Room-temperature bonding of GaAs//Si and GaN//GaAs wafers with low electrical resistance

2018 ◽  
Vol 11 (10) ◽  
pp. 106501 ◽  
Author(s):  
Yoshiaki Ajima ◽  
Yuki Nakamura ◽  
Kenta Murakami ◽  
Hideo Teramoto ◽  
Ryota Jomen ◽  
...  
2000 ◽  
Vol 622 ◽  
Author(s):  
Liang-Yu Chen ◽  
Gary W. Hunter ◽  
Philip G. Neudeck

ABSTRACTSingle crystal silicon carbide (SiC) has such excellent physical, chemical, and electronic properties that SiC based semiconductor electronics can operate at temperatures in excess of 600°C well beyond the high temperature limit for Si based semiconductor devices. SiC semiconductor devices have been demonstrated to be operable at temperatures as high as 600°C, but only in a probe-station environment partially because suitable packaging technology for high temperature (500°C and beyond) devices is still in development. One of the core technologies necessary for high temperature electronic packaging is semiconductor die-attach with low and stable electrical resistance. This paper discusses a low resistance die-attach method and the results of testing carried out at both room temperature and 500°C in air. A 1 mm2 SiC Schottky diode die was attached to aluminum nitride (AlN) and 96% pure alumina ceramic substrates using precious metal based thick-film material. The attached test die using this scheme survived both electronically and mechanically performance and stability tests at 500°C in oxidizing environment of air for 550 hours. The upper limit of electrical resistance of the die-attach interface estimated by forward I-V curves of an attached diode before and during heat treatment indicated stable and low attach-resistance at both room-temperature and 500°C over the entire 550 hours test period. The future durability tests are also discussed.


2015 ◽  
Vol 1117 ◽  
pp. 52-55
Author(s):  
Artis Linarts ◽  
Maris Knite

Polymer conductive filler composites are believed to be promising materials for flexible force sensor manufacture. Polyisoprene various carbon allotrope hybrid composites were made and their piezoresistive properties depending on the two type’s filler concentration and their ratio have been determined. Electrical resistance relaxations of hybrid composites at constant pressure in room temperature were determined as well. Experimental data of resistance relaxation was analyzed and fitted similarly to stress relaxation of polymers at constant pressure.


1908 ◽  
Vol 28 ◽  
pp. 615-626
Author(s):  
James G. Gray ◽  
Alexander D. Ross

SUMMARY1. Nickel and the Heusler alloy give “sensitive states” of nearly 2 and about 5 per cent. respectively for a magnetising field of 8 C.G.S. units.2. Steel wire specimens dropped vertically on a stone slab from a height of 1 metre showed a reduction of 37 per cent, in the “sensitive state” for a single fall, 49 per cent, for three falls, 62 per cent, for ten falls, and 73 per cent, for fifty falls.3. After the “sensitive state” has been removed from a specimen by the process of demagnetising by reversals, it cannot be completely restored by reannealing. That is, the specimens exhibit a fatigue effect.4. In the case of one variety of steel, the “sensitive state” had been reduced to less than one-half its original value after seven annealings, and to one-fifth after seventeen.5. No recovery from the fatigue condition was observed in specimens which had been laid aside for fifty-four days.6. Repeated annealings without intermediate magnetic testing showed neither an augmentation of the “sensitive state” nor a fatigue effect.7. Specimens demagnetised at −190° C., heated to room temperature, and cooled again to −190° C., showed a small “sensitive state” at that temperature.8. Larger effects were induced by heating from −190° C. to 15° C., or by cooling from 15° C. to −190° C.9. A “sensitive state” could be induced by any variation of temperature, but not by exposure to a steady temperature, either high or low. The effect is associated solely with change of temperature.10. The amount of “sensitive state” induced by equal temperature alterations varies with the position of the range on the temperature scale and with the material.11. The change from the “sensitive” to the normal condition is unaccompanied by any appreciable change in the specific electrical resistance or elastic constants of the material.


2009 ◽  
Vol 1204 ◽  
Author(s):  
Letian Lin ◽  
Lu-Chang Qin ◽  
Sean Washburn ◽  
Scott Paulson

AbstractThe properties of a carbon nanotube (CNT), in particular a single-wall carbon nanotube (SWNT), are highly sensitive to the atomic structure of the nanotube described by its chirality (chiral indices). We have grown isolated SWNTs on a silicon substrate using chemical vapor deposition (CVD) and patterned sub-micron probes using electron beam lithography. The SWNT was exposed by etching the underlying substrate for transmission electron microscope (TEM) imaging and diffraction studies. For each individual SWNT, its electrical resistance was measured by the four-probe method at room temperature and the chiral indices of the same SWNT were determined by nano-beam electron diffraction. The contact resistances were reduced by annealing to typically 3-5 kΩ. We have measured the I-V curve and determined the chiral indices of each nanotube individually from four SWNTs selected randomly – two are metallic and two are semiconducting. We will present the electrical resistances in correlation with the carbon nanotube diameter as well as the band gap calculated from the determined chiral indices for the semiconducting carbon nanotubes. These experimental results are also discussed in connection with theoretical estimations.


