a significant increase in both hardness and tensile strength up to 180% and 124%, respectively.

scholarly journals On the multiplying factor for the estimation of the average grain size in thin films

2021 ◽  
Vol 196 ◽  
pp. 113748
Author(s):  
Srinivas K. Yadavalli ◽  
Mingyu Hu ◽  
Nitin P. Padture
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Average Grain Size

LiNiO2 Thin Films Fabricated by Diffusion of Li on Ni Tapes

2007 ◽  
Vol 336-338 ◽  
pp. 505-508
Author(s):  
Cheol Jin Kim ◽  
In Sup Ahn ◽  
Kwon Koo Cho ◽  
Sung Gap Lee ◽  
Jun Ki Chung
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Grain Size ◽  
Sol Gel ◽  
Surface Oxidation ◽  
Cold Isostatic Pressing ◽  
Tube Furnace ◽  
Treatment Conditions ◽  
Average Grain Size ◽  
Cold Rolling And Annealing

LiNiO2 thin films for the application of cathode of the rechargeable battery were fabricated by Li ion diffusion on the surface oxidized NiO layer. Bi-axially textured Ni-tapes with 50 ~ 80 μm thickness were fabricated using cold rolling and annealing of Ni-rod prepared by cold isostatic pressing of Ni powder. Surface oxidation of Ni-tapes were conducted using tube furnace or line-focused infrared heater at 700 °C for 150 sec in flowing oxygen atmosphere, resulted in NiO layer with thickness of 400 and 800 μm, respectively. After Li was deposited on the NiO layer by thermal evaporation, LiNiO2 was formed by Li diffusion through the NiO layer during subsequent heat treatment using IR heater with various heat treatment conditions. IR-heating resulted in the smoother surface and finer grain size of NiO and LiNiO2 layer compared to the tube-furnace heating. The average grain size of LiNiO2 layer was 0.5~1 μm, which is much smaller than that of sol-gel processed LiNiO2. The reacted LiNiO2 region showed homogeneous composition throughout the thickness and did not show any noticeable defects frequently found in the solid state reacted LiNiO2, but crack and delamination between the reacted LiNiO2 and Ni occurred as the reaction time increased above 4hrs.

Fabrication and Photoelectrochemical Characterization of Fe, Co, Ni and Cu-Doped TiO2 Thin Films

2013 ◽  
Vol 764 ◽  
pp. 266-283 ◽  
Author(s):  
Ibram Ganesh ◽  
Rekha Dom ◽  
P.H. Borse ◽  
Ibram Annapoorna ◽  
G. Padmanabham ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Metal Ions ◽  
Band Gap ◽  
Metal Ion ◽  
Band Gap Energy ◽  
Chemical Compositions ◽  
Gap Energy ◽  
Glass Substrates ◽  
Photoelectrochemical Characterization

Different amounts of Fe, Co, Ni and Cu-doped TiO2 thin films were prepared on fluorine doped tin oxide (FTO) coated soda-lime glass substrates by following a conventional sol-gel dip-coating technique followed by heat treatment at 550 and 600°C for 30 min. These thin films were characterized for photo-current, chronoamperometry and band-gap energy values. The chemical compositions of metals-doped TiO2 thin films on FTO glass substrates were confirmed by XPS spectroscopic study. The metal-ions doped TiO2 thin films had a thickness of <200 nm="" optical="" transparency="" of="">80%, band-gap energy of >3.6 eV, and a direct band-to-band energy transition. The photoelectrochemical (PEC) studies revealed that all the metal-ions doped TiO2 thin films exhibit n-type semi-conducting behavior with a quite stable chronoamperometry and photo-currents that increase with the increase of applied voltage but decrease with the dopant metal-ion concentration in the thin film. Furthermore, these thin films exhibited flat-band potentials amenable to water oxidation reaction in a PEC cell. The 0.5 wt.% Cu-doped TiO2 thin film electrode exhibited an highest incident photon-to-current conversion efficiency (IPCE) of about 21%.

Band gap tuning and p to n-type transition in Mn-doped CuO nanostructured thin films

2022 ◽  
Vol 43 (1) ◽  
pp. 012801
Author(s):  
R. Rahaman ◽  
M. Sharmin ◽  
J. Podder
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Spray Pyrolysis Technique ◽  
Band Gap Energy ◽  
Dielectric Constants ◽  
X Rays ◽  
Electron Effective Mass ◽  
Mn Doping ◽  
Type Transition ◽  
Mn Doped

Abstract Here we discuss the synthesis of copper (II) oxide (CuO) and manganese (Mn)-doped CuO thin films varying with 0 to 8 at% Mn using the spray pyrolysis technique. As-deposited film surfaces comprised of agglomerated spherical nanoparticles and a semi-spongy porous structure for 4 at% Mn doping. Energy dispersive analysis of X-rays confirmed the chemical composition of the films. X-ray diffraction spectra showed a polycrystalline monoclinic structure with the predominance of the ( 11) peak. Optical band gap energy for direct and indirect transitions was estimated in the ranges from 2.67–2.90 eV and 0.11–1.73 eV, respectively. Refractive index and static dielectric constants were computed from the optical spectra. Electrical resistivity of CuO and Mn-doped CuO (Mn:CuO) thin films was found in the range from 10.5 to 28.6 Ω·cm. The tiniest electron effective mass was calculated for 4 at% Mn:CuO thin films. P to n-type transition was observed for 4 at% Mn doping in CuO films. Carrier concentration and mobility were found in the orders of 1017 cm–3 and 10–1 cm2/(V·s), respectively. The Hall coefficient was found to be between 9.9 and 29.8 cm3/C. The above results suggest the suitability of Mn:CuO thin films in optoelectronic applications.

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