Improved hole injection/extraction using PEDOT:PSS interlayer coated onto high temperature annealed ITO electrode for efficient device performances

Gold nanoparticles (Au NPs) with mean size of 1 nm were placed on an indium tin oxide (ITO) electrode by ark plasma gun. The hole injection at ITO/organic semiconductor was significantly enhanced by the NPs. Though the hole current was unstable upon the voltage scan, it can be substantially stabilized by the insertion of hyper-branched polystyrene (HPS) thin layer between ITO and Au NPs. The work function of ITO electrode was also increased by NPs. The ITO/HPS/Au NPs structure was applied to the anode of an organic solar cell (OSC) with a bulk heterojunction active layer. The power conversion efficiency was significantly higher than that of OSC without anode buffer layer and almost comparable to that with a representative buffer material.

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Near Interface Oxide Degradation in High Temperature Annealed Si/SiO2/Si Structures

MRS Proceedings ◽

10.1557/proc-318-623 ◽

1993 ◽

Vol 318 ◽

Author(s):

R. A. B. Devine ◽

D. Mathiot ◽

W. L. Warren ◽

D. M. Fleetwoodi

Keyword(s):

High Temperature ◽

Oxygen Vacancies ◽

Solubility Limit ◽

Hole Injection ◽

Oxide Degradation ◽

Large Numbers ◽

Spin Resonance ◽

Infra Red ◽

X Irradiation ◽

Anneal Temperature

ABSTRACTDegradation of 430 nra thick SiO2 layers in Si/SiO2/Si structures which results from high temperature annealing (1320°C) has been studied using electron spin resonance, infra-red absorption spectroscopy and refractive index measurements. Large numbers of oxygen-vacancies are found in a region ≤ 100 nm from each Si/SiO2 interface. Two types of paramagnetic defects are observed following γ or X-irradiation or hole injection. The 1106 cm−l infra-red absorption associated with O interstitials in the Si substrate is found to increase with annealing time. The infra-red and spin resonance observations can be explained qualitatively and quantitatively in terms of a model in which oxygen atoms are gettered from the oxide into the under or overlying Si, the driving force being the increased O solubility limit associated with the anneal temperature.

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Uniform hole injection resulting in low operating current and stable high temperature cw operation in 630 nm band AlGaInP multi-quantum well laser

Proceedings of IEEE 14th International Semiconductor Laser Conference ISLC-94 ◽

10.1109/islc.1994.519335 ◽

2002 ◽

Cited By ~ 3

Author(s):

H. Hotta ◽

F. Miyasaka ◽

K. Tada ◽

K. Kobayashi

Keyword(s):

High Temperature ◽

Quantum Well ◽

Hole Injection ◽

Quantum Well Laser ◽

Cw Operation ◽

Operating Current ◽

Multi Quantum Well

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Improved hole injection/extraction using PEDOT:PSS interlayer coated onto high temperature annealed ITO electrode for efficient device performances

10.21203/rs.3.rs-298362/v1 ◽

2021 ◽

Author(s):

Gnyaneshwar Dasi ◽

Thyda Lavanya ◽

Govindasamy Sathiyan ◽

Raju Kumar Gupta ◽

Ashish Garg ◽

...

Keyword(s):

High Temperature ◽

Indium Tin Oxide ◽

Extraction Process ◽

Hole Injection ◽

Device Structure ◽

Ito Film ◽

Hole Transporting ◽

Ito Thin Films ◽

Poly Styrene Sulfonate ◽

Normal Ambient

Abstract We demonstrate the improved device performances by using the structure of poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) film coated onto the indium tin oxide (ITO) anodic electrode annealed at 400 °C under the normal ambient. The ITO thin films show the improved film quality with decreased dislocation density and lattice strain as annealing temperature increases. The spin-coated PEDOT:PSS film smoothens the wrinkle kind of surface morphology of the ITO film annealed at 400 °C. The annealed ITO (400 °C) with PEDOT:PSS interlayer improves the hole-current density in the hole-only devices (HODs) having the device structure of ITO/PEDOT:PSS/N,N'-Bis(3-methylphenyl)-N,N'-diphenylbenzidine as hole-transporting layer/Al. It enhances the efficiency of organic photovoltaic devices [ITO (annealed) /PEDOT:PSS/P3HT:PCBM (active layer)/LiF/Al] by three times higher (1.69 %) when compared to that (0.48 %) of pristine ITO based OPV device. These results show that the annealing of ITO film at the high temperature of 400 °C under the normal ambient improves the film quality and lowers the potential energy barrier at ITO/PEDOT:PSS interface for effective hole injection/extraction process, resulting in the enhanced device electrical performances.

