scholarly journals Evolution of microstructure in flyash-containing porcelain body on heating at different temperatures

2004 ◽  
Vol 27 (2) ◽  
pp. 183-188 ◽  
Author(s):  
Kausik Dana ◽  
Swapan Kumar Das
Keyword(s):  
Porcelain Body ◽  
Different Temperatures ◽  
Evolution Of Microstructure

Annealing Effects of Schottky Contacts on the Characteristics of 4H-SiC Schottky Barrier Diodes

1999 ◽  
Vol 572 ◽  
Author(s):  
S. C. Kang ◽  
B. H. Kum ◽  
S. J. Do ◽  
J. H. Je ◽  
M. W. SHIN
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
X Ray ◽  
Annealing Temperatures ◽  
X Ray Scattering ◽  
Different Temperatures ◽  
Annealing Effects ◽  
Evolution Of Microstructure ◽  
The Relationship ◽  
Ray Scattering

ABSTRACTThis paper reports on the relationship between the microstructure and the device performance of Pt/4H-SiC schottky barrier diodes ( SBDs ). The evolution of microstructure in the metal/SiC interfaces annealed at different temperatures was characterized using X-ray scattering techniques. The reverse characteristics of the devices were degraded with annealing temperatures. The maximum breakdown voltages of as-deposited devices and 850 °C annealed devices are 1300 V and 626 V, respectively. However, the forward characteristics of the devices were found out to improve with annealing temperatures. X-ray scattering analysis showed that Pt-silicides were formed by annealing performed at or higher than 650 °C. The formation of silicides was shown to increase the roughness of the Pt/SiC interface. It is believed that the forward characteristics of the SBDs be strongly dependent on the crystallity of silicides formed in the Pt/SiC interface during the annealing process.

Utilization of Nanofibers in Sintered Ceramic Body Based on Calcium Aluminous Cement

2016 ◽  
Vol 865 ◽  
pp. 62-66
Author(s):  
Radomír Sokolař ◽  
Mikuláš Šveda
Keyword(s):  
Calcium Aluminate ◽  
Raw Materials ◽  
Ceramic Body ◽  
Drying Shrinkage ◽  
Porcelain Body ◽  
Calcium Aluminate Cement ◽  
Sintered Ceramic ◽  
Different Temperatures ◽  
Aluminous Cement ◽  
Aluminate Cement

The aim of the article is to determine the possibility of domestic inorganic nanofibers utilization (Pardam, Ltd.) for experimentally developed porcelain body based on calcium aluminate cement. Two types of nanofibers based on pure SiO2 and Al2O3 were mixed with the casting slip prepared in the system calcium aluminate cement – quartz – feldspar. The properties of the raw materials mixture (mixing water content, drying shrinkage, strength of green body) and fired body at different temperatures (strength, porosity) were tested.

TEM Studies on the Effect of Nature of Precipitates in Al-Li Alloy on Microstructural Evolution during Severe Plastic Deformation

2008 ◽  
Vol 584-586 ◽  
pp. 411-416 ◽  
Author(s):  
Sivaswamy Giribaskar ◽  
Gouthama ◽  
Rajesh Prasad
Keyword(s):  
Equal Channel Angular Extrusion ◽  
Applied Pressure ◽  
Second Phase ◽  
Fine Grained ◽  
Second Phase Particles ◽  
Formed Precipitate ◽  
Different Temperatures ◽  
Grain Fragmentation ◽  
Dynamic Recrystallisation ◽  
Evolution Of Microstructure

Equal channel angular extrusion (ECAE), involving intense plastic straining under high applied pressure is generally recognized and extensively studied top down approach for producing bulk ultra-fine grained (UFG) metallic materials, and even going down in size to the nanometer range. In this research efforts are made to identify conditional under which grains with size less than 100 nm form after ECAE. Evolution of microstructure of Al-Li based alloy processed by ECAE is analyzed using transmission electron microscopy (TEM). Observations on the effect of precipitates/second phase particles in the sample on the deformation characteristics and their role on the increased degree of grain fragmentation process is highlighted. Samples of Al-Li based alloy are solutionized, quenched and aged at different temperatures to obtain well formed precipitate laths/plates before subjecting to ECAE. During the deformation process these precipitates disintegrate into fragments and get dispersed into the Al matrix. The fragments of a few nanometers size bring about drastic changes in the flow as well as the recovery characteristics of processed samples. Evidence for dynamic recrystallisation taking place during the ECAE processing is presented. It was observed that optimal thermal treatment leads to more effective grain refinement and consequently an ultra-fine grained microstructure could be achieved even after single pass in Al-Li based alloy containing precipitates and second phase particles.

scholarly journals Evolution of the Mobility Gap with Thickness in Hydrogen-Diluted Intrinsic Si:H Materials in the Phase Transition Region and Its Effect on p-i-n Solar Cell Characteristics

