Planer Diamond P-channel MOSFETs with Breakdown Voltage VB > 1.8kV and High Drain Current Density by 2DHG

. Silicon carbide (SiC) SITs were fabricated using home-grown epi structures. The gate is a recessed gate - bottom contact (RG - B). We designed that the mesa space 2.7μm and the gate channel is 1.2μm. One cell has 400 source fingers and each source finger width is 100μm. 1mm SiC SIT yielded a current density of 123mA/mm of drain current at a drain voltage of 20V. A maximum current density of 150 mA/mm was achieved with Vd=40V. The device blocking voltage with a gate bias of-16 V was 200 V. Packaged 24-cm devices were evaluated using amplifier circuits designed for class AB operations. A total power output in excess of 213 W was obtained with a power density of 8.5 W/cm and gain of 8.5 dB at 500 MHz under pulse operation.

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AlGaN Channel HEMT with Extremely High Breakdown Voltage

MRS Proceedings ◽

10.1557/opl.2011.1056 ◽

2011 ◽

Vol 1324 ◽

Cited By ~ 1

Author(s):

Takuma Nanjo ◽

Misaichi Takeuchi ◽

Akifumi Imai ◽

Yousuke Suzuki ◽

Muneyoshi Suita ◽

...

Keyword(s):

Breakdown Voltage ◽

Drain Current ◽

High Electron Mobility Transistors ◽

Low Noise ◽

Low Noise Amplifiers ◽

High Electron ◽

Field Plate ◽

Electron Mobility Transistors ◽

Doping Technique ◽

Resistive Source

ABSTRACTA channel layer substitution of a wider bandgap AlGaN for a conventional GaN in high electron mobility transistors (HEMTs) is an effective method of enhancing the breakdown voltage. Wider bandgap AlGaN, however, should also increase the ohmic contact resistance. Si ion implantation doping technique was utilized to achieve sufficiently low resistive source/drain contacts. The fabricated AlGaN channel HEMTs with the field plate structure demonstrated good pinch-off operation with sufficiently high drain current density of 0.5 A/mm without noticeable current collapse. The obtained maximum breakdown voltages was 1700 V in the AlGaN channel HEMT with the gate-drain distance of 10 μm. These remarkable results indicate that AlGaN channel HEMTs could become future strong candidates for not only high-frequency devices such as low noise amplifiers but also high-power devices such as switching applications.

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An Improved UU-MESFET with High Power Added Efficiency

Micromachines ◽

10.3390/mi9110573 ◽

2018 ◽

Vol 9 (11) ◽

pp. 573 ◽

Cited By ~ 6

Author(s):

Hujun Jia ◽

Mei Hu ◽

Shunwei Zhu

Keyword(s):

Breakdown Voltage ◽

Threshold Voltage ◽

High Power ◽

Field Effect ◽

Field Effect Transistor ◽

Drain Current ◽

Power Added Efficiency ◽

Effect Transistor ◽

The Relationship

An improved ultrahigh upper gate 4H-SiC metal semiconductor field effect transistor (IUU-MESFET) is proposed in this paper. The structure is obtained by modifying the ultrahigh upper gate height h of the ultrahigh upper gate 4H-SiC metal semiconductor field effect transistor (UU-MESFET) structure, and the h is 0.1 μm and 0.2 μm for the IUU-MESFET and UU-MESFET, respectively. Compared with the UU-MESFET, the IUU-MESFET structure has a greater threshold voltage and trans-conductance, and smaller breakdown voltage and saturation drain current, and when the ultrahigh upper gate height h is 0.1 μm, the relationship between these parameters is balanced, so as to solve the contradictory relationship that these parameters cannot be improved simultaneously. Therefore, the power added efficiency (PAE) of the IUU-MESFET structure is increased from 60.16% to 70.99% compared with the UU-MESFET, and advanced by 18%.

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60 GHz Double Deck T-Gate AlN/GaN/AlGaN HEMT for V-Band Satellites

10.21203/rs.3.rs-627623/v1 ◽

2021 ◽

Author(s):

A.S. Augustine Fletcher ◽

D Nirmal ◽

J Ajayan ◽

L Arivazhagan ◽

Husna Hamza K ◽

...

Keyword(s):

Electric Field ◽

Breakdown Voltage ◽

Figure Of Merit ◽

Drain Current ◽

60 Ghz ◽

Mechanical Reliability ◽

Gan Hemt ◽

V Band ◽

Silicon Carbide Substrate ◽

Gate Edge

Abstract The influence of double deck T-gate on LG=0.2 μm AlN/GaN/AlGaN HEMT is analysed in this paper. The T-gate supported with Silicon Nitride provides a tremendous mechanical reliability. It drops off the crest electric-field at gate edges and postponing the breakdown voltage of a device. A 0.2-μm double deck T-gate HEMT on Silicon Carbide substrate offer fMAX of 107 Giga Hertz, fT of 60 Giga Hertz and the breakdown voltage of 136 Volts. Furthermore, it produces the maximum-transconductance and drain-current of 0.187 Siemens/mm and 0.41 Ampere/mm respectively. In addition, the lateral electric-field noticed at gate-edge shows 2.1×106 Volts/cm. Besides, the double deck T-gate AlN/GaN HEMT achieves a 45 % increment in breakdown voltage compared to traditional GaN-HEMT device. Moreover, it reveals a remarkable Johnson figure-of-merit of 7.9 Tera Hertz Volt. Therefore, the double deck T-gate on AlN/GaN/AlGaN HEMT is the superlative device for 60 GHz V-band satellite application.

