On-Chip Thermal Management and Hot-Spot Remediation

Author(s):  
Avram Bar-Cohen ◽  
Peng Wang
Keyword(s):  
Hot Spot ◽  

Author(s):  
Peng Wang ◽  
Avram Bar-Cohen

Thermal management of on-chip hot spots has become an increasing challenge in recent years because such localized high flux hot spots can not be effectively removed by conventional cooling techniques. The authors have recently explored the novel use of the silicon chip itself as a solid state thermoelectric micrcooler (μTEC) for hot spot thermal management. This paper describes the development and application of a thermo-electric design tool based on closed-form equations for the primary variables. This tool can be used to effectively reduce the complexity and required time for the design and optimization of the silicon microcooler geometry and material properties for on-chip hot spot remediation.



2013 ◽  
Vol 380-384 ◽  
pp. 2986-2989
Author(s):  
Xin Li ◽  
Meng Tian Rong

On-chip thermal sensors are employed by dynamic thermal management techniques to measure runtime thermal behavior of microprocessors so as to prevent the on-set of high temperatures. The allocation and the placement of thermal sensors directly impact the effectiveness of the dynamic thermal management mechanisms. In this paper, we propose systematic and effective strategies for determining the optimal locations for temperature sensors based on thermal gradient analysis to provide the trade-off between hot spot estimation and full thermal reconstruction. Experimental results indicate the superiority of our techniques and confirm that our proposed methods are able to create a sensor distribution for a given microprocessor architecture.



Author(s):  
Avram Bar-Cohen ◽  
Peng Wang

The rapid emergence of nanoelectronics, with the consequent rise in transistor density and switching speed, has led to a steep increase in microprocessor chip heat flux and growing concern over the emergence of on-chip “hot spots”. The application of on-chip high heat flux cooling techniques is today a primary driver for innovation in the electronics industry. In this paper, the physical phenomena underpinning the most promising on-chip thermal management approaches for hot spot remediation, along with basic modeling equations and typical results are described. Attention is devoted to thermoelectric microcoolers — using mini-contcat enhancement and in-plane thermoelectric currents, orthotropic TIM’s/heat spreaders, and phase-change microgap coolers.



Author(s):  
Avram Bar-Cohen ◽  
Peng Wang
Keyword(s):  
Hot Spot ◽  


Author(s):  
Viatcheslav Litvinovitch ◽  
Avram Bar-Cohen

Shrinking feature size and increasing transistor density, combined with the high performance demanded from next-generation microprocessors and other electronic components, have lead to the emergence of severe on-chip “hot spots,” with heat fluxes approaching — and at times exceeding — 1 kW/cm2. The cost-effective thermal management of such chips requires the introduction and refinement of novel cooling techniques. Mini-contact enhanced, miniaturized thermoelectric coolers (TECs) have been shown to be a viable approach for the remediation of on-chip hot spots, but their performance is constrained by the thermal resistance introduced by the attachment of this thermal management device. This paper uses a detailed finite-element package-level model to examine the parasitic effects of the thermal contact resistance (at the interfaces of the mini-contact and TEC) on the cooling efficacy of this thermal solution. Particular attention is devoted to the deleterious effect of contact resistance on the thermoelectric leg height and the mini-contact size required to achieve the greatest hot spot temperature reduction on the chip. Data from experiments with TECs (with a leg height of 130 μm) combined with several sizes of mini-contact pads, are used to validate the modeling approach and the overall conclusions.



Author(s):  
Peng Wang ◽  
Avram Bar-Cohen

Growing interest in germanium solid-state devices is raising concern over the effects of on-chip, micro-scaled, high flux hot spot on the reliability and performance of germanium chips. Current thermal management technology offers few choices for such on-chip hot spot remediation. However, the good thermo-electric properties of single crystal germanium support the development of a novel thermal management approach, relying on thermoelectric self-cooling by an electric current flowing in a thin planar layer on the back of the germanium chip. Use of metal-on-germanium fabrication techniques can yield a very low thermal contact resistance at the micro cooler/chip interface and the current flow can transfer the energy absorbed from a hot spot to the edge of the chip, thus substantially reducing the detrimental effect of thermoelectric heating on the temperature of the active circuitry. In this paper three-dimensional thermo-electric simulations are used to investigate the self-cooling of hot spots on a germanium chip for a wide range of input current, doping concentration, hot spot heat flux, micro cooler size, and germanium chip thickness. Results suggest that localized thermoelectric self-cooling on the germanium chip can significantly reduce the temperature rise resulting from micro-scaled high-flux hot spots.



