Electron beam resist systems: A critical review of recent developments

1983 ◽  
Vol 41 ◽  
pp. 82-85
Author(s):  
M.P.C. Watts
Keyword(s):  
Confidence Limit ◽  
Semiconductor Industry ◽  
Critical Dimension ◽  
Optical Lithography ◽  
Direct Write ◽  
Beam Size ◽  
Resolution Limit ◽  
Recent Developments ◽  
Dry Etch ◽  
Process Compatibility

The aim of this paper is to critically review the latest commercial and scientific resist developments in the light of the needs of the semiconductor industry in direct write applications. These needs can be expressed as a set of usable ranges for sensitivity, resolution, and process compatibility, most notably dry etch resistance. The resist sensitivity needed for tolerable throughput varies from 0.5uCoul/cm2 to 20 uCoul/cm2 depending on the machine being used. Submicron resolution is now a necessity (0.1-1.0 um) because circuits with 1-2 um features are being made using optical lithography.The resolution limit of a resist is difficult to measure because resolution depends critically on the “image quality” (beam size/shape). Furthermore, for a given critical dimension to be used in a VLSI Si process, that dimension must be reproducible to within tight statistical limits, eg., for Hewlett-Packard's NMOS process the requirement is 1.5um lines, 1um spaces with a 3σ of +/− 0.25um (99.9% confidence limit). With these caveats, SEM's of resolution test paterns can be used as a guide to working resolution.

scholarly journals Strained Silicon Layer in CMOS Technology

2014 ◽  
Vol 18 (2) ◽  
pp. 63 ◽  
Author(s):  
Tatjana Pešić-Brđanin ◽  
Branko L. Dokić
Keyword(s):  
Semiconductor Industry ◽  
High Vacuum ◽  
High Mobility ◽  
Silicon Layer ◽  
Cmos Technology ◽  
Ultra High Vacuum ◽  
Strained Layers ◽  
Mobility Of Charge Carriers ◽  
Recent Developments ◽  
Silicon And Germanium

Semiconductor industry is currently facing with thefact that conventional submicron CMOS technology isapproaching the end of their capabilities, at least when it comes toscaling the dimensions of the components. Therefore, muchattention is paid to device technology that use new technologicalstructures and new channel materials. Modern technologicalprocesses, which mainly include ultra high vacuum chemicalvapor deposition, molecular beam epitaxy and metal-organicmolecular vapor deposition, enable the obtaining of ultrathin,crystallographically almost perfect, strained layers of high purity.In this review paper we analyze the role that such layers have inmodern CMOS technologies. It’s given an overview of thecharacteristics of both strain techniques, global and local, withspecial emphasis on performance of NMOS biaxial strain andPMOS uniaxial strain. Due to the improved transport propertiesof strained layers, especially high mobility of charge carriers, theemphasis is on mechanisms to increase the charge mobility ofstrained silicon and germanium, in light of recent developments inCMOS technology.

scholarly journals X-ray Metrology for the SemiconductorIndustry Tutorial

2019 ◽  
Vol 124 ◽  
Author(s):  
Daniel F. Sunday ◽  
Wen-li Wu ◽  
Scott Barton ◽  
R. Joseph Kline
Keyword(s):  
Data Processing ◽  
Small Angle ◽  
Semiconductor Industry ◽  
Critical Dimension ◽  
Next Generation ◽  
Dimensional Metrology ◽  
X Ray ◽  
X Ray Scattering ◽  
Short Course ◽  
Ray Scattering

The semiconductor industry is in need of new, in-line dimensional metrology methods with higherspatial resolution for characterizing their next generation nanodevices. The purpose of this short course is to train the semiconductor industry on the NIST-developed critical dimension small angle X-ray scattering (CDSAXS) method. The topics will include both data processing and instrumentation. The short course will also provide an opportunity for discussion of the requirements for CDSAXS and the necessary improvements in X-ray source technology. Expected audience include semiconductor manufacturers, equipment manufacturers, and component manufacturers. The presentations were made at “X-ray Metrology for the Semiconductor Industry” short course at the National Institute of Standards and Technology on Aug. 25, 2016.

