Impact of Bath Stability on Electroplated Cu for Through-Silicon-Vias (TSV) in a Controlled Manufacturing Environment

2014 ◽  
Vol 2014 (1) ◽  
pp. 000013-000018
Author(s):  
Anh Nguyen ◽  
Kevin Fealey ◽  
Peter Reilly ◽  
Gyanaranjan Pattanaik ◽  
Alison Gracias ◽  
...  
Keyword(s):  
New York ◽  
Focused Ion Beam ◽  
Secondary Ion Mass Spectrometry ◽  
Electron Backscatter Diffraction ◽  
Ion Beam ◽  
Chemical Mechanical Planarization ◽  
Manufacturing Environment ◽  
Cu Bonding ◽  
The Impact ◽  
Bath Stability

This study addresses the impact of bath stability on electroplated copper for through silicon via (TSV) in a controlled manufacturing environment. Microstructure, impurities and other properties of the copper produced were characterized using an array of techniques, including Electron Backscatter Diffraction Analysis (EBSD), Focused Ion Beam – Secondary Electron Microscope (FIB-SEM) and Time of Flight - Secondary Ion Mass Spectrometry (ToF-SIMS). Chemical analyses of the plating baths throughout their lives indicates that the process can be controlled. Overall, a manufacturing process was demonstrated that can create high quality TSV Cu fill interconnects for 3D IC over the life of the bath. The process has enabled further development work at State University of New York Polytechnic Institute (SUNY Poly) for downstream processes such as chemical mechanical planarization (CMP) and Cu-Cu bonding.

Impact of Bath Stability on Electroplated Cu for TSVs in a Controlled Environment

2015 ◽  
Vol 12 (1) ◽  
pp. 43-48 ◽  
Author(s):  
Anh Nguyen ◽  
Kevin Fealey ◽  
Peter Reilly ◽  
Gyanaranjan Pattanaik ◽  
Alison Gracias ◽  
...  
Keyword(s):  
New York ◽  
Focused Ion Beam ◽  
Secondary Ion Mass Spectrometry ◽  
Electron Backscatter Diffraction ◽  
Ion Beam ◽  
Chemical Mechanical Planarization ◽  
Cu Bonding ◽  
Electroplated Copper ◽  
The Impact ◽  
Bath Stability

This study addresses the impact of bath stability on electroplated copper for through-silicon via (TSV) in a controlled manufacturing environment. Microstructure, impurities, and other properties of the copper produced were characterized using an array of techniques, including electron backscatter diffraction analysis, focused ion beam–secondary electron microscope, and time of flight–secondary ion mass spectrometry. Chemical analyses of the plating baths throughout their lives indicates that the process can be controlled. Overall, a manufacturing process was demonstrated that can create high-quality, TSV Cu fill interconnects for 3-D IC over the life of the bath. The process has enabled further development work at State University of New York Polytechnic Institute for downstream processes such as chemical mechanical planarization and Cu-Cu bonding.

scholarly journals Artificial generation of representative single Li-ion electrode particle architectures from microscopy data

2021 ◽  
Vol 7 (1) ◽  
Author(s):  
Orkun Furat ◽  
Lukas Petrich ◽  
Donal P. Finegan ◽  
David Diercks ◽  
Francois Usseglio-Viretta ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Electron Backscatter Diffraction ◽  
Ion Beam ◽  
Lithium Ion ◽  
Scale Model ◽  
Multi Scale ◽  
Physics Modeling ◽  
Microscopy Data ◽  
Microscopy Techniques ◽  
Backscatter Diffraction

AbstractAccurately capturing the architecture of single lithium-ion electrode particles is necessary for understanding their performance limitations and degradation mechanisms through multi-physics modeling. Information is drawn from multimodal microscopy techniques to artificially generate LiNi0.5Mn0.3Co0.2O2 particles with full sub-particle grain detail. Statistical representations of particle architectures are derived from X-ray nano-computed tomography data supporting an ‘outer shell’ model, and sub-particle grain representations are derived from focused-ion beam electron backscatter diffraction data supporting a ‘grain’ model. A random field model used to characterize and generate the outer shells, and a random tessellation model used to characterize and generate grain architectures, are combined to form a multi-scale model for the generation of virtual electrode particles with full-grain detail. This work demonstrates the possibility of generating representative single electrode particle architectures for modeling and characterization that can guide synthesis approaches of particle architectures with enhanced performance.

scholarly journals Effect of Ion Irradiation on Nanoindentation Fracture and Deformation in Silicon Carbide

JOM ◽  
2021 ◽  
Author(s):  
Alexander J. Leide ◽  
Richard I. Todd ◽  
David E. J. Armstrong
Keyword(s):  
Mechanical Properties ◽  
Silicon Carbide ◽  
Residual Stresses ◽  
Focused Ion Beam ◽  
Electron Backscatter Diffraction ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Resolution Electron ◽  
Radiation Induced ◽  
Compressive Residual Stresses