2004 ◽  
Vol 835 ◽  
Author(s):  
Oomman K. Varghese ◽  
Gopal K. Mor ◽  
Maggie Paulose ◽  
Craig A. Grimes

ABSTRACTA tremendous variation in electrical resistance, from the semiconductor to metallic range, has been observed in titania nanotube arrays at room temperature, ≈25°C, in the presence of low ppm hydrogen gas concentrations (≤ 1000 ppm). The nanotube arrays are fabricated by anodizing titanium foil in an aqueous fluoride containing electrolyte solution. Subsequently, the arrays are annealed in an oxygen ambient, then coated with a 10 nm layer of palladium by evaporation. Electrical contacts are made by sputtering a small (e.g. 1 mm diameter) platinum disk atop the Pd coated nanotube-array. These sensors exhibit a resistance variation of the order of over 107 (1,000,000,000%) in the presence of 1000 ppm hydrogen at 23°C. To the best of our knowledge this dynamic change in electrical resistance the largest known response of any material, to any gas, at any temperature. The sensors demonstrate complete reversibility, repeatability, high selectivity, no drift and wide dynamic range. The nanoscale geometry of the nanotubes, in particular the points of tube-to-tube contact, is believed to be responsible for the outstanding hydrogen gas sensitivities.


1958 ◽  
Vol 36 (7) ◽  
pp. 875-883 ◽  
Author(s):  
G. K. White ◽  
S. B. Woods

Experimental values are reported for the electrical resistivity of ruthenium and osmium from 2 to 300 °K and for the thermal resistivity from 2 to 140° K. The samples were produced by arc-melting pressed pellets of metallic powder in an inert gas atmosphere. Two osmium samples and one ruthenium sample showed a satisfactorily low residual electrical resistance. By grinding these rods to a regular shape, absolute values of resistivity were obtained and the impurity and thermal components of resistivity derived; at room temperature (295 °K) we deduce that for ideally pure Os, [Formula: see text] and for ideally pure ruthenium [Formula: see text]. The temperature dependence of the resistivity was markedly different for another ruthenium sample but it seems likely that this was not representative of pure h.c.p. ruthenium.


2014 ◽  
Vol 605 ◽  
pp. 290-294
Author(s):  
Hyun Sung Jung ◽  
Chang Yeoul Kim ◽  
Nosang V. Myung

We investigated sensing properties on NOx (g) of single tellurium (Te) nanoribbon-based nanodevices. The synthesized Te nanoribbons were aligned at well-defined locations using a lithographically patterned nanowire electrodeposition (LPNE) technique. The shape and length were feasibly modified by the designed lithographical pattern, and the width was tailored by the applied electrochemical parameters. Temperature-dependent electrical resistance was analyzed with as-synthesized and annealed Te nanoribbons in the temperature ranging from 15 K to 300 K, where the calculated thermal activation energies of as-synthesized and annealed Te nanoribbons were 35.7 meV and 19.2 meV, respectively. Room-temperature sensor performance of as-synthesized and annealed single Te nanoribbons on detecting NOx (g) was investigated as a function of the tailored concentration of NOx (g). Compared to a sensitivity of 16±2.9% on detecting NOx (g) of 10 ppm in the as-synthesized single Te nanoribbon sensor aligned between Au/Cr electrodes, the sensitivity of 21±3.2% on detecting NOx (g) of 10 ppm at room temperature was demonstrated by single Te nanoribbon-based sensor annealed at 200oC for 1 hour in 5 % H2/N2 (g). The effects of annealing on sensing properties have demonstrated the improved sensitivity in the annealed Te nanoribbons..


Materials ◽  
2018 ◽  
Vol 11 (9) ◽  
pp. 1498 ◽  
Author(s):  
Jie Zhou ◽  
Fang Ye ◽  
Xuefeng Cui ◽  
Laifei Cheng ◽  
Jianping Li ◽  
...  

The mechanical and dielectric properties of two types of amorphous silicon nitride (Si3N4) fibers prior to and following annealing at 800 °C were studied. The tensile strengths of the Si3N4 fiber bundles were measured using unidirectional tensile experimentation at room temperature, whereas the permittivity values were measured at 8.2–12.4 GHz using the waveguide method. The results demonstrated that the tensile strength and dielectric properties of Si3N4 fibers were correlated to the corresponding composition, microstructure, and intrinsic performance of electrical resistance. The Si3N4 fibers with a lower content of amorphous SiNxOy presented an improved thermal stability, a higher tensile strength, a higher conductivity, and a significantly stable wave-transparent property. These were mainly attributed to the highly pure composition and decomposition of less amorphous SiNxOy.


RSC Advances ◽  
2020 ◽  
Vol 10 (56) ◽  
pp. 33770-33781
Author(s):  
Satyendra Singh ◽  
Archana Singh ◽  
Ajendra Singh ◽  
Sanjeev Rathore ◽  
B. C. Yadav ◽  
...  

Modulation in electrical resistance of the sensing layer due to interaction (adsorption and reactions) with LPG.


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