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High drain-current-density and high breakdown-field Al0.36Ga0.64N-channel heterojunction filed-effect transistors with a dual AlN/AlGaInN barrier layer

Japanese Journal of Applied Physics ◽

10.35848/1347-4065/ac4b09 ◽

2022 ◽

Author(s):

Akiyoshi Inoue ◽

Sakura Tanaka ◽

Takashi Egawa ◽

Makoto Miyoshi

Keyword(s):

Current Density ◽

Barrier Layer ◽

Ohmic Contacts ◽

Field Effect Transistors ◽

Drain Current ◽

Device Fabrication ◽

Breakdown Field ◽

Field Plate ◽

Order Of Magnitude ◽

State Breakdown

Abstract In this study, we fabricated and characterized heterojunction field-effect transistors (HFETs) based on an Al0.36Ga0.64N-channel heterostructure with a dual AlN/AlGaInN barrier layer. The device fabrication was accomplished by adopting a regrown n++-GaN layer for ohmic contacts. The fabricated HFETs with a gate length of 2 μm and a gate-to-drain distance of 6 μm exhibited an on-state drain current density as high as approximately 270 mA/mm and an off-state breakdown voltage of approximately 1 kV, which corresponds to an off-state critical electric field of 166 V/μm. This breakdown field, as a comparison in devices without field-plate electrodes, reaches approximately four-fold higher than that for conventional GaN-channel HFETs and was considered quite reasonable as an Al0.36Ga0.64N-channel transistor. It was also confirmed that the devices adopting the dual AlN/AlGaInN barrier layer showed approximately one order of magnitude smaller gate leakage currents than those for devices without the top AlN barrier layer.

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The Effect of Channel Recess and Passivation on 4H-SiC MESFETs

MRS Proceedings ◽

10.1557/proc-742-k5.19 ◽

2002 ◽

Vol 742 ◽

Cited By ~ 1

Author(s):

Ho-Young Cha ◽

Christopher I. Thomas ◽

Goutam Koley ◽

Lester F. Eastman ◽

Michael G. Spencer

Keyword(s):

Breakdown Voltage ◽

Drain Current ◽

Surface Effects ◽

Gate Length ◽

Small Signal ◽

Saturation Current ◽

Power Performance ◽

Dc Characteristics ◽

Signal Characteristics ◽

Lower Saturation

ABSTRACTChannel-recessed 4H-SiC MESFETs were fabricated and demonstrated excellent small signal characteristics. A saturated current of 250 − 270 mA/mm at Vgs = 0 V and a maximum transconductance of 40 − 45 mS/mm were measured for channel-recessed devices with a gate length of 0.45 m. The three-terminal breakdown voltages (Vds) range from 120 V to 150 V. The Ft and Fmax of the 2 × 200 m devices were measured to be 14.5 GHz and 40 GHz, respectively. The channel recess technique results in a lower saturation current but higher breakdown voltage which makes it possible for the devices to operate at high voltages. Si3N4 passivation suppresses the instability in DC characteristics and improves CW power performance by reducing the surface effects. Less dispersion in the drain current during a power sweep was observed after passivation.

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Comparative Study of SiC MOSFETs in High Voltage Switching Operation

Materials Science Forum ◽

10.4028/www.scientific.net/msf.717-720.1081 ◽

2012 ◽

Vol 717-720 ◽

pp. 1081-1084 ◽

Cited By ~ 1

Author(s):

Tsuyoshi Funaki ◽

Yuki Nakano ◽

Takashi Nakamura

Keyword(s):

Breakdown Voltage ◽

High Voltage ◽

Current Density ◽

Power Device ◽

Resistive Load ◽

Density Condition ◽

Switching Speed ◽

Switching Operation ◽

Switching Performance ◽

Turn On

SiC power device is expected to have high breakdown voltage with low on resistance, which cannot be attainable for conventional Si device. This study evaluates the switching performance of high voltage SiC MOSFETs with comparing to that of conventional Si power MOSFET having equivalent breakdown voltage. To this end, turn-on and turn-off switching operation of MOSFETs are assessed with resistive load for same conduction current density. Though the on resistance of SiC MOSFETs are quite lower than Si MOSFET, especially for trench gate type. But, SiC MOSFETs have larger terminal capacitance. Therefore, SiC MOSFETs show slower switching speed than Si MOSFETs for same current density condition.

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