AbstractSilicon carbide is desirable for many nuclear applications, making it necessary to understand how it deforms after irradiation. Ion implantation combined with nanoindentation is commonly used to measure radiation-induced changes to mechanical properties; hardness and modulus can be calculated from load–displacement curves, and fracture toughness can be estimated from surface crack lengths. Further insight into indentation deformation and fracture is required to understand the observed changes to mechanical properties caused by irradiation. This paper investigates indentation deformation using high-resolution electron backscatter diffraction (HR-EBSD) and Raman spectroscopy. Significant differences exist after irradiation: fracture is suppressed by swelling-induced compressive residual stresses, and the plastically deformed region extends further from the indentation. During focused ion beam cross-sectioning, indentation cracks grow, and residual stresses are modified. The results clarify the mechanisms responsible for the modification of apparent hardness and apparent indentation toughness values caused by the compressive residual stresses in ion-implanted specimens.

Investigation of Ga ion implantation-induced damage in single-crystal 6H-SiC

2018 ◽  
Vol 1 (2) ◽  
pp. 115-123 ◽  
Author(s):  
Zhongdu He ◽  
Zongwei Xu ◽  
Mathias Rommel ◽  
Boteng Yao ◽  
Tao Liu ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Focused Ion Beam ◽  
Electron Backscatter Diffraction ◽  
Ion Beam ◽  
Implantation Dose ◽  
Formation Mechanisms ◽  
Schematic Model ◽  
Dose Threshold ◽  
Before And After

In order to investigate the damage in single-crystal 6H-silicon carbide (SiC) in dependence on ion implantation dose, ion implantation experiments were performed using the focused ion beam technique. Raman spectroscopy and electron backscatter diffraction were used to characterize the 6H-SiC sample before and after ion implantation. Monte Carlo simulations were applied to verify the characterization results. Surface morphology of the implantation area was characterized by the scanning electron microscope (SEM) and atomic force microscope (AFM). The ‘swelling effect’ induced by the low-dose ion implantation of 1014−1015 ions cm−2 was investigated by AFM. The typical Raman bands of single-crystal 6H-SiC were analysed before and after implantation. The study revealed that the thickness of the amorphous damage layer was increased and then became saturated with increasing ion implantation dose. The critical dose threshold (2.81 × 1014−3.26 × 1014 ions cm−2) and saturated dose threshold (˜5.31 × 1016 ions cm−2) for amorphization were determined. Damage formation mechanisms were discussed, and a schematic model was proposed to explain the damage formation.

scholarly journals Thin Solid Film Electrolyte and Its Impact on Electrode Polarization in Solid Oxide Fuel Cells Studied by Three-Dimensional Microstructure-Scale Numerical Simulation

Energies ◽  
2020 ◽  
Vol 13 (19) ◽  
pp. 5127
Author(s):  
Tomasz A. Prokop ◽  
Grzegorz Brus ◽  
Shinji Kimijima ◽  
Janusz S. Szmyd
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Three Dimensional ◽  
Reaction Rates ◽  
Solid Oxide ◽  
Scale Model ◽  
Electrode Polarization ◽  
Computational Domain ◽  
Oxide Fuel ◽  
The Impact

In this work, a three-dimensional microstructure-scale model of a Solid Oxide Fuel Cell’s Positive-Electrolyte-Negative assembly is applied for the purpose of investigating the impact of decreasing the electrolyte thickness on the magnitude, and the composition of electrochemical losses generated within the cell. Focused-Ion-Beam Scanning Electron Microscopy reconstructions are used to construct a computational domain, in which charge transport equations are solved. Butler–Volmer model is used to compute local reaction rates, and empirical relationships are used to obtain local conductivities. The results point towards three-dimensional nature of transport phenomena in thin electrolytes, and electrode-electrolyte interfaces.

scholarly journals Laser-assisted atom probe tomography of semiconductors: The impact of the focused-ion beam specimen preparation

2018 ◽  
Vol 188 ◽  
pp. 19-23 ◽  
Author(s):  
J. Bogdanowicz ◽  
A. Kumar ◽  
C. Fleischmann ◽  
M. Gilbert ◽  
J. Houard ◽  
...  
Keyword(s):  
Atom Probe Tomography ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Atom Probe ◽  
Beam Specimen ◽  
Specimen Preparation ◽  
The Impact

3D-EBSD Studies of Deformation, Recrystallization and Phase Transformations

2012 ◽  
Vol 715-716 ◽  
pp. 41-50 ◽  
Author(s):  
Michael Ferry ◽  
Wan Qiang Xu ◽  
M. Zakaria Quadir ◽  
Nasima Afrin Zinnia ◽  
Kevin J. Laws ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Thermomechanical Processing ◽  
Electron Backscatter Diffraction ◽  
Ion Beam ◽  
Void Formation ◽  
Data Generation ◽  
Serial Sectioning ◽  
Resolution Electron ◽  
Plastic Forming ◽  
Backscatter Diffraction

