scholarly journals Mitigating Wafer Edge Cut Defect through Tensionless Tape Lamination Technique

Author(s):  
Bryan Christian S. Bacquian ◽  
Frederick Ray I. Gomez

Thinner and smaller packages require thinner vertical structure of the integrated circuit (IC) design with the wafer playing essential role in package thinning. As the wafer goes thinner, problems may occur in the pre-assembly or wafer preparation. With the introduction of new pre-assembly technology such as laser die attach film (DAF) cut and dicing before grinding, technical challenges were expected. The paper focused on eliminating the edge cutting issue by considering the appropriate taping lamination technique. Tensionless lamination helped eliminate the horizontal pressure applied into the tape thus mitigating the edge cutting problem.  For future works, the configuration shared in this paper could be applied on wafers with comparable technology.

Author(s):  
Bryan Christian Bacquian ◽  
Frederick Ray Gomez

The continuing growth and development on semiconductor package miniaturization have become a particular interest and focus semiconductor industry. The importance of thinner packages also demands a thinner vertical structure of the integrated circuit (IC) design with silicon die or the wafer playing essential role in package thinning. As the wafer goes thinner, problems may occur in the wafer preparation or pre-assembly. With the introduction of new wafer preparation technologies such as dicing before grinding and laser die attach film (DAF) cut, technical challenges were inevitable. The paper focused on the effect of backgrinding tape lamination on die alignment. Tensionless lamination helped eliminate the horizontal pressure applied into the tape thus mitigating the die mis-alignment problem.  For future works, the configuration could be applied on wafers with similar technology and/or application.


Author(s):  
Bryan Christian S. Bacquian ◽  
Frederick Ray I. Gomez

The development on thinner packages has become the trend and focus in semiconductor packaging industry. The necessity of thinner packages also entails a thinner vertical structure of the integrated circuit (IC) design. As a major contributor on the vertical structure of the IC package, die or wafer is also essential to go thinner. As the wafer goes thinner, various problems may occur during transport and even the back grinding process, itself. Wafer warpage is one of the main concerns during the process. The effect of proper vacuuming will play major role in processing SOI wafers. Insufficient vacuum may cause non-planar wafer in contact with the chuck table that may result to poorer grinding and worst broken wafer.  Different silicon wafer technology has been released to cater different functionality on different industry markets. One popular silicon technology is Silicon On Insulator (SOI) technology. SOI wafers have a step type passivation wherein the edge of the wafer is observed to have 30um thinner than its center. The stepping effect also contributes to the 0.5mm wafer warpage prior back grinding. Evaluating the effect of vacuum efficiency to eliminate such warpage is discussed on this technical paper.


Author(s):  
Bryan Christian S. Bacquian ◽  
Frederick Ray I. Gomez

The continuous development and trends on thinner semiconductor packages have become the focus in the semiconductor industry. The necessity of thinner packages also demands a thinner vertical structure of the integrated circuit (IC) design. As a major contributor on the vertical structure of the IC package, die or wafer is also essential to go thinner. As the wafer goes thinner, various problems may occur during transport and even the backgrinding process, itself. Wafer warpage is one of the main concerns during the backgrinding process. Wafer warpage varies depending on the wafer backgrinding stress and backgrinding tape (hereinafter referred to as BG tape) tension. Hence, tension between the surface protective tape and the wafer should be considered an important and critical item to consider during BG tape selection. Different silicon wafer technology has been released to cater different functionality on different industry markets. One popular silicon technology is Silicon On Insulator (SOI) technology. SOI wafers have a step type passivation wherein the edge of the wafer is observed to have 30um thinner than its center. The stepping effect also contributes to the 0.5mm wafer warpage prior backgrinding. Evaluating the effect of BG tape selection to eliminate such warpage is discussed on this paper.


Author(s):  
H.H. Yap ◽  
P.K. Tan ◽  
G.R. Low ◽  
M.K. Dawood ◽  
H. Feng ◽  
...  

Abstract With technology scaling of semiconductor devices and further growth of the integrated circuit (IC) design and function complexity, it is necessary to increase the number of transistors in IC’s chip, layer stacks, and process steps. The last few metal layers of Back End Of Line (BEOL) are usually very thick metal lines (>4μm thickness) and protected with hard Silicon Dioxide (SiO2) material that is formed from (TetraEthyl OrthoSilicate) TEOS as Inter-Metal Dielectric (IMD). In order to perform physical failure analysis (PFA) on the logic or memory, the top thick metal layers must be removed. It is time-consuming to deprocess those thick metal and IMD layers using conventional PFA workflows. In this paper, the Fast Laser Deprocessing Technique (FLDT) is proposed to remove the BEOL thick and stubborn metal layers for memory PFA. The proposed FLDT is a cost-effective and quick way to deprocess a sample for defect identification in PFA.


Author(s):  
Rafael Vargas-Bernal

Electrical interconnects are essential elements to transmit electrical current and/or to apply electrical voltage to the electronic devices found in an integrated circuit. With the introduction of carbon nanotubes in electronic applications, efficient and high-speed interconnects have allowed for optimizing the electrical performance of the integrated circuits. Additionally, technical problems, such as electromigration, large values of parasitic elements, large delays, and high thermal dissipation, presented in metallic interconnects based on copper, can be avoided. This chapter presents a performance analysis of interconnects used in AMS/RF IC design based on carbon nanotubes as the physical material where electrical variables are provided.