scholarly journals Writing 3D Nanomagnets Using Focused Electron Beams

Materials ◽  
2020 ◽  
Vol 13 (17) ◽  
pp. 3774 ◽  
Author(s):  
Amalio Fernández-Pacheco ◽  
Luka Skoric ◽  
José María De Teresa ◽  
Javier Pablo-Navarro ◽  
Michael Huth ◽  
...  
Keyword(s):  
Three Dimensional ◽  
Magnetic Nanostructures ◽  
Direct Write ◽  
Recent Developments ◽  
Magnetic Length ◽  
Substantial Progress ◽  
Wide Perspective ◽  
Nanofabrication Technique ◽  
New Phenomena ◽  
Selection Of

Focused electron beam induced deposition (FEBID) is a direct-write nanofabrication technique able to pattern three-dimensional magnetic nanostructures at resolutions comparable to the characteristic magnetic length scales. FEBID is thus a powerful tool for 3D nanomagnetism which enables unique fundamental studies involving complex 3D geometries, as well as nano-prototyping and specialized applications compatible with low throughputs. In this focused review, we discuss recent developments of this technique for applications in 3D nanomagnetism, namely the substantial progress on FEBID computational methods, and new routes followed to tune the magnetic properties of ferromagnetic FEBID materials. We also review a selection of recent works involving FEBID 3D nanostructures in areas such as scanning probe microscopy sensing, magnetic frustration phenomena, curvilinear magnetism, magnonics and fluxonics, offering a wide perspective of the important role FEBID is likely to have in the coming years in the study of new phenomena involving 3D magnetic nanostructures.

Evaluation of CD Fluctuation on QC Monitor

2012 ◽  
Vol 195 ◽  
pp. 86-89
Author(s):  
Chuan Yu Yen ◽  
Mu Chien Luo ◽  
Kuo Bin Huang ◽  
Ting Chun Wang
Keyword(s):  
Critical Dimension ◽  
Device Performance ◽  
Material Loss ◽  
Additional Tool ◽  
Dry Etch ◽  
Fine Tune

The continually increasing complexity of IC integration drives the reduction of device dimensions. Because of this, material loss that alters the device critical dimension (CD) continues to be an important parameter to monitor for device performance. The processes used in advanced device generations therefore need to be well defined to maintain the correct CD. The basic processes used to define the profile were (i) photolithography for device patterning, (ii) dry etch and ash to form the profile and (iii) caros clean for photoresist strip [1]. The lithography and etch tools were critical to fine tune the CDs for each device generation. The accuracy of the CD monitor was very important for tool tuning and optimization. However the basic QC monitor results showed the CD data was more unstable on the patterned monitor wafer requiring additional tool tuning that was not required on the device wafer.

Nanopatterning with UV Optical Lithography

MRS Bulletin ◽  
2005 ◽  
Vol 30 (12) ◽  
pp. 942-946 ◽  
Author(s):  
M. Rothschild ◽  
T. M. Bloomstein ◽  
N. Efremow ◽  
T. H. Fedynyshyn ◽  
M. Fritze ◽  
...  
Keyword(s):  
Self Assembly ◽  
State Of The Art ◽  
Uv Light ◽  
Semiconductor Industry ◽  
Optical Lithography ◽  
Large Area ◽  
Standard Process ◽  
Common Thread ◽  
Semiconductor Electronics ◽  
193 Nm

AbstractOptical lithography at ultraviolet (UV) wavelengths is the standard process for patterning 90-nm state-of-the-art devices in the semiconductor industry, and extensions to 45 nm and below are currently being explored. With such high resolution, the inherent high throughput of optical lithography will enable the development of a broad range of applications beyond semiconductor electronics. In this article, we will review progress toward nanopatterning with UV light in a variety of materials and geometries.The common thread is the use of short wavelengths, 193 nm or 157 nm, coupled with immersion to further reduce the effective wavelength. Densely spaced, 32-nm (and even smaller) features have been patterned, facilitating the future preparation of large-area, deeply scaled microelectronics, nanophotonics, nanobiology, and molecular-scale self-assembly.

