Multi Beam Full Cut Dicing of Thin Si IC Wafers

2015 ◽  
Vol 2015 (DPC) ◽  
pp. 001446-001474
Author(s):  
Jeroen van Borkulo ◽  
Richard van der Stam ◽  
Guido Knippels
Keyword(s):  
Dominant Role ◽  
Semiconductor Industry ◽  
Single Step ◽  
Efficient Manner ◽  
Technology Roadmap ◽  
Beam Laser ◽  
3D Packaging ◽  
Cost Efficient ◽  
Low K ◽  
Si Wafer

The ongoing trend to thinner wafers which are needed for continuous miniaturization, 3D packaging and IC performance, inevitably means that sole blade dicing evolution is coming to an end. Over the last years several technologies to handle the separation process of thin Si wafer dicing have been evaluated (DBG, Stealth, Plasma, etc). Although they are capable for certain applications to meet the process specifications, they achieve this at expense of flexibility, productivity and process costs. ALSI, the inventor of multi beam dicing for semiconductor materials, has developed a technology using a multi beam laser concept which allows to dice through thin Si IC wafers while achieving a die strength equal or higher than achieved with blade dicing. In this single step process a multi beam laser configuration allows to remove the (ultra) low-K and metal top structures, dice through the Si substrate and recover the die strength (>450MPa for a 70um Si wafer). This technology allows the semiconductor industry to continue with the development of advanced node wafer technology utilizing (ultra) low-K and thick metal structures while having a separation technology that can cope with all these process steps. The presentation will address how the multi beam laser dicing process is an enabling technology and the first process in the world that can meet the die strength criteria without the need of additional process steps which increase the cost and reduce the flexibility and yield of the process. Multi beam laser dicing allows semiconductor manufacturers to execute their technology roadmap in a cost efficient manner. This presentation will address in depth, the challenges and issue's that semiconductor manufacturers are facing with respect to the dicing of thin (ultra) low-K IC wafers. We will present the die strength and quality that has been achieved using the multi beam dicing technology and compare this to other separation technologies. We will disclose how a multi beam process will play a dominant role in achieving an extremely small Heat Affected Zone combined with a significantly higher productivity. It will be demonstrated how a unique combination and optimization of multiple beams, pulse duration, and low pulse energy, can meet the challenging requirements set by the industry. In addition dicing results and achieved productivities will be presented.

Comparison between Single & Multi Beam Laser Grooving of Low-K layers

2012 ◽  
Vol 2012 (1) ◽  
pp. 000433-000439 ◽  
Author(s):  
Jeroen van Borkulo ◽  
Rene Hendriks ◽  
Peter Dijkstra
Keyword(s):  
Laser Pulses ◽  
Efficient Manner ◽  
Single Beam ◽  
Performance Improvements ◽  
Technology Roadmap ◽  
Beam Laser ◽  
Hybrid Solutions ◽  
3D Packaging ◽  
Future Technologies ◽  
Low K

The traditional blade dicing technology has gone through an impressive evolution keeping up with quality, cost and miniaturization requirements that the semiconductor technology roadmaps introduced and specified. However, since wafer technologies have dropped below 90nm node and low k materials were introduced it became clear that blade dicing evolution came to an end and expensive hybrid solutions such as combined laser grooving processes and blade dicing technologies were required to achieve the desired product reliability. Similar situations have been seen with the ongoing trend to thinner wafer that are needed for miniaturization, 3D packaging and IC performance improvements. To achieve sufficient mechanical strength, complex dicing technologies and sequences have been introduced which do not respond to the requirements for current and near future technologies. This paper will discuss the low-k grooving process by laser pulses for IC wafers. The low-K laser grooving technology allows semiconductor manufacturers to execute the technology roadmap and continue to comply with Moore's law in an efficient manner. In specific this paper will elaborate on the comparison study made between the single beam and multi beam low-K grooving process. Together with a large IDM customer a comparison has been done to determine the results on quality, Heat Affected Zone (HAZ), productivity and yield.