2001 ◽  
Vol 664 ◽  
Author(s):  
R.J. Koval ◽  
J.M. Pearce ◽  
A.S. Ferlauto ◽  
R.W. Collins ◽  
C.R. Wronski
Keyword(s):  
Solar Cell ◽  
Layer Transition ◽  
Hydrogenated Silicon ◽  
Hydrogen Dilution ◽  
Cell Structures ◽  
Different Temperatures ◽  
Phase Transition Region ◽  
Different Depths ◽  
Evolution Of Microstructure ◽  
Mobility Gap

ABSTRACTInsights into the growth processes and evolution of microstructure in intrinsic hydrogenated silicon (Si:H) films obtained from real-time spectroscopic ellipsometry (RTSE) are extended to the characterization of the optoelectronic properties of the corresponding solar cells. To assess the effects of transition regions from the amorphous to mixed microcrystalline phases, cell structures with and without such regions at different depths in the i-layer from the p-contact have been investigated. Experimental results are presented that clearly demonstrate changes in the mobility gap, Eµ, of the materials as their microstructure evolves with thickness, further supporting the important effect of the hydrogen dilution ratio R (R[H2]/[SiH4]) on the transition between the amorphous and microcrystalline phases. Light J-V characteristics at room temperature and dark J-V characteristics at different temperatures were measured on p(a-SiC:H:B)-i(Si:H)-n(µc-Si:H:P) solar cell structures with i-layers of different thicknesses and R values. The mobility gaps of both the amorphous and microcrystalline intrinsic-layer materials as well as those of the transition layers are obtained from dark J(V,T) measurements. Using numerical simulation, both the light and the dark J-V characteristics are self-consistently modeled assuming sharp changes in the mobility gaps at the intrinsic layer transition thicknesses determined by RTSE.

Instrumentation For Quantitative Microscopy

1977 ◽  
Vol 35 ◽  
pp. 206-209
Author(s):  
B. Ralph ◽  
A.R. Jones
Keyword(s):  
Volume Fraction ◽  
Three Dimensional ◽  
Two Dimensional ◽  
Automatic Data ◽  
Phase Volume Fraction ◽  
Statistical Confidence ◽  
Resultant Data ◽  
Automatic Data Collection ◽  
Third Dimension ◽  
Evolution Of Microstructure

In all fields of microscopy there is an increasing interest in the quantification of microstructure. This interest may stem from a desire to establish quality control parameters or may have a more fundamental requirement involving the derivation of parameters which partially or completely define the three dimensional nature of the microstructure. This latter categorey of study may arise from an interest in the evolution of microstructure or from a desire to generate detailed property/microstructure relationships. In the more fundamental studies some convolution of two-dimensional data into the third dimension (stereological analysis) will be necessary.In some cases the two-dimensional data may be acquired relatively easily without recourse to automatic data collection and further, it may prove possible to perform the data reduction and analysis relatively easily. In such cases the only recourse to machines may well be in establishing the statistical confidence of the resultant data. Such relatively straightforward studies tend to result from acquiring data on the whole assemblage of features making up the microstructure. In this field data mode, when parameters such as phase volume fraction, mean size etc. are sought, the main case for resorting to automation is in order to perform repetitive analyses since each analysis is relatively easily performed.

Observations oh Nucleation and Growth of Voids in Nickel

1970 ◽  
Vol 28 ◽  
pp. 414-415
Author(s):  
J. L. Brimhall ◽  
H. E. Kissinger ◽  
B. Mastel
Keyword(s):  
High Purity ◽  
Growth Stage ◽  
Elevated Temperatures ◽  
Early Growth ◽  
Nucleation And Growth ◽  
Pure Nickel ◽  
Different Temperatures ◽  
Total Fluence ◽  
Neutron Exposure ◽  
Growth Of Voids

Some information on the size and density of voids that develop in several high purity metals and alloys during irradiation with neutrons at elevated temperatures has been reported as a function of irradiation parameters. An area of particular interest is the nucleation and early growth stage of voids. It is the purpose of this paper to describe the microstructure in high purity nickel after irradiation to a very low but constant neutron exposure at three different temperatures.Annealed specimens of 99-997% pure nickel in the form of foils 75μ thick were irradiated in a capsule to a total fluence of 2.2 × 1019 n/cm2 (E > 1.0 MeV). The capsule consisted of three temperature zones maintained by heaters and monitored by thermocouples at 350, 400, and 450°C, respectively. The temperature was automatically dropped to 60°C while the reactor was down.