Re-Evaluation of Calibration and Measurement Capabilities of Pitch Calibration Systems Designed by Using the Diffraction Method

2017 ◽  
Vol 11 (5) ◽  
pp. 691-698
Author(s):  
Ichiko Misumi ◽  
Jun-ichiro Kitta ◽  
Ryosuke Kizu ◽  
Akiko Hirai ◽  
◽  
...  
Keyword(s):  
Semiconductor Industry ◽  
Diffraction Method ◽  
Reference Value ◽  
Critical Dimension ◽  
National Metrology Institute ◽  
Calibration Laboratory ◽  
Long Term Stability ◽  
Calibration And Measurement Capabilities ◽  
Electron Microscopes ◽  
Measurement Capabilities

One-dimensional grating is one of the most important standards that are used to calibrate magnification of critical-dimension scanning electron microscopes (CD-SEMs) in the semiconductor industry. Long-term stability of pitch calibration systems is required for the competence of testing and calibration laboratories determined in ISO/IEC 17025:2005. In this study, calibration and measurement capabilities of two types of pitch calibration systems owned by a calibration laboratory are re-evaluated through comparison to a reference value and its expanded uncertainty given by a metrological atomic force microscope (metrological AFM) at National Metrology Institute of Japan (NMIJ), AIST. The calibration laboratory’s pitch calibration systems are designed by using the diffraction method (optical and X-ray).

Addressing Flux Dip Challenges for 3-D Integrated Large Die, Ultrafine Pitch Interconnect

2017 ◽  
Vol 14 (1) ◽  
pp. 32-38
Author(s):  
C. Marsan-Loyer ◽  
D. Danovitch ◽  
N. Boyer
Keyword(s):  
Integrated Circuits ◽  
Semiconductor Industry ◽  
Chemical Characterization ◽  
Dip Coating ◽  
Production Type ◽  
Fine Pitch ◽  
Technical Issues ◽  
Cost Penalty ◽  
Physical And Chemical ◽  
Process Compatibility

The requirement for closely coupled, highly integrated circuits in the semiconductor industry has spawned alternative packaging innovations such as 2.5-D/3-D integration. The incredible potential of this alternative comes with great challenges, not the least of which is the unprecedented reduction in package interconnection pitch. Market acceptance of new fine-pitch microelectronic products is strongly dependent on the development of flawless assembly processes that align with the traditional Moore-like expectation of higher performance without cost penalty. One such process is the application of flux to the interconnect surfaces to achieve effective joining. Insufficient flux quantity or flux activity can impede the formation of solid, reliable joints, whereas excessive quantities or activity can cause solder bridging or difficulties with downstream operations such as residue cleaning or underfill reinforcement. This delicate balance, already complex for traditional chip joining, is further challenged by the geometrical and spatial reductions imposed by pitch miniaturization, especially where large die, with over 100,000 interconnects, are concerned. This article presents an overall development protocol to evolving a flux dipping operation to production-level thermocompression assembly of large die (8 × 11 × 0.780 mm) with 11,343 ultrafine pitch (62 μm) copper pillar interconnections. After reviewing the state of the art for fluxing technology and detailing the specific technical issues, we present and defend the chosen flux application approach with its corresponding parameters of interest. Physical and chemical characterization results for selected flux material candidates are reported in conjunction with an analysis of how their properties correlate to the flux dip application parameters. As part of this fundamental understanding, we investigate and report on flux dip coating behavior and how it compares to other industrial dip coating applications. Finally, the results of process assembly experiments in a production-type environment are reviewed and discussed with respect to the previous characterizations. These experiments span downstream assembly process compatibility (i.e., cleaning and underfill) as well as product reliability.

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