A focused ion beam (FIB) coupled with high resolution electron backscatter diffraction (EBSD) has emerged as a useful tool for generating crystallographic information in reasonably large volumes of microstructure. In principle, data generation is reasonably straightforward whereby the FIB is used as a high precision serial sectioning device for generating consecutive milled surfaces suitable for mapping by EBSD. The successive EBSD maps generated by serial sectioning are combined using various post-processing methods to generate crystallographic volumes of the microstructure. This paper provides an overview of the use of 3D-EBSD in the study of various phenomena associated with thermomechanical processing of both crystalline and semi-crystalline alloys and includes investigations on the crystallographic nature of microbands, void formation at particles, phase redistribution during plastic forming, and nucleation of recrystallization within various regions of the deformation microstructure.

Microstructural Evolution of Al–Zn–Mg–Cu Alloys in Accordance with Homogenization Time

2020 ◽  
Vol 20 (11) ◽  
pp. 6890-6896
Author(s):  
Woojin An ◽  
Jaewon Heo ◽  
Dongchan Jang ◽  
Kwang Jun Euh ◽  
Im Doo Jung ◽  
...  
Keyword(s):  
Microstructural Evolution ◽  
Focused Ion Beam ◽  
Volume Fraction ◽  
Electron Backscatter Diffraction ◽  
Ion Beam ◽  
Homogenization Temperature ◽  
Strain Burst ◽  
Cu Alloys ◽  
Homogenization Time ◽  
Backscatter Diffraction

The microstructural evolution of Al–Zn–Mg–Cu alloys has been investigated for the homogenization time effect on the texture, grain orientation and dislocation density. The Al–Zn–Mg–Cu alloys were casted and homogenized for 4, 8, 16 and 24 hours. Electron backscatter diffraction (EBSD) analysis was conducted to characterize the microstructural behavior. Micropillars were fabricated using focused ion beam (FIB) milling in grains of specific crystallographic orientations. Coarse precipitations in the grain boundaries are S (Al2CuMg) and T (Al2Mg3Zn3) phases verified by scanning electron microscopy-energy dispersive spectroscopy (SEM-EDS) observation. With increasing homogenization time, equiaxed cell sizes increased. The volume fraction of S and T phases decreased with the diffusion of atomic elements into matrix. The Vickers hardness and tensile strength values decreased with homogenization temperature. The micropillar compression analysis was compared to macro tensile test results to understand the size effect and strain burst phenomenon on the mechanical properties of Al–Zn–Mg–Cu alloys.

The Application of 3D-EBSD for Investigating Texture Development in Metals and Alloys

2011 ◽  
Vol 702-703 ◽  
pp. 469-474
Author(s):  
Michael Ferry ◽  
M. Zakaria Quadir ◽  
Nasima Afrin Zinnia ◽  
Lori Bassman ◽  
Cassandra George ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Electron Backscatter Diffraction ◽  
Ion Beam ◽  
Low Carbon Steel ◽  
Texture Development ◽  
Data Generation ◽  
Low Carbon ◽  
Resolution Electron ◽  
Multi Phase ◽  
Backscatter Diffraction

A focused ion beam (FIB) coupled with high resolution electron backscatter diffraction (EBSD) has emerged as a useful tool for generating crystallographic information in reasonably large volumes of microstructure. In principle, data generation is reasonably straightforward whereby the FIB is used as a high precision serial sectioning device for generating consecutive milled surfaces suitable for mapping by EBSD. However, there are several challenges facing the technique including the need for accurate reconstruction of the EBSD slice data and the development of methods for representing the myriad microstructural features of interest including, for example, orientation gradients arising from plastic deformation through to the structure of grains and their interfaces in both single-phase and multi-phase materials. This paper provides an overview of the use of 3D-EBSD in the study of texture development in alloys during deformation and annealing and includes an update on current research on the crystallographic nature of microbands in some body centred and face centred cubic alloys and the nucleation and growth of grains in an extra low carbon steel.

Influence of Domain Structure on Magnetoresistance in Perovskite Manganite Grain Boundary Junctions

2001 ◽  
Vol 674 ◽  
Author(s):  
Robert Gunnarsson ◽  
Anatoli Kadigrobov ◽  
Zdravko Ivanov
Keyword(s):  
Grain Boundary ◽  
Temperature Dependence ◽  
Focused Ion Beam ◽  
Domain Walls ◽  
Ion Beam ◽  
Perovskite Manganite ◽  
Current Voltage ◽  
Single Grain ◽  
Current Voltage Characteristics ◽  
The Impact

ABSTRACTWe have been able to deduce a temperature dependence of the built-in potential in La2/3Sr1/3MnO3 grain boundary junctions. This has been performed by trimming a single grain boundary down to 1μm width with a focused ion-beam. We can thereby see the impact of single domain walls on the magnetoresistance and the current-voltage characteristics. We have also demonstrated the effect of averaging as we increased the number of junctions.

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