Wafer-Level, Compliant, Off-Chip Interconnects for Next-Generation Low-K Dielectric/Cu IC’s

2006 ◽  
Author(s):  
Karan Kacker ◽  
George Lo ◽  
Suresh K. Sitaraman
Keyword(s):  
Dielectric Material ◽  
Semiconductor Industry ◽  
Cost Effective ◽  
Organic Substrate ◽  
Integrative Approach ◽  
Wafer Level ◽  
Technology Roadmap ◽  
Cte Mismatch ◽  
Compliant Interconnect ◽  
Low K

Demand for off-chip bandwidth has continued to increase. It is projected by the Semiconductor Industry Association in their International Technology Roadmap for Semiconductors (ITRS) that by the year 2015, the chip-to-substrate area-array input-output interconnects will require a pitch of 70 μm. Compliant off-chip interconnects show great potential to address these needs. G-Helix is a lithography-based electroplated compliant interconnect that can be fabricated at the wafer level. G-Helix interconnects exhibit excellent compliance in all three orthogonal directions, and can accommodate the CTE mismatch between the silicon die and the organic substrate without requiring an underfill. Also, these compliant interconnect are less likely to crack or delaminate the low-K dielectric material in current and future ICs. The interconnects are also potentially cost effective as they can be fabricated using conventional wafer fabrication infrastructure. In this paper we present an integrative approach which uses interconnects with varying compliance and thus varying electrical preformance from the center to the edge of the die. Using such a varying geometry from the center to the edge of the die, the system performance can be tailored by balancing electrical requirements against thermo-mechanical reliability concerns. We also discuss the reliability assessment results of helix interconnects assembled on an organic substrate. Results from mechanical characterization experiments are also presented.

Imaging and Analytical Challenges for Nanoscale Semiconductor Technology: Breakthrough Needs for Development and Manufacturing

1997 ◽  
Vol 3 (S2) ◽  
pp. 449-450
Author(s):  
Robert C. McDonald ◽  
A. John Mardinly ◽  
David W. Susnitzky
Keyword(s):  
Process Development ◽  
Semiconductor Industry ◽  
Large Fraction ◽  
Measurement Tool ◽  
Technology Roadmap ◽  
Transmission Electron ◽  
New Process ◽  
Dielectric Structures ◽  
Multilayer Metal ◽  
Si Wafer

The complexity of today’s commercial semiconductors has contributed to tremendous gains in device performance; millions of transistors are now packed into each square centimeter of silicon. The reduction of scale occurring within the semiconductor industry places extraordinary new demands on transmission electron microscopy: TEM is becoming a required precision measurement tool for manufacturing and a necessary analytical tool for R&D and failure analysis support. This paper reviews the industry’s needs for advanced TEM sample preparation, imaging and microanalysis and outlines the challenges presented to the TEM community as device dimensions continue along the National Technology Roadmap.In the semiconductor industry, TEM is applied to process debugging, yield engineering, tool qualifications, single-bit failure analyses, and new process development. A large fraction of the analysis effort focuses on transistor, metal, interconnect and dielectric structures grown on and into the Si wafer. Fig. 1 shows a TEM image of a multilayer metal in a near-current generation microprocessor to illustrate the scale and nature of complexity.

Focused Ion Beam Analysis of Low-K Dielectrics

2000 ◽  
Author(s):  
H. J. Bender ◽  
R. A. Donaton
Keyword(s):  
Electron Microscope ◽  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Single Step ◽  
Specimen Preparation ◽  
Transmission Electron ◽  
Beam Analysis ◽  
Low K ◽  
Scanning Electron

Abstract The characteristics of an organic low-k dielectric during investigation by focused ion beam (FIB) are discussed for the different FIB application modes: cross-section imaging, specimen preparation for transmission electron microscopy, and via milling for device modification. It is shown that the material is more stable under the ion beam than under the electron beam in the scanning electron microscope (SEM) or in the transmission electron microscope (TEM). The milling of the material by H2O vapor assistance is strongly enhanced. Also by applying XeF2 etching an enhanced milling rate can be obtained so that both the polymer layer and the intermediate oxides can be etched in a single step.