2013 ◽  
Vol 2013 (1) ◽  
pp. 000152-000157
Author(s):  
Susie Johansson ◽  
John Dzarnoski

Miniaturization of everyday products has been driving sales for some time and continues to fuel the consumer market. Everyone expects size reduction with each new product generation [1], [2]. Almost everything has electronics inside that must get smaller. There is no market demanding smaller devices that are faster, more capable, more feature-rich than that of the hearing aid industry. While radios, Bluetooth wireless systems and other accessories are added to hearing instruments feature lists, the consumer nonetheless continues to wish for them to be even smaller. Advancements in circuit fabrication, component shrinkage and die consolidation have aided the industry in satisfying this need. However, as this demand continues and even intensifies, current surface mount device assembly materials are becoming inadequate and the limiting factor for overall circuit size reduction; specifically, the die attachment, protection and reinforcement process is limiting how small hearing aid circuits can be. For hearing aids, the addition of more features and connection to more accessories each require a number of integrated circuits and associated passives attached to a flexible circuit. These circuits are invariably bent and twisted during assembly, up to 180°, requiring the integrated circuit solder joints to be reinforced by underfilling to prevent detachment. Unfortunately, the underfilling process is time-consuming and the capillary action necessary for its success is finicky. Even more unfavorably, a designated “keep out” area for other components must surround the die to be underfilled to allow for the dispensing equipment to access the die, reducing the useable board space and limiting the overall possibility of circuit size reduction. Additionally, the underfill material must stay away from circuit board edges and areas to be bent during final assembly. In an attempt to increase useable circuit board space, decrease overall circuit board size, and reduce assembly steps, the application of two epoxy flux materials for die attach fluxing and underfilling of hearing aids was evaluated. Epoxy flux is a relatively new material, which combines the functionality of flux and underfill into a single step. Epoxy flux's application, while eliminating steps, would more significantly eliminate the necessary “keep out” areas around die and allow for more densely placed surface mount components. The epoxy flux materials were applied by both printing and dipping, and then evaluated using x-ray imaging, scanning acoustic microscope imaging, die peel testing, multiple reflow integrity testing and die shear testing.


Electronics ◽  
2019 ◽  
Vol 8 (9) ◽  
pp. 1010 ◽  
Author(s):  
Khaoula Ait Belaid ◽  
Hassan Belahrach ◽  
Hassan Ayad

Typical 3D integrated circuit structures based on through-silicon vias (TSVs) are complicated to study and analyze. Therefore, it seems important to find some methods to investigate them. In this paper, a method is proposed to model and compute the time-domain coupling noise in 3D Integrated Circuit (3D-IC) based on TSVs. It is based on the numerical inversion Laplace transform (NILT) method and the chain matrices. The method is validated using some experimental results and the Pspice and Matlab tools. The results confirm the effectiveness of the proposed technique and the noise is analyzed in several cases. It is found that TSV noise coupling is affected by different factors such as source characteristics, horizontal interconnections, and the type of Inputs and Outputs (I/O) drivers.


2008 ◽  
Vol 17 (01) ◽  
pp. 141-167 ◽  
Author(s):  
KIAT-SENG YEO ◽  
ZHI-HUI KONG ◽  
NUKALA NISHANT ◽  
HAITAO FU ◽  
WEI ZENG

The proliferation of integrated circuits (ICs) in the present technological era has brought forth revolutionary digital modernization that has ultimately transformed the history and lifestyle of humankind. ICs have become the heart of practically all state-of-the-art electronic devices such as computers, cell phones, video game consoles, and cameras. This ever-flourishing IC design industry is knowledge-intensive, which in turn translates into a huge appetite for technically precocious talents. Hence, in an effort to fuel and further foster the industry with more highly skilled manpower and at the same time to vie for a share of the burgeoning industry, higher educational institutions and universities from all around the globe are placing greater than ever emphasis on IC design research. Most importantly, strenuous efforts in a holistic manner are being made by each university in order to elicit outstanding and top-notch research in IC design. The authors have conducted a detailed and extensive survey to rank the various universities of the world in the field of IC design based on their research performance. In fact, assessments in the form of ranking have gained prominence over the recent years captivating the attention of a large number of students and universities. It helps the students in knowing how each university is progressing in a particular field and in turn helps the universities in analyzing their positions globally to remain competitive. Three ranking indicators, namely the Number of Publications, Citation Counts, and Cites per Paper have been chosen. The methodology used in ranking is also reported. The universities occupying the top echelons in IC design research are identified and a proven three-pronged approach for eliciting outstanding research performance is discussed.


2013 ◽  
Vol 787 ◽  
pp. 855-860
Author(s):  
Hong Fa Ho

Finding bugs in CMOS Integrated Circuit (IC) layouts is a basic skill for IC design engineers and students alike. The reading process of finding bugs is the basis for learning and teaching in electronic engineering. In this pilot study, eye-movement data was used in analyzing the reading process and nature of five participants (N=5) finding bugs in CMOS layouts. Data analysis of eye movements was based on nine types of ROI (Region of Interest). The ANOVA analysis of eye movements was analyzed. The findings of experimental results included that there were significant differences among the number of fixations of nine types of ROIs. The findings suggest how learners could read the bugged IC layouts effectively and efficiently.


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