Author(s):  
Peng Wang ◽  
Avram Bar-Cohen ◽  
Bao Yang ◽  
Gary L. Solbrekken ◽  
Yan Zhang ◽  
...  

Driven by shrinking feature sizes, microprocessor “hot-spots” — with their associated high heat flux and sharp temperature gradients — have emerged as the primary “driver” for on-chip thermal management of today’s IC technology. Solid state thermoelectric micro-coolers offer great promise for reducing the severity of on-chip “hot-spots”, but the theoretical cooling potential of these devices, fabricated on the back of the silicon die in an IC package, has yet to be determined. The results of a three-dimensional electro-thermal finite-element modeling study of such a micro-cooler are presented. Attention is focused on the hot-spot temperature reductions associated with variations in micro-cooler geometry, chip thickness, and chip doping concentration, along with the parasitic Joule heating effects from the electrical contact resistance and current flow through the silicon. The modeling results help to define the optimum solid-state cooling configuration and reveal that, for the conditions examined, nearly 80% of the hot-spot temperature rise of 2.5°C can be removed from a 70μm × 70μm, 680W/cm2 hot-spot on a 50μm thick silicon die with a single micro-cooler.



2012 ◽  
Vol 134 (5) ◽  
Author(s):  
Avram Bar-Cohen ◽  
Peng Wang

The rapid emergence of nanoelectronics, with the consequent rise in transistor density and switching speed, has led to a steep increase in microprocessor chip heat flux and growing concern over the emergence of on-chip hot spots. The application of on-chip high flux cooling techniques is today a primary driver for innovation in the electronics industry. In this paper, the physical phenomena underpinning the most promising on-chip thermal management approaches for hot spot remediation, along with basic modeling equations and typical results are described. Attention is devoted to thermoelectric micro-coolers and two-phase microgap coolers. The advantages and disadvantages of these on-chip cooling solutions for high heat flux hot spots are evaluated and compared.



2013 ◽  
Vol 455 ◽  
pp. 466-469
Author(s):  
Yun Chuan Wu ◽  
Shang Long Xu ◽  
Chao Wang

With the increase of performance demands, the nonuniformity of on-chip power dissipation becomes greater, causing localized high heat flux hot spots that can degrade the processor performance and reliability. In this paper, a three-dimensional model of the copper microchannel heat sink, with hot spot heating and background heating on the back, was developed and used for numerical simulation to predict the hot spot cooling performance. The hot spot is cooled by localized cross channels. The pressure drop, thermal resistance and effects of hot spot heat flux and fluid flow velocity on the cooling of on-chip hot spots, are investigated in detail.



Electronics ◽  
2020 ◽  
Vol 9 (2) ◽  
pp. 346 ◽  
Author(s):  
Lili Shen ◽  
Ning Wu ◽  
Gaizhen Yan

By using through-silicon-vias (TSV), three dimension integration technology can stack large memory on the top of cores as a last-level on-chip cache (LLC) to reduce off-chip memory access and enhance system performance. However, the integration of more on-chip caches increases chip power density, which might lead to temperature-related issues in power consumption, reliability, cooling cost, and performance. An effective thermal management scheme is required to ensure the performance and reliability of the system. In this study, a fuzzy-based thermal management scheme (FBTM) is proposed that simultaneously considers cores and stacked caches. The proposed method combines a dynamic cache reconfiguration scheme with a fuzzy-based control policy in a temperature-aware manner. The dynamic cache reconfiguration scheme determines the size of the cache for the processor core according to the application that reaches a substantial amount of power consumption savings. The fuzzy-based control policy is used to change the frequency level of the processor core based on dynamic cache reconfiguration, a process which can further improve the system performance. Experiments show that, compared with other thermal management schemes, the proposed FBTM can achieve, on average, 3 degrees of reduction in temperature and a 41% reduction of leakage energy.



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