Investigation on the Machining of Thick Diamond Films by EDM Together with Mechanical Polishing

2007 ◽  
Vol 24-25 ◽  
pp. 377-382
Author(s):  
Rong Fa Chen ◽  
Dun Wen Zuo ◽  
Yu Li Sun ◽  
Wen Zhuang Lu ◽  
D.S. Li ◽  
...  
Keyword(s):  
Diamond Films ◽  
Polycrystalline Diamond ◽  
Mechanical Polishing ◽  
Polishing Process ◽  
Two Stage ◽  
Efficient Manner ◽  
Raman Scattering Spectroscopy ◽  
Electro Discharge Machining ◽  
Diamond Polishing ◽  
Cost Efficient

Although research on various diamond polishing techniques has been carried for years, some issues still need to be examined in order to facilitate application on large areas in a cost-efficient manner. A compositive technique for machining efficiently thick diamond films prepared by DC plasma arc jet is reported in the present paper. A two-stage polishing was applied on thick polycrystalline diamond films, by employing first electro-discharge machining (EDM) for rough polishing and subsequently mechanical polishing for finishing operations. Experimental results obtained clearly indicate the applicability of the proposed two-stage technique for fabricating transparent diamond films that can be used for the production of X-ray windows. Appropriate etching with EDM is an effective pretreatment method for enhancing the efficiency of rough polishing process in mechanical polishing of thick diamond film. The machined surfaces of diamond films are studied by Scanning Electron Microscope (SEM) and Raman Scattering Spectroscopy (Raman).

Achieving Indonesian Oil and Gas production to 1 million barrels per day by 2030 using Nanoflooding as Novel EOR Method: Dream vs. Reality

2021 ◽  
Author(s):  
L. Hendraningrat
Keyword(s):  
Oil Recovery ◽  
Cost Efficiency ◽  
Oil And Gas ◽  
Gas Production ◽  
Oil Price ◽  
Efficient Manner ◽  
Oil And Gas Production ◽  
Cost Efficient ◽  
Nano Size ◽  
Production Target

In low oil price environments, conducting affordable enhanced oil recovery (EOR) projects can be very challenging. One item of interest for successful future EOR should be in how produced fluids are treated and how to achieve cost-efficiency. Nanoflooding, is an emerging EOR technique, which has attracted deployment in recent years. Meanwhile, Indonesia continues to progress towards the national oil and gas production target of one million barrels per day by 2030. This paper presents the observation of opportunities and challenges of using nanoflooding to enable oil and gas production in Indonesia to achieve its desired targets. The study began by mapping the pain points in major oilfields in Indonesia. We observed and discussed the advantage and limitation of traditional mature EOR techniques, status, and ongoing application of EOR in Indonesia. Then, we briefly explained the main reasons why nanoflooding can be considered for future implementation in accelerating oil production in Indonesia, including a discussion about a successful pilot test. As an emerging EOR technique, nanoflooding can be considered as a cost-efficient technique. Silica-based nanofluid can be accessed in a cost-efficient manner and can be executed from an implementation standpoint considering surface facilities. The mechanism that is introduced can help to displace incremental oil more effectively since it can go inside pore throats due to the nano-size. We observed several recognized benefits and challenges to deploy nanoflooding in Indonesia. Based on this study, nanoflooding is very attractive and has potential to be implemented.

scholarly journals Rethinking the Role of Lawyers for Children : Child Representation in Canadian Family Relationship Cases