The structure of membranes and membrane proteins embedded in amorphous ice

1992 ◽  
Vol 50 (1) ◽  
pp. 432-433
Author(s):  
Uwe Lücken ◽  
Joachim Jäger
Keyword(s):  
Phase Transition ◽  
Transition Temperature ◽  
Membrane Proteins ◽  
Phase Transition Temperature ◽  
Lipid Vesicles ◽  
Freezing Stress ◽  
Amorphous Ice ◽  
Different Temperatures ◽  
Band Pass ◽  
Lipid Polymorphism

TEM imaging of frozen-hydrated lipid vesicles has been done by several groups Thermotrophic and lyotrophic polymorphism has been reported. By using image processing, computer simulation and tilt experiments, we tried to learn about the influence of freezing-stress and defocus artifacts on the lipid polymorphism and fine structure of the bilayer profile. We show integrated membrane proteins do modulate the bilayer structure and the morphology of the vesicles.Phase transitions of DMPC vesicles were visualized after freezing under equilibrium conditions at different temperatures in a controlled-environment vitrification system. Below the main phase transition temperature of 24°C (Fig. 1), vesicles show a facetted appearance due to the quasicrystalline areas. A gradual increase in temperature leads to melting processes with different morphology in the bilayer profile. Far above the phase transition temperature the bilayer profile is still present. In the band-pass-filtered images (Fig. 2) no significant change in the width of the bilayer profile is visible.

Microstructure of sputter deposited Ni-Sb ohmic contacts on GaAs

1989 ◽  
Vol 47 ◽  
pp. 450-451
Author(s):  
S. Yegnasubramanian ◽  
V.C. Kannan ◽  
R. Dutto ◽  
P.J. Sakach
Keyword(s):  
High Performance ◽  
Ohmic Contacts ◽  
Surface Defects ◽  
Pure Metal ◽  
Device Fabrication ◽  
Native Oxide ◽  
Metal Thin Films ◽  
Recent Developments ◽  
Different Temperatures ◽  
Sputter Deposited

Recent developments in the fabrication of high performance GaAs devices impose crucial requirements of low resistance ohmic contacts with excellent contact properties such as, thermal stability, contact resistivity, contact depth, Schottky barrier height etc. The nature of the interface plays an important role in the stability of the contacts due to problems associated with interdiffusion and compound formation at the interface during device fabrication. Contacts of pure metal thin films on GaAs are not desirable due to the presence of the native oxide and surface defects at the interface. Nickel has been used as a contact metal on GaAs and has been found to be reactive at low temperatures. Formation Of Ni2 GaAs at 200 - 350C is reported and is found to grow epitaxially on (001) and on (111) GaAs, but is shown to be unstable at 450C. This paper reports the investigations carried out to understand the microstructure, nature of the interface and composition of sputter deposited and annealed (at different temperatures) Ni-Sb ohmic contacts on GaAs by TEM. Attempts were made to correlate the electrical properties of the films such as the sheet resistance and contact resistance, with the microstructure. The observations are corroborated by Scanning Auger Microprobe (SAM) investigations.

Comparative Labelling and Biokinetic Studies of 99mTc-EDTA(Sn) and 99mTc-DTPA(Sn)

1977 ◽  
Vol 16 (01) ◽  
pp. 30-35 ◽  
Author(s):  
N. Agha ◽  
R. B. R. Persson
Keyword(s):  
Complex Formation ◽  
Significant Influence ◽  
Room Temperature ◽  
Ph Value ◽  
Maximum Activity ◽  
Reduction Step ◽  
Labelling Yield ◽  
Different Temperatures ◽  
Kinetics Of

SummaryGelchromatography column scanning has been used to study the fractions of 99mTc-pertechnetate, 99mTcchelate and reduced hydrolyzed 99mTc in preparations of 99mTc-EDTA(Sn) and 99mTc-DTPA(Sn). The labelling yield of 99mTc-EDTA(Sn) chelate was as high as 90—95% when 100 μmol EDTA · H4 and 0.5 (Amol SnCl2 was incubated with 10 ml 99mTceluate for 30—60 min at room temperature. The study of the influence of the pH-value on the fraction of 99mTc-EDTA shows that pH 2.8—2.9 gave the best labelling yield. In a comparative study of the labelling kinetics of 99mTc-EDTA(Sn) and 99mTc- DTPA(Sn) at different temperatures (7, 22 and 37°C), no significant influence on the reduction step was found. The rate constant for complex formation, however, increased more rapidly with increased temperature for 99mTc-DTPA(Sn). At room temperature only a few minutes was required to achieve a high labelling yield with 99mTc-DTPA(Sn) whereas about 60 min was required for 99mTc-EDTA(Sn). Comparative biokinetic studies in rabbits showed that the maximum activity in kidneys is achieved after 12 min with 99mTc-EDTA(Sn) but already after 6 min with 99mTc-DTPA(Sn). The long-term disappearance of 99mTc-DTPA(Sn) from the kidneys is about five times faster than that for 99mTc-EDTA(Sn).

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