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Influence of Thermo-Mechanical Processing on the Microstructure of Beryllia Dispersed Nickel Alloys

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100071363 ◽

1973 ◽

Vol 31 ◽

pp. 184-185

Author(s):

M.S. Grewal ◽

S.A. Sastri ◽

N.J. Grant

Keyword(s):

High Temperature ◽

Nickel Alloys ◽

Thermomechanical Processing ◽

Cold Work ◽

High Temperature Strength ◽

Strengthening Effect ◽

Mechanical Processing ◽

Uniform Dispersion ◽

Oxide Particles ◽

Nickel Base

Currently there is a great interest in developing nickel base alloys with fine and uniform dispersion of stable oxide particles, for high temperature applications. It is well known that the high temperature strength and stability of an oxide dispersed alloy can be greatly improved by appropriate thermomechanical processing, but the mechanism of this strengthening effect is not well understood. This investigation was undertaken to study the dislocation substructures formed in beryllia dispersed nickel alloys as a function of cold work both with and without intermediate anneals. Two alloys, one Ni-lv/oBeo and other Ni-4.5Mo-30Co-2v/oBeo were investigated. The influence of the substructures produced by Thermo-Mechanical Processing (TMP) on the high temperature creep properties of these alloys was also evaluated.

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Application of TEM to Deformation, Wear, and Fracture of Ceramics

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100052377 ◽

1974 ◽

Vol 32 ◽

pp. 472-473

Author(s):

B. J. Hockey

Keyword(s):

Wear Resistance ◽

High Temperature ◽

Mechanical Behavior ◽

Brittle Materials ◽

High Temperature Strength ◽

Wide Range ◽

Corrosive Environments ◽

Further Development

Ceramics, such as Al2O3 and SiC have numerous current and potential uses in applications where high temperature strength, hardness, and wear resistance are required often in corrosive environments. These materials are, however, highly anisotropic and brittle, so that their mechanical behavior is often unpredictable. The further development of these materials will require a better understanding of the basic mechanisms controlling deformation, wear, and fracture.The purpose of this talk is to describe applications of TEM to the study of the deformation, wear, and fracture of Al2O3. Similar studies are currently being conducted on SiC and the techniques involved should be applicable to a wide range of hard, brittle materials.

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Lattice Imaging of Grain Boundaries in Ceramics

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100078171 ◽

1977 ◽

Vol 35 ◽

pp. 114-115

Author(s):

D. R. Clarke ◽

G. Thomas

Keyword(s):

Mechanical Properties ◽

High Temperature ◽

Silicon Nitride ◽

Grain Boundaries ◽

High Temperature Strength ◽

Current Interest ◽

Lattice Imaging ◽

Special Significance ◽

Structural Applications ◽

Refractory Ceramics

Grain boundaries have long held a special significance to ceramicists. In part, this has been because it has been impossible until now to actually observe the boundaries themselves. Just as important, however, is the fact that the grain boundaries and their environs have a determing influence on both the mechanisms by which powder compaction occurs during fabrication, and on the overall mechanical properties of the material. One area where the grain boundary plays a particularly important role is in the high temperature strength of hot-pressed ceramics. This is a subject of current interest as extensive efforts are being made to develop ceramics, such as silicon nitride alloys, for high temperature structural applications. In this presentation we describe how the techniques of lattice fringe imaging have made it possible to study the grain boundaries in a number of refractory ceramics, and illustrate some of the findings.

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Effect of Improved ThO2 Particle Dispersion in Nickel on High-Temperature Strength

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100069211 ◽

1970 ◽

Vol 28 ◽

pp. 444-445

Author(s):

E. R. Kimmel ◽

H. L. Anthony ◽

W. Scheithauer

Keyword(s):

High Temperature ◽

Metal Matrix ◽

Oxide Particle ◽

Oxide Phase ◽

Dislocation Motion ◽

Particle Dispersion ◽

High Temperature Strength ◽

Strengthening Effect ◽

Oxide Particles ◽

The Stability

The strengthening effect at high temperature produced by a dispersed oxide phase in a metal matrix is seemingly dependent on at least two major contributors: oxide particle size and spatial distribution, and stability of the worked microstructure. These two are strongly interrelated. The stability of the microstructure is produced by polygonization of the worked structure forming low angle cell boundaries which become anchored by the dispersed oxide particles. The effect of the particles on strength is therefore twofold, in that they stabilize the worked microstructure and also hinder dislocation motion during loading.

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