2019 ◽  
Vol 59 (4) ◽  
pp. 787-829
Author(s):  
Nicholas Bala ◽  
Rachel Birnbaum
Keyword(s):  
Family Relationship ◽  
Older Children ◽  
Efficient Manner ◽  
Child Report ◽  
Significant Evidence ◽  
The Family ◽  
Justice Process ◽  
Cost Efficient ◽  
Comprehensive Programs

This article examines various methods for involving children in family and child welfare proceedings, surveys varying approaches in different Canadian jurisdictions to the appointment of counsel for children in these cases, and explores the controversies about the role of counsel for children. While child representation is becoming common, in most provinces it is usually limited to welfare proceedings involving older children. All jurisdictions, however, have some provisions to allow for child participation in family relationship cases. Governments and law societies in Canada should develop more coherent and comprehensive programs and policies to ensure that the views of children are considered in the family justice process in a child-focused and cost-efficient manner. There needs to be more recognition of the role of lawyers in facilitating settlement. Appointment of counsel is, however, not always the best way to involve children ; if the child is willing to share views, in some cases this may be better done by a judicial interview, a Views of the Child Report or an assessment. There should be a presumption that counsel will be an instructional advocate, but if a child lacks the capacity or willingness to instruct counsel, counsel should be an advocate for the rights and interests of the child. Regardless of the role adopted, counsel for a child also has responsibility for introducing significant evidence not otherwise before the court.

scholarly journals Effect of randomly distributed polypropylene fiber reinforcement on the shear behavior of sandy soil

2019 ◽  
Vol 41 (3) ◽  
pp. 151-159
Author(s):  
Mehdi Missoum Benziane ◽  
Noureddine Della ◽  
Sidali Denine ◽  
Sedat Sert ◽  
Said Nouri
Keyword(s):  
Sandy Soil ◽  
Mechanical Characteristics ◽  
Polypropylene Fiber ◽  
Fiber Content ◽  
Polypropylene Fibers ◽  
Normal Stresses ◽  
Efficient Manner ◽  
Cost Efficient ◽  
Shear Box ◽  
Loose Medium

AbstractThe inclusions of geosynthetic materials (fibers, geomembranes and geotextiles) is a new improvement technique that ensures uniformity in the soil during construction. The use of tension resisting discreet inclusions like polypropylene fibers has attracted a significant amount of attention these past years in the improvement of soil performance in a cost-efficient manner. A series of direct shear box tests were conducted on unreinforced and reinforced Chlef sand with different contents of fibers (0, 0.25, 0.5 and0.75%) in order to study the mechanical behavior of sand reinforced with polypropylene fibers. Samples were prepared at three different relative densities 30%, 50% and 80% representing loose, medium dense and dense states,respectively, and performed at normal stresses of 50, 100 and 200 kPa. The experimental results show that the mechanical characteristics are improved with the addition of polypropylene fibers. The inclusion of randomly distributed fibers has a significant effect on the shear strength and dilation of sandy soil. The increase in strength is a function of fiber content, where it has been shown that the mechanical characteristics improve with the increase in fiber content up to 0.75%, this improvement is more significant at a higher normal stress and relative density.

Via Cleaning Technology for Post Etch Residues

2005 ◽  
Vol 103-104 ◽  
pp. 357-360
Author(s):  
B.G. Sharma ◽  
Chris Prindle
Keyword(s):  
Semiconductor Industry ◽  
Dielectric Materials ◽  
Copper Interconnects ◽  
Limiting Factor ◽  
Device Performance ◽  
Semiconductor Technology ◽  
Widespread Acceptance ◽  
Cleaning Technology ◽  
Rc Delay ◽  
Low K

Interconnect RC delay is the limiting factor for device performance in submicron semiconductor technology. Copper and low-k dielectric materials can reduce this delay and have gained widespread acceptance in the semiconductor industry. The presence of copper interconnects provides unprecedented challenges for via cleaning technology and requires the development of novel process chemistries for improved device capability.

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